国際会議における講演：45件
(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1703) T. Shimada, M. Ikebe, P. Ambalathankandy, M. Motomura, and T. Asai: ” Sparse Disparity Estimation Using Global Phase Only Correlation for Stereo Matching Acceleration,”2018 IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP2018), Calgary, Canada, Apr. 15 – 20 (2018).

2.(1704) T. Sato and M. Toguchi: ” Precisely-controlled etching of gallium nitride utilizing electrochemical reactions (invited), “Nanotech Malaysia 2018, Kuala Lumpur, Malaysia, May 7 – 8 (2018).

3.(1705) S. Kasai: ” Electronic Representation of Nature-inspired Functions for Nano-scale Electronic Systems (invited), “Nanotech Malaysia 2018, Kuala Lumpur, Malaysia, May 7 – 8 (2018).

4.(1706) M. Toguchi, S. Matsumoto, and T. Sato: ” Control of Pore Depth in GaN Porous Structures Utilizing a Photoabsorption Process Under below-Bandgap Illumination,”233rd ECS Meeting, Seattle Sheraton and Washington State Convention Center, Seattle, USA, May 13 – 17, (2018).

5.(1707) K. Saito, N. Suefuji, S. Kasai, and M. Aono:”Amoeba-inspired electronic solutionsearching system and its application to finding walking maneuver of a multi-legged robot, “2018 IEEE 48th International Symposium on Multiple-Valued Logic, Linz, Austria, May 16 – 18 (2018).

6.(1708) M. Yoshioka and S. Hara: ” Construction of an In-House Paper/Figure Database System using Potable Document Format Files,”the 12th InternationalWorkshop on Information Search, Integration, and Personalization (ISIP 2018), Fukuoka, Japan, May 14 – 15 (2018).

7.(1709) K. Tomioka, H. Gamou, A. Yoshida, and J. Motohisa: ” Scaling Effect on Vertical FETs using III-V Nanowire-Channels,”Compound SemiconductorWeek 2019 (CSW 2019), Cambridge, USA, May 29 – June 1 (2018).

8.(1710) M. Akazawa, N. Yokota, and K. Uetake: ” Thermal behavior of defects generated in GaN by low-dose Mg-ion implantation, “Compound Semiconductor Week 2019 (CSW 2019), Cambridge, USA, May 29 – June 1 (2018).

9.(1711) R. Kodaira, R. Horiguchi, and S. Hara: ” Magnetization Characterization of Two MnAs Nanoclusters at Close Range in MnAs/InAs Heterojunction Nanowires, “the 19th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPEXIX), Nara, Japan, June 3 – 8 (2018).

10.(1712) R. Horiguchi, M. Iida, K. Morita, and S. Hara: ” Analyses of Magnetic Domains in MnAs Nanoclusters Grown by Selective-Area MOVPE, “the 19th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3 – 8 (2018).

11.(1713) M. Sasaki, K. Chiba, A. Yoshida, K. Tomioka, and J. Motohisa:”Size Control of InP NWs by in situ Thermal Annealing in MOVPE,”the 19th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3 -8 (2018).

12.(1714) Y. Minami, A. Yoshida, K. Tomioka, and J. Motohisa:”Growth and characterization of GaAs nanowires on Ge(111) substrates by selective-area MOVPE, ” the 19th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3 – 8 (2018).

13.(1715) J. Motohisa, H. Kameda, M. Sasaki, and K. Tomioka:”Characterization of Nanowire Light-emitting Diodes Grown by Selective-area MOVPE, ” the 19th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3 – 8 (2018).

14.(1716) A. Yoshida, K. Tomioka, K. Chiba, and J. Motohisa:” Heterogeneous integration of InGaAs nanowires with various In compositions on Ge(111) substrates for vertical transistor application, “the 19th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3 – 8 (2018).

15.(1717) K. Tomioka, A. Yoshida, and J. Motohisa: ” Shallow and heavy doping of Ge by MOVPE, “the 19th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3 – 8 (2018).

