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研究業績 |
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Publication
** 2000 **
- T. Muranaka, H. Fujikura and H. Hasegawa, "Selective MBE Growth of InGaAs Quantum Wire-Dot Coupled Structures with Controlled Double-Barrier Potential Profiles", Inst. Phys. Conf. Ser., Vol.166, pp. 187-190, (2000)
- S. Kasai, Y. Satoh and H. Hasegawa, "GaAs Quantum Wire Transistors and Single Electron Transistors using Schottky Wrap Gates for Quantum Integrated Circuits", Inst. Phys. Conf. Ser., Vol.166, pp. 219-222, (2000)
- S. Kasai, H. Hasegawa, "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots", Japanese Journal of Applied Physics, Vol.40, pp. -, (2000)
- S. Ootomo, T. Hashizume and H. Hasegawa, "Nitridation of GaP (100) Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma", Japanese Journal of Applied Physics Part 1, Vol.39, pp. 2407-2413, (2000)
- B. Adamowicz, M. Miczek and H. Hasegawa, "COMPUTER ANALYSIS OF THE FERMI LEVEL BEHAVIOR AT SiO2/n-GaAs INTERFACES", Electron Technology, Vol.33, pp. 249-252, (2000)
- Ryuusuke Nakasaki, T. Hashizume and Hideki Hasegawa, "Insulator-GaN Interface Structures Formed by Plasma-Assisted Chemical Vapor Deposition", Physica E, Vol.7, pp. 953-957, (2000)
- H. Hasegawa "MBE growth and applications of silicon interface control layers", Thin Solid Films, Vol.367, pp. 58-67, (2000)
- B. Adamowicz, and H. Hasegawa, "Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers", Thin Solid Films, Vol.367, pp. 180-183, (2000)
- B. Adamowicz, and H. Hasegawa, "Computer analysis of photon-induced non-equilibrium phenomena at Si and AlGaAs surfaces", Vacuum, Vol.57, pp. 111-120, (2000)
- Hajime Fujikura, Tsutomu Muranaka and Hideki Hasegawa, "Formation of Device-Oriented InGaAs Coupled Quantum Structures by Selective MBE Growth on Patterned InP Substrates", Physica E, Vol.7, pp. 864-869, (2000)
- C. Jiang, H. Fujikura and H. Hasegawa, "Vertical Barrier Layer Formation during Selective MBE Growth of InGaAs Ridge Quantum Wires on InP Patterned Substrates", Physica E, Vol.7, pp. 902-906, (2000)
- T. Shiozawa, T. Yoshida, T. Hashizume and H. Hasegawa, "Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces", Applied Surface Science, Vol.159-160, pp. 98-103, (2000)
- H. Hasegawa "Advanced mesoscopic device concepts and technology", Microelectronic Engineering, Vol.53, pp. 29-36, (2000)
- Sanguan Anantathanasarn, Shin-ya Ootomo, Tamotsu Hashizume and H. Hasegawa, "Surface Passivation of GaAs by Ultra-thin Cubic GaN Layer", Applied Surface Science, Vol.159-160, pp. 456-461, (2000)
- Noboru Negoro, Hajime Fujikura and H. Hasegawa, "Scanning Tunneling Microscopy and Spectroscopy Study of Ultrathin Si Interface Control Layers Grown on (001) GaAs for Surface Passivation", Applied Surface Science, Vol.159-160, pp. 292-300, (2000)
- Taketomo Sato, Seiya Kasai, Hiroshi Okada and Hideki Hasegawa, "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in situ Electrochemical Process", Japanese Journal of Applied Physics Part 1, Vol.39, pp. 4609-4615, (2000)
- H. Hasegawa, N. Negoro, S. Kasai, Y. Ishikawa and H. Fujikura, "Effects of gap states on scanning tunneling spectra observed on (110)- and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy", Journal of Vacuum Science and Technology B, Vol.18, pp. 2100-2108, (2000)
- Hajime Fujikura, Aimin Liu, Akihito Hamamatsu, Taketomo Sato and Hideki Hasegawa, "Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces and Their Photoluminescence Characteristics", Japanese Journal of Applied Physics Part 1, Vol.39, pp. 4616-4620, (2000)
- Tohiyuki Yoshida, and Hideki Hasegawa, "Ultrahigh-Vacuum Contactless Capacitance Voltage Characterization of Hydrogen-Terminated-Free Silicon Surfaces", Japanese Journal of Applied Physics Part 1, Vol.39, pp. 4504-4508, (2000)
- Masanobu Iwaya, Seiya Kasai, Hiroshi Okada, Jin Nakamura and Hideki Hasegawa, "Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors", Japanese Journal of Applied Physics Part 1, Vol.39, pp. 4651-4652, (2000)
- H. Hasegawa, T. Sato and S. Kasai, "Unpinning of Fermi level in nanometer-sized Schottky contacts on GaAs and InP", Applied Surface Science, Vol.166, pp. 92-96, (2000)
- Hiroshi Takahashi, and Hideki Hasegawa, "In Situ UHV Contactless C-V and XPS Characterizatio of Surface Passivation Process for InP Using a Partially Nitrided Si Interface Control Layer", Applied Surface Science, Vol.166, pp. 526-531, (2000)
- T. Muranaka, C. Jiang, A. Ito and H. Hasegawa, "Origin of non-uniformity in MBE grown nanometer-sized InGaAs ridge quantum wires and its removal by atomic hydrogen-assisted cleaning", Thin Solid Films, Vol.380, pp. 189-191, (2000)
- Hideki Hasegawa "Microscopic Understanding and Control of Surfaces and Interfaces of Compound Semiconductors for Mesoscopic Devices", Surface Review and Letters, Vol.7, pp. 583-588, (2000)
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