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Research
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Proceeding 1-30
1999-2002
- H. Hasegawa, S. Oyama, M. Konishi and T. Hashizume: Anomalous Current
Transport and Related Surface Traps in GaN Schottky Barriers, Extended
Abstracts of the 29th Conference on the Physics and Chemistry of Semiconductor
Interfaces, MO1110, 2002.
- H. Hasegawa: Compound Semiconductor Nano-devices and Circuits, Collected
Abstract of 2002 RCIQE Seminar "Quantum Nanostructures and Their Device
Applications", 19-33, 2002.
- H. Hasegawa, N. Negoro and Y. Nakano: Microscopic and Macroscopic
Study of Surface States on Clean and Si-Deposited GaAs (001) Surfaces,
Abstracts of Symposium on Surface Science 2002, 91-92, 2002.
- N. Negoro, S. Kasai and H. Hasegawa: Space and energy distribution
of surface gap states on MBE-grown and silicon-covered (001) GaAs surfaces
studied by scanning tunneling spectroscopy, 87 Springer Proceedings
in Physics ICPS-25 issue, Part 1, 441-442, 2001.
- M. Iwaya, M. Yumoto, S. Kasai and H. Hasegawa: Coupled mode propagation
in a novel coupled quantum wire transistor based on Schottky in-plane
gate control of AlGaAs/GaAs double quantum wells, Springer Proceedings
in Physics ICPS -25 issue, Part 1I, 1813-1814, 2001.
- S. Kasai and H. Hasegawa: Gated controlled conductance oscillations
in GaAs Schottky wrap-gate single electron transistors, Springer Proceedings
in Physics ICPS -25 issue, Part 1I, 1817-1818, 2001.
- T. Hashizume, S. Ootomo, S. Oyama, T. Yoshida and H. Hasegawa: Chemistry
and Electrical Properties of Surfaces of GaN and AlGaN/GaN Heterostructure,
Abstracts of The 28th Conference on the Physics and Chemistry of Semiconductor
Interfaces (PCSI-28), We1710, 2001.
- S. Anantathanasarn and H. Hasegawa: Novel Surface Passivation of
GaAs Using an Ultrathin Cubic GaN Interface Control Layer, Abstracts
of The 28th Conference on the Physics and Chemistry of Semiconductor
Interfaces (PCSI-28), MO0945, 2001.
- H. Hasegawa and S. Kasai: Compound Semiconductor Devices and Circuits
Based on Novel Schottky Gate Technology, Collected Abstracts of 2001
RCIQE International Seminar on "Advanced Semiconductor Devices and Circuits",
50-58, 2001.
- S. Oyama, T. Hashizume and H. Hasegawa: Mechanism of Current Leakage
through Metal/n-GaN Interfaces, Final Program and Collected Abstracts
of 8th International Conference on the Formation of Semiconductor Interfaces
(ICFSI-8), 280, 2001.
- S. Anantathanasarn and H. Hasegawa: Photoluminescence and Capacitance-Voltage
Characterization of GaAs Surface Passivated by an Ultrathin GaN Interface
Control Layer, Final Program and Collected Abstracts of 8th International
Conference on the Formation of Semiconductor Interfaces (ICFSI-8), 180,
2001.
- F. Ishikawa and H. Hasegawa: Cathodoluminescence Interface Spectroscopy
Characterization of InGaP/GaAs Heterointerfaces, Final Program and Collected
Abstracts of 8th International Conference on the Formation of Semiconductor
Interfaces (ICFSI-8), 160, 2001.
- A. Ito, T. Muranaka, C. Jiang and H. Hasegawa: Formation of High-Density
Honeycomb Networks of InGaAs Ridge Quantum Wires by Atomic Hydrogen
Assisted Selective MBE, Final Program and Collected Abstracts of 8th
International Conference on the Formation of Semiconductor Interfaces
(ICFSI-8), 98, 2001.
- M. Yumoto, S. Kasai and H. Hasegawa: Gate Control Properties of Nanometer-Scale
Schottky Wrap Gates for GaAs-based Quantum Structures, Final Program
and Collected Abstracts of 8th International Conference on the Formation
of Semiconductor Interfaces (ICFSI-8), 106, 2001.
- N. Negoro, S. Kasai and H. Hasegawa: Microscopic Study of Surface
States on Clean and Si-deposited GaAs (001) Surfaces by Bias-dependent
STM Topology and STS Spectra, Final Program and Collected Abstracts
of 8th International Conference on the Formation of Semiconductor Interfaces
(ICFSI-8), 154, 2001.