16.(1718) H. Gamou, K. Tomioka, A. Yoshida, and J. Motohisa: ” Selective-area growth of pulse-doped InAs related nanowire-channels on Si, “the 19th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3 – 8 (2018).

17.(1719) K. Tomioka and J. Motohisa: ” Characterization of GaAs-InGaP core-multishell nanowires on Si by selective-area MOVPE, “the 19th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3 – 8 (2018).

18.(1720) K. Tomioka, A. Yoshida, F. Ishizaka, and J. Motohisa:”Vertical GaAs-InGaP coreshell nanowires on Si by selective-area growth, ” Nanowire Week 2018, Hamilton, Canada, June 11 – 15 (2018).

19.(1721) H. Gamo, K. Tomioka, A. Yoshida, and J. Motohisa: ” Vertical FETs using pulsedoped InAs nanowires on Si, “Nanowire Week 2018, Hamilton, Canada, June 11 -15 (2018).

20.(1722) J. Motohisa, H. Kameda, M. Sasaki, and K. Tomioka: ” Study on emission mechanism in InP-based nanowire LEDs,”Nanowire Week 2018, Hamilton, Canada, June 11 – 15 (2018).

21.(1723) M. Matys, K. Nishiguchi, B. Adamowicz, and T. Hashizume:”Nature of oxide/III-N defects: Disorder induced gap state continuum vs. border traps,”34th International Conference on the Semiconductor Physics (ICPS-2018), Montpellier, France, July 29 – Aug. 3 (2018).

22.(1724) S. Hara, M. T. Elm, and P. J. Klar: ” Selective-Area Growth and Transport Characterization of Vertical MnAs/InAs Heterojunction Nanowires (invited), “the 10th International Conference on Processing and Manufacturing of Advanced Materials (THERMEC 2018), Paris, France, July 8 – 13 (2018).

23.(1725) T. Sato and M. Toguchi: ” Electrochemical Formation and Application of Porous Gallium Nitride (invited),”Americas International Meeting on Electrochemistry and Solid State Science (AiMES 2018), Moon Palace Resort, Cancun, Mexico, September 30 – October 4 (2018).

24.(1726) K. Inada, K. Tajima, and S. Kasai: ” User-adaptive Surface Myoelectric Signal Detection System Using Nonlinear Device Network, ” 2018 International Symposium on Nonlinear Theory and Its Applications (NOLTA 2018), Tarragona, Spain, September 2 – 6 (2018).

25.(1727) P. Uredat, R. Kodaira, R. Horiguchi, S. Hara, P. J. Klar, and M. T. Elm: ” Determing the Carrier Mobility in Single InAs Nanowires from Magnetotransport Measurements,” the 2018 International Conference on Solid State Devices and Materials (SSDM 2018), Tokyo, Japan, September 9 – 13 (2018).

26.(1728) J. Motohisa, H. Kameda, M. Sasaki, and K. Tomioka: ” Electroluminescence from InP-based Heterostructure Nanowiress,”the 2018 International Conference on Solid State Devices and Materials (SSDM 2018), Tokyo, Japan, September 9 – 13 (2018).

27.(1729) A. Yoshida, K. Tomioka, and J. Motohisa: ” InGaAs nanowire/Ge heterojunction Esaki tunnel diodes, “the 2018 International Conference on Solid State Devices and Materials (SSDM 2018), Tokyo, Japan, September 9 – 13 (2018).

28.(1730) S. Yokoyama, Y. Kanazawa, T. Ikegami, S. Hiramatsu, E. Sano, Y. Takida, P. Ambalathankandy, H. Minamide, and M. Ikebe: ” CMOS terahertz imaging pixel with a VCO-based ADC,”the 2018 International Conference on Solid State Devices and Materials (SSDM 2018), Tokyo, Japan, September 9 – 13 (2018).

