国際会議における講演：46件

(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1883) Suman Mukherjee, Tomioka Katsuhiro, and Junichi Motohisa: "Polarization depen-dence
　　　　　of quantum dot excitonic emission from As-ritch InAsxP1¡x/InP nanowire
　　　　　quantum dot embedded in free-standing InP nanowire", 2023 IEEE International
　　　　　Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience &
　　　　　Nanotechnology (5NANO 2023), Elanji, Ernakulam, Kerala, India, April 27-28
　　　　　(2023).

2.(1884) Mattias Jansson, Fumitaro Ishikawa, Weimin M. Chen, Irina A. Buyanova: "Design
　　　　　Rules for an Efficient Photon Upconversion in Semiconductor Nanostructures", 9th
　　　　　South African Conference on Photonic Materials, Skukuza, South Africa, May 8-12
　　　　　(2023).

3.(1885) R. Ochi, and T. Sato, "Influence of the parallel conduction on the current nonlinearity
　　　　 of GaN based MIS-HEMTs in the forward bias region", 46th Workshop on
　　　　 Compound Semiconductor Devices and Integrated Circuits held in Europe, Palermo,
　　　　 Italy, May 21-25 (2023).

4.(1886) I. A. Buyanova, F. Ishikawa, and W. M. Chen: "(Invited) Nanowires from highly
　　　　 mismatched alloys for nanophotonics", International Conference on Nanophotonics
　　　　 and photovoltaics, Samarkand, Uzbekistan, May 23-27 (2023).

5.(1887) Yuki Azuma, Shun Kimura, Hironori Gamo, Junichi Motohisa, Katsuhiro Tomioka:
　　　　 "Selective-area growth of wurtzite InP fin structure", Compound Semiconductor
　　　　 Week 2023 (CSW2023), Jeju, Korea, May 29-June 2 (2023).

6.(1888) Ziye Zheng, Shun Kimura, Junichi Motohisa, Katsuhiro Tomioka: "Fabrication of
　　　　 vertical light-emitting diodes using wurtzite InP/AlInP core-multishell nanowi",
　　　　 Compound Semiconductor Week 2023 (CSW2023), Jeju, Korea, May 29-June 2
　　　　 (2023).

7.(1889) Fumitaro Ishikawa: "(Invited) Material Exploration and Wafer Scale Growth of
　　　　 GaAs Related Nanowires by Self-catalyzed Molecular Beam Epitaxy", 11th International
　　　　 Conference on Materials for Advanced Technologies 2023 (ICMAT 2023),
　　　　 Singapore, June 28 (2023).

8.(1890) M. Akazawa, Y. Luo, and Y. Hatakeyama: "Effects of Long-Term Low-Temperature
　　　　 Annealing on Lightly Mg-Implanted GaN," 21st InternationalWorkshop on Junction
　　　　 Technology (IWJT2023), Kyoto, Japan, June 8-9 (2023).

9.(1891) S. Hara and M. Akabori: "(Invited) Magnetic Domain Analysis of CoFe/MgO
　　　　 Nanolayer Electrode Patterns for Spin-Injection into Semiconducting Nanowires",
　　　　 12th International Conference on Processing and Manufacturing of Advanced Materials
　　　　 (THERMEC 2023), Vienna, Austria, July 2-7 (2023).

10.(1892) T. Yoshida and S. Kasai: "Readout of Voluntary Motion From Myoelectric Signals
　　　　 Based on Reservoir Computing Framework", 2023 Asia-Pacific Workshop on
　　　　　 Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2023),
　　　　　 Yokohama, Japan, July 10-11 (2023).

11.(1893) T. Hashizume, and T. Sato: "(Invited) MOS technologies for GaN power transistors",
　　　　　 2023 Asia-Pacific Workshop on Fundamentals and Applications of Advanced
　　　　　 Semiconductor Devices (AWAD2023), Yokohama, Japan, July 10-11 (2023).

12.(1894) Manami Okamoto, Tomoya Akamatsu, Katsuhiro Tomioka, and Junichi Motohisa:
　　　　　 "Characterization of Nanowire Light-Emitting Diodes with InP/InAsP Heterostructures
　　　　　 Emitting in Telecom Band", 2023 International Conference on Solid State
　　　　　 Device and Materials (SSDM2023), Nagoya, Japan, September 5-8 (2023).

