学会誌論文等：16件

(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1517) Shun Kimura, Hironori Gamo, Yu Katsumi, Junichi Motohisa and Katsuhiro Tomioka: "InP nanowire light-emitting diodes with different pn-junction structures", Nanotechnology, Vol. 33, No. 30, pp. 305204-1-7 (2022).

2.(1518) Mattias Jansson, Fumitaro Ishikawa, Weimin M. Chen, Irina A. Buyanova: "DesigningSemiconductor Nanowires for Efficient Photon Upconversion via Heterostructure Engineering", ACS Nano, Vol. 16, pp. 12666-12676 (2022) .

3.(1519) E. Sano and and M. Ikebe: "Analytical Methods for Evaluating the Characteristics of Noise Suppression Sheets", IEEE Transactions on Electromagnetic Compatibility, Vol. 64, No. 4, pp. 1052-1057 (2022).

4.(1520) S. Kasai: "(Review Paper) Semiconductor technologies and related topics for implementation of electronic reservoir computing systems", Semicon. Sci. Technol., Vol.37, pp. 103001-1-15 (2022).

5.(1521) Y. Ou, P. Ambalathankandy, R. Furuya, T. Kamishima, and M. Ikebe: "Joint Angle Correction in Rheumatoid Arthritis and Its Reliability Analysis Based on Phase
Dispersion Quantification", Open Journal of Medical Imaging, Vol. 12, No. 4, pp. 171-179 (2022).

6.(1522) Masamichi Akazawa, Yuya Tamamura, Takahide Nukariya, Kouta Kubo, Taketomo Sato, Tetsuo Narita, and Tetsu Kachi: "Detection of defect levels in vicinity of
Al2O3/p-type GaN interface using sub-bandgaplight-assisted capacitance-voltagemethod", J. Appl. Phys., Vol. 132, pp. 195302-1-10 (2022).

7.(1523) Y. Kanazawa, P. Ambalathankandy, and M. Ikebe: "Pixel Variation Characteristics of a Global Shutter THz Imager and its Calibration Technique", IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, published online (8 pages) (2022).

8.(1524) Y. Hatakeyama and M. Akazawa: "Interface state density distribution near conduction band edge at Al2O3/Mg-ion-implanted GaN interface formed after activation annealing using AlN cap layer", AIP Advances, Vol. 12, pp. 125224-1-7 (2022).

9.(1525) S. Kasai: "Thermally driven single-electron stochastic resonance," Nanotechnology, Vol. 33, pp.505203-1-8 (2022).

10.(1526) T. Okino, Y. Ou, M. Ikebe, K. Tamura, K. Sutherland, J. Fukae, K. Tanimura, and T. Kamishima: "Fully automatic software for detecting radiographic joint space narrowing progression in rheumatoid arthritis: phantom study and comparison with visual assessment," Japanese Journal of Radiology, published online (11 pages) (2022).

11.(1527) Osamu Ueda, Noriaki Ikenaga, Yukihiro Horita, Yuto Takagaki, Fumitaka Nishiyama, Mitsuki Yukimune, Fumitaro Ishikawa, and Yoriko Tominaga: "Structural evaluation of GaAs1¡xBix obtained by solid-phase epitaxial growth of amorphous GaAs1¡x Bix thin films deposited on (001) GaAs substrates", J. Cryst. Growth Vol. 601, pp. 126945-1-11 (2023).

12.(1528) Y. Ou, P. Ambalathankandy, R. Furuya, S. Kawada, T. Zeng, Y. An, T. Kamishima, K. Tamura, and M. Ikebe: "A Sub-Pixel Accurate Quantification of Joint Space
Narrowing Progression in Rheumatoid Arthritis", IEEE Journal of Biomedical and Health Informatics, Vol. 27, No. 1, pp. 53-64 (2023).

13.(1529) Taiga Kunimoto, Shizuka Obara, Shinjiro Hara, and Junichi Motohisa: "Generation of Cylindrical Vector Beam from GaAs/InGaAs/GaAs Core-Multishell Nanowire
Cavity", Jpn. J. Appl. Phys., Vol. 62, pp. SC1072-1-7 (2023).

14.(1530) Yuki Azuma, Shun Kimura, Hironori Gamo, Junichi Motohisa, and Katsuhiro Tomioka: "Current injection and luminescence properties of wurtzite InP nanowires with crystal phase transition", Jpn. J. Appl. Phys., Vol. 62, pp. SC2011-1-4 (2023).

15.(1531) Keisuke Minehisa, Ryo Murakami, Hidetoshi Hashimoto, Kaito Nakama, Kenta Sakaguchi, Rikuo Tsutsumi, Takeru Tanigawa, Mitsuki Yukimune, Kazuki agashima, Takeshi Yanagida, Shino Sato, Satoshi Hiura, Akihiro Murayama, and Fumitaro Ishikawa: "Wafer-scale integration of GaAs/AlGaAs core-shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy ", Nanoscale Adv. 5, pp.1651-1663 (2023).

16.(1532) Zhe-Rui Gu and Shinjiro Hara: "Magnetic Domain Control and Its Dependence on Aspect Ratio and Thickness in Ni Nanolayer Patterns for Nanowire Spintronic
Devices", Jpn. J. Appl. Phys., Vol. 62, pp. SG1012-1-6 (2023).