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研究業績 |
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Publication
** 1997 **
- H. Fujikura, M. Kubo and H. Hasegawa, "Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires having Silicon Interlayer-Based Edge Passivation and Its Interpretation", Japanese Journal of Applied Physics Part 1, Vol.36, pp. 1937-1943, (1997)
- T. Hashizume, S. Shiobara and H. Hasegawa, "Dominant Electron Trap with Metastable State in Molecular Beam Epitaxial GaAs Grown at Low Temperatures", Japanese Journal of Applied Physics Part 1, Vol.36, pp. 1775-1780, (1997)
- Y. Ishikawa, T. Fukui and H. Hasegawa, "Missing-Dimer Structures and Their Kink Defects on Molecular Beam Epitaxially Grown (2x4) Reconstructed (001) InP and GaAs Surfaces Studied by Ultrahigh-Vacuum Tunneling Microscopy", Japanese Journal of Applied Physics Part 1, Vol.36, pp. 1749-1755, (1997)
- K. Ikeya, T. Hashizume and H. Hasegawa, "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control Layer-Based Technique", Japanese Journal of Applied Physics Part 1, Vol.36, pp. 1756-1762, (1997)
- T. Yoshida, T. Hashizume and H. Hasegawa, "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111) Surfaces by Contactless Capacitance-voltage and Photoluminescence Methods", Japanese Journal of Applied Physics Part 1, Vol.36, pp. 1453-1459, (1997)
- T. Sato, S. Uno, T. Hashizume and H. Hasegawa, "Large Schottky Barrier Height on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process", Japanese Journal of Applied Physics Part 1, Vol.36, pp. 1811-1817, (1997)
- Y. Dohmae, S. Suzuki, T. Hashizume and H. Hasegawa, "Capacitance-voltage Behavior of Insulated Gate InGaAs HEMT Capacitors Having Silicon Interface Control Layer", Japanese Journal of Applied Physics Part 1, Vol.36, pp. 1834-1840, (1997)
- M. Araki, Y. Hanada, H. Fujikura and H. Hasegawa, "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned (001) InP Substrates", Japanese Journal of Applied Physics Part 1, Vol.36, pp. 1763-1769, (1997)
- S. Kasai, K. Jinushi, H. Tomozawa and H. Hasegawa, "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas", Japanese Journal of Applied Physics Part 1, Vol.36, pp. 1678-1685, (1997)
- H. Okada, H. Fujikura, T. Hashizume and H. Hasegawa, "Observation of Coulomb Blockade Type Conductance Oscillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates", Japanese Journal of Applied Physics Part 1, Vol.36, pp. 1672-1677, (1997)
- Yasuhiko Ishikawa, Takashi Fukui and Hideki Hasegawa, "Kink Defects and Fermi Level Pinning on (2x2) Reconstructed Molecular Beam Epitaxially Grown Surfaces of GaAs and InP Studied by Ultrahigh-Vacuum Scanning Tunneling Microscopy and x-ray Photoelectron Spectroscopy", Journal of Vacuum Science and Technology B, Vol.15, pp. 1163-1172, (1997)
- Hideki Hasegawa, Taketomo Sato and Tamotsu Hashizume, "Evolution Mechanism of Nearly Pinning-Free Platinum/n-type Indium Phosphide Interface with a High Schottky Barrier Height by in situ Electrochemical Process", Journal of Vacuum Science and Technology B, Vol.15, pp. 1227-1235, (1997)
- Hiroshi Okada, Seiya Kasai, Hajime Fujikura, Tamotsu Hashizume and Hideki Hasegawa, "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires", Japanese Journal of Applied Physics Part 1, Vol.36, pp. 4156-4160, (1997)
- Hajime Fujikura, Moriaki Araki, Yuuki Hanada, Michio Kihara and Hideki Hasegawa, "Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy", Japanese Journal of Applied Physics Part 1, Vol.36, pp. 4092-4096, (1997)
- H. Hasegawa "Interface Controlled Schottky Barriers on InP and Related Materials", Solid State Electronics, Vol.41, pp. 1441-1450, (1997)
- Hideki Hasegawa, and Hajime Fujikura, "Formation of InP-Based Quantum Structures by Selective MBE on Patterned Substrates having High-Index Facets", Microelectronics Journal, Vol.28, pp. 887-901, (1997)
- Michio Kihara, Hajime Fujikura and Hideki Hasegawa, "Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy", Applied Surface Science, Vol.117/118, pp. 695-699, (1997)
- K. Iizuka, T. Hashizume and H. Hasegawa, "Small-Signal Response of Interface States at Passive InGaAs Surfaces from Low Frequencies up to Microwave Frequencies", Solid State Electronics, Vol.41, pp. 1463-1468, (1997)
- S. Suzuki, Y. Dohmae and H. Hasegawa, "Fabrication and Electrical Characterization of InP-Based Insulated Gate Power HEMTs Using Ultrathin Si Interface Control Layer", Solid State Electronics, Vol.41, pp. 1641-1646, (1997)
- T. Kudoh, Hiroshi Okada, Tamotsu Hashizume and Hideki Hasegawa, "Controlled Formation of Metal-Semiconductor Interface to 2DEG Layer by in-situ Electrochemical Process and Its Application to In-Plane Gated Electron Waveguide Devices", Applied Surface Science, Vol.117/118, pp. 342-346, (1997)
- Hideki Hasegawa, Satoshi Kodama, Kenya Ikeya and Hajime Fujikura, "Excitation Power Dependent Photoluminescence Characterization of Insulator-Semiconductor Interfaces on Near Surface Quantum Structures Passivated by Silicon Interface Control Layer Technology", Applied Surface Science, Vol.117/118, pp. 710-713, (1997)
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