- Z. Fu, S. Kasai and H. Hasegawa: Gated Photoluminescence Study of
Oxide-Free InP MIS Structure Having an Ultrathin Silicon Interface Control
Layer, Final Program and Collected Abstracts of 8th International Conference
on the Formation of Semiconductor Interfaces (ICFSI-8), 216, 2001.
- S. Kasai and H. Hasegawa: III-V Quantum Devices and Circuits Based
on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks,
Final Program and Collected Abstracts of 8th International Conference
on the Formation of Semiconductor Interfaces (ICFSI-8), 8, 2001.
- Z. Jin, T. Hashizume and H. Hasegawa: Effects of Nitrogen Addition
on Methane-Based ECR Plasma Etching of GaN and Related Materials, Final
Program and Collected Abstracts of 8th International Conference on the
Formation of Semiconductor Interfaces (ICFSI-8), 278, 2001.
- N. Sakaguchi, M. B. Takeyama, A. Noya, T. Hashizume and H. Hasegawa:
Characterization of Cu-Hf Alloy Electrode for Realization of Ohmic Contact
to n-InP with Low Contact Resistance, Final Program and Collected Abstracts
of 8th International Conference on the Formation of Semiconductor Interfaces
(ICFSI-8), 242, 2001.
- M. Endo, Z. Jin, S. Kasai and H. Hasegawa: Reactive Ion Beam Etching
of GaN and AlGaN for Nanostructure Fabrication Using Methane-Based Gas
Mixtures, Extended Abstracts of the 2001 International Conference on
Solid State Devices and Materials, 320-321, 2001.
- Y. Nakano, N. Negoro and H. Hasegawa: Strong Photoluminescence and
Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces
of GaAs with (4x6) Reconstruction, Extended Abstracts of the 2001 International
Conference on Solid State Devices and Materials, 366-367, 2001.
- M. Yumoto, S. Kasai and H. Hasegawa: A Novel GaAs Binary Decision
Diagram Device Having Quantum Wire Branch-Switches Controlled by Wrap
Gates, Extended Abstracts of the 2001 International Conference on Solid
State Devices and Materials, 304-305, 2001.
- C. Jiang, T. Muranaka and H. Hasegawa: Structural and Optical Properties
of 10 nm-Class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches
Grown by Selective MBE on Patterned Substrate, Extended Abstracts of
the 2001 International Conference on Solid State Devices and Materials,
318-319, 2001.
- F. Ishikawa and H. Hasegawa: Non-destructive Characterization of
Heterointerfaces by Depth-Resolved Cathodoluminescence and its Application
to InGaP/GaAs interface, Proceedings of the 2001 International Conference
on Indium Phosphide and Related Materials (IPRM2001), 537-540, 2001.
- A.Ito, T. Muranaka, S. Kasai and H. Hasegawa: Atomic Hydrogen Assisted
Selective MBE Growth of InGaAs Ridge Quantum Wire Honeycomb Network
Structures for Binary-Decision Diagram Quantum LSIs, Proceedings of
the 2001 International Conference on Indium Phosphide and Related Materials
(IPRM2001), 521-524, 2001.
- Z. Fu, H. Takahashi, S. Kasai and H. Hasegawa: Optimization of Novel
Oxide-Free Insulated Gate Structure for InP Having An Ultrathin Silicon
Interface Control Layer, Proceedings of the 2001 International Conference
on Indium Phosphide and Related Materials (IPRM2001), 413-416, 2001.
- T. Hirano, A. Ito, T. Sato, F. Ishikawa and H. Hasegawa: Electrochemical
Formation of Self-Assembled Nanopore Arrays As Templates for MBE Growth
of InP-based Quantum Wires and Dots, Proceedings of the 2001 International
Conference on Indium Phosphide and Related Materials (IPRM2001), 378-381,
2001.
- C. Jiang, T. Muranaka and H. Hasegawa: Realization of Submicron-Pitch
Linear Arrays of Nanometer-Sized InGaAs Ridge Quantum Wires by Selective
MBE Growth on Patterned InP Substrates, Proceedings of the 2001 International
Conference on Indium Phosphide and Related Materials (IPRM2001), 374-377,
2001.
- R. Atsuchi, M. B. Takeyama, A. Noya, T. Hashizume and H. Hasegawa:
Formation and Characterization of AlxMo1-x/n-InP Alloy Electrode System
for Realization of Thermally Stable Ohmic Contacts, Proceedings of the
2001 International Conference on Indium Phosphide and Related Materials
(IPRM2001), 264-267, 2001.
- F. Ishikawa and H. Hasegawa: Contactless Characterization of Multi-Epitaxial
Wafer by Depth-Resolved Cathodoluminescence, Technical Program with
Abstracts of 2001 Electronics Materials Conference (EMC2001), 50-51,
2001.
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