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 Research Center For Integrated Quantum Electronics, Hokkaido University
       
MOVPE Nanostructure Group
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MOVPE Nanostructure Group TOP
Research Activity
Journals
 ｜2006｜ ｜2005｜ ｜2004｜ ｜2003｜
｜2002｜ ｜2001｜ ｜2000｜ ｜1999｜
｜1998｜ ｜1997｜ ｜1996 and before｜
Some publications can be found in our Database of Research Activity.

2006

  1. Shinjiro Hara and Takashi Fukui: "Hexagonal ferromagnetic MnAs nanocluster formation on GaInAs/InP (111)B layers by metal-organic vapor phase epitaxy", Appl. Phys. Lett. 89 113111 (2006). (also at Virtual Journal of Nanoscience and Nanotechnology, Volume 14, Issue 13)
  2. Premila Mohan, Junichi Motohisa and Takashi Fukui:" Fabrication of InP/InAs/InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy", Appl. Phys. Lett. 88, 133105 (2006). (download from HUSCAP) (also at Virtual Journal of Nanoscience and Technology, Volume 13, Issue 14)
  3. Junichi Motohisa and Takashi Fukui: "Semiconductor Nanowires and Their Application to Nanodevices (in Japanese)", Oyo Buturi 75, 296-302 (2006).
  4. Premila Mohan, Junichi Motohisa, and Takashi Fukui: "Realization of conductive InAs nanotubes based on lattice-mismatched InP/InAs core-shell nanowires", Appl. Phys. Lett. 88, 013110 (2006). (download from HUSCAP) (also at Virtual Journal of Nanoscience and Technology, Volume 13, Issue 2)

2005

  1. Lin Yang, Junichi Motohisa, Junichiro Takeda, and Takashi Fukui: "Promising low-damage fabrication method for the photonic crystals with hexagonal or triangular air holes: selective area metal organic vapor phase epitaxy", Optics Express Vol. 13, No. 26, pp.10823-10832
  2. D. Nataraj, N. Ooike, J. Motohisa, and T. Fukui:"Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy", Appl. Phys. Lett. 87, 193103 (2005). (also at Virtual Journal of Nanoscience and Technology, Volume 12, Issue 20)
  3. Junichiro Takeda, Masashi Akabori, Junichi Motohisa, Richard Notzel and Takashi Fukui:"Selective-area MOVPE fabrication of GaAs? hexagonal air-hole arrays on GaAs(111)B substrates using flow-rate modulation mode", Nanotechnology 16, pp.2954-2957 (2005)
  4. Premila Mohan, Junichi Motohisa and Takashi Fukui: "Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays", Nanotechnology 16, pp. 2903-2907 (2005).
  5. J. Noborisaka, J. Motohisa, S. Hara, and T. Fukui: "Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy", Appl. Phys. Lett. 87, 093109 (2005). (see cover of APL at http://apl.aip.org/apl/covers/87_9.jsp )(also at Virtual Journal of Nanoscience and Technology, Volume 12, Issue 10)
  6. Y. Miyoshi, F. Nakajima, J. Motohisa, and T. Fukui:"A 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy", Appl. Phys. Lett. 87, vol. 3, 033501 (2005). (see cover of APL at http://apl.aip.org/apl/covers/87_3.jsp)(also at Virtual Journal of Nanoscience and Technology, Volume 12, Issue 4)
  7. Jinichiro Noborisaka, Junichi Motohisa, and Takashi Fukui: "Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy", Appl. Phys. Lett. 86, 213102 (2005). (also at Virtual Journal of Nanoscience and Technology, Volume 11, Issue 21)
  8. O. Matsuda, T. Tachizaki, T. Fukui, J. J. Baumberg, and O. B. Wright: "Acoustic phonon generation and detection in GaAs/Al[sub 0.3]Ga[sub 0.7]As quantum wells with picosecond laser pulses", Phys. Rev. B 71, 115330 (2005). (see also publisher's note:O. Matsuda et al., Phys. Rev. B 71, 159903 (E) (2005).)
