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 Research Center For Integrated Quantum Electronics, Hokkaido University
       
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Publication
** 1999 **
  1. H. Sai, H.Fujikura and H.Hasegawa, "Gas Source Molecular Beam Epitaxial Growth of In1-xGaxP on GaAs Using Tertiarybutylphosphine", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 151-158, (1999)
  2. H. Fujikura, Y. Hanada, T. Muranaka and H. Hasegawa, "Control of Dot Size and Tunneling Barrier Profile in In0.53Ga0.47As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 421-424, (1999)
  3. Y. Satoh, H. Okada, K. Jinushi, H. Fujikura and H. Hasegawa, "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Gates", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 410-414, (1999)
  4. C. Kaneshiro, T. Sato and H. Hasegawa, "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 1147-1152, (1999)
  5. H. Fujikura, M. Kihara and H. Hasegawa, "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 1067-1070, (1999)
  6. M. B. Takeyama, A. Noya, T. Hashizume and H. Hasegawa, "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 1115-1118, (1999)
  7. Hideki Hasegawa, Yuji Koyama and Tamotsu Hashizume, "Fermi Level Pinning and Schottky Barrier Height Control at Metal-Semiconductor Interfaces of InP and Related Materials", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 1098-1102, (1999)
  8. T. Muranaka, H. Okada, H. Fujikura and H. Hasegawa, "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 1071-1074, (1999)
  9. T. Sato, C. Kaneshiro and H. Hasegawa, "The Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 1103-1106, (1999)
  10. H. Sai, H.Fujikura and H.Hasegawa, "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In0.48Ga0.52P on GaAs", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 824-831, (1999)
  11. H. Takahashi, T. Hashizume and H. Hasegawa, "X-ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 1128-1132, (1999)
  12. B. Adamowicz, M. Miczek, K. Ikeya, M. Mutoh, T. Saitoh, H. Fujikura and H. Hasegawa, "Electronic Properties of AlxGa1-xAs Surface Passivated by Ultrathin Silicon Interface Control Layer", Applied Surface Science, Vol.141, pp. 326-332, (1999)
  13. H. Fujikura, T. Muranaka and H. Hasegawa, "Selective Growth of Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays", Microelectronics, Vol.30, pp. 397-401, (1999)
  14. M. Mutoh, N. Tsurumi and H. Hasegawa, "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 2538-2543, (1999)
  15. T. Yoshida, H. Hasegawa and T. Sakai, "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 2349-2354, (1999)
  16. H. Hasegawa, Y. Koyama and T. Hashizume, "Properties of Metal-Semiconductor Interfaces Formed on n-Type GaN", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 2634-2639, (1999)
  17. T. Sato, C. Kaneshiro, H. Okada and H. Hasegawa, "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 2448-2452, (1999)
  18. J. Nakamura, T. Kudoh, H. Okada and H. Hasegawa, "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors", Inst. Phys. Conf. Ser., Vol.162, pp. 409-414, (1999)
  19. N. Ono, H. Fujikura and H. Hasegawa, "Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires", Inst. Phys. Conf. Ser., Vol.162, pp. 385-390, (1999)
  20. C. Kaneshiro, T. Sato and H. Hasegawa, "Realization of Strongly Metal-Dependent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process", Inst. Phys. Conf. Ser., Vol.162, pp. 585-590, (1999)
  21. T. Muranaka, H. Okada, H. Fujikura and H. Hasegawa, "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE", Microelectronic Engineering, Vol.47, pp. 201-203, (1999)
  22. H. Okada, T. Sato, K. Jinushi and H. Hasegawa, "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates", Microelectronic Engineering, Vol.47, pp. 285-287, (1999)
  23. H.Hasegawa, T.Sato and C.Kaneshiro, "Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process", Journal of Vacuum Science and Technology B, Vol.17, pp. 1856-1866, (1999)
  24. H. Sai, H.Fujikura, A. Hirama and H.Hasegawa, "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine", Solid State Electronics, Vol.43, pp. 1541-1546, (1999)
  25. Hiroshi Takahashi, Toshiyuki Yoshida, Morimichi Mutoh, Takamasa Sakai and Hideki Hasegawa, "In-situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement", Solid State Electronics, Vol.43, pp. 1561-1570, (1999)
  26. Yuji Koyama, Tamotsu Hashizume and Hideki Hasegawa, "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications", Solid State Electronics, Vol.43, pp. 1483-1488, (1999)
  27. H.Hasegawa, H.Fujikura and H.Okada, "Molecular Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires", MRS Bulletin, Vol.24, pp. 25-30, (1999)
  28. Hamamatsu, C. Kaneshiro, H.Fujikura and H. Hasegawa, "Formation of <001>-Aligned Nano-Scale Pores on (001) n-InP Surfaces by Photoelectrochemical Anodization in HCl", J. Electroanalytical Chem., Vol.473, pp. 223-229, (1999)
  29. Sanguan Anantathanasarn, Shinya Ootomo, Tamotsu Hashizume and Hideki Hasegawa, "Surface passivation of GaAs by ultra-thin cubic GaN layer", Applied Surface Science, Vol.-2000, pp. 456-461, (1999)
  30. H.Okada, and H.Hasegawa, "Characterization of GaAs Schottky in-plane gate quantum wire transistors for switching of quantized conductance", Physica B, Vol.272, pp. 123-126, (1999)
  31. S.Kasai, Y.Satoh and H.Hasegawa, "Conductance oscillation characteristics of GaAs Schottky wrap-gate single-electron transistors", Physica B, Vol.272, pp. 88-91, (1999)
  32. T. Hashizume, and H. Hasegawa, "A Novel Surface Passivation Structure for III-V Compound Semiconductors Utilizing Silicon Interface Control Layer and Its Application", Mat. Res. Soc. Symp. Proc., Vol.573, pp. 45-56, (1999)

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