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Ed.,Writing		 2005　2004　2003　2002　2001　2000
1999　1998　1997　1996　1995　1994...
Publication
** 1991-1994 **
  1. 1. M. Akazawa, H. Ishii and H. Hasegawa, "Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin MBE Si Layers", Jpn. J. Appl. Phys., Vol. 30, pp. 3744-3749 (1991)
  2. T. Saitoh, H. Iwadate and H. Hasegawa, "In-Situ Surface State Spectroscopy by Photoluminescence and Surface Current Transport for Compound Semiconductors", Jpn. J. Appl. Phys., Vol. 30, pp. 3750-3754 (1991)
  3. B. X. Yang and H. Hasegawa, "Migration Enhanced Epitaxy of InP Using Polycrystalline InP as Phosphorus Source", Jpn. J. Appl. Phys., Vol. 30, pp. 3782-3787 (1991)
  4. H. Hasegawa, H. Ishii and M. Akazawa, "Formation Mechanism of Schottky Barriers on MBE Grown GaAs Surfaces Subjected to Various Treatments", Applied Surface Science, Vol. 56-58, pp. 317-324 (1992)
  5. T. Saitoh and H. Hasegawa, "Relationship among Surface State Distribution, Recombination Velocity and Photoluminescence Intensity on Compound Semiconductor Surfaces", Applied Surface Science, Vol. 56-58, pp. 94-99 (1992)
  6. H. Tomozawa, K. Numata and H. Hasegawa, "Interfaces States at Lattice-Matched and Pseudomorphic Hetero-structures", Applied Surface Science, Vol. 60-61, pp. 721-728 (1992)
  7. H. Fujikura, H. Tomozawa, M. Akazawa and H. Hasegawa, "Fabrication Process and Properties of InGaAs Wires Having Si Interface Control Layers for Removal of Fermi Level Pinning", Applied Surface Science, Vol. 60-61, pp. 702-709 (1992)
  8. M. Akazawa, H. Hasegawa, H. Tomozawa and H. Fujikura, "Reappraisal of Si-Interlayer-Induced Change of Band Discontinuity at GaAs-AlAs Heterointerface Taking Account of Delta-Doping", Jpn. J. Appl. Phys., Vol. 31, pp. L1012-L1014 (1992)
  9. B. X. Yang, and H. Hasegawa, "Molecular Beam Epitaxy and Migration Enhanced Epitaxial Growth of InP Using Polycrystalline InP as Phosphorus Source", Japanese Journal of Applied Physics Part 1, Vol.32, pp. 704-710, (1993)
  10. K.Koyanagi, S.Kasai and H. Hasegawa, "Control of GaAs Schottky Barrier Height by Ultrathin MBE Si Interface Control Layer", Japanese Journal of Applied Physics Part 1, Vol.32, pp. 502-509, (1993)
  11. T. Sawada, K.Numata, S.Tohdoh, T. Saitoh and H. Hasegawa , "In-Situ Characterization of Compound Semiconductor Surfaces by Novel Photoluminescence Surface State Spectroscopy", Japanese Journal of Applied Physics Part 1, Vol.32, pp. 511-517, (1993)
  12. S.Kodama, M. Akazawa, H.Fujikura and H. Hasegawa, "Interface Profile Optimization in Novel Surface Passivation Scheme for InGaAs Nanostructures Using Si Interface Control Layer", Journal of Electronic Materials, Vol.22, pp. 289-295, (1993)
  13. T.Hashizume, H. Hasegawa, T. Sawada, A.Grub and H.L.Hartnagel, "Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process", Japanese Journal of Applied Physics Part 1, Vol.32, pp. 486-490, (1993)
  14. T. Saitoh, Y.Nishimoto, T. Sawada and H. Hasegawa, "A Novel Contactless and Nondestructive Measurement Method of Surface Recombination Velocity on Silicon Surfaces by Photoluminescence", Japanese Journal of Applied Physics Part 1, Vol.32, pp. 272-277, (1993)
  15. H. Hasegawa "Material and Device Technology Towards Quantum LSIs", IEICE Trans.Electron., Vol.E-76C, pp. 1045-1055, (1993)
  16. H. Hasegawa "In-situ Characterization and Control of Compound Semiconductor Interfaces", Phil. Trans. R. Soc. Lond. A 344, Vol., pp. 145-153, (1993)
  17. T. Sawada, S.Tohdoh, T. Saitoh, H. Tomozawa and H. Hasegawa, "In-Situ Photoluminescence Characterization of Growth Interrupted Interfaces of MBE GaAs", Inst. Phys. Conf. Ser., Vol.129, pp. 387-392, (1993)
  18. M. Akazawa, H. Hasegawa, H. Tomozawa, and H. Fujikura, "Investigation of Valence Band Offset Modification at GaAs-AlAs and InGaAs-InAlAs Hetero-interfaces Induced by Si Interlayer", Inst. Phys. Conf. Ser., Vol.129, pp. 253-256, (1993)
