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研究業績 |
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Publication
** 1998 **
- B. Adamowicz, and H. Hasegawa, "Computer analysis of Surface Recombination process at Si and compound semiconductor surfaces and behavior of surface recombination velocity", Japanese Journal of Applied Physics Part 1, Vol.37, pp. 1631-1637, (1998)
- Hiroshi Takahashi, Tamotsu Hashizume and Hideki Hasegawa, "Novel InP Metal-Insulator-Semiconductor Structure Having and Ultrathin Silicon Interface Control Layer", Applied Surface Science, Vol.123/124, pp. 615-618, (1998)
- Y. Satoh, S. Kasai, K. Jinushi and H. Hasegawa, "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG", Japanese Journal of Applied Physics Part 1, Vol.37, pp. 1584-1590, (1998)
- H. Fujikura, Y. Hanada, M. Kihara and H. Hasegawa, "Controlled Formation of Narrow and Uniform InP-Based In0.53Ga0.47 As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy", Japanese Journal of Applied Physics Part 1, Vol.37, pp. 1584-1590, (1998)
- Tamotsu Hashizume, Kengo Ikeya, Morimichi Muto and Hideki Hasegawa, "Surface Passivation of GaAs with Ultrathin Si3N4/Si Interface Control Layer Formed by MBE and in situ ECR Plasma Nitridation", Applied Surface Science, Vol.123/124, pp. 599-602, (1998)
- N. Tsurumi, Y. Ishikawa, T. Fukui and H. Hasegawa, "In-situ Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs (001)- (2x4) Surface", Japanese Journal of Applied Physics Part 1, Vol.37, pp. 1501-1507, (1998)
- T. Hashizume, Y. Ishikawa, T. Yoshida and H. Hasegawa, "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2x4) GaAs Surfaces", Japanese Journal of Applied Physics Part 1, Vol.37, pp. 1626-1630, (1998)
- Hideki Hasegawa, Taketomo Sato, Hiroshi Okada, Kei-ichiro Jinushi, Seiya Kasai and Yoshihiro Satoh, "Electrochemical Formation and Characterization of Schottky In-Plane and Wrap Gate Structures for Realization of GaAs- and InP-Based Quantum Wires and Dots", Applied Surface Science, Vol.123/124, pp. 335-338, (1998)
- B. Adamowicz, K. Ikeya, M. Mutoh, T. Saitoh, H. Fujikura and H. Hasegawa, "Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer", Physica E, Vol.2, pp. 261-266, (1998)
- Y. Ishikawa, N. Tsurumi, T. Fukui and H. Hasegawa, "Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi Level pinning on GaAs (110) surfaces grown by molecular beam epitaxy", Journal of Vacuum Science and Technology B, Vol.16, pp. 2387-2394, (1998)
- S. Chakraborty, T. Yoshida, T. Hashizume and H. Hasegawa, "Formation of ultrathin oxynitride layers on Si(100) by low-temperature electron cyclotron resonance N2O plasma oxynitridation process", Journal of Vacuum Science and Technology B, Vol.16, pp. 2159-2164, (1998)
- H. Okada, H. Fujikura, T. Hashizume and H. Hasegawa, "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE", Solid State Electronics, Vol.42, pp. 1419-1423, (1998)
- Y. Hanada, N. Ono, H. Fujikura and H. Hasegawa, "Direct Formation of InGaAs Coupled Quantum Wire-Dot Structures by Selective Molecular Beam Epitaxy on InP Patterned Substrates", Solid State Electronics, Vol.42, pp. 1413-1417, (1998)
- H. Fujikura, M. Kihara and H. Hasegawa, "Formation of Highly Uniform InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates", Thin Solid Filmes, Vol.336, pp. 22-25, (1998)
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