 |
|
|
Research
Activity |
|
|
Proceeding 61-90
1999-2002
- S. Ootomo, S. Oyama, T. Hashizume and H. Hasegawa: Characterization
of AlGaN Surfaces after Various Kinds of Surface Treatments, Technical
Program with Abstracts of 42nd 2000 Electronic Materials Conference,
19-20, 2000.
- S. Kasai and H. Hasegawa: GaAs Singele Electron Transistors and Logic
Inverters Based on Schottky Wrap Gate Structures, Conference Digest
of 58th Device Research Conference, 155-156, 2000.
- S. Kasai, N. Negoro and H. Hasegawa: Scanning Tunneling Spectroscopy
Characterization of GaAs Surfaces Passivated by MBE-Grown Ultrathin
Si Layer, Technical Program with Abstracts of 42nd 2000 Electronic Materials
Conference, 32-33, 2000.
- T. Sato, S. Kasai and H. Hasegawa: Current Transport and Capacitance-Voltage
Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed
by in situ Electrochemical Process, Program and Abstracts of 10th International
Conference on Solid Films and Surfaces (ICSFS-10), MoB1520, 2000.
- S. Kasai, N. Negoro and H. Hasegawa: Conductance Gap Anomaly in Scanning
Tunneling Spectra of MBE Grown (001) Surfaces of III-V Compound Semiconductors,
Program and Abstracts of 10th International Conference on Solid Films
and Surfaces (ICSFS-10), MoP103, 2000.
- T. Yoshida, H. Hasegawa and T. Sakai: Realization of UHV-Compatible
Defect-=Free Hydrogen Terminated Silicon Surfaces with the Use of UHV
Contactless Capacitance-Voltage Method, Program and Abstracts of 10th
International Conference on Solid Films and Surfaces (ICSFS-10), MoB1120,
2000.
- T. Sato, S. Kasai and H. Hasegawa: Electrical Properties of Nanometer-Sized
Schottky Contacts for Gate Control of III-V Single Electron Devices,
Final Program and Collected Abstracts of the 2000 International Symposium
on Formation, Physics and Device Application of Quantum Dot Structures,
20, 2000.
- T. Muranaka, C. Jiang, A. Ito and H. Hasegawa: Effects of Atomic
Hydrogen Surface Cleaning on Selective MBE Growth of InP-based Quantum
Structure Arrays, Final Program and Collected Abstracts of the 2000
International Symposium on Formation, Physics and Device Application
of Quantum Dot Structures, 80, 2000.
- H. Hasegawa and S. Kasai: Prospects and Key Issues for Compound Semiconductor
Quantum Devices Technical Report of IEICE AWAD2000 issue, 43-48, 2000.
- H. Hasegawa: Single Electron Devices and Circuits Based on III-V
Semiconductors, Final Program and Collected Abstracts of the 2000 International
Symposium on Formation, Physics and Device Application of Quantum Dot
Structures, 16, 2000.
- S. Kasai and H. Hasegawa: GaAs Single Electron Transistors and Logic
Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and
Dots, Final Program and Collected Abstracts of the 2000 International
Symposium on Formation, Physics and Device Application of Quantum Dot
Structures, 24, 2000.
- Y. Kinoshita, T. Yamada, S. Kasai, Y. Amemiya and H. Hasegawa: Quantum-Dot
Logic Systems Based on the Shared Binary-Decision Diagram, Final Program
and Collected Abstracts of the 2000 International Symposium on Formation,
Physics and Device Application of Quantum Dot Structures, 124, 2000.
- H. Fujikura, A. Hirama, F. Ishikawa, H. Sai and H. Hasegawa: Identification
and Removal of Deep Levels in InGaP/GaAs Heterostructures Grown by TBP-Based,
Proceedings of the 2000 International Conference on Indium Phosphide
and Related Materials (IPRM2000), 372-375, 2000.
- H. Takahashi, M. Yamada and H. Hasegawa: Silicon Interlayer-Based
Oxide-Free Surface Passivation of InP and Its Application to MISFETs,
Proceedings of the 2000 International Conference on Indium Phosphide
and Related Materials (IPRM2000), 485-488, 2000.
- H. Fujikura, A. Liu, T. Sato, T. Hirano and H. Hasegawa: Self-Assembled
Formation of InP Nanopore Arrays by Electrochemical Anodization, Proceedings
of the 2000 International Conference on Indium Phosphide and Related
Materials (IPRM2000), 510-513, 2000.
- M. Iwaya, M. Yumoto. S. Kasai. and H. Hasegawa: Coupled Mode Propagation
in a Novel Coupled Quantum Wire Transistor Based on Schottky In-Plane
Gate Control of AlGaAs/GaAs Double Quantum Wells, Abstracts of 25th
International Conference on the Physics of Semiconductors, 300, 2000.
