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Publication
** 2001 **
- Sanguan Anantathanasarn, Hideki Hasegawa, "Novel Surface Passivation of GaAs Using an Ultrathin Cubic GaN Interface Control Layer", Journal of Vacuum Science & Technology B, Vol.July/August 2001, pp. 1589-1596, (2001)
- T. Muranaka, C. Jiang, A. Ito and H. Hasegawa, "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE Growth of InGaAs Quantum Structure Arrays", Japanese Journal of Applied Physics Part 1, Vol.40, pp. 1874-1877, (2001)
- Hideki Hasegawa, Hiroshi Takahashi, Toshiyuki Yoshida and Takamasa Sakai, "Ultra High Vaccum-Based in situ Characterization of Compound Semiconductor Surfaces by a Contactless Capacitanc-Voltage Technique", Materials Science & Engineering B, Vol.80, pp. 147-151, (2001)
- T. Hashizume, R. Nakasaki, S. Ootomo, S. Oyama and H. Hasegawa, "Surface Characterization of GaN and AlGaN Layers Grown by MOVPE", Materials Science & Engineering B, Vol.80, pp. 309-312, (2001)
- Seiya Kasai, and H. Hasegawa, "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots", Japanese Journal of Applied Physics, Vol.40, pp. 2029-2032, (2001)
- Taketomo Sato, Seiya Kasai and Hideki Hasegawa, "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices", Japanese Journal of Applied Physics, Vol.40, pp. 2021-2025, (2001)
- S. Kasai, N. Negoro and H. Hasegawa, "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors ", Applied Surface Science , Vol.175/176, pp. 255-259, (2001)
- Zhi Jin, Tamotsu Hashizume and Hideki Hasegawa, "In Situ X-ray Photoelectron Spectroscopy Study of Etch Chemistry of Methane-Based Reactive Ion Beam Etching of InP using N2", Japanese Journal of Applied Physics Part 1, Vol.40, pp. 2757-2761, (2001)
- F. Ishikawa, and H. Hasegawa, "Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertialybutylphosphine-Based Gas Source Molecular Beam Epitaxy ", Japanese Journal of Applied Physics Part 1, Vol.40, pp. 2769-2774, (2001)
- H. Okada, and H. Hasegawa, "Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistor", Japanese Journal of Applied Physics Part 1, Vol.40, pp. 2797-2800, (2001)
- Chao Jiang, Tsutomu Muranaka and Hideki Hasegawa, "Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate", Japanese Journal of Applied Physics Part 1, Vol.40, pp. 3003-3008, (2001)
- Taketomo Sato, Seiya Kasai and Hideki Hasegawa, "Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process", Applied Surface Science, Vol.175-176, pp. 181-186, (2001)
- Seiya Kasai, Noboru Negoro and Hideki Hasegawa, "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semicondcutors", Applied Surface Science, Vol.175-176, pp. 255-259, (2001)
- Toshiyuki Yoshida, and Hideki Hasegawa, "Realization of Ultrahigh-Vacuum Compatible Defect-Free Hydrogen Terminated Silicon Surfaces with the Use of a UHV Contactless Capacitance-Voltage Method", Applied Surface Science, Vol.175-176, pp. 163-168, (2001)
- M. Miczek, B. Adamowicz, J. Szuber and H. Hasegawa, "Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum", Vacuum, Vol.63, pp. 223-227, (2001)
- T. Yamada, Y. Kinoshita, S. Kasai, H. Hasegawa and Y. Amemiya, "Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram ", Japanese Journal of Applied Physics Part 1, Vol.40, pp. 4485-4488, (2001)
- Y. G. Xie, S. Kasai, H. Takahashi, C. Jiang and H. Hasegawa, "A Novel InGaAs/InAlAs Insulated Gate Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC- and RF-Performance ", IEEE Electron Device Letter, Vol.22, pp. 312-314, (2001)
- T. Hashizume, S. Ootomo, S. Oyama, M. Konishi and H. Hasegawa, "Chemistry and Electrical Properties of Surfaces of GaN and AlGaN/GaN Heterostructures", Journal of Vacuum Science and Technology B, Vol.19, pp. 1675-1681, (2001)
- H. Hasegawa, and S. Kasai, "Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires ", Physica E, Vol.13, pp. 149-154, (2001)
- Y.-G. Xie, S. Kasai, H. Takahashi, C. Jiang and H. Hasegawa, "Fabrication and characterization of InGaAs/InAlAs insulated gate pseudomorphic HEMTs having a silicon interface control layer ", IEICE Trans. Electron., Vol.E84-C, pp. 1335-1343, (2001)
- T. Hashizume, R. Nakasaki, S. Ootomo, S. Oyama, and H. Hasegawa, "Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiNx Film
", IEICE Trans. Electron., Vol.E84-C, pp. 1455-1461, (2001)
- H. Takahashi, M. Yamada, Y.G. Xie, S. Kasai and H. Hasegawa, "Process Characterization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer", IEICE Trans. Electron., Vol.E84-C, pp. 1344-1349, (2001)
- S. Ootomo, T. Hashizume and H. Hasegawa, "Surface Passivation of AlGaN/GaN Heterostructures Using an Ultrathin Al2O3 Layer", Physica Status Solidi (a), Vol.188, pp. 371-374, (2001)
- H. Hasegawa "Formation and Quantum Devices Applications of III-V Compound Semiconductor Nanostructures", Journal of the Korean Physical Society, Vol.39, pp. S402-S409, (2001)
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