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Ed.,Writing		 2005　2004　2003　2002　2001　2000
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Publication
** 2002 **
  1. Tetsuro Hirano, Akira Ito, Taketomo Sato, Fumitaro Ishikawa and Hideki Hasegawa, "Electrochemical Formation of Self-Assembled Nanopore Arrays and Their Use as Templates for MBE Growth of InP-based Quantum Wires and Dots", Japanese Journal of Applied Physics Part 1, Vol.41, pp. 977-981, (2002)
  2. Z. Fu, H. Takahashi, S. Kasai, and H. Hasegawa , "Optimization and Interface Characterization of a Novel Oxide-Free Insulated Gate Structure for InP Having an Ultrathin Silicon Interface Control Layer ", Japanese Journal of Applied Physics Part 1, Vol.41, pp. 1062-1066, (2002)
  3. C. Jiang, and H.Hasegawa, "Molecular Beam Epitaxy Growth of High-Quality Linear Arrays of InGaAs Ridge Quantum Wires with Nanometer Wire Widths and Submicron Wire Pitches on Patterned InP Substrates ", Japanese Journal of Applied Physics Part 1, Vol.41, pp. 972-976, (2002)
  4. Masahiro Moniwa, and Hideki Hasegawa, "Influence of Initial Amorphous Layer deposition Temperature on Lateral Solid-phase Epitaxy on Silicon", Japanese Journal of Applied Physics Part 1, Vol.41, pp. 472-481, (2002)
  5. T. Muranaka, S. Kasai, C. Jiang and H. Hasegawa, "Control of morphology and wire width in InGaAs ridge quantum wires grown by atomic hydrogen-assisted selective molecular beam epitaxy", Physica E, Vol.13, pp. 1185-1189, (2002)
  6. S. Kasai, and H. Hasegawa, "GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture", Physica E, Vol.13, pp. 925-929, (2002)
  7. Y. Nakano, N. Negoro and H. Hasegawa, "Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4x6) Reconstruction", Japanese Journal of Applied Physics Part 1, Vol., pp. -, (2002)
  8. Chao Jiang, Tsutomu Muranaka and Hideki Hasegawa, "Structural and Optical Properties of InGaAs Ridge Quantum Wire Arrays with Sub-micron Pitches Grown by Selective MBE on InP Substrates", Japanese Journal of Applied Physics Part 1, Vol.41, pp. 2683-2688, (2002)
  9. M. Endo, Z. Jin, S. Kasai and H. Hasegawa, "Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures", Japanese Journal of Applied Physics Part 1, Vol.41, pp. 2689-2693, (2002)
  10. Y. Nakano, N. Negoro and H. Hasegawa, "Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4x6) Reconstruction", Japanese Journal of Applied Physics Part 1, Vol.41, pp. 2542-2547, (2002)
  11. M. Yumoto, S. Kasai and H. Hasegawa, "Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires", Japanese Journal of Applied Physics Part 1, Vol.41, pp. 2671-2674, (2002)
  12. S. Oyama, T. Hashizume and H. Hasegawa, "Mechanism of current leakage through metal/n-GaN interfaces", Applied Surface Science, Vol.190, pp. 322-325, (2002)
  13. Sanguan Anantathanasarn, Hideki Hasegawa, "Photoluminescence and Capacitance-Voltage Characterization of GaAs Surface Passivated by an Ultrathin GaN Interface Control Layer", Applied Surface Science, Vol.190, pp. 343-347, (2002)
  14. A. Ito, T. Muranaka, C. Jiang, and H. Hasegawa, "Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy", Applied Surface Science, Vol.190, pp. 231-235, (2002)
  15. M. Yumoto, S. Kasai. and H. Hasegawa, "Gate Control Characteristics in GaAs Nanometer-Scale Schottky Wrap Gate", Applied Surface Science, Vol.190, pp. 242-246, (2002)
  16. N.Negoro, S. Kasai and H. Hasegawa, "Scanned-Probe Topological and Spectroscopic Study of Surface States on Clean and Si-deposited GaAs (001)-c(4x4) Surfaces ", Applied Surface Science, Vol.190, pp. 269-274, (2002)
  17. Z. Fu, S. Kasai, and H. Hasegawa , "Gated photoluminescence study of oxide-free InP MIS structure having an ultrathin silicon interface control layer", Applied Surface Science, Vol.190, pp. 298-301, (2002)
  18. S. Kasai, H. Hasegawa, "III-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks", Applied Surface Science, Vol.190, pp. 176-183, (2002)
  19. Zhi Jin, Tamotsu Hashizume and Hideki Hasegawa, "Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride", Applied Surface Science, Vol.190, pp. 361-365, (2002)
  20. F. Ishikawa, and H. Hasegawa, "Depth-resolved Cathodoluminescence characterization of buried inGaP/GaAs heterointerfaces.", Applied Surface Science, Vol.190, pp. 508-512, (2002)
  21. K. Miczek, B. Adamowicz and H. Hasegawa, "Determination of InP surface state density distribution from excitation-power-dependent photoluminescence spectra using genetic algorithm- based fitting procedure", Surface Science, Vol.507--510, pp. 240-244, (2002)
  22. H. Hasegawa, and S. Oyama, "Mechanism of anomalous current transport in n-type GaN Schottky contacts", Journal of Vacuum Science and Technology B, Vol.20, pp. 1647-1655, (2002)
  23. M. Yumoto, S. Kasai and H. Hasegawa, "Graph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates", Microelectronic Engineering, Vol.36, pp. 287-291, (2002)
  24. Chao Jiang, Tsutomu Muranaka, and Hideki Hasegawa, "MBE Growth Mechanism and Wire Width Control for Formation of Dense Networks of Narrow InGaAs Quantum Wires", Microelectronic Engineering, Vol.63, pp. 293-299, (2002)
  25. S. Kasai, and H. Hasegawa, "A Single Electron Binary-Decision-Diagram Quantum Logic Circuit Based on Schottky Wrap Gate Control of a GaAs Nanowire Hexagon", IEEE Electron Device Letters, Vol.23, pp. 446-448, (2002)
  26. F. Ishikawa, and H. Hasegawa, "Self-Consistent Computer Analysis of Cathodoluminescence In-depth Spectra for Compound Semiconductor Heterostructures", Institute of Physics Conference Series, Vol.170, pp. 461-466, (2002)
  27. Taketomo Sato, Isao Tamai, Chao Jiang and Hideki Hasegawa, "Selective MBE Growth of GaAs/AlGaAs Nanowires on Patterned GaAs (001) Substrates and Its Application to Hexagonal Nanowire Network Formation", Institute of Physics Conference Series, Vol.170, pp. 325-330, (2002)
  28. M. Konishi, S. Anantathanasarn, T. Hashizume and H. Hasegawa, "In-situ XPS and Photoluminescence Characterization of GaN Surfaces Grown by MBE on MOVPE GaN Templates", Institute of Physics Conference Series, Vol.170, pp. 837-842, (2002)
  29. B. Adamowicz, M. Miczek, S. Arabasz and H. Hasegawa, "Rigorous analysis of photoluminescence efficiency for characterization of electronic properties of InP(001) surfaces", Vacuum, Vol.67, pp. 3-10, (2002)
  30. S. Ootomo, T. Hashizume and H. Hasegawa, "A Novel Thin Al2O3 Gate Dielectric by ECR-Plasma Oxidation of Al for AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors ", Physica Status Solidi (c), Vol.0, pp. 90-94, (2002)

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