 |
|
|
Research
Activity |
|
|
Proceeding 31-60
1999-2002
- N. Negoro and H. Hasegawa: Properties of Surface States on Clean and
Si-Deposited GaAs (001)-c(4x4) Surfaces Studied by Scanning Tunneling
Microscopy and Spectroscopy, Technical Program with Abstracts of 2001
Electronics Materials Conference (EMC2001), 50-51, 2001.
- S. Kasai and H. Hasegawa: Binary-Decision-Diagram Quantum Circuits
Based on Schottky Wrap Gate Control of GaAs Honeycomb Nanowires, Conference
Digest of 59th Device Research Conference, 131-132, 2001.
- F. Ishikawa and H. Hasegawa: Self-Consistent Computer Analysis of
Cathodoluminescence In-Depth Spectra for Compound Semiconductor Heterostructures,
Abstracts of 28th International Symposium on Compound Semiconductors
(ISCS2001), 146, 2001.
- M. Konishi, S. Anantathanasarn, T. Hashizume and H. Hasegawa: In-situ
XPS and Photoluminescence Characterization of GaN Surfaces Grown by
MBE on MOVPE GaN Templates, Abstracts of 28th International Symposium
on Compound Semiconductors (ISCS2001), 10, 2001.
- T. Sato, I. Tamai, C. Jiang and H. Hasegawa: Selective MBE Growth
of GaAs/AlGaAs Hexagonal Nanowire Network Structures on (001) Patterned
GaAs Substrates, Abstracts of 28th International Symposium on Compound
Semiconductors (ISCS2001), 120, 2001.
- A.Kameda, S. Kasai, T. Sato, and H. Hasegawa: Effects of Surface
States on Control Characteristics of Nanometer Scale Schottky Gates
Formed on GaAs, Proceedings of the 2001 International Semiconductor
Device Research Symposium, 626-629, 2001.
- S. Kasai, M. Yumoto and H. Hasegawa: Fabrication of GaAs-Based Integrated
2-bit Half and Full Adders by Novel Hexagonal BDD Quantum Circuit Approach,
Proceedings of the 2001 International Semiconductor Device Research
Symposium, 622-625, 2001.
- S. Kasai and H. Hasegawa: GaAs and InGaAs Single Electron Hexagonal
Nanowire Circuits Based on Binary Decision Diagram Logic Architecture,
Abstract Booklet of 10th International Conference on Modulated Semiconductor
Structures (MSS10), O66, 2001.
- T. Muranaka, S. Kasai, C. Jiang and H. Hasegawa: Growth of InGaAs
Ridge Quantum Wires Dots for Quantum LSIs by Atomic Hydrogen-Assisted
Selective MBE Growth on InP Substrates, Abstract Booklet of 10th International
Conference on Modulated Semiconductor Structures (MSS10), P160, 2001.
- H. Hasegawa, S. Kasai, M. Yumoto and T. Muranaka: Binary Decision
Diagram Quantum Logic Circuits Using Schottky In-Plane and Wrap Gate
Control of GaAs and InGaAs Nanowires, Abstracts Of Advanced Research
Workshop on Semiconductor Nanostructures, Qweenstown, 159-160, 2001.
- S. Kasai, M. Iwaya, M. Yumoto and H. Hasegawa: Quantum Transport
and Gate-Controlled Mode Hybridization in GaAs-based Schottky In-Plane
Gate Coupled Quantum Wire Transistors, Program and Abstracts of the
International Symposium on Carrier Interactions in Mesoscopic Systems,
18, 2001.
- S. Ootomo, T. Hashizume and H. Hasegawa: SURFACE PASSIVATION OF AlGaN/GaN
HETEROSTRUCTURES USING AN ULTRATHIN Al2O3 LAYER, Abstracts Book of the
Fourth International Conference on Nitride Semiconductors (ICNS4), 8,
2001.
- M. Yumoto, S. Kasai and H. Hasegawa: Novel Multi-Branch Quantum Wire
Switches for Graph-Based LSIs Utilizing Schottky Wrap Gate Control of
GaAs/AlGaAs Nanowires, Abstracts of Fifth International Symposium on
New Phenomena in Mesoscopic Structures, 58, 2001.
- C. Jiang, T. Muranaka, A. Ito, T. Sato and H. Hasegawa: MBE Growth
Mechanism and Controlled Formation of Dense Linear Arrays of Narrow
InGaAs Quantum Wires, Abstracts of Fifth International Symposium on
New Phenomena in Mesoscopic Structures, 59, 2001.
- H. Hasegawa: Quantum Devices and Integrated Circuits Based on Quantum
Confinement in III-V Nanowire Networks Controlled by Nano-Schottky Gates,
Quantum Confinement IV: Nanostructured Materials and Devices, ISBN1-56677-3520-0,
189-208, 2001.
