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Publication
** 1995 **
  1. T. Hashizume, H. Okada, N.-J. Wu and H. Hasegawa, "Depletion Characteristics of Direct Schottky Contacts to Quantum Wells Formed by In Situ Selective Electrochemical Process", Japanese Journal of Applied Physics Part 1, Vol.34, pp. 1149-1152, (1995)
  2. H. Okada, K. Jinushi, N.-J. Wu, T. Hashizume and H. Hasegawa, "Novel Wire Transistor Structure with In-Plane-Gate Using Direct Schottky Contacts to 2DEG", Japanese Journal of Applied Physics Part 1, Vol.34, pp. 1315-1319, (1995)
  3. A. Malinin, H. Tomozawa, T. Hashizume and H. Hasegawa, "Characterization of Deep Levels in Si-doped InxAl1-xAs Layers Grown by Molecular Beam Epitaxy", Japanese Journal of Applied Physics Part 1, Vol.34, pp. 1138-1142, (1995)
  4. J. Motohisa, K. Kumakura, M. Kishida, T. Yamazaki, T. Fukui, H. Hasegawa and K. Wada, "Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates", Japanese Journal of Applied Physics Part 1, Vol.34, pp. 1098-1101, (1995)
  5. S. Kodama, S. Koyanagi, T. Hashizume and H. Hasegawa, "Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon Interface Control Layer and Its Application to Near-Surface Quantum Wells", Japanese Journal of Applied Physics Part 1, Vol.34, pp. 1143-1148, (1995)
  6. N.-J. Wu, T. Hashizume, H. Hasegawa and Y. Amemiya, "Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel In Situ Electrochemical Process", Japanese Journal of Applied Physics Part 1, Vol.34, pp. 1162-1167, (1995)
  7. B. X. Yang, L. He and H. Hasegawa, "Properties of InAsxP1-x Layer Formed by P-As Exchange Reaction on (001)InP Surface Exposed to As4 Beam", Journal of Electronic Materials, Vol.25, pp. 379-384, (1995)
  8. J. Temmyo, Kozen, A., Tamamura, T., Notzel, R., Fukui, T., Hasegawa, "Self-organization phenomenon of strained InGaAs on InP (311) substrates grown by metalorganic vapor phase epitaxy", Journal of Electronic Materials, Vol.25, pp. 431-437, (1995)
  9. S. Shiobara, K. Sasaki and H. Hasegawa, "Surface Electrical Breakdown Characteristics of Molecular Beam Epitaxial Layers Grown at Low Temperatures.", Solid State Electronics, Vol.38, pp. 1685-1690, (1995)
  10. S. Suzuki, S. Kodama and H. Hasegawa, "A Novel Passivation Technology of InGaAs Surfaces Using Si Interface Control Layer and Its Application to Field Effect Transistor", Solid State Electronics, Vol.38, pp. 1679-1683, (1995)
  11. H. Hasegawa, S. Kodama, S. Koyanagi and T. Hashizume, "More than 103 Times Photoluminescence Intensity Recovery by Silicon Interface-Control-Layer-Based Surface Passivation of Near-Surface Quantum Wells", Japanese Journal of Applied Physics Part 1, Vol.34, pp. L495-L498 , (1995)
  12. S. Kodama, S. Koyanagi, T. Hashizume and H. Hasegawa, "Silicon Interlayer Based Surface Passivation of Near-Surface Quantum Wells", Journal of Vacuum Science and Technology B, Vol.13, pp. 1794-1800, (1995)
  13. H. Hasegawa, T. Hashizume, H. Okada, and K. Jinushi, "Fabrication and Characterization of Quantum Wire Transistors with Schottky In-Plane Gates Formed by an In-situ Electrochemical Process", Journal of Vacuum Science and Technology B, Vol.14, pp. 1744-1750, (1995)
  14. H. Fujikura, and H. Hasegawa, "Fabrication of InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy and their Characterization", Journal of Crystal Growth, Vol.150, pp. 327-331, (1995)
  15. T. Ozeki, B. X. Yang and H. Hasegawa, "A New Method of Flux Calibration for Gas Source Molecular Beam Epitaxy of InP and Its Application to Migration Enhanced Epitaxy", Journal of Crystal Growth, Vol.150, pp. 602-606, (1995)
