2007

1. E. Sano and T. Otsuji, “HEMT-based nanometer devices toward tera-hertz era,” Int. J. High Speed Electronics and Systems, vol. 17, no. 3, pp.509-520, 2007.
2. S. Taga, K. Inafune, and E. Sano, “Analysis of Smith-Purcell radiation in optical region,” Optics Express, vol. 15, pp. 16222-16229, 2007.
3. E. Sano, “Micromagnetic simulation of coupled magnetic oscillators driven by spin-transfer torque,” Jpn. J. Appl. Phys., vol. 46, no. 46, pp.L1123-L1125, 2007.
4. Y. Moubarak Meziani, T. Otsuji, M. Hanabe, and E. Sano, “Room temperature generation of terahertz radiation from a grating-bicoupled plasmon-resonant emitter: Size effect,” Appl. Phys. Lett., vol. 90, no. 6, pp. 061105-1-3, 2007.
5. T. Otsuji, Y. Moubarak Meziani, M. Hanabe, T. Nishimura, and E. Sano, “Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant emitter,” Solid-State Electron., vol. 51, pp. 1319-1327, 2007.
   
6. K. Narahara, T. Nakamichi, T. Otsuji, and E. Sano, “Development of solitons in composite right- and left-handed transmission lines periodically loaded with varactors with symmetrical capacitance-voltage characteristics,” Jpn. J. Appl. Phys., vol. 46, no. 5A, pp. 3123-3125, 2007.
   
7. K. Narahara, T. Nakamichi, T. Suemitsu, T. Otsuji, and E. Sano, “Development of solitons in composite right- and left-handed transmission lines periodically loaded with Schottky varactors,” J. Appl. Phys., vol. 102, pp. 024501-1-4, 2007
   
8. M. Makihara, M. Ikebe, and E. Sano, “Evaluation of digitally controlled PLL by clock-period comparison,” IEICE Trans. Electron., vol. E90-C, no. 6, pp. 1307-1310, 2007.
   
9. M. Hanabe, Y. Moubarak Meziani, T. Otsuji, E. Sano, and T. Asano, “Possibility of terahertz injection-locked oscillation in an InGaP/InGaAs/GaAs two-dimensional plasmon-resonant photomixer,” IEICE Trans. Electron., vol. E90-C, no. 5, pp. 949-954, 2007.
   
10. Y. Moubarak Meziani, M. Hanabe, T. Otsuji, and E. Sano, “Threshold behavior of photoinduced plasmon-resonant self-oscillation in a new interdigitated grating gates device,” Jpn. J. Appl. Phys., vol. 46, no. 4B, pp. 2409-2412, 2007.
11. H. Hasegawa and M. Akazawa; "Hydrogen Sensing Characteristics and Mechanism of Pd/AlGaN /GaN Schottky Diodes Subjected to Oxygen Gettering," J. Vac. Sci. Technol. B, Vol.25, No.4, pp.1495-1503 (2007).
    
12. M. Akazawa and H. Hasegawa; "Formation of Ultrathin SiNx/ Si Interface Control Double Layer on (001) and (111) GaAs Surfaces for Ex-situ Deposition of High-k Dielectrics," J. Vac. Sci. Technol. B, Vol.25, No.4, pp.1481-1490 (2007).
    
13. M. Akazawa and H. Hasegawa; "Sensing Dynamics and Mechanism of a Pd/AlGaN /GaN Schottky Diode Type Hydrogen Sensor," phys. stat. sol. (c), Vol. 4, No. 7, pp.2629-2633 (2007).
    
14. M. Akazawa and H. Hasegawa; "MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices," Journal of Crystal Growth, Vol. 301-302, pp.951-954 (2007).
    
15. M. Akazawa, H. Hasegawa and R. Jia; " In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors," physica status solidi (a) Vol. 204, No. 4, pp.1034-1040 (2007).
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2006

1. T. Otsuji, Y. Moubarak Meziani, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, “Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems,” Appl. Phys. Lett., vol. 89, no. 26, pp. 263502-1-3, 2006.
   
2. K. Narahara, T. Otsuji, and E. Sano, “Generation of electrical short pulse using Schottky line periodically loaded with electronic switches,” J. Appl. Phys., vol. 100, no. 2, pp. 024511 1-5, 2006.
   
3. T. Nishimura, M. Hanabe, M. Miyamoto, T. Otsuji, and E. Sano, “Terahertz frequency multiplier operation of two dimensional plasmon resonant photomixer,” IEICE Trans. Electron., vol. E89-C, no. 7, pp. 1005-1011, 2006.
   