13.(1895) S. Okuda, S. Yuzawa, M. Makino, W. Jevasuwan, N. Fukata, and S. Hara: "Control
　　　　　 of Ge Nanowire Orientation in Selective-Area VLS Growth on Si (111)", 2023 International
　　　　　 Conference on Solid State Device and Materials (SSDM2023), Nagoya,
　　　　　 Japan, September 5-8 (2023).

14.(1896) Y. Fujiwara, R. Ochiai, L. Zi, M. Akabori, and S. Hara: "Comparison of Magnetic
　　　　　 Domain Formation in CoFe/MgO Nanolayer Patterns on SiO2/Si (111) and
　　　　　 GaAs (001) Substrates", 2023 International Conference on Solid State Device and
　　　　　 Materials (SSDM2023), Nagoya, Japan, September 5-8 (2023).

15.(1897) Keisuke Minehisa, Hidetoshi Hashimoto, Kaito Nakama, Fumitaro Ishikawa: "Molecular
　　　　　 Beam Epitaxial Growth of GaInAs, GaNAs and GaInNAs Nanowires over 2-
　　　　　 inch Si(111) Substrate Showing Emission at Near Infrared Regime", The 37th North
　　　　　 American Conference on Molecular Beam Epitaxy (NAMBE 2023), Madison, USA,
　　　　　 September 18 (2023).

16.(1898) Yoriko Tominaga, Koji Kimura, Seiya Saito, Minato Harada, Yusaku Kozai, Fumitaro
　　　　　 Ishikawa, Naohisa Happo, and Kouichi Hayashi: "X-ray fluorescence holography
　　　　　 of low-temperature-grown GaAs1¡xBix", International conference on complex
　　　　　 orders in condensed matter: aperiodic order, local order, electronic order, hidden
　　　　　 order, Evian-les-Bains, France, September 24-29 (2023).

17.(1899) A. Buyanova, F. Ishikawa, and W. M. Chen: "(Invited) Nanowires from Dilute Nitride
　　　　　 and Dilute Bismide Alloys for Nanophotonics", 244th ECS Meeting, Gothenburg,
　　　　　 Sweden, October 8-12 (2023).

18.(1900) H. Hashimoto, K. Minehisa, K. Nakama, K. Nagashima, T. Yanagida, F. Ishikawa:
　　　　　 "Enrolled Cylinder Transferred from Coalesced GaAs/Al-rich AlGaAs Core-Shell
　　　　　 Nanowires through Native Oxidation", NanowireWeek 2023, Atlanta, USA, October
　　　　　 9-13 (2023).

19.(1901) Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa: "Integration of InGaAs/GaSb
　　　　　 core-shell nanowires on Si by selective-area growth", Nanowire Week 2023, Atlanta,
　　　　　 USA, October 9-13 (2023).

20.(1902) Ziye Zheng, Shun Kimura, Junichi Motohisa, Katsuhiro Tomioka: "Demonstration
　　　　　 of wurtzite InP/AlInP core-multishell nanowire based light-emitting diodes",
　　　　　 Nanowire Week 2023, Atlanta, USA, October 9-13 (2023).

21.(1903) Yuki Azuma, Junichi Motohisa, Katsuhiro Tomioka: "Selective-area growth of wurtzite
　　　　　 InP nanowire and fin structures", NanowireWeek 2023, Atlanta, USA, October 9-13
　　　　　 (2023).

22.(1904) Yuki Takeda, Hironori Gamo, Katsuhiro Tomioka: "Selective-area growth of InAs
　　　　　 nanowire on SOI substrate and vertical transistor application", NanowireWeek 2023,
　　　　　 Atlanta, USA, October 9-13 (2023).

23.(1905) K. Nakama, K. Minehisa, A. Higo, F. Ishikawa: "Core-Multishell Nanowires of
　　　　　 GaAs/GaInNAs Tripe Quantum Wells Emitting up to Telecommunication Wavelength
　　　　　 1.28 ¹m", Nanowire Week 2023, Atlanta, USA, October 9-13 (2023).

24.(1906) K. Minehisa, H. Hashimoto, K. Nakama, F. Ishikawa: "Molecular Beam Epitaxy
　　　　　 of GaInNAs Nanowires over 2-inch Si(111) Substrate Operating at Near Infrared
　　　　　 Regime", Nanowire Week 2023, Atlanta, USA, October 9-13 (2023).

