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研究業績 |
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Publication
** 1996 **
- H. Fujikura, and H. Hasegawa, "Photoluminescence and cathodoluminescence investigation of optical properties of InP -based InGaAs ridge quantum wires formed by selective molecular beam epitaxy", Japanese Journal of Applied Physics Part 1, Vol.35, pp. 1333-1339, (1996)
- S. Kasai, and H. Hasegawa, "Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers", Japanese Journal of Applied Physics Part 1, Vol.35, pp. 1334-1347, (1996)
- S. Shiobara, T. Hashizume and H. Hasegawa, "Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy", Japanese Journal of Applied Physics Part 1, Vol.35, pp. 1159-1164, (1996)
- K. Jinushi, H. Okada, T. Hashizume and H. Hasegawa, "Novel GaAs-Based Single-Electron Transistors with Schottky In-Plane Gates Operating up to 20K", Japanese Journal of Applied Physics Part 1, Vol.35, pp. 1132-1139, (1996)
- S. Koyanagi, M. Akazawa, T. Hashizume and H. Hasegawa, "Contactless Characterization of Thermally Oxidized, Air-Exposed and Hydrogen-Terminated Silicon Surfaces by Capacitance-Voltage and Photoluminescence Methods", Japanese Journal of Applied Physics Part 1, Vol.35, pp. 946-953, (1996)
- B. X. Yang, Y. Ishikawa, T. Ozeki and H. Hasegawa, "Scanning Tunneling Microscope Study of (001)InP Surface Prepared by Gas Source Molecular Beam Epitaxy", Japanese Journal of Applied Physics Part 1, Vol.35, pp. 1267-1272, (1996)
- S. Uno, T. Hashizume, S. Kasai, N.-J. Wu and H. Hasegawa, "0.86eV Platinum Schottky Barrier on Indium Phosphide by in Situ Electrochemical Process and Its Application to MESFETs", Japanese Journal of Applied Physics Part 1, Vol.35, pp. 1258-1263, (1996)
- T. Hashizume, S. Koyanagi and H. Hasegawa, "Contactless Capacitance-Voltage and Photoluminescence Characterization of Ultrathin Oxide-Silicon Interfaces Formed on Hydrogen Terminated (111) Surfaces", Journal of Vacuum Science and Technology B, Vol.14, pp. 2872-2881, (1996)
- S. Kasai, T. Hashizume and H. Hasegawa, "Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates", Japanese Journal of Applied Physics Part 1, Vol.35, pp. 6652-6658, (1996)
- H. Fujikura, S. Kodama, T. Hashizume and H. Hasegawa, "Surface Passivation of In0.53Ga0.47As Ridge Quantum Wires Using Silicon Interface Control Layers", Journal of Vacuum Science and Technology B, Vol.14, pp. 2888-2894, (1996)
- T. Saitoh, K. Nakamura, H. Hasegawa and Y.-M. Xiong, "Determination of built-in electric field strength in InP/n+-InP structures using photoellipsometry", Japanese Journal of Applied Physics Part 1, Vol.35, pp. 1696-1700, (1996)
- R. Nozel, J. Temmyo T. Tamamura T. Fukui and H. Hasegawa, "Self-Organized Quantum Dots", Europhysics News, Vol.27, pp. 148-151, (1996)
- T. Hashizume, H. Okada and H. Hasegawa, "Quantum Transport in A Schottky In-Plane-Gate Controlled GaAs/AlGaAs Quantum Well Wires", Physica B, Vol.227, pp. 42-45, (1996)
- H. Tomozawa, K. Jinushi H. Okada T. Hashizume and H. Hasegawa, "Design and Fabrication of GaAs/AlGaAs Single Electron Transistors Based on In-Plane Schottky Gate Control of 2DEG", Physica B, Vol.227, pp. 112-115, (1996)
- R. Nozel, J. Temmyo, A. Kozen ,T. Tamamura, T. Fukui and H. Hasegawa, "Self-Organized Growth of Quantum-Dot Structures", Solid State Electronics, Vol.40, pp. 777-783, (1996)
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