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Research
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Proceeding 91-120
1999-2002
- H. Hasegawa: Formation of III-V Compound Semiconductor Nanostructure
Arrays by Molecular Beam Epitaxy and Their Device Applications, Program
and Abstracts of Workshop on New Materials for Electronics at the Institute
of Electronic Materials Technology (ITME), Lecture 3, 2000.
- H. Hasegawa: Prospects of Compound Semiconductor Quantum Nanostructures
for Terahertz Generation, Amplification and Detection, Proceedings of
8th International Conference on Terahertz Electronics, 85-86, 2000.
- H. Hasegawa: Formation and Quantum Device Applications of III-V Compound
Semiconductor Nanostructures, Abstracts of 10th ISPSA on Emerging Materials & New
Functional Devices, 21-22, 2000.
- S. Kasai, Y. Amemiya and H. Hasegawa: GaAs Schottky Wrap-Gate Binary-Decision-Diagram
Devices for Realization of Novel Single Electron Logic Architecture,
Technical Digest of International Electron Devices Meeting 2000 (IEDM2000),
585-588, 2000.
- S. Ootomo, S. Oyama, T. Hashizume and H. Hasegawa: Properties of
As-grown, Chemically Treated and Thermally Oxidized Surfaces of AlGaN/GaN
Heterostructure, Proceedings of International Workshop on Nitride Semiconductors
(IWN2000), 934-937, 2000.
- H. Hasegawa, T. Sato and H. Okada: Formation of Fermi Level Pinning
Free Nano-scale Schottky Contacts on Compound Semiconductors and Their
Application to Single Electron Devices, Abstracts of Symposium on Surface
Physicsｹ99, 5-PL, 1999.
- K. Takahashi, H. Takahashi and H. Hasegawa: Surface Science Approach
for Characterization and Control of Semiconductor-Insulator Interfaces
of InP and Related Materials Having Ultrathin Silicon Interface Control
Layers, Abstracts of Symposium on Surface Physicsｹ99, 11-P, 1999.
- H. Hasegawa, T. Sato, C. Kaneshiro and Y. Koyama: Properties of Nanometer-Sized
Metal/Semiconductor Interfaces of GaAs, InP and GaN Formed by an In-Situ
Electrochemical Process, Abstracts of 26th Conference on the Physics
and Chemistry of Semiconductor Interfaces, Th1110, 1999.
- S. Ootomo, T. Hashizume and H. Hasegawa: Nitridation of GaP Surfaces
by Rf Nitrogen Radicals and by ECR Nitrogen Plasma, Extended Abstracts
of the 1999 International Conference on Solid State Devices and Materials,
66-67, 1999.
- M. Yamada, H. Takahashi, T. Hashizume and H. Hasegawa: Fabrication
and Characterization of Novel Oxide-Free InP MISFET Having and Ultra-Narrow
Si Surface Quantum Well, Extended Abstracts of the 1999 International
Conference on Solid State Devices and Materials, 436-437, 1999.
- A. Hirama, H. Sai, H. Fujikura and H. Hasegawa: Growth of High Quality
InGaP and Related Heterostructures by Gas-Source Molecular Beam Epitaxy
using Tertiary butyl-phosphine, Conference Proceedings of 11th International
Conference on Indium Phosphide and Related Materials, 551-554, 1999.
- T. Sato, H. Okada and H. Hasegawa: Formation of Nanometer-Sized Schottky
Contacts on InP and Related Materials by in situ Electrochemical Process,
Conference Proceedings of 11th International Conference on Indium Phosphide
and Related Materials, 233-236, 1999.
- A. Hamamatsu, C. Kaneshiro, T. Sato, H. Fujikura and H. Hasegawa:
Subnano-Scale Selective Etching and Nano-Scale Pore Array Formation
on InP(001) Surfaces by A Wet Electrochemical Process, Conference Proceedings
of 11th International Conference on Indium Phosphide and Related Materials,
503-506, 1999.
- S. Kasai, Y. Satoh and H. Hasegawa: GaAs Quantum Wire Transistors
and Single Electron Transistors Using Schottky Wrap Gates for Quantum
Integrated Circuits, Extended Abstracts of the 26th International Symposium
on Compound Semiconductors, MoB1-3, 1999.