4. M. Hanabe, T. Nishimura, M. Miyamoto, T. Otsuji, and E. Sano, “Structure-sensitive design for wider tunable operation of terahertz plasmon-resonant photomixer,” IEICE Trans. Electron., vol. E89-C, no. 7, pp. 985-992, 2006.
   
5. K. Inafune, E. Sano, H. Matsuzaki, T. Kosugi, and T. Enoki, “W-band active integrated antenna oscillator based on full-wave design methodology and 0.1-mm gate InP-based HEMTs,” IEICE Trans. Electron., vol. E89-C, no. 7, pp. 954-958, 2006.
   
6. K. Narahara, T. Otsuji, and E. Sano, “Pulse compression by quasi-steady propagation along switch lines,” Jpn. J. Appl. Phys., vol. 45, no. 7, pp. 5692-5695, 2006.
   
7. ] E. Sano, “A chaotic wireless communication system based on collective synchronization among wireless nodes,” IEICE Electronics Express, vol. 3, no. 12, pp. 262-268, 2006.
   
8. T. Otsuji, M. Hanabe, T. Nishimura, and E. Sano, “A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure,” Optics Express, vol. 14, no. 11, pp. 4815-4825 (2006).
   
9. T. Tanaka, M. Akazawa, E. Sano, M. Tanaka, F. Miyamaru, and M. Hangyo, “Transmission Characteristics through Two-Dimensional Periodic Hole Arrays Perforated in Perfect Conductors,” Jpn. J. Appl. Phys., vol. 45, no. 5A, pp. 4058-4063 (2006).
   
10. K. Inafune and E. Sano, “Theoretical investigation of artificial magnetic conductors using an effective medium model and finite difference time domain method,” Jpn. J. Appl. Phys., vol. 45, no. 5A, pp. 3981-3987 (2006).
    
11. M. Akazawa, N. Shiozaki and H. Hasegawa; “X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces,” Journal de Physique IV, Vol. 132, pp. 95-99 (2006).
    
12. N. Shiozaki, T. Sato, M. Akazawa and H. Hasegawa; “Precisely Controlled Anodic Etching for Processing of GaAs-based Quantum Nanostructures and Devices,” Journal de Physique IV, Vol. 132, pp. 249-253 (2006).
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2005

1. M. Akazawa, Y. Yamazaki, and E. Sano, “Terahertz transmission property of a thin metal hole-array filter,” Japan J. Appl. Phys., vol. 44, no. 49, pp. L1481-L1483 (2005).
   
2. E. Sano, “Numerical investigation of optical chaotic multiplexing communications,” Japan J. Appl. Phys., vol. 44, no. 8, pp. 6095-6097 (2005).
   
3. M. Tanaka, F. Miyamaru, M. Hangyo, T. Tanaka, M. Akazawa, and E. Sano, “Effect of a thin dielectric layer on terahertz transmission characteristics for metal hole arrays,” Optics Lett., vol. 30, no. 10, pp. 1210-1212 (2005).
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2004

1. T. Tanaka, M. Akazawa, and E. Sano; "Terahertz Wave Filter from Cascaded Thin-Metal-Film Meshes with a Triangular Array of Hexagonal Holes," Jpn. J. Appl. Phys., Vol. 43, Pt. 2, No. 2B, pp. L287-L289 (2004).
   
2. T. Hashizume, S. Anantathanasarn, N. Negoro, E. Sano, H. Hasegawa, “Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers,” Japan J. Appl. Phys., vol. 43, no. 6B, pp. L777-L779, 2004.
   
3. H. Nosaka, E. Sano, K. Ishii, M. Ida, K. Kurishima, S. Yamahata, T. Shibata , H. Fukuyama, M. Yoneyama, T. Enoki, and M. Muraguchi, “A 39-to-45-Gbit/s multi-data-rate clock and data recovery circuit with a robust lock detector,” IEEE J. Solid-State Circuits, vol. 39, pp. 1361-1365, 2004.
   
4. E. Sano, K. Inafune, and M. Akazawa, “RF CMOS inductor shielded by a high-impedance surface,” IEICE Electronics Express, vol. 1, no. 8, pp. 232-236, 2004.
   
5. E. Sano, “Simulation of nanometer-scale semiconductor devices considering quantum effects,” Int. J. RF and Microwave Computer-Aided Engineering, vol. 14, no. 3, pp. 283-289, 2004.
   