  9. Lin Yang, Junichi Motohisa, and Takashi Fukui: "Suggested procedure for the use of the effective-index method for high-index-contrast photonic crystal slabs", Opt. Eng. 44, 078002 (2005).
  10. L. Yang, J. Motohisa, and T. Fukui:"Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides," Jpn. J. Appl. Phys. Vol. 44, No. 4B, 2005, pp. 2531-2536 (2005).
  11. S. Hara, J. Motohisa, J. Noborisaka, J. Takeda, and T. Fukui: "Photoluminescnce from single hexagonal nano-wire grown by selective area MOVPE," Inst. Phys. Conf. Ser. No 184, pp.393-387 (2005).

2004
  1. L. Besombes, J. J. Baumberg, and J. Motohisa: "Polarization-dependent Ultrafast Rabi Oscillations in Single InGaAs Quantum Dots," Semiconductor Science and Technology, 19 (4), S148-S151 (2004).
  2. Junichiro Takeda, Masaru Inari, Junichi Motohisa and Takashi Fukui: "Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE," Journal of Crystal Growth, Volume 272, 1-4, pp. 570-575 (2004).
  3. N, Ooike, J. Motohisa, and T. Fukui: "MOVPE selectively grown GaAs nano-wires with self-aligned W side gate," Journal of Crystal Growth, v 272, n 1-4, p 175-179 (2004).
  4. J. Motohisa J. Noborisaka, J. Takeda, M. Inari, and T. Fukui: "Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates," Journal of Crystal Growth, v 272, n 1-4, p 180-185 (2004).
  5. N. Ooike, J. Motohisa, and T. Fukui "Fabrication of GaAs nanowire devices with self-aligning W-gate electrodes using selective-area MOVPE," Thin Solid Films, v 464-465, p 220-224 (2004).
  6. J. Motohisa, J. Takeda, M. Inari, J. Noborisaka, and T. Fukui "Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE," Physica E, v 23, n 3-4, p 298-304 (2004).
  7. Premila Mohan ,Junichi Motohisa , and Takashi Fukui "Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy," Applied Physics Letters Volume 84, Issue 14, pp. 2664-2666 (2004).
  8. M. Inari, J. Takeda, J. Motohisa, and T.Fukui: "Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals," Physica E Vol.21, No.2-4, pp.620--624 (2004).
  9. J. Motohisa, J. Takeda, M. Inari, and T. Fukui: "Growth and optical properties of 2D photonic crystals based on hexiagonal GaAs/AlGaAs pillar arrays by selective-area metalorganic vapor phase epitaxy," Mat. Res. Soc. Proc. Vol. 797, W.6.6.1-W.6.6.6 (2004).
  10. H. J. Kim, J. Motohisa and T. Fukui: "Formation of GaAs wire structures and position controlled In$_{0.8}$Ga$_{0.2}$As quantum dots on SiO$_{2}$-patterned vicinal (001) GaAs substrate," Nanotechnology Vol.15, pp.292-296 (2004).
  11. J. Motohisa, J. Takeda, M. Inari, and T. Fukui: "Growth and optical properties of 2D photonic crystals based on hexiagonal GaAs/AlGaAs pillar arrays by selective-area metalorganic vapor phase epitaxy," Mat. Res. Soc. Proc. Vol. 797, W.6.6.1-W.6.6.6 (2004).
  12. H. J. Kim, J. Motohisa and T. Fukui: "Formation of GaAs wire structures and position controlled In$_{0.8}$Ga$_{0.2}$As quantum dots on SiO$_{2}$-patterned vicinal (001) GaAs substrate," Nanotechnology Vol.15, pp.292-296 (2004).

2003
  1. F. Nakajima,Y. Miyoshi, J. Motohisa and T. Fukui: "Single-electron AND/NAND logic circuits based on a self-organized dot network," Appl. Phys. Lett. Vol. 83, No.13, pp.2680-2682 (2003). (see cover of APL at http://apl.aip.org/apl/covers/83_13.jsp)
  2. M. Akabori, J. Takeda, J. Motohisa and T. Fukui: "InGaAs nano-pillar array formation on partially masked InP (111)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application," Nanotechnology Vol.14, No.10, pp.1071-1074 (2003).
