|
Publication
** 2005 **
- T. Sato, I. Tamai, H. Hasegawa, "Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 23, no.4, (2005), 1706-1713.
- N. Shiozaki, T. Sato, H. Hasegawa, "Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol.23, no.4, (2005), 1714-1721.
- J. Kotani, S. Kasai, T. Hashizume, H. Hasegawa, "Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol.23, no. 4, (2005), 1799-1807.
- R. Jia, S. Kasai, H. Hasegawa, "Anomalous current leakage and depletion width control in nanometer scale Schottky gates formed on AlGaAs/GaAs surface", COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS INSTITUTE OF PHYSICS CONFERENCE SERIES , vol.184, (2005), 21-26.
- M. Yumoto, S. Kasai, H. Hasegawa, "Speed-power performances of quantum wire switches controlled by nanometer-scale schottky wrap gates for GaAs based hexagonal BDD quantum LSIs", COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS INSTITUTE OF PHYSICS CONFERENCE SERIES, vol.184, (2005), 213-216.
- H. Hasegawa, T. Sato, "Electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures", ELECTROCHIMICA ACTA, vol.50, no.15, (2005), 3015-3027.
- T. Sato, T. Oikawa, H. Hasegawa, "Growth of AlGaN/GaN quantum wire structures by radio-frequency-radical-assisted selective molecular beam epitaxy on prepatterned substrates", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 44, no.4B, (2005), 2487-2491.
- I. Tamai, T. Sato, H. Hasegawa, "Cross-sectional evolution and its mechanism during selective molecular beam epitaxy growth of GaAs quantum wires on (111)B substrates", JAPANESE JOURNAL OF APPLIED PHYSICS, vol.44, no.4B, (2005), 2652-2656.
- A.M. Hashim, S. Kasai, T. Hashizume, H. Hasegawa, "Large modulation of conductance in interdigital-gated HEMT devices due to surface plasma wave interactions", JAPANESE JOURNAL OF APPLIED PHYSICS, vol.44, no.4B, (2005), 2729-2734.
- N. Shiozaki, S. Anantathanasarn, T. Sato, T. Hashizume, H. Hasegawa, "Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation", APPLIED SURFACE SCIENCE, vol.244, no.1-4, (2005) 71-74.
- T. Oikawa, F. Ishikawa, T. Sato, T. Hashizume, H. Hasegawa, "Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates", APPLIED SURFACE SCIENCE, vol.244, no. 1-4, (2005) 84-87.
- K. Matsuo, N. Negoro, J. Kotani, T. Hashizume, H. Hasegawa, "Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure", APPLIED SURFACE SCIENCE, vol. 244, no.1-4, (2005), 273-276.
- K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui and H. Hasegawa: "Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence", Applied Physics Letters 86 (2005) 0521051-0521054.
 |
