KEYNOTE & INVITED SPEAKERS
KEYNOTE SPEAKERS
Dr. Oliver Hilt (Ferdinand-Braun-Institut gGmbH, Germany)
"Technology of AlN-based power transistors"
Prof. Hideo Ohno (Tohoku Univ., Japan)
"Spintronics Nonvolatile Memory -A metal/insulator heterostructure -"
INVITED SPEAKERS
Prof. Akira Satou (Tohoku Univ., Japan)
"3D Rectification Effect in Grating-Gate InGaAs-Channel HEMT for THz Detection"
Dr. Andrew Allerman (Sandia National Labs., USA)
"Al-rich AlGaN alloys for RF and power transistors"
Prof. Dae-Hyun Kim (Kyungpook National Univ., South Korea)
"Cryogenic InxGa1-xAs/In0.52Al0.48As quantum-well HEMTs for quantum computing"
Prof. Enrico Zanoni (Univ. of Padova, Italy)
"Scaling of GaN HEMTs for microwave and millimeter-wave applications: achieving control of short-channel effects, deep levels and reliability"
Prof. Masataka Higashiwaki (Osaka Metro. Univ./ NICT, Japan)
"Vertical Ga2O3 (010) FinFETs with (100) Sidewalls Treated by Nitrogen Radical Irradiation"
Dr. Mohamadali Malakoutian (Stanford Univ., USA)
"Heterogenous diamond-GaN integration for device-level thermal management"
Dr. Noren Pan (Microlink Devices Inc., USA)
"Textured Solar Arrays for Stratospheric UAV"
Dr. Shinya Ohmagari (AIST, Japan)
"Large-Area Ultra-Heavy Boron-Doped Diamond Films: Advanced Sensing Material for Electrochemical Fingerprinting"
Prof. Samuel Graham (Univ. of Maryland, USA)
"Considerations for the Thermal Design of Ultrawide Bandgap Semiconductor Devices"
Dr. Sebastian Krause (Fraunhofer IAF, Germany)
"AlScN/GaN HEMTs: Towards Higher Power and Bandwidth at Millimeter-Wave Frequencies"
Prof. Takuya Maeda (Tokyo Univ., Japan)
"Transport Properties in GaN under High Electric Field"
Prof. Tamotsu Hashizume (IMaSS, Nagoya Univ., Japan)
"MOS interface control for GaN FETs and HEMTs"
Dr. Tetsuo Narita (Toyota Central R&D Labs. Inc., Japan)
"Engineering of Interface Charges in AlSiO/AlN/p-type GaN-MOSFETs Toward Improvements of Threshold Voltage Stability and Channel Mobility"
Prof. Wu Lu (Ohio State Univ., USA)
"High Performance Vertical GaN-on-GaN pn Power Diodes"
Dr. Xavier Perpinya (IMB-CNM, Spanish National Research Council, Spain)
"Die-Level Functional Off-Chip Characterization of Power Devices Using Optical Techniques"
Prof. Xin Ou (SIMIT, Chinese Academy of Sciences, China)
"Wafer-Scale Heterogeneous Integration of Functional Materials for High-Performance Power, Photonic and RF Devices"
Prof. Yuhao Zhang (Virginia Tech, USA)
"Multidimensional Power Devices in GaN and Ga2O3"
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