  3. L. Besombes, J. J. Baumerg and J. Motohisa: "Excited States in Optically Gated Charged Single InAs Quantum Dots," physica status solidi (c) Vol.0, No.5, pp.1501-1505 (2003).
  4. P. Mohan, F. Nakajima, M. Akabori, J. Motohisa and T. Fukui: "Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy," Appl. Phys. Lett. Vol. 83, No. 4, pp. 689-691, (2003).
  5. L. Besombes, J. J. Baumberg and J. Motohisa:"Coherent Spectroscopy of Optically Gated Charged Single InGaAs Quantum Dots," Phys. Rev. Lett. Vol.90, No.25, pp. 257402-1-257402-4 (2003).
  6. H. Takahashi, Y. Miyoshi, F. Nakajima, J. Motohisa and T. Fukui: "Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE," Appl. Surf. Sci. Vol. 216, No.1-4, pp. 402-406 (2003).

2002
  1. W.G. van der Wiel, S. De Franceschi, J.M. Elzerman, S. Tarucha, L.P. Kouwenhoven, J. Motohisa, F. Nakajima and T. Fukui:"Two-stage Kondo effect in a quantum dot at high magnetic field," Physical Review Letters vol.88, No. 12, pp.126803-1-126803-4 (2002).
  2. Toyonori. Kusuhara, Fumito Nakajima, Junichi Motohisa and Takashi Fukui: " Formation of InAs Dots on AlGaAs Ridge Wire Structures by Selective Area MOVPE Growth," Japanese Journal of Applied Physics Part 1 vol.41, No. 4B, pp.2508-2512 (2002).
  3. J. Motohisa, F. Nakajima, T. Fukui, W.G. van der Wiel, J.M. Elzerman, and S. De Franceschi, and L. P. Kouwenhoven: " Fabrication and Low-Temperature Transport Properties of Selectively Grown Dual-Gated Single-Electron Transistors," Applied Physics Letters vol.80, No. 15, pp.2797-2799 (2002).
  4. F. Nakajima, Y. Ogasawara, J. Motohisa and T. Fukui ; "Two-way current switch using Coulomb blockade in GaAs quantum dots by selective area metalorganic vapor phase epitaxy", Physica E vol.13, No. 2-4, pp.703-707 (2002).
  5. Masashi Akabori, Junichiro Takeda, Junichi Motohisa and Takashi Fukui; "Selective area MOVPE growth of two-dimensional photonic crystals having an air-hole array and its application to air-bridge-type structures", Physica E vol.13, No. 2-4, pp.446-450 (2002).
  6. T. Ishihara, S. Lee, M. Akabori, J. Motohisa and T. Fukui; "Dependence on In content of InxGa1-xAs quantum dots grown along GaAs multiatomic steps by MOVPE", Journal of Crystal Growth vol.237-239, No. Part 2, pp.1476-1480 (2002).
  7. Junichiro Takeda, Masashi Akabori, Junichi Motohisa and Takashi Fukui; "Formation of AlxGa1-xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE", Applied Surface Science vol.190, No. 1-4, pp.236-241 (2002).
  8. J. Motohisa, F. Nakajima, and T. Fukui; "Formation of Nano-Scale Heterointerfaces by Selective Area Metalorganic Vapor Phase Epitaxy and Their Applications", Applied Surface Science vol.190, No. 1-4, pp.184-190 (2002).
  9. J. Motohisa, W.G. van der Wiel, J.M. Elzerman, S. De Franceschi, F. Nakajima, Y. Ogasawara, T. Fukui, and L. P. Kouwenhoven; "Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy", Physica E vol.13, No. 2-4, pp.687-690 (2002).
  10. H. J. Kim, J. Motohisa and T. Fukui: "Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001)GaAs substrates," Applied Physics Letters vol.81, No. 27, pp.5147-5149 (2002).