- T. Muranaka, H. Fujikura and H. Hasegawa: Selective MBE Growth of
InGaAs Quantum Wire-Dot Coupled Structures for High Density Integration
of Single Electron Transistors, Extended Abstracts of the 26th International
Symposium on Compound Semiconductors, WeP-10, 1999.
- N. Negoro, H. Fujikura and H. Hasegawa: Microscopic Study of MBE
Growth of Ultrathin Si Interface Control Layers Grown on GaAs for Successful
Surface Passivation, Abstracts of The 3rd International Symposium on
Control of Semiconductor Interfaces, B1-8, 1999.
- S. Anantathanasarn, S. Ootomo, T. Hashizume and H. Hasegawa: Surface
Passivation of GaAs by Ultra-thin Cubic GaN Layer, Abstracts of The
3rd International Symposium on Control of Semiconductor Interfaces,
B4-4, 1999.
- T. Shiozawa, T. Yoshida, T. Hashizume and H. Hasegawa: Correlation
between interface state properties and electron transport at ultrathin
insulator/Si interfaces, Abstracts of The 3rd International Symposium
on Control of Semiconductor Interfaces, P2-3, 1999.
- T. Hashizume, R. Nakasaki and H. Hasegawa: Characterization of GaN
MIS Structures, Technical Program and Abstracts of 41st Electronic Materials
Conference, 29, 1999.
- C. Jiang, H. Fujikura, T. Muranaka and H. Hasegawa: Structural and
Alloy Composition Uniformity of InGaAs Ridge Quantum Wires Grown by
Selective MBE on Patterned InP Substrates, Technical Program and Abstracts
of 41st Electronic Materials Conference, 58- 59, 1999.
- T. Yoshida, H. Hasegawa and T. Sakai: UHV Contactless Capacitance-Voltage
Characterization of Free Silicon Surfaces, Technical Program and Abstracts
of 41st Electronic Materials Conference, 76, 1999.
- H. Hasegawa and T. Sato: Unpinning of Fermi Level in Nanometer-Sized
Schottky Contacts on GaAs and InP, Abstracts of 7th International Conference
on the Formation of Semiconductor Interfaces, 40, 1999.
- H. Takahashi and H. Hasegawa: In-situ UHV contactless capacitance-voltage
characterization of an InP passivation structure having an ultra-narrow
silicon surface quantum well, Abstracts of 7th International Conference
on the Formation of Semiconductor Interfaces, 134, 1999.
- T. Sato, S. Kasai, H. Okada and H. Hasegawa: Electrical Properties
of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in
situ Electrochemical Process, Abstracts of International Symposium on
Surface Science for Micro- and Nano-Device Fabrication, 10, 1999.
- A. Liu, A. Hamamatsu, T. Sato, H. Fujikura and H. Hasegawa: Electrochemical
Formation of Nanometer-Sized Straight Pore Arrays on (001) InP Surfaces,
Abstracts of International Symposium on Surface Science for Micro- and
Nano-Device Fabrication, 101, 1999.
- T. Yoshida, H. Hasegawa and T. Sakai: UHV Contactless Capacitance-Voltage
Characterization of Hydrogen Terminated Free Silicon Surfaces, Abstracts
of International Symposium on Surface Science for Micro- and Nano-Device
Fabrication, 113, 1999.
- D. V. Sokolov, H. Fujikura and H. Hasegawa: Scanned-Probe Nano-Scale
Oxidation and Etching of n-Type In0.53Ga0.47As, Abstracts of International
Symposium on Surface Science for Micro- and Nano-Device Fabrication,
45, 1999.
- M. Iwaya, S. Kasai, H. Okada, J. Nakamura and H. Hasegawa: Electrochemical
Formation of Schottky In-Plane Gate Structures for GaAs Single and Coupled
Quantum Wire Transistors, Abstracts of International Symposium on Surface
Science for Micro- and Nano-Device Fabrication, 62, 1999.
- H. Hasegawa: Key Surface Science Issues for Successful Passivation
of III-V Compound Semiconductor Surfaces Using Silicon Interface Control
Layers, Abstracts of International Symposium on Surface Science for
Micro- and Nano-Device Fabrication, 8, 1999.
- T. Hashizume and H. Hasegawa: A Novel Surface Passivation Structure
for III-V Compound Semiconductors Utilizing A Silicon Interface Control
Layer and Its Application, Abstracts of Material Research Society 1999
Spring Meeting, 394, 1999.
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