 |
|
|
Research
Activity |
|
|
Publication 61-86
1999-2002
- A. Hamamatsu, C. Kaneshiro, H. Fujikura and H. Hasegawa: Formation
of <001>-Aligned Nano-Scale Pores on (001) n-InP Surfaces by Photoelectrochemical
Anodization in HCl, J. Electroanalytical Chem., 473(1-2), 223-229, 1999.
- Y. Koyama, T. Hashizume and H. Hasegawa: Formation Processes and
Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect
Transistor Applications, Solid State Electronics, 43(8), 1483-1488,
1999.
- H. Takahashi, T. Yoshida, M. Mutoh, T. Sakai and H. Hasegawa: In-situ
Characterization Technique of Compound Semiconductor Heterostructure
Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage
Measurement, Solid State Electronics, 43(8), 1561-1570, 1999.
- H. Sai, H. Fujikura, A. Hirama and H. Hasegawa: Growth of Device
Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy
using Tertiarybutylphosphine, Solid State Electronics, 43(8), 1541-1546,
1999.
- H. Okada, T. Sato, K. Jinushi and H. Hasegawa: GaAs-Based Single
Electron Logic and Memory Devices Using Electro-Deposited Nanometer
Schottky Gates, Microelectronic Engineering 47(1-4), 285-287, 1999.
- T. Muranaka, H. Okada, H. Fujikura and H. Hasegawa: Realization of
InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown
by Selective MBE, Microelectronic Engineering, 47(1-4), 201-203, 1999.
- T. Sato, C. Kaneshiro, H. Okada and H. Hasegawa: Formation of Size-
and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates
by Pulsed Electrochemical Deposition, Japanese Journal of Applied Physics
Part 1, 38(4B), 2448-2452, 1999.
- H. Hasegawa, Y. Koyama and T. Hashizume: Properties of Metal-Semiconductor
Interfaces Formed on n-Type GaN, Japanese Journal of Applied Physics
Part 1, 38(4B), 2634-2639, 1999.
- T. Yoshida, H. Hasegawa and T. Sakai: A Novel Non-Destructive Characterization
Method of Electronic Properties of Pre- and Post-Processing Silicon
Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements,
Japanese Journal of Applied Physics Part 1, 38(4B), 2349-2354, 1999.
- M. Mutoh, N. Tsurumi and H. Hasegawa: Effects of Initial Surface
Reconstruction on Silicon Interface Control Layer Based Passivation
of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System,
Japanese Journal of Applied Physics Part 1, 38(4B), 2538-2543, 1999.
- H. Fujikura, T. Muranaka and H. Hasegawa: Selective Growth of Quantum
Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs
Single Electron Transistor Arrays, Microelectronics, 30(4-5), 397-401,
1999.
- Y. Satoh, H. Okada, K. Jinushi, H. Fujikura and H. Hasegawa: Voltage
Gain in GaAs-Based Lateral Single-Electron Transistors Having Three
Schottky Wrap Gates, Japanese Journal of Applied Physics Part 1, 38(1B),
410-414, 1999.
- H. Fujikura, Y. Hanada, T. Muranaka and H. Hasegawa: Control of Dot
Size and Tunneling Barrier Profile in In0.53Ga0.47As Coupled Quantum
Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned
InP Substrates, Japanese Journal of Applied Physics Part 1, 38(2B),
421-424, 1999.
- H. Takahashi, T. Hashizume and H. Hasegawa: X-ray Photoelectron Spectroscopy
and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization
of Novel Oxide-Free InP Passivation Process Using a Silicon Surface
Quantum Well, Japanese Journal of Applied Physics Part 1, 38(2B), 1128-1132,
1999.
- H. Sai, H. Fujikura and H. Hasegawa: Study of Reflection High-Energy
Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based
Molecular Beam Epitaxial Growth of In0.48Ga0.52P on GaAs, Japanese Journal
of Applied Physics Part 1, 38(2A), 824-831, 1999.
- T. Sato, C. Kaneshiro and H. Hasegawa: The Strong Correlation Between
Interface Microstructure and Barrier Height in n-InP Schottky Contacts
Formed by In Situ Electrochemical Process, Japanese Journal of Applied
Physics Part 1, 38(2B), 1103-1106, 1999.
- T. Muranaka, H. Okada, H. Fujikura and H. Hasegawa: Size-Controlled
Formation of Decananometer InGaAs Quantum Wires by Selective Molecular
Beam Epitaxy on InP Patterned Substrates, Japanese Journal of Applied
Physics Part 1, 38(2B), 1071-1074, 1999.
- H. Hasegawa, Y. Koyama and T. Hashizume: Fermi Level Pinning and
Schottky Barrier Height Control at Metal-Semiconductor Interfaces of
InP and Related Materials, Japanese Journal of Applied Physics Part
1, 38(2B), 1098-1102, 1999.
- M. B. Takeyama, A. Noya, T. Hashizume and H. Hasegawa: Interfacial
Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic
Contact to n-InP, Japanese Journal of Applied Physics Part 1, 38(2B),
1115-1118, 1999.
- H. Sai, H. Fujikura and H. Hasegawa: Gas Source Molecular Beam Epitaxial
Growth of In1-xGa xP on GaAs Using Tertiarybutylphosphine, Japanese
Journal of Applied Physics Part 1, 38(1A), 151-158, 1999.
- H. Fujikura, M. Kihara and H. Hasegawa: Extra-Side-Facet Control
in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum
Wires for Improvement of Wire Uniformity, Japanese Journal of Applied
Physics Part 1, 38(2B), 1067-1070, 1999.
- C. Kaneshiro, T. Sato and H. Hasegawa: Electrochemical Etching of
Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes,
Japanese Journal of Applied Physics Part 1, 38(2B), 1147-1152, 1999.
- H. Hasegawa, H. Fujikura and H. Okada: Molecular Beam Epitaxy and
Device Applications of III-V Semiconductor Nanowires, MRS Bulletin,
24(8), 25-30, 1999.
- C. Kaneshiro, T. Sato and H. Hasegawa: Realization of Strongly Metal-Dependent
Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process,
Inst. Phys. Conf. Ser., 162, 585-590, 1999.
- N. Ono, H. Fujikura and H. Hasegawa: Study of Selective MBE Growth
on Patterned (001) InP Substrates Toward Realization of <100>-Oriented
InGaAs Ridge Quantum Wires, Inst. Phys. Conf. Ser., 162, 385-390, 1999.
- J. Nakamura, T. Kudoh, H. Okada and H. Hasegawa: Transport Properties
of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors,
Inst. Phys. Conf. Ser., 162, 409-414, 1999.
|
 |
|