2001
  1. W.G. van der Wiel, S. De Franceschi, J.M. Elzerman, S. Tarucha, L.P. Kouwenhoven, J. Motohisa, F. Nakajima, T. Fukui; "Two-stage Kondo effect in a quantum dot at high magnetic field", cond-mat/0110432 (2001).
  2. Fumito Nakajima, Yuu Ogasawara, Junichi Motohisa, and Takashi Fukui; "GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices", J. Appl. Phys. 90 (2001) 2606.
  3. Sangyoru Lee, Masashi Akabori, Takahiro Shirahata, Kenji Takada, Junichi Motohisa, and Takashi Fukui; "The Initial Stage of InGaAs Growth by MOVPE on Multiatomic-Stepped GaAs Structures", J. Cryst. Growth 231 (2001) 75.
  4. Masashi Akabori, Junichi Motohisa and Takashi Fukui; "Anisotropic magneto-transport properties of 70nm-period lateral surface superlattices in high magnetic fields", Conference Proceedings of 25th International Conference on the Physics of Semiconductors (2001) .
  5. Masashi Akabori, Junichi Motohisa and Takashi Fukui; "Formation of 0.5 $¥mu$m-Period GaAs Network Structures for Two-Dimensional Photonic Crystals by Selective Area Metal-Organic Vapor Phase Epitaxy", IEEE Conference Proceedings of 27th International Symposium on Compound Semiconductors (2001) .
  6. Haiyan An, Junichi Motohisa, and Takashi Fukui; "Optical anisotropy in InAs quantum dots formed on GaAs pyramids", Jpn. J. Appl. Phys. pt.1 40 (2001) 2312.
  7. Junichi Motohisa and Haiyan An; "Optical Properties and Carrier Relaxation in InAs Quantum Dots Selectively Formed on GaAs Pyramids", Conference Proceedings of 25th International Conference on the Physics of Semiconductors (2001) .
  8. I. Ishii, O. Matsuda, T. Fukui, J. J. Baumberg and O.B. Wright; "Generation and Detection of Picosecond Acoustic Phonon Pulses in a Double GaAs/Al$_{0.3}$Ga$_{0.7}$As Quantum Well Structures", Conference Proceedings of 25th International Conference on the Physics of Semiconductors (2001) .
  9. Tomonori Terasawa, Fumito Nakajima, Junichi Motohisa and Takashi Fukui ; "Lateral Thickness Modulation of InGaAs Layers on GaAs in Selective Area Metalorganic Vapor Phase Epitaxy", J. Cryst. Growth 223 (2001) 523.
  10. Haiyan An, Junichi Motohisa, and Takashi Fukui; "Optical anisotropy in InAs quantum dots formed on GaAs pyramids", Jpn. J. Appl. Phys. pt.1 40 (2001) 2312.
2000
  1. J. Motohisa, C. Tazaki, M. Akabori and T. Fukui; "Incorporation Mechanism of Si During Delta-Doping in GaAs Singular and Vicinal Surfaces", J. Cryst. Growth 221 (2000) 47.
  2. C. K. Hahn, J. Motohisa and T. Fukui; "Position and Number Control of Self-Assembled InAs Quantum Dots by Selective Area Metal Organic Vapor Phase Epitaxy", J. Cryst. Growth 221 (2000) 599.
  3. Toshifumi Harada, Yasuhiro Oda, Junichi Motohisa and Takashi Fukui; "Novel Nano-Faceting Structures Grown on Patterned Vicinal (110) GaAs Substrates by Metal-Organic Vapor Phase Epitaxy (MOVPE)", Jpn. J. Appl. Phys. pt.1 39 (2000) 7090.
  4. F. Nakajima, J. Motohisa and T. Fukui; "Self-Formed Quantum Nano-Structures by Selective Area MOVPE and Their Application to GaAs Single Electron Devices", Appl. Surf. Sci. 162--163 (2000) 650.
  5. H. An and J. Motohisa; "Optical Properties of InAs Quantum Dots Formed on GaAs Pyramids", Appl. Phys. Lett. 77 (2000) 385.