  19. S. Goto, J. Ishizaki, T. Fukui and H. Hasegawa, "Atomic Layer Epitaxy Growth of GaAs/InAs Superlattice Structure", Inst. Phys. Conf. Ser., Vol.129, pp. 139-144, (1993)
  20. Z.Sobiesierski, DI Westwood, DA Woolf, T. Fukui and H. Hasegawa, "Photoluminescence Spectroscopy of Near-Surface Quantum Wells; Electronic Coupling between Quantized Energy Levels and the Sample Surface", Journal of Vacuum Science and Technology B, Vol.11, pp. 1723-1726, (1993)
  21. 謝永桂、鈴木 敏、澤田 孝幸、長谷川 英機、「Ｓｉ超薄膜界面制御層を用いたＩｎＧａＡｓ ＭＩＳＦＥＴの製作とその電気的特性の評価」、電子情報通信学会論文誌C-II、J76-C III巻、501-510頁、1993年
  22. B. X. Yang, and H. Hasegawa, "Behavior of Growth Rate in Gas Source Molecular Beam Epitaxial Growth of InP Using Phosphine", Japanese Journal of Applied Physics Part 1, Vol.33, pp. 742-748, (1994)
  23. N.J.Wu, T.Hashizume and H. Hasegawa, "Formation of Oxide-Free Nearly Ideal Pt/GaAs Schottky Barriers by a Novel In-Situ Photo-Pulse-Assisted Electrochemical Process", Japanese Journal of Applied Physics Part 1, Vol.33, pp. 936-941, (1994)
  24. H. Fujikura, T.Iwa-ana and H. Hasegawa, "Fabrication of InGaAs Wires by Preferential MBE Growth on Corrugated InP Substrate", Japanese Journal of Applied Physics Part 1, Vol.33, pp. 919-924, (1994)
  25. J. Ishizaki, S. Goto, M.Kishida, T. Fukui and H. Hasegawa, "Mechanism of Multiatomic Step Formation during MOCVD Growth of GaAs on (001) Vicinal Substrate Studied by Atomic Force Microscopy", Japanese Journal of Applied Physics Part 1, Vol.33, pp. 721-726, (1994)
  26. G.Schweeger, H. Hasegawa, H.L.Hartnagel, "Fabrication and Characterization of Direct Schottky Contacts to Two-Dimensional Electron Gas in GaAs/AlGaAs Quantum Wells", Japanese Journal of Applied Physics Part 1, Vol.33, pp. 779-785, (1994)
  27. T.Hashizume, H. Hasegawa, R.Riemenschneider and H.L.Hartnagel, "Process Induced Defects in InP Produced by Chemical Vapor Deposition of Surface Passivation Dielectrics", Japanese Journal of Applied Physics Part 1, Vol.33, pp. 727-733, (1994)
  28. S. Goto, J. Ishizaki, T. Fukui and H. Hasegawa, "Novel Step Height Reduction Phenomenon during Alkyl-Desorption Limited Atomic Layer Epitaxial Growth on Vicinal Substrate", Japanese Journal of Applied Physics Part 1, Vol.33, pp. 734-741, (1994)
  29. Y.Ishikawa, H. Ishii, H. Hasegawa and T. Fukui, "Macroscopic Electronic Behavior and Atomic Arrangements of GaAs Surfaces Immersed in HCI Solution", Journal of Vacuum Science and Technology B, Vol.12, pp. 2713-2719, (1994)
  30. T.Hashizume, G.Schweeger, N.J.Wu and H. Hasegawa, "A Novel In-situ Electrochemical Technology for Formation of Oxide-and Defect-Free Contacts to GaAs and Related Low-Dimensional Structures", Journal of Vacuum Science and Technology B, Vol.12, pp. 2660-2666, (1994)
  31. S. Hara, J. Ishizaki, J. Motohisa, T. Fukui, and H. Hasegawa, "Formation and Photoluminescence Characterization of Quantum Well Wires Using Multiatomic Steps Grown by Metalorganic Vapor Phase Epitaxy", Journal of Crystal Growth, Vol.145, pp. 692-697, (1994)
  32. K.Kumakura, M.Kishida, J.Motohisa, T.Fukui and H.Hasegawa, "Dynamics of Selective MOVPE Growth for GaAs/AlGaAs Micro-Pyramids", Journal of Crystal Growth, Vol.145, pp. 308-313, (1994)
  33. T. Saitoh, H. Hasegawa and T. Sawada, ﾒA Novel In-situ Characterization Method of Quantum Structures by Excitation Power Dependence of Photoluminescence", Inst. Phys. Conf. Ser., Vol.136, pp. 795-800, (1994)
  34. R. Nozel, T. Fukui, H. Hasegawa, J. Temmyo and T. Tamamura, "Atomic Force Microscopy Study of Strained InGaAs Quantum Disks Self-organizing on GaAs (n11)B Substrates", Applied Physics Letters, Vol.65, pp. 2854-2856, (1994)
  35. T. Saitoh, Y. Nishimoto and H. Hasegawa, "Measurement of Surface Recombination Velocity of Silicon Wafers under Sunlight Condition by Novel Photoluminescence Surface State Spectroscopy", Solar Energy Materials and Solar Cells, Vol.34, pp. 161-167, (1994)
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