29.(1731) T. Kudo, K. Ueyoshi, K. Ando, K. Hirose, R. Uematsu, Y. Oba, M. Ikebe, T. Asai, M. Motomura, and S. Takamaeda-Yamazaki:”Area and energy optimization for bitserial log-quantized DNN Accelerator with shared accumulators, “IEEE 12th International Symposium on Embedded Multicore/Many-core Systems-on-Chip, Hanoi, Vietnam, Sep. 12 – 14 (2018).

30.(1732) Y. Kanazawa, E. Sano, S. Yokoyama, P. Ambalathankandy, M. Ikebe, S. Hirmatsu, Y. Takida, and H. Minamide: ” CMOS Terahertz Imaging Pixel with a Wideband on-Chip Antenna,”2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Nagoya, Japan, Sept. 9 – 14 (2018).

31.(1733) M. Akazawa, K. Uetake, and R. Kamoshida: ” Investigation of Lightly Mg-Ion-Implanted GaN Using MOS Structure (invited),”JSAP and KPS Joint Symposium – Wide Bandgap Semiconductor Devices -, Nagoya, Japan, Sept. 19 (2018).

32.(1734) K. Uemura, M. Deki, Y. Honda, H. Amano, and T. Sato: ” Recessed-gate AlGaN/GaN High Electron Mobility Transistors (HEMTs) Prepared by Photo-electrochemical Etching and Post-metallization Annealing,”JSAP and KPS Joint Symposium – Wide Bandgap Semiconductor Devices -, Nagoya, Japan, Sept. 19 (2018).

33.(1735) T. Kaneko, M. Ikebe, S. Takamaeda-Yamazaki, M. Motomura, and T. Asai: ” A study on ternary back propagation algorithm for embedded egde-AI processing, “Joint workshop of UCL-ICN, NTT, UCL-Gatsby and AIBS: Analysis and Synthesis for Human/Artificial Cognition and Behaviour, Okinawa, Japan, Oct. 22 – 23 (2018).

34.(1736) S. Kitajima and M. Akazawa: ” Control of SiO2/InAlN Interface Using Sub-nm-Thick Al2O3 Interlayer, ” the 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with the 26th International Colloquium on Scanning Probe Microscopy (ICSPM26) , Sendai, Japan, October 21 – 25 (2018).

35.(1737) K. Isobe and M. Akazawa:”Investigation of Surface Pretreatment for Schottky Contacts on n-GaN on GaN Substrate, “the 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with the 26th International Colloquium on Scanning Probe Microscopy (ICSPM26), Sendai, Japan, October 21 – 25 (2018).

36.(1738) S. Kasai:” Stochastic resonance in electron devices and its application (invited), “ACSIN 2018 Informal Satellite Workshop Material Intelligence -Unconventional Computing by Network-based Materials-, Iwanuma, Japan, Oct. 25 – 26 (2018).

37.(1739) K. Uemura, Y. Komatsu, and T. Sato: ” Precise thickness control in recess-etching for normally-off AlGaN/GaN HEMTs using a photo-electrochemical reaction,”HUSNU Joint Symposium, Hokkaido University, Sapporo, Japan, November 9 (2018).

38.(1740) T. Sato:”Fabrication of GaN Porous Nanostructures utilizing Electrochemical Reactions,”HU-SNU Joint Symposium, Hokkaido University, Sapporo, Japan, November 9 (2018).

39.(1741) T. Sato: ” Low-damage Etching for GaN-based Electronic Devices utilizing Photoelectrochemical Reactions (invited),”4th Intensive Discussion on Growth of Nitride Semiconductors, Sendai, Japan, November 18 – 20 (2018).

40.(1742) K. Uemura, M. Deki, Y. Honda, H. Amano, and T. Sato: ” Effect of Photoelectrochemical Etching and Post-metallization Annealing on Gate-controllability of AlGaN/GaN High Electron Mobility Transistors, “International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, November 11 – 16 (2018).

41.(1743) S. Kaneki and T. Hashizume: ” Control of Al2O3 MOS Interfaces Fabricated on m-plane GaN Surfaces, ” International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, November 11 – 16 (2018).