6. 佐野栄一、”テラヘルツ発振を目指したデバイス技術の展望,” 信学会論文誌, vol. J87-C, no. 5, pp. 413-423, 2004.
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2003

1. K. Ishii, H. Nosaka, M. Ida, K. Kurishima, S. Yamahata, T. Enoki, T. Shibata, and E. Sano; "4-bit multiplexer/demultiplexer chip set for 40-Gbit/s optical communication systems," IEEE Trans. on Microwave Theory & Techniques, Vol. 51, No. 11, pp. 2181-2187 (2003).
   
2. E. Sano; "A theoretical comparison of strained-Si-on-insulator metal-oxide-semiconductor field-effect transistors and conventional Si-on-insulator metal-oxide-semiconductor field-effect transistors using a drift-diffusion-based simulator," Jpn. J. Appl. Phys., Vol. 42, Pt. 1, No. 10, pp.6346-6353 (2003).
   
3. E. Sano; "Analytical expressions for maximum operating frequencies of emitter-coupled logic and source-coupled FET logic toggle flip-flops," IEICE Trans. Electron., Vol. E86-C, No. 9, pp. 1879-1885 (2003).
   
4. E. Sano; "Simulation of ultra-thin body silicon-on-insulator MOSFETs based on drift-diffusion model incorporating an effective potential," Jpn J. Appl. Phys., Vol. 42, Pt. 1, No. 8, pp. 4987-4991 (2003).
   
5. E. Sano; "Simulation of nanoscale InAlAs/InGaAs high electron mobility transistors based on drift-diffusion model incorporating an effective potential," JapanJ. Appl. Phys., Vol. 42, Pt. 1, No. 7A, pp. 4261-4263 (2003).
   
6. M. Akazawa; "Adiabatic Switching by Quasistatic Operation of Single-Electron-Tunneling Devices," Electronics and Communications in Japan, Part II: Electronics, Vol. 86, No.12, pp.1-9 (2003).
   
7. 赤澤正道；「単電子デバイスの準静的動作による断熱的スイッチング」，電子情報通信学会和文論文誌, J86-C, No.7, pp. 718-725 (2003).
   
8. M. Akazawa and H. Hasegawa; "A UHV contactless capacitance-voltage characterization method applicable to semiconductor layers grown on insulating substrates, " phys. stat. sol. (a), Vol. 195, No. 1, pp. 248-254 (2003).
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2002

1. K. Ishii, H. Nosaka, M. Ida, K. Kurishima, T. Enoki, T. Shibata, and E. Sano; "High-input-sensitivity, low-power 43 gbit/s decision circuit using InP/InGaAs DHBTs," Electron. Lett. 38 (12), pp. 557-558 (2002).
   
2. E. Sano; "Simulation of Carrier Transport across Heterojunctions Based on Drift-Diffusion Model Incorporating an Effective Potential," Jpn. J. Appl. Phys., Vol. 41, Pt. 2, No. 11B, pp. L1306-L1308 (2002).
   
3. K. Ishii, H. Nosaka, H. Nakajima, K. Kurishima, M. Ida, N. Watanabe, Y. Yamane, E. Sano, and T. Enoki; "Low-power 1 : 16 DEMUX and one-chip CDR with 1 : 4 DEMUX using InP-InGaAs heterojunction bipolar transistors," IEEE J Solod-St. Circ. 37 (9), pp. 1146-1151 (2002).
   
4. E. Sano; "Monte Carlo Simulation of InP/InGaAs Heterojunction Bipolar Transistors Considering Quantum Effects through an Effective Potential,", Jpn. J. Appl. Phys., Vol. 41, Pt. 2, No. 9A/B, pp. L981-L982 (2002).
   
5. Y.Suda, T. Ono, M. Akazawa, Y. Sakai, J. Tsujino, and N. Homma; "Preparation of carbon nanoparticles by plasma-assisted pulsed laser deposition method -- size and binding energy dependence on ambient gas pressure and plasma condition," Thin Solid Films, No. 415, pp. 15-20 (2002).
   
6. T. Ono, Y. Suda, M. Akazawa, Y. Sakai, and K. Suzuki;"Effects of Oxygen and Substrate Temperature on Properties of Amorphous Carbon Films Fabricated by Plasma-Assisted Pulsed Laser Deposition Method," Jpn. J. Appl. Phys., Vol. 41, Pt.1, No. 7A, pp. 4651-4654 (2002).
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2001

1. K. Murata, K. Sano, E. Sano, S. Sugitani, and T. Enoki;"Fully monolithic integrated 43 Gbit/s clock and data recovery circuit in InPHEMT technology," Electron. Lett. 37 (20), pp. 1235-1237 (2001).
   