- H. Hasegawa, A. Ito, C. Jiang and T. Muranaka: Atomic Hydrogen Assisted
Selective MBE Growth of InGaAs Linear and Hexagonal Nanowire Networks
for Novel Quantum Circuits, Abstracts of 4th International Workshop
on Novel index Surfaces (NIS'01), Tu20-9h50, 2001.
- H. Hasegawa: Present Status and Key Issues of Surface Passivation
of III-V Compound Semiconductors - from semi-classical device regime
to quantum device regime -, Program and Abstracts of 2nd International
Seminar on Semiconductor Surface Passivation (SSP' 2001), 19, 2001.
- M. Miczek, B. Adamowicz, T. Domagala, S. Arabasz and H. Hasegawa:
Genetic-Algorithm-Based Procedure for Rigorous Analysis of Photoluminescence
Efficiency Spectra of Semiconductor, Program and Abstracts of 2nd International
Seminar on Semiconductor Surface Passivation (SSP' 2001), 53, 2001.
- B. Adamowicz, M. Miczek and H. Hasegawa: Electronic Properties of
InP and AlGaAs Surfaces as Derived from Photoluminescence Efficiency
Spectra, Program and Abstracts of 2nd International Seminar on Semiconductor
Surface Passivation (SSP' 2001), 13, 2001.
- H. Hasegawa, S. Kasai: Hexagonal Binary Decision Diagram Quantum
Circuits on III-V Nanowire Networks - a Novel Approach toward Quantum
LSIs -, Abstracts of 25th Workshop on Compound Semiconductor Devices
and Integrated Circuits held in Europe (WOCSDICE 2001), 137-138, 2001.
- F. Ishikawa and H. Hasegawa: Non-Destructive Depth-Resolved Characterization
of InGaP/GaAs Multi-Layer Heteroepitaxial Wafers by Cathodeluminescence,
Abstracts of 25th Workshop on Compound Semiconductor Devices and Integrated
Circuits held in Europe (WOCSDICE 2001), 57-58, 2001.
- H. Hasegawa: A Novel Approach for High Density III-V Quantum Integrated
Circuits Operating Near Quantum Limit of Delay-Power Product (invited),
Abstracts of 1st U.S.-Korea-Japan Workshop on Nanostructures Science/Technology
(UKJ-WNST), session 3-4, 2001.
- H. Hasegawa: Hexagonal Binary Decision Diagram Quantum Circuits Using
III-V Non-Planar Quantum Wire Networks, Program and Abstracts of the
First International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics'01,
71-73, 2001.
- H. Hasegawa, N. Negoro, S. Kasai and H. Fujikura: Scanning Tunneling
Microscopy and Spectroscopy Study of (001)-Oriented Clean MBE Surfaces
and Ultrathin Si Layer Covered Surfaces of GaAs, Abstracts of 27th Conference
on the Physics and Chemistry of Semiconductor Interfaces, Mo1650, 2000.
- Z. Jin, T. Hashizume and H. Hasegawa: In-Situ XPS Study of Etch Chemistry
of Methane-Based RIBE of InP using N2, Extended Abstracts of the 2000
International Conference on Solid State Devices and Materials, 500-501,
2000.
- C. Jiang, T. Muranaka and H. Hasegawa: Ridge Uniformity Improvement
Toward Growth of Sub-10 nm InGaAs Ridge Quantum Wires by Selective MBE
on patterned InP Substrate, Extended Abstracts of the 2000 International
Conference on Solid State Devices and Materials, 328-329, 2000.
- H. Okada and H. Hasegawa: Novel Single Electron Memory Device Using
Metal Nano-Dots and Schottky In Plane Gate Quantum Wire, Extended Abstracts
of the 2000 International Conference on Solid State Devices and Materials,
312-313, 2000.
- F. Ishikawa, A. Hirama and H. Hasegawa: DLTS, PL and CL Study of
Dominant Deep Level and Its Removal in InGaP/GaAs Heterostructure Grown
by TBP-Based GSMBE, Extended Abstracts of the 2000 International Conference
on Solid State Devices and Materials, 526-527, 2000.
- T. Sato, S. Kasai and H. Hasegawa: Formation and Characterization
of Nanometer-Sized Schottky Contacts on III-V Materials by In-Situ Electrochemical
Process, Technical Program with Abstracts of 42nd 2000 Electronic Materials
Conference, 33, 2000.
- T. Hashizume, R. Nakasaki, S. Oyama and H. Hasegawa: Characterization
of native-oxide/GaN and SiNx/GaN interfaces, Technical Program with
Abstracts of 42nd 2000 Electronic Materials Conference, 10, 2000.
|
 |
|