42.(1744) Y. Ando, S. Kaneki, and T. Hashizume: ” Gate controllability in Al2O3-gate AlGaN/GaN HEMTs grown on GaN substrates, “International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, November 11 – 16 (2018).

43.(1745) T. Oyobiki and T. Hashizume: ” Characterization of Al2O3 MOS structures fabricated on high-temperature annealed GaN surfaces, “International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, November 11 – 16 (2018).

44.(1746) M. Matys, K. Nishiguchi, B. Adamowicz, J. Kuzm´ık, and T. Hashizume: ” Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors, “International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, November 11 – 16 (2018).

45.(1747) M. ˇTapajna, J. Drobn´y, F. Gucmann, K. Huˇsekov´a, T. Hashizume, and J. Kuzm´ık:”Impact of oxide/barrier fixed charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, ” International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, November 11 – 16 (2018).

46.(1748) Y. Yamamoto, M. Shimauchi, and J. Motohisa:”Electrical characterization of selectively grown GaN nanowires, “International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, November 11 – 16 (2018).

47.(1749) K. Uetake, R. Kamoshida and M. Akazawa: ” Investigation of Effect of Low-Temperature Annealing and Dosage on Mg-Ion-Implanted GaN Using MOS Structure,”InternationalWorkshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, November 11 – 16 (2018).

48.(1750) K. Sasaki, S. Okamoto, S. Tashiro, T. Asai, and S. Kasai:”Charge Coupling between Polyoxometalate Molecule and a GaAs-Based Nanowire for Readout of Molecular Multiple Charge State, ” 31st International Microprocesses and Nanotechnology Conference (MNC2018), Sapporo, Japan, Nov. 13 – 16 (2018).

49.(1751) K. Shimizu, Y. Ueba, M. Kitamura, Y. Ohyagi, M. Hoga, N. Tate, M. Naruse, T.Matsumoto, and S. Kasai: ” Study on Electrical Discrimination of 2D Random Nanostructures Embedded in a Si MOSFET, ” 31st International Microprocesses and Nanotechnology Conference (MNC2018), Sapporo, Japan, Nov. 13 – 16 (2018).

50.(1752) K. Suzuki, R. Horiguchi, M. Iida, and S. Hara: ” Magnetic Domain Structures Depending on Applied Magnetic Fields in MnAs Nanodisks Selectively-Grown on Si (111) Substrates, ” 31st International Microprocesses and Nanotechnology Conference (MNC2018), Sapporo, Japan, Nov. 13 – 16 (2018).

51.(1753) T. Kadowaki, R. Kodaira, and S. Hara:”Structural Investigation of Bended MnAs/InAs Heterojunction Nanowires, “31st International Microprocesses and Nanotechnology Conference (MNC2018), Sapporo, Japan, Nov. 13 – 16 (2018).

52.(1754) Y. Kitazawa, R. Kodaira, R. Horiguchi, W. Jevasuwan, N. Fukata, and S. Hara:”Dependence of Si Nanowire Orientation on Vapor-Liquid-Solid Growth Conditions,” 31st International Microprocesses and Nanotechnology Conference (MNC2018), Sapporo, Japan, Nov. 13 – 16 (2018).

53.(1755) Katsuhiro Tomioka: ” Integration of III-V nanowires on Si and their transistor applications (Plenary), ” 22nd International Conference on Advanced Materials, Rome, Italy, Dec. 10 – 12 (2018).

54.(1756) K. Ando, K. Ueyoshi, Y. Oba, K. Hirose, R. Uematsu, T. Kudo, M. Ikebe, T. Asai, S. Takamaeda-Yamazaki, and M. Motomura:”Dither NN: an accurate neural network with dithering for low bit-precision hardware, “The 2018 International Conference on Field-Programmable Technology (FPT’18), Naha, Japan, Dec. 10 – 14 (2018).

