学会誌論文等：17件

(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1533) Katsuhiro Tomioka, Kazuharu Sugita, and Junichi Motohisa: "Enhanced Light Extraction
　 　　　 of Nano-Light-Emitting Diodes with Metal-Clad Structure Using Vertical
　　　　 GaAs/GaAsP Core-Multishell Nanowires on Si Platform", Advanced Photonics Research,
　　　　 Vol. 4, No. 7, pp. 2200337-1-7 (2023).

2.(1534) P. Srikram, P. Ambalathankandy, M. Motomura, and M. Ikebe: "A 0.5 V Modified
　　　　 Pseudo-Differential Current-Starved Ring-VCO with Linearity Improvement for IoT
　 　　　 Devices" Proc. of 2023 International Electrical Engineering Congress (iEECON),
　　　　 pp. 219-223 (2023).

3.(1535) H. Wang, Y. Ou, W. Fang, P. Ambalathankandy, N. Goto, G. Ota, T. Okino, J.
　　　　 Fukae, K. Sutherl,M. Ikebe, and T. Kamishima: "A deep registration method for
　　　　 accurate quantification of joint space narrowing progression in rheumatoid arthritis",
　　　　 Computerized Medical Imaging and Graphics, Vol. 108, pp. 102273-1-11 (2023).

4.(1536) Y. Hatakeyama, T. Narita, M. Bockowski, T. Kachi, and M. Akazawa: "Investigation
　　　　 of gap states near conduction band edge in vicinity of interface between
　　　　 Mg-ion-implanted GaN and Al2O3 deposited after ultra-high-pressure annealing",
　　　　 Jpn. J. Appl. Phys. Vol. 62, pp. SN1002-1-7 (2023).

5.(1537) Kaito Nakama, Mitsuki Yukimune, Naohiko Kawasaki, Akio Higo, Satoshi Hiura,
　　　　 Akihiro Murayama, Mattias Jansson, Weimin M. Chen, Irina A. Buyanova, Fumitaro
　　　　 Ishikawa: "GaAs/GaInNAs core-multishell nanowires with a triple quantumwell
　 　　　structure emitting in the telecommunication range", Appl. Phys. Lett., Vol.123,
　 　　　No. 8, pp. 081104-1-6 (2023).

6.(1538) M. Jansson, V. V. Nosenko, G. Yu Rudko, F. Ishikawa, W. M. Chen, I. A. Buyanova:
　　　　 "Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires", Scientific
　　　　　Reports, Vol. 13, pp. 12880-1-10 (2023).

7.(1539) Hironori Gamo, Chen Lian, Junichi Motohisa, and Katsuhiro Tomioka: "Selective-
　 　　　 Area Growth of Vertical InGaAs/GaSb Core-shell Nanowires on Silicon and Dual
　　　　 Switching Properties", ACS Nano, Vol. 17, No. 18, pp. 18346-18351 (2023).

8.(1540) R. Ochi, T. Togashi, Y. Osawa, F. Horikiri, H. Fujikura, K. Fujikawa, T. Furuya, R.
　 　　　 Isono, M. Akazawa, and T. Sato: "Investigation of dominance in near-surface region
　 　　　 on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC
　　　　 etching techniques", Appl. Phys. Express, Vol. 16, No. 9, pp. 091002-1-4 (2023).

9.(1541) Y. Luo, Y. Hatakeyama, and M. Akazawa: "Effects of low-temperature annealing
　　　　 on net doping profile of Mg-ion-implanted GaN studied by MOS capacitance-voltage
　 　　　 measurement", Jpn. J. Appl. Phys., Vol. 62, No. 12, pp. 126501-1-6 (2023).

10.(1542) Suman Mukherjee, Katsuhiro Tomioka, Junichi Motohisa: "Polarization Dependence
　 　　　 of Excitonic Emission from As-rich Single InAsxP1¡x Quantum Dot Embeded
　　　　　 in Free-standing InP Nanowire", Nano World J., Vol. 9, No.S5, pp. S202-S205
　　　　　 (2023).

11.(1543) 石川史太郎:「化合物半導体ナノワイヤの新材料開拓」, 応用物理, 93 巻, 1 号, pp.
　　　　　 24-28 (2024).

12.(1544) Fumitaro Ishikawa: "Exploring novel compound semiconductor nanowires", JSAP
　　　　　 Review 2024, pp. 240403-1-6 (2024).

13.(1545) Mattias Jansson, Valentyna V. Nosenko, Yuto Torigoe, Yuto Torigoe, Kaito Nakama,
　　　　　 Mitsuki Yukimune, Akio Higo, Fumitaro Ishikawa,Weimin M. Chen, Irina A. Buyanova:
　　　　　 "High-Performance Multiwavelength GaNAs Single Nanowire Lasers", ACS Nano,
　　　　　 Vo. 18, pp. 1477-1484 (2024).

14.(1546) Shinjiro Hara,Wei Dai, Ryoma Horiguchi,Wataru Kanetsuka, and Masashi Akabori:
　　　　　 "Incremental Analysis of Magnetic Domains in Multiple Types of Ferromagnetic
　　　　　 CoFe Nanolayer Patterns", Phys. Status Solidi B, Vol. 261, No. 3, pp. 2300529-1-7
　　　　　 (2024).

15.(1547) Masahiro Sasaki, Tomoya Akamatsu, Katsuhiro Tomioka, and Junichi Motohisa:
　　　　　 "Size control of InP nanowires by in situ annealing and its application to the formation
　　　　　 of InAsP quantum dots", Nanotechnology, Vol. 35, No. 19, pp. 195604-1-8
　　　　　 (2024).

16.(1548) Junichi Motohisa, Tomoya Akamatsu, Manami Okamoto, and Katsuhiro Tomioka:
　　　　　 "Characterization of nanowire light-emitting diodes with InP/InAsP heterostructures
　　　　　 emitting telecom band", Jpn. J. Appl. Phys., Vol. 63, No. 3, pp. 03SP08-1-6
　　　　　 (2024).
17.(1549) T. Mitsuya, R. Lyu and S. Kasai: "A study on sensitivity to an embedded nanostructure
　　　　　 in a micrometer-channel-length Si MOSFET", Jpn. J. Appl. Phys., Vol.
　　 　　　63, No. 3, pp.03SP60-1-7 (2024).