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Publication 31-60
1999-2002
- S. Kasai and H. Hasegawa: GaAs-Based Single Electron Transistors and
Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires
and Dots, Japanese Journal of Applied Physics, 40(3B), 2029-2032, 2001.
- R. Nakasaki, T. Hashizume and H. Hasegawa: Insulator-GaN Interface
Structures Formed by Plasma-Assisted Chemical Vapor Deposition, Physica
E, 7(3-4), 953-957, 2000.
- B. Adamowicz, M. Miczek and H. Hasegawa: COMPUTER ANALYSIS OF THE
FERMI LEVEL BEHAVIOR AT SiO2/n-GaAs INTERFACES, Electron Technology,
33, 249-252, 2000.
- B. Adamowicz and H. Hasegawa: Computer analysis of photon-induced
non-equilibrium phenomena at Si and AlGaAs surfaces, Vacuum, 57(2),
111-120, 2000.
- B. Adamowicz and H. Hasegawa: Analysis of photoluminescence efficiency
and surface recombination velocity of MBE-grown AlGaAs layers, Thin
Solid Films, 367(1-2), 180-183, 2000.
- T. Muranaka, C. Jiang, A. Ito and H. Hasegawa: Origin of Non-Uniformity
in MBE Grown Nanometer-Sized InGaAs Ridge Quantum Wires and Its Removal
by Atomic Hydrogen-Assisted Cleaning, Thin Solid Films, 380 (1-2), 189-191,
2000.
- S. Kasai, Y. Satoh and H. Hasegawa: GaAs Quantum Wire Transistors
and Single Electron Transistors using Schottky Wrap Gates for Quantum
Integrated Circuits, Inst. Phys. Conf. Ser., 166, 219-222, 2000.
- T. Muranaka H. Fujikura and H. Hasegawa: Selective MBE Growth of
InGaAs Quantum Wire-Dot Coupled Structures with Controlled Double-Barrier
Potential Profiles, Inst. Phys. Conf. Ser., 166, 187-190, 2000.
- S. Ootomo, T. Hashizume and H. Hasegawa: Nitridation of GaP (100)
Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance
Nitrogen Plasma, Jpn. J. Appl. Phys., 39(4B), 2407-2413, 2000.
- M. Yamada, H. Takahashi, T. Hashizume and H. Hasegawa: Fabrication
and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor
FETs Having an Ultra Narrow Si Surface Quantum Well, Jpn. J. Appl. Phys.,
39(4B), 2439-2443, 2000.
- T. Sato, S. Kasai, H. Okada and H. Hasegawa: Electrical Properties
of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in
Situ Electrochemical Process, Jpn. J. Appl. Phys., 39(7B), 4609-4615,
2000(
- T. Yoshida and H. Hasegawa: Ultrahigh-Vacuum Contactless Capacitance-Voltage
Characterization of Hydrogen Terminated-Free Silicon Surfaces, Jpn.
J. Appl. Phys., 39(7B), 4504-4508, 2000.
- H. Fujikura, A. Liu, A. Hamamatsu, T. Sato and H. Hasegawa: Electrochemical
Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces
and Their Photoluminescence Characterizations, Jpn. J. Appl. Phys.,
39(7B), 4616-4620, 2000.
- M. Iwaya, S. Kasai, H. Okada, J. Nakamura and H. Hasegawa: Chemical
and Electrochemical Nanofabrication Processes for Schottky In-Plane
Gate GaAs Single and Coupled Quantum Wire Transistors, Jpn. J. Appl.
Phys., 39(7B), 4651-4652, 2000.
- H. Hasegawa, N. Negoro, S. Kasai, Y. Ishikawa and H. Fujikura: Effects
of gap states on scanning tunneling spectra observed on (110)- and (001)-oriented
clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared
by molecular beam epitaxy, Journal of Vacuum Science & Technology B,
18(4), 2100-2108, 2000.
- ◎3H. Hasegawa: Microscopic understanding and control of surfaces
and interfaces of compound semiconductors for mesoscopic devices, Surface
Review and Letters, 7(5-6), 583-588, 2000.
- H. Hasegawa: MBE growth and applications of silicon interface control
layers, Thin Solid Films, 367(1-2), 58-67, 2000.
- T. Shiozawa, T. Yoshida, T. Hashizume and H. Hasegawa: Correlation
between interface state properties and electron transport at ultrathin
insulator/Si interfaces, Applied Surface Science, 159/160, 98-103, 2000.
- S. Anantathanasarn, S. Ootomo, T. Hashizume and H. Hasegawa: Surface
passivation of GaAs by ultra-thin cubic GaN layer, Applied Surface Science,
159/160, 456-461, 2000.
- N. Negoro, H. Fujikura and H. Hasegawa: Scanning tunneling microscopy
and spectroscopy study of ultrathin Si interface control layers grown
on (001) GaAs for surface passivation, Applied Surface Science, 159/160,
292-300, 2000.
- H. Takahashi and H. Hasegawa: in situ UHV contactless C-V and XPS
characterization of surface passivation process for InP using a partially
nitrided Si interface control layer, Applied Surface Science, 166(1-4),
526-531, 2000.
- H. Hasegawa, T. Sato and S. Kasai: Unpinning of Fermi level in nanometer-sized
Schottky contacts on GaAs and InP, Applied Surface Science, 166(1-4),
92-96, 2000.
- H. Hasegawa: Advanced mesoscopic device concepts and technology,
Microelectronic Engineering, 53(1-4), 29-36, 2000.
- C. Jiang, H. Fujikura and H. Hasegawa: Vertical barrier layer formation
during selective MBE growth of InGaAs ridge quantum wires on InP patterned
substrates, Physica E, 7(3-4), 902-906, 2000.
- H. Fujikura, T. Muranaka and H. Hasegawa: Formation of device-oriented
InGaAs coupled quantum structures by selective MBE growth on patterned
InP substrates, Physica E, 7(3-4), 864-869, 2000.
- B. Adamowicz, M. Miczek, K. Ikeya, M. Mutoh, T. Saitoh, H. Fujikura
and H. Hasegawa: Electronic Properties of AlxGa1-xAs Surface Passivated
by Ultrathin Silicon Interface Control Layer, Applied Surface Science,
141(3-4), 326-332, 1999.
- S. Kasai, Y. Satoh and H. Hasegawa: Conductance oscillation characteristics
of GaAs Schottky wrap-gate single-electron transistors, Physica B, 272(1-4),
88-91, 1999.
- H. Okada and H. Hasegawa: Characterization of GaAs Schottky in-plane
gate quantum wire transistors for switching of quantized conductance,
Physica B, 272(1-4), 123-126, 1999.
- ◎5H. Hasegawa, T. Sato and C. Kaneshiro: Properties of nanometer-sized
metal-semiconductor interfaces of GaAs and InP formed by an in situ
electrochemical process, Journal of Vacuum Science and Technology B,
17(4), 1856-1866, 1999.
- B. Adamowicz and H. Hasegawa: Computer Simulation of the Surface
Photovoltage on Si and GaAs Surfaces with U-shaped Surface State Continuum,
Vacuum, 54(1-4), 173-177, 1999.
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