KEYNOTE & INVITED SPEAKERS
KEYNOTE SPEAKERS
Dr. Oliver Hilt (Ferdinand-Braun-Institut gGmbH, Germany)
"Technology of AlN-based power transistors"
Prof. Hideo Ohno (Tohoku Univ., Japan)
"Spintronics non-volatile memory -metal/insulator heterostructure -"
INVITED SPEAKERS (TENTATIVE)
Prof. Akira Satou (Tohoku Univ., Japan)
"3D Rectification Effect in Grating-Gate InGaAs-Channel HEMT for THz Detection"
Dr. Andrew Allerman (Sandia National Labs., USA)
"Al-rich AlGaN alloys for RF and power transistors"
Prof. Dae-Hyun Kim (Kyungpook National Univ., Korea)
"TBA"
Prof. Enrico Zanoni (Univ. of Padova, Italy)
"Scaling of GaN HEMTs for Microwave and Millimeter-Wave Applications: Achieving Control of Short-Channel Effects, Deep Levels and Reliability (tentative)"
Prof. Jan Stake (Chalmers Univ. of Tech., Sweden)
"Integrated Diode Technology for Terahertz Receivers"
Prof. Masataka Higashiwaki (Osaka Metro. Univ./ NICT, Japan)
"TBA"
Dr. Mohamadali Malakoutian (Stanford Univ., USA)
"Heterogenous diamond-GaN integration for device-level thermal management"
Dr. Noren Pan (Microlink Devices Inc., USA)
"Solar Arrays for Stratospheric UAV and Satellites"
Dr. Shinya Ohmagari (AIST, Japan)
"TBA"
Prof. Samuel Graham (Univ. of Maryland, USA)
"Improving Thermal Interfaces and Heat Dissipation in Wide Bandgap Electronics"
Dr. Sebastian Krause (Fraunhofer IAF, Germany)
"AlScN/GaN HEMTs: Towards Higher Power and Bandwidth at Millimeter-Wave Frequencies (tentative)"
Prof. Takuya Maeda (Tokyo Univ., Japan)
"Transport Properties in GaN under High Electric Field"
Prof. Tamotsu Hashizume (IMaSS, Nagoya Univ., Japan)
"MOS Interface Control for GaN FETs and HEMTs (tentative)"
Dr. Tetsuo Narita (Toyota Central R&D Labs. Inc., Japan)
"Engineering of Interface Traps in GaN-MOSFETs to Control The Threshold Voltage Stability and The Channel Mobility (tentative)"
Prof. Wu Lu (Ohio State Univ., USA)
"High Performance Vertical GaN-on-GaN pn Power Diodes"
Dr. Xavier Perpinya (IMB-CNM, Spanish National Research Council, Spain)
"TBA"
Prof. Xin Ou (SIMIT, Chinese Academy of Sciences, China)
"Wafer-Scale Heterogeneous Integration of Semiconductors for High-Performance Power and RF Devices"
Prof. Yuhao Zhang (Virginia Tech, USA)
"Multidimensional Power Devices in GaN and Ga2O3 (tentative)"
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