  16. T. Hashizume, H. Okada, K. Jinushi and H. Hasegawa, "Observation of Conductance Quantization in A Novel Schottky In- Plane Gate Wire Transistor Fabricated by Low-Damage In Situ Electrochemical Process", Japanese Journal of Applied Physics Part 1, Vol.34, pp. L635-L638 , (1995)
  17. R. Nozel, T. Fukui, H. Hasegawa, J. Temmyo, and T. Tamamura, "Self-organized Microstructure Growth", Chemical Vapor Deposition, Vol.1, pp. 81-88, (1995)
  18. R. Nozel, J. Temmyo, T. Tamamura, T. Fukui, and H. Hasegawa, "Ordered quantum dots: Atomic force microscopy study of a new self-organizing growth mode on GaAs (311)B substrates", Japanese Journal of Applied Physics Part 1, Vol.34, pp. L872-L875 , (1995)
  19. T. Saitoh, H. Tomozawa, T. Nakagawa, H. Takeuchi and H. Hasegawa, "In-Situ Photoluminescence and Capacitance-Voltage Characterization of InAlAs/InGaAs Regrown Heterointerfaces by Molecular Beam Epitaxy", Journal of Crystal Growth, Vol.150, pp. 96-100, (1995)
  20. T. Fukui, J. Ishizaki, S. Hara, J. Motohisa and H. Hasegawa, "Multiatomic Step Formation Mechanism of Metalorganic Vapor Phase Epitaxy Grown GaAs Vicinal Surfaces and Its Application to Quantum Well Wires", Journal of Crystal Growth, Vol.146, pp. 183-187, (1995)
  21. H. Hasegawa "Passivation and Control of Semiconductor Interfaces by Interface Control Layers", Materials Science Forum, Vol.185/188, pp. 23-36, (1995)
  22. T. Saitoh, and H. Hasegawa, "Determination of Interface State Density Distribution and Surface Recombination Velocity on Passivated Semiconductor Surfaces by Photoluminescence Surface State Spectroscopy", Materials Science Forum, Vol.185/188, pp. 53-58, (1995)
  23. R. Nozel, J. Temmyo, A. Kozen, T. Tamamura, T. Fukui, and H. Hasegawa, "Self-organization of strained GaInAs microstructures on InP (311) substrates grown by metalorganic vapor phase epitaxy", Applied Physics Letters, Vol.66, pp. 2525-2527, (1995)
  24. S. Kodama, T. Hashizume and H. Hasegawa, "Photoluminescence and X-ray Photoelectron Study of AlGaAs/GaAs　Near-Surface Quantum Wells by a Novel Interface Control Technique", Japanese Journal of Applied Physics Part 1, Vol.34, pp. 4540-4543, (1995)
  25. K. Yoh, H. Takeuchi, H. Hasegawa, S. Izumiya and M. Inoue, "Improvements of Drain Current Characteristics of InAs Field-Effect Transistors by the Surface Reaction of Platinum Gate", Solid State Electronics, Vol.38, pp. 1611-1614, (1995)
  26. S. Hara, J. Motohisa, T. Fukui and H. Hasegawa, "Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001) GaAs Surfaces by Metalorganic Vapor Phase Epitaxy", Japanese Journal of Applied Physics Part 1, Vol.34, pp. 4401-4404, (1995)
  27. K. Kumakura, K. Nakakoshi, J. Motohisa, T. Fukui and H. Hasegawa, "Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy", Japanese Journal of Applied Physics Part 1, Vol.34, pp. 4387-4389, (1995)
  28. H. Fujikura, and H. Hasegawa, "Fabrication of InP-based InGaAs ridge quantum wires utilizing selective molecular beam epitaxial growth on (311)A facets", Journal of Electronic Materials, Vol.25, pp. 619-625, (1995)
  29. S. Suzuki, S. Kodama, H. Tomozawa and H. Hasegawa, "A Novel Insulated Gate Technology for InGaAs High Electron Mobility Transistors Using Silicon Interlayer Based Passivation Technique", Journal of Electronic Materials, Vol., pp. -, (1995)
  30. H. Okada, T. Hashizume and H. Hasegawa, "Transport Characterization of Schottky In-Plane Gate Al0.3Ga0.7As/GaAs Quantum Wire Transistors Realized by In-Situ Electrochemical Process", Japanese Journal of Applied Physics Part 1, Vol.34, pp. 6971-6976, (1995)

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