 |
|
|
研究業績 |
|
|
Publication
** 2003 **
- H. Hasegawa: "Characterization and control of surfaces and interfaces for III-V nanoelectronics", Phys. Stat. Sol. A, vol. 195: 9-17 (2003)
- M. Akazawa and H. Hasegawa: "A UHV contactless capacitance-voltage characterization method applicable to semiconductor layers grown on insulating substrates", Phys. Stat. Sol. A, vol. 195: 248-254 (2003)
- S. Kasai, M. Yumoto and H. Hasegawa: "Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach", Solid State Electron., vol. 47: 199-204 (2003)
- A. Kameda, S. Kasai, T. Sato and H. Hasegawa: "Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs", Solid State Electron., 47: 323-331 (2003)
- T. Kakumu, F. Ishikawa, S. Kasai, T. Hashizume and H. Hasegawa: "Control of order parameter during growth of In0.5Ga0.5P/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylphosphine", Jpn. J. Appl. Phys., vol.42: 2230-2236 (2003)
- H. Hasegawa, T. Muranaka, S. Kasai and T. Hashizume: "Fabrication of AlGaN/GaN quantum nanostructures by methane-based dry etching and characterization of their electrical properties", Jpn. J. Appl. Phys., vol. 42: 2375-2381 (2003)
- F. Ishikawa and H. Hasegawa; "Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures", Appl. Surf. Sci., vol. 212-213: 885-889 (2003)
- H. Hasegawa: "III-V Nanoelectronics and Related Surface/Interface Issues", Appl. Suf. Sci., vol. 212: 313-318 (2003)
- H. Hasegawa; "Formation of III-V low dimensional structures and their applications to intelligent quantum chips", Microelectronics Journal, 34: 341-345 (2003)
- S. Anantathanasarn and H. Hasegawa: "Pinning-free GaAs MIS structures with Si interface control layers formed on (4x6) reconstructed (001) surface", Appl. Suf. Sci., vol. 216: 275-282 (2003)
- T. Inagaki, T. Hashizume and H. Hasegawa: "Effects of Surface Processing on 2DEG Current Transport at AlGaN/GaN Interface Studied by Gateless HFET Structure", Appl. Suf. Sci., vol. 216: 519-525 (2003)
- B. Adamowicz, M. Miczek, C. Brun, B. Gruzza and H. Hasegawa: "Rigorous Analysis of the Electronic Properties of InP Interfacesfor Gas Sensing", Thin Solid Films, vol. 436: 101-106 (2003)
- T. Hashizume, S. Ootomo, T. Inagaki and H. Hasegawa: "Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors", Journal of Vacuum Science and Technology B 21:1828-1838 (2003)
- H. Hasegawa, T. Inagaki, S. Ootomo, T. Hashizume: "Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors", Journal of Vacuum Science and Technology B 21:1844-1855 (2003)
- N. Negoro, S. Anantathanasarn, H. Hasegawa: "Effects of Si deposition on the properties of Ga-rich (4X6) GaAs (001) surfaces", Journal of Vacuum Science and Technology B 21:1945-1952 (2003)
- S. Kasai, W. Han, M. Yumoto, and H. Hasegawa: "Terahertz response of Schottky wrap gate-controlled quantum dots", Physica Status Solidi C vol. 0: 1329-1332 (2003)
- T. Hashizume, S. Ootomo and H. Hasegawa: "Al2O3-based surface passivation and insulated gate structure for AlGaN.GaN HFETs", Physica Status Solidi C, vol. 0: 2380-2384 (2003)
- F. Ishikawa and H. Hasegawa: "Characterization of Recombination Processes in GaN by Cathodoluminescence In-Depth Spectroscopy", Physica Status Solidi C, vol. 0: 2707-2711 (2003)
- S. Ootomo, H. Hasegawa and T. Hashizume: "Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al2O3 Insulated Gate", IEICE Electron, Vol. E86C (10): 2043-2050 (2003)
- T. Hashizume, S. Ootomo and H. Hasegawa: "Suppression of current Collapse in Insulated Gate AlGaN/GaN Heterostructure Field-Effect Transistors Using Ultrathin Al2O3 Dielectric", Applied Physics Letter Vol. 83 (14): 2952-2954 (2003)
- T. Sato, I. Tamai and H. Hasegawa: "Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism", Inst. Phys. Conf. Ser. 174-3, pp.145-148 (2003).
- H. Hasegawa, T. Inagaki, S. Ootomo and T. Hashizume: "Properties of Electronic States at Free Surfaces and Schottky Barrier Interfaces of AlGaN/GaN", Inst. Phys. Conf. Ser. 174-3, pp.299-302 (2003).
- A. Manaf Hashim, T. Hashizume, K. Iizuka and H. Hasegawa: "Plasma Wave Interactions in Microwave to THz Range between Carriers in Semiconductor 2DEG and Interdigital Slow Waves", Superlattice and Microstructures, 34(3-6), 531-537 (2003).
- M. Yumoto, T. Tamura, T. Sato and H. Hasegawa: "Fabrication of BDD Quantum Node Switches on Embedded GaAs Quantum Wires Grown by Selective MBE", Superlattice and Microstructures, 34(3-6), 485-491 (2003).
 |
|
|
