学会誌論文
学会誌論文等：２７件
(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)
1.(1157) Y. Hori, C. Mizue, and T. Hashizume: ” Interface state characterization of ALD.Al2O3/GaN and ALD-Al2O3/AlGaN/GaN structures, “Physica Status Solidi C 9, pp.1356-1360 (2012).
2.(1158) S. F. A. Rahman, S. Kasai, and A. M. Hashim:”Room temperature nonlinear oper.ation of a graphene-based three-branch nano junction device with chemical doping, ” Appl. Phys. Lett., Vol. 100, pp.193116-1-4 (2012).
3.(1159) 橋詰 保、 GaN電子デバイスにおける絶縁膜界面制御（最近の展望）、応用物理、 81巻、pp.479-484 (2012).
4.(1160) S. Kim, Y. Hori, W.-C. Ma, D. Kikuta, T. Narita, H. Iguchi, T. Uesugi, T. Kachi, and T. Hashizume: ” Interface properties of Al2O3/n-GaN structures with inductively coupled plasma etching of GaN surfaces, ” Jpn. J. Appl. Phys., Vol. 51, pp. 060201-1-3 (2012).
5.(1161) S. F. A. Rahman, A. M. Hashim, and S. Kasai: ” Identi.cation of Graphene Layer Numbers from Color Combination Contrast Image for Wide-Area Characterization,” Jpn. J. Appl. Phys., Vol. 51, pp. 06FD09-1-5 (2012).
6.(1162) T. Muramatsu, K. Miura, Y. Shiratori, Z. Yatabe, and S. Kasai: ” Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-E.ect Transistors Having SiNx Gate Insulator, ” Jpn. J. Appl. Phys., Vol.51, pp. 06FE18-1-5 (2012).
7.(1163) R. Jinbo, T. Kudo, Z. Yatabe and T. Sato: ” Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure, “Thin Solid Films, Vol. 520, pp. 5710-5714 (2012).
8.(1164) C.-Y. Hu and T. Hashizume: ” Non-localized trapping e.ects in AlGaN/GaN het.ero junction .eld-e.ect transistors sub jected to on-state bias stress, “J. Appl. Phys., Vol. 111, pp. 084504-1-9 (2012).
9.(1165) T. Yoshida and T. Hashizume: ” Studies on atomic layer deposition Al2O3/ In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method, ” Appl. Phys. Lett. 101, pp. 122102-1-4 (2012).
10.(1166) M. Akazawa and T. Nakano: ” Investigation of native oxide layers on untreated and chemically treated InAlN surfaces by X-ray photoelectron spectroscopy, “ECS Solid State Letters, Vol. 1, No. 1, pp.P4-P6 (2012).
11.(1167) M. Akazawa and T. Nakano: ” Valence band o.set at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition, ” Appl. Phys. Lett., Vol. 101, pp. 122110-1-4 (2012).
12.(1168) K. Tomioka, M. Yoshimura, and T. Fukui: ” A III-V nanowire channel on Si for high performance vertical transistors, “Nature, Vol. 488, pp.189-192 (2012)
13.(1169) K. Ikejiri, F. Ishizaka, K. Tomioka, and T. Fukui: ” Bidirectional Growth of Indium Phosphide Nanowires, ” Nano Letters, Vol. 12, pp.4770-4774 (2012).
14.(1170) Tomotsugu Ishikura, Takahiro Hiraki, Takashi Matsuda, Joungeob Lee, and Kanji Yoh:” Nuclear spin polarization by out-of-plane spin injection from ferromagnet into an InAs heterostructure, ” MRS Proceedings, 1396 : mrsf11-1396-o07-29, 5 pages (2012).
15.(1171) Liumin Zou, Keita Konishi, Morihisa Hoga, and Kanji Yoh:”Fabrication of Graphene Network via nanoimprint Technology, “MRS Proceedings, 1407 : mrsf11-1407-aa05.81, 4 pages (2012).
16.(1172) T. Otsuji, S. Albon Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhii: ” Graphene materials and devices in terahertz science and technology, “MRS Bulletin, Vol. 37, pp. 1235-1243 (2012).
17.(1173) M. Matys, B. Adamowicz, and T. Hashizume: ” Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement, ” Appl. Phys. Lett., Vol. 101, pp. 231608-1-4 (2012).
18.(1174) K. Takahagi, Y. Otsu, and E. Sano: ” 2.45 GHz high-gain electrically small antenna with composite right/left-handed ladder structure, ” Electron. Lett., Vol. 48, pp. 971-972 (2012).
19.(1175) Yuya Takatsuka, Kazuhiro Takahagi, Eiichi Sano, Victor Ryzhii, and Taiichi Otsuji: ” Gain enhancement in graphene terahertz ampli.ers with resonant structures, “J. Appl. Phys., Vol. 112, pp. 033103-1-4 (2012).
20.(1176) T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhii: ” Graphene-based devices in terahertz science and technology, “J. Phys. D: Appl. Phys., Vol. 45, pp. 303001-1-9 (2012).
21.(1177) T. Tanaka, K. Mori, E. Sano, B. Fugetsu, and H. Yu:”The Luttinger-liquid behavior in single-walled carbon nanotube networks, ” Physica E, Vol. 44, pp. 997-1001 (2012).
22.(1178) Shinjiroh Hara, Shinya Sakita, and Masatoshi Yatago: ” Selective-Area Growth and Electrical Characterization of Hybrid Structures between Semiconducting GaAs Nanowires and Ferromagnetic MnAs Nanoclusters, ” Jpn. J. Appl. Phys., Vol. 51, pp. 11PE01-1-7 (2012).
23.(1179) Kazuhiro Takahagi, Hiromichi Matsushita, Tomoki Iida, Masayuki Ikebe, Yoshi.hito Amemiya, and Eiichi Sano: ” Low-power wake-up receiver with subthreshold CMOS circuits for wireless sensor networks, “Analog Integrated Circuits and Signal Processing, Vol. 75, pp. 199 -205 (2012).
24.(1180) Z. Yatabe, Y. Hori, S. Kim, and T. Hashizume: ” E.ects of Cl2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al2O3/AlGaN/GaN Heterostructures, ” Appl. Phys. Express, Vol. 6, pp. 016502-1-3 (2013).
25.(1181) Yoshinori Kohashi, Shinya Sakita, Shinjiroh Hara, and Junichi Motohisa: ” Pitch-Independent Realization of 30-nm-Diameter InGaAs Nanowire Arrays by Two-Step Growth Method in Selective-Area Metal-Organic Vapor Phase Epitaxy, ” Appl. Phys. Express, Vol. 6, pp. 025502-1-3 (2013).
26.(1182) Y. Masumoto, K. Goto, S. Tomimoto, P. Mohan, J. Motohisa, and T. Fukui: ” Bi.molecular interlayer scattering of electrons in InP/InAs/InP core-multishell nanowires, “Journal of Luminescence, Vol. 133, pp.135-137 (2013)
27.(1183) K. Ikejiri, F. Ishizaka, K. Tomioka, and T. Fukui: ” GaAs nanowire growth on polycrystalline silicon thin .lms using selective-area MOVPE, “Nanotechnology, Vol. 24, pp.115304-1-6 (2013).