  6. C. K. Hahn, J. Motohisa and T. Fukui; "Formation of Single and Double Self-Organized InAs Quantum Dot by Selective Area Metal-Organic Vapor Phase Epitaxy", Appl. Phys. Lett. 76 (2000) 3947.
  7. M. Akabori, J. Motohisa and T. Fukui; "Large Positive Magnetoresistance in Periodically Modulated Two-Dimensional Electron GaAs Formed on Self-Organized GaAs Multiatomic Steps", Physica E 7 (2000) 766.
  8. J. Motohisa, C. Tazaki, T. Irisawa, M. Akabori and T. Fukui; "Selective Incorporation of Si along Step Edges During Delta-Doping on MOVPE-Grown GaAs (001) Vicinal Surfaces", J. Elec. Mat 29 (2000) 140.
  9. Y. Oda and Takashi Fukui; "Natural Formation of Square Scale Structures on Patterned Vicinal Substrates by MOVPE: Application to the Fabrication of Quantum Structures", Inst. Phys. Conf. Ser. 166 (2000) 191.
  10. M. Akabori, K. Yamatani, J. Motohisa and T. Fukui; "Transport through Quasi 1DEG Channels Having Periodic Potential Modulation Induced by Self-Organized GaAs Multiatomic Steps ", Inst. Phys. Conf. Ser. 166 (2000) 215.
  11. C. K. Hahn, J. Motohisa and T. Fukui; "Formation of Single and Double Self-Organized InAs Quantum Dot by Selective Area Metal-Organic Vapor Phase Epitaxy", Appl. Phys. Lett. 76 (2000) 3947.
1999
  1. Y. Aritsuka, T. Umeda, J. Motohisa and T. Fukui; "Self-Limited GaAs Wire Growth by MOVPE and Application to InAs Quantum Dot Array", Mat. Res. Soc. Symp. Proc. 570 (1999) 97.
  2. T. Ogawa, M. Akabori, J. Motohisa and T. Fukui; "Surface deformation phenomena induced by electron-beam irradiation in strained InGaAs/AlGaAs layers on GaAs (100) and (311)B substrates", Physica B 270 (1999) 313.
  3. T. Ogawa, M. Akabori, J. Motohisa and T. Fukui; "Self organization in InGaAs/GaAs quantum disk structures on GaAs (311)B substrates", Microelectronic Engineering 47 (1999) 231.
  4. T. Fukui, F. Nakajima, K. Kumakura and J. Motohisa; "Quantum Dots Fabricated by Selective Area MOVPE and Their Application to Single Electron Devices", Bull. Mater. Sci. 22 (1999) 531.
  5. K. Hayakawa, K. Kumakura, J. Motohisa and T. Fukui; "AlGaAs nano-meter scale network structures fabricated by selective area MOVPE", Inst. Phys. Conf. Ser. 162 (1999) 415.
  6. 福井孝志、本久順一; "MOVPE法によるGaAs系ナノ構造の自己形成", 応用電子物性分科会誌 5 (1999) 78.
  7. K. Yamatani, M. Akabori, J. Motohisa and T. Fukui; "Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps", Jpn. J. Appl. Phys. pt.1 38 (1999) 2562.
  8. T. Ogawa, M. Akabori, J. Motohisa and T. Fukui; "Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AlGaAs Layers on GaAs (100) and (311)B Substrates", Jpn. J. Appl. Phys. pt.1 38 (1999) 1040.
  9. F. Nakajima, K. Kumakura, J. Motohisa and T. Fukui; "GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits", Jpn. J. Appl. Phys. pt.1 38 (1999) 415.
1998
  1. M. Akabori, J. Motohisa and T. Fukui; "Formation and Characterization of Modulated Two-Dimensional Electron Gas on GaAs multiatomic Steps grown by Metalorganic Vapor Phase Epitaxy", J. Cryst. Growth 195 (1998) 579.
  2. Y. Oda and T. Fukui; "Natural Formation of Multiatomic Steps on Patterned Vicinal Substrates by MOVPE and Application to GaAs QWR Structures", J. Cryst. Growth 195 (1998) 6.
