Research activity of the MBE Electronics Group is based on the advanced semiconductor nanotechnology utilizing molecular beam epitaxy (MBE) crystal growth and a unique UHV (ultra-high vacuum)-based multi-chamber system. Research targets include formation of III-V semiconductor-based high density quantum nanostructures, characterization and control of their surfaces and interfaces, creation of new devices and their system applications.Particularly, these achievements are currently being integrated under the 21st Century COE program for realization of an ultra-small knowledge vehicle called IQ (intelligent quantum) chip for the future ubiquitous society which include ultra-high speed and ultra-low power consumption quantum LSIs, high performance sensors and high speed and low-power communication devices.

Keywords:
Molecular Beam Epitaxy (MBE), III-V compound semiconductors, GaN and related materials, ultra-high vacuum (UHV)-based process, quantum nanostructure formation, nano-surface/interface physics, quantum nanodevices and their integration, ultra-high speed communication devices, IQ (intelligent quantum) chip