- N. Negoro, S. Kasai and H. Hasegawa: Space and Energy Distribution
of Surface Gap States on MBE-Grown and Silicon-Covered (001) GaAs Surfaces
Studied by Scanning Tunneling Spectroscopy, Abstracts of 25th International
Conference on the Physics of Semiconductors, 773, 2000.
- S. Kasai and H. Hasegawa: Gate Controlled Conductance Oscillations
in GaAs Schottky Wrap-Gate Single Electron Transistors, Abstracts of
25th International Conference on the Physics of Semiconductors, 981,
2000.
- R. Nakasaki, T. Hashizume, M. Kasai, S. Ootomo and H. Hasegawa: Surface
Passivation Process for GaN Based Electronic Devices Utilizing ECR-PCVD
Si3N4 Film, Final Program and Abstracts of Topical Workshop on Heterostructure
Microelectronics (TWHM'00), 44-45, 2000.
- Y. G. Xie, S. Kasai, Takahashi, C. Jiang and H. Hasegawa: Low Leakage,
High Breakdown Voltage and High Transconductance Insulated Gate PHEMTs
Utilizing Silicon Interface Control Layer, Final Program and Abstracts
of Topical Workshop on Heterostructure Microelectronics (TWHM'00), 24-25,
2000.
- H. Takahashi, M. Yamada, Y.G. Xie, S. Kasai and H. Hasegawa: Completely
Oxide-Free Insulated Gate Structure Having Silicon Interface Control
Layer for InP MISFETs, Final Program and Abstracts of Topical Workshop
on Heterostructure Microelectronics (TWHM'00), 26-27, 2000.
- H. Hasegawa, N. Negoro, S. Kasai and H. Fujikura: STM and STS Characterization
on MBE-Grown Clean Surfaces and Ultrahin Si Covered Surfaces of GaAs,
Abstracts of Symposium on Surface Physics' 2000, 11, 2000.
- S.Kasai, T.Sato, N.Negoro, H.Fujikura and H.Hasegawa: Control of
Metal-Semiconductor Interfaces and Semiconductor Surfaces for Compound
Semiconductor Quantum Devices, Proceedings of the Third SANKEN International
Symposium Advanced Nanoelectronics: Devices, Materials and Computing,
257-258, 2000.
- H. Hasegawa: Compound Semiconductor Logic and Memory Devices Based
on Novel Schottky Gate Technology, Collected Abstracts of the 2000 RCIQE
International Seminar on Physics and Technology of Semiconductor Nano-Devices
for the New Millennium, 490-494, 2000.
- T. Hashizume, S. Ootomo, R. Nakasaki, S. Oyama, J. Motohisa, H. Hasegawa
and M. Kihara: Characterization of AlGaN Surfaces and AlGaN/GaN Heterointerfaces
Grown by Metaloranic Vapor Phase Epitaxy, Workbook of the Tenth International
Conference on Metalorganic Vapor Phase Epitaxy, 276-277, 2000.
- T. Hashizume, R. Nakasaki, S. Ootomo, S. Oyama and H. Hasegawa: Surface
Characterization of GaN and AlGaN Layers Grown by MOVPE, Book of Abstracts
of 5th International Workshop on Expert Evaluation & Control of Compound
Semiconductor Materials & Technologies (EXMATEC 2000), O-070, 2000.
- T. Muranaka, C. Jiang, A. Ito and H. Hasegawa: Origin of Nonuniformity
in MBE Growth Nanometer-Sized InGaAs Ridge Quantum Wire and Its Removal
by Atomic Hydrogen-Assisted Cleaning, Final Book of Abstracts of the
International Conference on Electronic Materials & European Materials
Research Society Spring Meeting, F-18, 2000.
- H. Hasegawa: Microscopic Understanding and Control of Surfaces and
Interfaces of Compound Semiconductors for Mesoscopic Devices, Book of
Abstracts of US-Japan Seminar on Mesoscpic Phenomena on Surfaces (SMPS),
T1, 2000.
- H. Hasegawa, H. Takahashi, T. Yoshida, T. Hashizume and T. Sakai:
UHV-Based In-situ Characterization of Compound Semiconductor Surfaces
by a Contactless Capacitance-Voltage Technique, Book of Abstracts of
5th International Workshop on Expert Evaluation & Control of Compound
Semiconductor Materials & Technologies (EXMATEC 2000), O-071, 2000.
- H. Hasegawa: Prospects and Key Issues of Compound Semiconductor Nanoelectronics,
Abstracts of 24th Workshop on Compound Semiconductor Devices and Integrated
Circuits held in Europe (WOCSDICE 2000), XIII3-XIII4, 2000.
|
 |
|
