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Research
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Proceeding 121-137
1999-2002
- H. Hasegawa and H. Okada: Compound Semiconductor Quantum Devices Based
on Schottky In-Plane Gate Structures, Abstract Book of the 3rd International
Conference on Low Dimensional Structures and Devices, OS03, 1999.
- H. Hasegawa: MBE-Based Compound Semiconductor Quantum Devices and
Their High Density Integration, Collected Abstracts of 1999 RCIQE International
Seminar on ｳPhysics and Technology of Compound Semiconductor Advanced
Devicesｲ, 24-40, 1999.
- H. Hasegawa: Present Status and Future Prospects of Single Electron
Devices, Extended Abstracts of The 18th Electronic Materials Symposium,
1-2, 1999.
- H. Hasegawa: MBE Growth and Applications of Interface Control Layers,
Abstracts of The 3rd International on Workshop MBE Growth, Physics and
Technology, WE-I/15, 1999.
- H. Hasegawa: Compound Semiconductor Logic and Memory Quantum Devices
Based on Novel Schottky Gate Technology, Program and Abstract of 3rd
Sweden-Japan International Workshop on Quantum Nanoelectronics, 32,
1999.
- H. Hasegawa: Prospect of Quantum Devices Based on III-V Compound
Semiconductors, Abstract Book of Advanced Workshop on Frontiers in Electronics,
108, 1999.
- Y. Satoh, T. Miyamoto, S. Kasai and H. Hasegawa: Conductance Oscillation
Characteristics of GaAs Schottky Wrap-Gate Single Electron Transistors,
Abstracts of Eleventh International Conference on Nonequilibrium Carrier
Dynamics in Semiconductors, 58, 1999.
- H. Okada and H. Hasegawa: Charge Control and Ballistic Transport
in GaAs Schottky In-Plane Gate Quantum Wire Transistors, Abstracts of
Eleventh International Conference on Nonequilibrium Carrier Dynamics
in Semiconductors, 65, 1999.
- H. Hasegawa: Advanced Mesoscopic Device Concepts and Technology,
Abstract Book of Micro-and-Nano-Engineering 99, 287, 1999.
- C. Jiang, T. Muranaka, H. Fujikura and H. Hasegawa: Vertical Barrier
Layer Formation during Selective MBE Growth of InGaAs Ridge Quantum
Wires on InP Patterned Substrates, Conference Digest of The 9th International
Conference on Modulated Semiconductor Structures, 255-256, 1999.
- H. Fujikura, T. Muranaka and H. Hasegawa: Formation of Device-Oriented
InGaAs Coupled Quantum Structures by Selective MBE Growth on Patterned
InP Substrates, Conference Digest of The 9th International Conference
on Modulated Semiconductor Structures, 108-109, 1999.
- R. Nakasaki, T. Hashizume and H. Hasegawa: Insulator-GaN Interface
Structures Formed by Plasma-Assisted Chemical Vapor Deposition, Conference
Digest of The 9th International Conference on Modulated Semiconductor
Structures, 51-52, 1999.
- T. Hashizume and H. Hasegawa: A Novel Surface Passivation Structure
for III-V Compound Semiconductors Utilizing Silicon Interface Control
Layer and Its Application, Mat. Res. Soc. Symp. Proc., 573, 45-56, 1999.
- T. Yoshida, H. Takahashi, T. Sakai, and H. Hasegawa: In-Situ Characterization
Technique of Surface Passivation of Si and Compound Semiconductors Based
on UHV Contactless Capacitance-Voltage Measurement, Abstracts of The
8th International Symposium on Passivity of Metals and Semiconductors,
169, 1999.
- H. Hasegawa: Present Status and Critical Issues of Surface Passivation
of Compound Semiconductors, Abstracts of The 8th International Symposium
on Passivity of Metals and Semiconductors, 161, 1999.
- H. Hasegawa: MBE Growth and Device Applications of III-V Compound
Semiconductor Nanowires, Proceedings of 1999 International Semiconductor
Device Research Symposium, 65-68, 1999.
- H. Hasegawa, T. Sato and S. Kasai: Properties of nanometer-sized
metal contacts on GaAs, InP and their related materials, Abstracts of
Surfaces and Interfaces of Mesoscopic Devices, 1, 1999.
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