  3. 福井孝志; "自己組織化論争（巻頭言）", 表面科学 16 (1998) 607.
  4. M. Kawase, Y. Ishikawa and T. Fukui; "Atomic Structure of (113)B GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy", Appl. Surf. Sci. 130-132 (1998) 457.
  5. K. Kumakura, J. Motohisa and T. Fukui; "Transport Characterization of GaAs Quantum Dots Connected with Quantum Wires Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy", Solid State Electron. 42 (1998) 1227.
  6. J. Motohisa, J. J. Baumberg, A. P. Heberle and J. Allam; "Anomalous Excitation Intensity Dependence of Photoluminescence from InAs Self-Assembled Quantum Dots", Solid State Electron. 42 (1998) 1335.
  7. S. Hara, J. Motohisa and T. Fukui; "Optical Characterization and Laser Operation of InGaAs Quantum Wires on GaAs Multiatomic Steps", Solid State Electron. 42 (1998) 1233.
  8. 福井孝志、原真二郎、熊倉一英; "III-V族化合物半導体低次元量子構造の作製", 応用物理 67 (1998) 776.
  9. Y. Ishikawa, N. Tsurumi, T. Fukui and H. Hasegawa; "Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi Level pinning on GaAs (110) surfaces grown by molecular beam epitaxy", J. Vac. Sci. and Technol. B 16 (1998) 2387.
  10. S. Chakraborty, T. Yoshida, T. Hashizume and H. Hasegawa; "Formation of ultrathin oxynitride layers on Si(100) by low-temperature electron cyclotron resonance N$_2$O plasma oxynitridation process", J. Vac. Sci. and Technol. B 16 (1998) 2159.
  11. T. Umeda, K. Kumakura, J. Motohisa and T. Fukui; "InAs Quantum Dot Formation on GaAs Pyramids by Selective Area MOVPE", Physica E 2 (1998) 714.
  12. S. Hara, J. Motohisa and T. Fukui; "Self-Organised InGaAs Quantum Wire Lasers on GaAs Multi-Atomic Steps", Electron. Lett. 34 (1998) 894.
  13. K. Kumakura, J. Motohisa and T. Fukui; "Fabrication and Transport Characterization of GaAs Quantum Dots Connected with Quantum Wires fabricated by Selective Area Metalorganic Vapor Phase Epitaxy", Physica E 2 (1998) 809.
  14. B. Adamowicz, K. Ikeya, M. Mutoh, T. Saitoh, H. Fujikura and H. Hasegawa; "Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer", Physica E 2 (1998) 261.
  15. T. Irisawa, J. Motohisa, M. Akabori and T. Fukui; "Delta-Doping and the Possibility of Wirelike Incorporation of Si on GaAs Vicinal Surfaces and in Metalorganic Vapor Phase Epitaxial Growth", Jpn. J. Appl. Phys. pt.1 37 (1998) 1514.
  16. N. Tsurumi, Y. Ishikawa, T. Fukui and H. Hasegawa; "In-situ Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs (001)-$(2¥times4)$ Surface", Jpn. J. Appl. Phys. pt.1 37 (1998) 1501.
1997
  1. Junya Ishizaki, Yasuhiko Ishikawa, Kazunobu Ohkuri, Makoto Kawase and Takashi Fukui; "Ultra High Vacuum Scanning Tunneling Microscope Observation of Vicinal (001) GaAs Surface and (117)B GaAs Surface Grown by Metalorganic Vapor Phase Epitaxy", Appl. Surf. Sci. 113/114 (1997) 343.
  2. Yasuhiko Ishikawa, Takashi Fukui and Hideki Hasegawa; "Kink Defects and Fermi Level Pinning on $(2¥times 2)$ Reconstructed Molecular Beam Epitaxially Grown Surfaces of GaAs and InP Studied by Ultrahigh-Vacuum Scanning Tunneling Microscopy and x-ray Photoelectron Spectroscopy", J. Vac. Sci. and Technol. B 15 (1997) 1163.