25.(1907) Bin Zhang, Jan E. Stehr, Ping-Ping Chen, Xingjun Wang, Fumitaro Ishikawa,
　　　　　 Weimin M. Chen, Irina A. Buyanova: "Enhancing Efficiency of Second-Harmonic
　　　　　 Generation in III-V Nanowires via Lattice Engineering", IEEE Nanotechnology Materials
　　　　　 and Devices Conference (IEEE-NMDC), Paestum, Italy Oct. 22-25 (2023).

26.(1908) S. Hara: "(Invited) Magnetic Domain Control in CoFe Nanolayer Electrodes toward
　　　　　 Vertical Nanowire Spintronic Device", 26th Hokkaido University-Seoul National University
　　　　　 Joint Symposium, "the 2023 International Workshop on New Frontiers in
　　　　　 Convergence Science and Technology", Sapporo, Japan, November 2 (2023).

27.(1909) S. Yuzawa, S. Okuda, M. Makino, W. Jevasuwan, N. Fukata, and S. Hara: "Selective-
　　　　　 Area VLS Growth of Ge Nanowires using Periodic Thin Film Pattern of Au Catalyst
　　　　　 on Si (111)", 26th Hokkaido University-Seoul National University Joint Symposium,
　　　　　 "the 2023 International Workshop on New Frontiers in Convergence Science and
　　　　　 Technology", Sapporo, Japan, November 2 (2023).

28.(1910) R. Ochiai, Y. Fujiwara, L. Zi, M. Akabori, and S. Hara: "Magnetic Domains in
　　　　　 CoFe/MgO Nanolayer Patterns Fabricated on Amorphous SiO2 and Single-Crystalline
　　　　　 GaAs (001) Substrates", 26th Hokkaido University-Seoul National University Joint
　　　　　 Symposium, "the 2023 International Workshop on New Frontiers in Convergence
　　　　　 Science and Technology", Sapporo, Japan, November 2 (2023).

29.(1911) Kaito Nakama, Keisuke Minehisa, Akio Higo, Fumitaro Ishikawa: "GaAs/GaInNAs/
　　　　　 GaAs Core-Multishell Nanowires with Multiple Quantum-Wells Emitting at 1.2 ¹m
　　　　　 for Telecommunications", 14th International Conference on Nitride Semiconductors
　　　　　 (ICNS-14), Fukuoka, Japan, November 12-17 (2023).

30.(1912) Mattias Jansson, Fumitaro Ishikawa, Weimin M. Chen, Irina A. Buyanova: "Energy
　　　　　 upconversion in core/shell nanowire heterostructures based on dilute nitride alloys",
　　　　　 14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan,
　　　　　 November 12-17 (2023).

31.(1913) U. Takatsu, K. Kubo, and T. Sato: "Low-damage Photo-electrochemical Etching
　　　　　 and Electrochemical Characterization of p-GaN Surface", 14th International Conference
　　　　　 on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, November 12-17
　　　　　 (2023).

32.(1914) Y. Hatakeyama, G. Shindo, Y. Luo, and M. Akazawa: "Detection of Gap States
　　　　　 Originated from Ga-Interstitial and Divacancy Defects in Mg-Implanted GaN Using
　　　　　 MOS Structures", 14th International Conference on Nitride Semiconductors (ICNS-
　　　　　 14), Fukuoka, Japan, November 12-17 (2023).

33.(1915) T. Nukariya, J. Yining, U. Takatsu, T. Sato, and M. Akazawa: "Interface Properties
　　　　　 of p-type GaN MOS Structures Examined by Sub-Bandgap-Light-Assisted
　　　　　 Capacitance-Voltage Measurement", 14th International Conference on Nitride Semiconductors
　　　　　 (ICNS-14), Fukuoka, Japan, November 12-17 (2023).

34.(1916) T. Hashizume and M. Akazawa; "(Invited) MOS interface technologies for highpower
　　　　　 and high-frequency GaN transistors", 14th International Conference on Nitride
　　　　　 Semiconductors (ICNS-14), Fukuoka, Japan, November 12-17 (2023).

35.(1917) Prasoon Ambalathankandy, Masayuki Ikebe, and Sae Kaneko: "A Psychological
　　　　　 Study: Importance of Contrast and Luminance in Color to Grayscale Mapping",
　　　　　 31st Color and Imaging Conference (CIC31), Paris, France, November 13-17 (2023).