2. K. Sano, K. Murata, T. Otsuji, T. Akeyoshi, N. Shimizu, and E. Sano; "An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode," IEEE J. Solid-St. Circ. 36 (2), pp. 281-289 (2001).
   
3. E. Sano; "High-speed lightwave communication ICs based on III-Vcompound semiconductors," IEEE Commun. Mag. 39 (1), pp.154-158 (2001).
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2007

1. Y. M. Meziani, M. Hanabe, T. Otsuji, and E. Sano, "Bolometer detection of terahertz radiation from new grating gate device," The 15th Int. Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIC-15) Abstracts (Tokyo, Japan), July 23-27, 2007, p. 113.
2. Y. M. Meziani, M. Hanabe, A. Koizumi, T. Ishibashi, T. Uno, T. Otsuji and E.Sano, "Generation of terahertz radiation from a new InGaP/InGaAs/GaAs double grating gate HEMT device," Conference on Lasers and Elctro-Optics 2007 (Baltimore MD), May 2007, CThI7.
3. T. Otsuji, T. Suemitsu, Y. M. Meziani, and E. Sano, "Terahertz emission from high electron mobility transistors stimulated by photo-induced plasmon instability (invited)," Virtual Conf. on Nanoscale Science and Technology (VC-NST) Abstract (Fayetteville, AR), Oct. 23, 2007, p. 3.
4. T. Otsuji, Y. M. Meziani, T. Suemitsu, M. Hanabe, and E. Sano, "Terahertz emission from 2-dimensional plasmons in HEMT's stimulated by optical signals (invited)," Proc. Int. Symp. on Compound Semiconductors (ISCS) (Kyoto, Japan), Oct. 15, 2007, TuBIII-6, p. 144.
5. T. Otsuji, Y.M. Meziani, M. Hanabe, T. Nishimura, E. Sano, "Room temperature terahertz emission from plasmonresonant high-electron mobility transistors stimulated by optical signals (invited)," Proc. SPIE, vol. 6772, 677220M, pp. 1-7, 2, Sept. 11, Boston, 2007.
6. Y. M. Meziani, T. Otsuji, and E. Sano, "Emission of terahertz radiation from an interdigitated grating gates HEMT," Dig. IRMMW/THz 2007, (Cardiff, UK), Sept. 2007, pp. 466-467
7. H. Handa, Y. M. Meziani, M. Hanabe, T. Otsuji, and E. Sano, "Generation of terahertz radiation from a dual grating gates HEMT," 7th Topical Workshop on Heterostructure Microelectronics (TWHM) Abstracts (Chiba, Japan), Aug. 21-24, 2007, pp. 63-64.
8. Y. M. Meziani, M. Hanabe, A. Koizumi, T. Otsuji, and E. Sano, “Terahertz Emission from InGaP/InGaAs/GaAs Double Grating Gate HEMT Device,” in Optical Terahertz Science and Technology 2007 Technical Digest (The Optical Society of America, Washington, DC) (Orlando FL), March 18-21, 2007, pp.MD12-1-3.
9. Y. M. Meziani, M. Hanabe, A. Koizumi, T. Otsuji and E. Sano, “Room Temperature Emission of Terahertz Radiation from a New Plasmon Resonant Emitter,” Technical Digest of the Tenth International Symposium on Contemporary Photonics Technology, (Tokyo, Japan), Jan. 2007, Paper No. J-3.
   
10. T. Suemitsu, Y. M. Meziani, Y. Hosono, M. Hanabe, T. Otsuji, and E. Sano, “Novel plasmon-resonant terahertz-wave emitter using a double-decked HEMT structure,” 65th Device Research Conf. (South Bend, Indiana), June 2007, pp. 157-158.
    
11. K. Inafune, H. Osabe, and E. Sano, “Impact of frequency-selective high-impedance surface reflectors on directivity of ultra-wideband monopole antennas,” International Symposium on Antennas and Propagation (Niigata, Japan), Aug. 2007, pp. 1446-1449.
    
12. M. Ikebe, D. Ueo, H. Osabe, K. Inafune, E. Sano, M. Koutani, M. Ikeda, and K. Mashiko, “7-GHz CMOS RF front-end monolithically integrated with inverted-F antenna for wireless sensor system,” 14th International Conference on Solid-state Sensors, Actuators and Microsystems (Lyon, France), June 2007, pp. 61-64.
    