55.(1757) P. Ambalathankandy, T. Shimada, S. Takamaeda-Yamazaki, M. Motomura, T. Asai, and M. Ikebe: ” Analysis of smoothed LHE methods for processing images with optical illusions, ” IEEE International Conference on Visual Communications and Image Processing, Taichung, Taiwan, Dec. 9 – 12 (2018).

56.(1758) S. Rim, S. Suzuki, S. Takamaeda-Yamazaki, M. Ikebe, M. Motomura, and T. Asai:”Approach to reservoir computing with Schmitt trigger oscillator-based analog neural circuits, ” The 7th Japan-Korea Joint Workshop on Complex Communication Sciences, Pyeongchang, Korea, Jan. 6-9 (2019).

57.(1759) S. Yokoyama, M. Ikebe, Y. Kanazawa, T. Ikegami, P. Ambalathankandy, S. Hiramatsu, Y. Takida, and H. Minamide: ” A 32 × 32-Pixel 0.9 THz Imager with Pixel-Parallel 12b VCO-Based ADC in 0.18 μm CMOS,”2019 IEEE International Solid-State Circuits Conference (ISSCC2019), San Francisco, USA, Feb. 17 – 21 (2019).

58.(1760) T. Kaneko, M. Ikebe, S. Takamaeda-Yamazaki, M. Motomura, and T. Asai:”Ternarized backpropagation: a hardware-oriented optimization algorithm for edge-oriented AI devices,”The 7th RIEC International Symposium on Brain Functions and Brain Computer, Research Institute of Electrical Communication, Sendai, Japan, Feb. 22-23 (2019).

59.(1761) T. Kaneko, M. Ikebe, S. Takamaeda-Yamazaki, M. Motomura, and T. Asai: “Hardware-oriented algorithm and architecture for generative adversarial networks, “The 2019 RISP InternationalWorkshop on Nonlinear Circuits, Communications and Signal Processing, Honolulu, USA, Mar. 4 – 7 (2019).

60.(1762) S. Suzuki, S. Rim, S. Takamaeda-Yamazaki, M. Ikebe, M. Motomura, and T. Asai:” Experimental demonstration of physical reservoir computing with nonlinear electronic devices, ” The 2019 RISP International Workshop on Nonlinear Circuits, Communications and Signal Processing, Honolulu, USA, Mar. 4 – 7 (2019).

61.(1763) K. Minamikawa, S. Takamaeda-Yamazaki, M. Ikebe, M. Motomura, and T. Asai:” FPGA-based FORCE learning accelerator towards real-time online reservoir computing,” The 2019 RISP International Workshop on Nonlinear Circuits, Communications and Signal Processing, Honolulu, USA, Mar. 4 – 7 (2019).

62.(1764) T. Hashizume:”Insulated gate technologies for advanced GaN MOS transistors (invited),”11th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials/12th International Conference on Plasma-Nano Technology & Science (ISPlasam2019/IC-PLANTS2019), Nagoya, Japan, March 17- 21 (2019).

63.(1765) K. Takeda, M. Toguchi, and T. Sato: ” Electrochemical characterization of etching damage induced to n-GaN surface, ” 11th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials/12th International Conference on Plasma-Nano Technology & Science (ISPlasam2019/ICPLANTS2019), Nagoya, Japan, March 17 – 21 (2019).

64.(1766) K. Uemura, Y. Komatsu, and T. Sato: ” Low-damage wet etching for AlGaN/GaN recessed-gate HEMTs using photo-electrochemical reactions, ” 11th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials/ 12th International Conference on Plasma-Nano Technology & Science (ISPlasam2019/IC-PLANTS2019), Nagoya, Japan, March 17 – 21 (2019).

65.(1767) S. Kitajima and M. Akazawa: ” Control of SiO2/InAlN Interface by Plasma Surface Oxidation, “11th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials/12th International Conference on Plasma-Nano Technology & Science (ISPlasam2019/ IC-PLANTS2019), Nagoya, Japan, March 17 – 21 (2019).