36.(1918) Hidetoshi Hashimoto , Keisuke Minehisa , Kaito Nakama , Kazuki Nagashima ,
　　　　　 Takeshi Yanagida , Fumitaro Ishikawa: "Structural control of GaAs/AlGaAs coreshell
　　　　　 nanowires with buried entire structure, native oxidation, and strain-induced
　　　　　 deformations tuned by top-shell layer", 36th International Microprocesses and Nanotechnology
　　　　　 Conference (MNC 2023), Sapporo, Japan, November 14-17 (2023).

37.(1919) Ziye Zheng, Shun Kimura, Junichi Motohisa, Katsuhiro Tomioka: "Deomnstration
　　　　　 of vertical light-emitting diodes using wurtzite InP/AlInP core-multishell nanowires",
　　　　　 36th International Microprocesses and Nanotechnology Conference (MNC 2023),
　　　　　 Sapporo, Japan, November 14-17 (2023).

38.(1920) T. Mitsuya, R. Lyu, and S. Kasai: "Sensitivity to an embedded nanostructure in
　　　　　 a micrometer-channel-length Si MOSFET", 36th International Microprocesses and
　　　　　 Nanotechnology Conference (MNC 2023), Sapporo, Japan, November 14-17 (2023).

39.(1921) S. Okuda, S. Yuzawa, M. Makino, W. Jevasuwan, N. Fukata, and S. Hara: "Aggregation
　　　　　 Effect of Au Thin Film Catalysts on Controlling Selective-Area VLS Growth of
　　　　　 Ge Nanowires on Si (111)", 36th International Microprocesses and Nanotechnology
　　　　　 Conference (MNC 2023), Sapporo, Japan, November 14-17 (2023).

40.(1922) T. Sato, and R. Ochi: "(Invited) Current Non-linearity of GaN-based MIS HEMTs
　　　　　 in Forward Bias Region", International Conference on Materials and Systems for
　　　　　 Sustainability (ICMaSS2023), Nagoya, Japan, December 1-3 (2023).

41.(1923) Y. Hatakeyama, Y. Luo, G. Shindo, and M. Akazawa: "MOS-structure based study
　　　　　 of defects in Mg-ion-implanted GaN", International Conference on Materials and
　　　　　 Systems for Sustainability (ICMaSS2023), Nagoya, Japan, December 1-3 (2023).

42.(1924) Masayuki Ikebe: "(Invited) Image Sensing Technologies", 30th International Display
　　　　　 Workshops (IDW '23), Niigata, Japan, December 6-8 (2023).

43.(1925) Prasoon Ambalathankandy, Yafei Ou, and Masayuki Ikebe: "Halo Reduction in
　　　　　 Display Systems through Smoothed Local Histogram Equalization and Human Visual
　　　　　 System Modeling", 30th International Display Workshops (IDW '23), Niigata,
　　　　　 Japan, December 6-8 (2023).

44.(1926) T. Sato, "(Keynote) Photoelectrochemical Etching of III-Nitride Semiconductors
　　　　　 for Nanostructure Fabrication", International Conference on Advanced Functional
　　　　　 Materials and Devices (AFMD2024), Chennai, India, February 26-29 (2024).

45.(1927) M. Akabori and S. Hara: "(Invited) Magnetic Domain Control of CoFe/MgO Nanolayer
　　　　　 Patterns for III-V Semiconductor Spintronic Device Applications", 16th International
　　　　　 Symposium on Advanced Plasma Science and its Applications for Nitrides
　　　　　 and Nanomaterials / 17th International Conference on Plasma-Nano Technology &
　　　　　 Science / 13th Asia-Pacific International Symposium on the Basics and Applications
　　　　　 of Plasma Technology (ISPlasma2024/IC-PLANTS2024/APSPT-13), Nagoya,
　　　　　 Japan, March 3-7 (2024).

46.(1928) Yining Jiao, Takahide Nukariya, Umi Takatsu, Taketomo Sato, and Masamichi
　　　　　 Akazawa: "Effects of SiO2-Cap Annealing Prior to Interface Formation on Properties
　　　　　 of Al2O3/p-type GaN Interfaces," 16th International Symposium on Advanced
　　　　　 Plasma Science and its Applications for Nitrides and Nanomaterials / 17th International
　　　　　 Conference on Plasma-Nano Technology & Science / 13th Asia-Pacific
　　　　　 International Symposium on the Basics and Applications of Plasma Technology
　　　　　 (ISPlasma2024/IC-PLANTS2024/APSPT-13), Nagoya, Japan, March 3-7 (2024).