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研究業績 |
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Publication
** 2004 **
- H. Hasegawa, S. Kasai and T. Sato: "Hexagonal binary decision diagram quantum circuit approach for ultra-low power III-V quantum LSIs", IEICE Transactions on Electronics vol. E87C: 1757-1768 (2004) (invited paper)
- J. Kotani, H. Hasegawa and T. Hashizume: "Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model", Applied Surface Science vol. 237, no.1-4: 213-218 (2004)
- K. Iizuka, A. M. Bin Hashim and H. Hasegawa: "Surface plasma wave interactions between semiconductor and electromagnetic space harmonics from microwave to THz range", Thin Solid Films vol. 464-65: 464-468 (2004)
- J. Kotani, T. Hashizume and H. Hasegawa: "Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model", Journal of Vacuum Science & Technology B vol. 22: 2179-2189 (2004)
- T. Sato, I. Tamai and H. Hasegawa: "Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates", Journal of Vacuum Science & Technology, vol.22: 2266-2274 (2004)
- T. Sato, I. Tamai, S. Yoshida and H. Hasegawa: "Evolution mechanism of heterointerface cross-section during growth of GaAs ridge quantum wires by selective molecular beam epitaxy", Applied Surface Science, vol. 234: 11-15 (2004)
- T. Hashizume and H. Hasegawa: "Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes", Applied Surface Science, vol.234: 387-394 (2004)
- T. Hashizume, J. Kotani and H. Hasegawa: "Leakage mechanism in GaN and AlGaN schottky interfaces", Applied Physics Letters 84 (24): 4884-4886 (2004).
- S. Yoshida, I. Tamai, T. Sato and H. Hasegawa: "Selective molecular beam epitaxy growth of GaAs hexagonal nanowire networks on (111)B patterned substrates", Japanese Journal of Applied Physics Part 1 vol. 43 (4B): 2064-2068 (2004)
- A. M. Hashim, T. Hashizume, K. Iizuka and H. Hasegawa, "Plasma wave interactions in the microwave to THz range between carriers in a semiconductor 2DEG and interdigital slow waves", Superlattices and Microstructures vol. 34(3-6): 531-537 SEP-DEC (2004)
- M. Yumoto, T. Tamura, T. Sato and H. Hasegawa, "Fabrication of BDD quantum node switches on embedded GaAs quantum wires grown by selective MBE", Superlattices and Microstructures vol. 34(3-6): 485-491 (2004).
- H. Hasegawa, T. Inagaki, S. Ootomo and T. Hashizume, "Properties of electronic states at free surfaces and Schottky barrier interfaces of AlGaN/GaN heterostructure", IOP Conference Series 174: 299-302 (2004)
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- T. Sato, I. Tamai and H. Hasegawa, "Selective MBE growth of GaAs ridge quantum wire arrays on patterned (001) substrates and its growth mechanism", IOP Conference Series 174: 145-148 (2004).
- I. Tamai, T. Sato and H. Hasegawa: "Formation of high-density GaAs hexagonal nano-wire networks by selective MBE growth on pre-patterned (001) substrates", Physica E vol. 21: 521-526 (2004)
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