  3. Jun-ya Ishizaki, Yasuhiko Ishikawa and Takashi Fukui; "Ultra High Vacuum Scanning Tunneling Microscopy Observation of Multilayer Step Structure on GaAs and AlAs Vicinal Surface Grown by Metalorganic Vapor Phase Epitaxy", Proceedings of Material Research Society Symposium (Mat. Res. Soc. Symp. Proc.) 448 (1997) 95.
  4. Makoto Sakuma, Takashi Fukui, Kazuhide Kumakura and Junichi Motohisa; "Selective Growth of MOVPE on AlGaAs/GaAs Patterned Substrates for Quantum Nano-Structures", Proceedings of Material Research Society Symposium (Mat. Res. Soc. Symp. Proc.) 448 (1997) 259.
  5. Y.~Ishikawa, T.~Fukui and H.~Hasegawa; "Missing-Dimer Structures and Their Kink Defects on Molecular Beam Epitaxially Grown $(2¥times 4)$ Reconstructed (001) InP and GaAs Surfaces Studied by Ultrahigh-Vacuum Tunneling Microscopy", Jpn. J. Appl. Phys. pt.1 36 (1997) 1749.
  6. M.~Akabori, J.~Motohisa, T.~Irisawa, S.~Hara, J.~Ishizaki and T.~Fukui; "A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy: Investigation of Transport Properties", Jpn. J. Appl. Phys. pt.1 36 (1997) 1966.
  7. Kazuhide Kumakura, Junichi Motohisa and Takashi Fukui; "Formation and Characterization of Coupled Quantum Dots (CQDs) by Selective Area Metalorganic Vapor Phase Epitaxy", J. Cryst. Growth 170 (1997) 700.
  8. Shinjiro Hara, Junichi Motohisa and Takashi Fukui; "Formation and Characterization of InGaAs Strained Quantum Wires on GaAs Multiatomic Steps Grown by Metalorganic Vapor Phase Epitaxy", J. Cryst. Growth 170 (1997) 579.
1996年以前
  1. T.~Fukui, S.~Hara, J.Ishzaki, K.~Ohkuri and J.~Motohisa; "Coherent multiatomic step formation on GaAs (001) vicinal surfaces by MOVPE and its application to quantum well wires", Inst. Phys. Conf. Ser. 145 (1996) 919.
  2. J.~Motohisa, M.~Akabori, S.~Hara, J.~Ishizaki, K.~Ohkuri and T.~Fukui; "Theoretical and Experimental Investigation of An Electron Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces", Physica B 227 (1996) 295.
  3. R.~N¥"otzel, J.~Temmyo, A.~Kozen ,T.~Tamamura, T.~Fukui and H.~Hasegawa; "Self-Organized Growth of Quantum-Dot Structures", Solid State Electron. 40 (1996) 777.
  4. T.~Fukui, K.~Kumakura, K.Nakakoshi and J.~Motohisa; "Pyramidal Quantum Dot Structures by Self-limited Selective Area Metalorganic Vapor Phase Epitaxy", Solid State Electron. 40 (1996) 799.
  5. (1996) 448.
  6. R.~N¥"otzel, J.~Temmyo T.~Tamamura T.~Fukui and H.~Hasegawa; "Self-Organized Quantum Dots", Europhysics News 27 (1996) 148.
  7. K.~Ohkuri, J.~Ishizaki, S.~Hara and T.~Fukui; "Multiatomic step formation on GaAs(001) vicinal surfaces during thermal treatment", J. Cryst. Growth 160 (1996) 235.
  8. Y.~Ishikawa, K.~Nakakoshi and T.~Fukui; "Novel In Situ Optical Monitoring Method for Selective Area Metalorganic Vapor Phase Epitaxy", J. Cryst. Growth 167 (1996) 434.
  9. J.~Ishizaki, K.~Ohkuri, and T.~Fukui; "Simulation and observation of the step bunching process grown on GaAs(001) vicinal surface by metalorganic vapor phase epitaxy", Jpn. J. Appl. Phys. pt.1 35 (1996) 1280.
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