13. E. Sano and K. Inafune, “Recent progress in devices and circuit technologies for millimeter-wave applications (invited),” 2007 Int’l Conf. Indium Phosphide and Related Materials (Matsue, Japan), May 2007, pp. 523-526.
    
14. Y. M. Meziani, M. Hanabe, A. Koizumi, T. Otsuji and E. Sano, " Self oscillation of the plasma waves in a dual grating gates HEMT device,” 2007 Int’l Conf. Indium Phosphide and Related Materials (Matsue, Japan), May 2007, pp. 534-537.
    
15. M. Akazawa and H. Hasegawa; "Silicon Interface Control Layer Based Surface Passivation Method and Related High-k MIS Gate Stack for GaAs Nanowire MISFETs," International Symposium on Advanced nanodevices and Nanotechnology (ISANN2007, Waikoloa, Hawaii, USA, December 2-7, 2007).
16. M. Akazawa and H. Hasegawa; "GaAs High-k Dielectric MOS Structure Having Silicon Interface Control Layer," Abstracts of The 34th International Symposium on Compound Semiconductor (iscs2007, Kyoto, Japan, October 15-18, 2007), p.277.
    
17. M. Akazawa and H. Hasegawa; "Sensing and current transport mechanisms of a high performance Pd/AlGaN/GaN Schottky diode hydrogen sensor," Abstracts of 7th International Conference on Nitride Semiconductor (ICNS-7, Las Vegas, Nevada, USA, September 16-21, 2007) p.51.
    
18. H. Hasegawa and M. Akazawa; "Dynamic behavior of metal contacts formed on AlGaN/GaN heterostructure, " Abstracts of 7th International Conference on Nitride Semiconductor (ICNS-7, Las Vegas, Nevada, USA, September 16-21, 2007) p.68.
    
19. H. Hasegawa and M. Akazawa; "Interface Control Technology for Surface Passivation of III-V Semiconductor Nanostructures (invited)," 5th International Workshop on Semiconductor Surface Passivation (Zakopane, CRC Geovita, Poland, September 16-19, 2007).
    
20. H. Hasegawa and M. Akazawa; "Surface passivation technology for III-V semiconductor nanoelectronics (invited)," 11th International Conference on the Formation of Semiconductor Interfaces (Manaus-Amazonas, Brazil, August 19-24, 2007).
    
21. M. Akazawa and H. Hasegawa; "Complete Removal of Fermi Level Pinning at High-k Dielectric/GaAs (001) and (111)B Interfaces by a Silicon Interface Control Layer," Abstracts of 2007 Electronic Material Conference (University of Notre Dame, South Bend, Indiana, USA, June 20-22, 2007) p.76.
    
22. H. Hasegawa and M. Akazawa; "Performance Enhancement and Sensing Mechanism of Pd/AlGaN/GaN Hydrogen Sensors Subjected to Oxygen Gettering," Abstracts of 2007 Electronic Material Conference (University of Notre Dame, South Bend, Indiana, USA, June 20-22, 2007 ) p.29.
    
23. H. Hasegawa and M. Akazawa; "Control of Schottky Interfaces of AlGaN/GaN system for hydrogen sensor applications (invited)," Abstract book of Symposium on Surface and Nano Science 2007 (SSNS’07, Appi, Iwate, Japan, January 23-26, 2007) I-2.
    
24. H. Hasegawa and M. Akazawa; "Hydrogen Response Characteristics and Mechanism of Pd/ AlGaN/ GaN Schottky Diodes Subjected to Oxygen Gettering," Abstract Book of 34th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-34, Salt Lake City, Utah, USA, January 14-18, 2007), 1page.
    
25. M. Akazawa and Hideki Hasegawa; "Growth Mechanism and Fermi Level Unpinning in Silicon Interface Control Layers for Surface Passivation of (001) and (111) GaAs and AlGaAs Surfaces," Abstract Book of 34th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-34, Salt Lake City, Utah, USA, January 14-18, 2007), 1page.
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2006

1. D. Ueo, H. Osabe, K. Inafune, M. Ikebe, E.. Sano, M. Koutani, M. Ikeda, and K. Mashiko, “7-GHz inverted-F antenna monolithically integrated with CMOS LNA,” 2006 Intl. Symposium on Intelligent Signal Processing and Communication Systems (Yonago, Japan), Dec. 2006, pp. 259-262.
   
2. E. Sano and T. Otsuji, “HEMT-based nanometer devices toward tera-hertz era (invited),” Int'l Workshop “Tera- and Nano-Devices: Physics and Modeling” (Aizu-Wakamatsu, Japan), Oct. 2006, pp. 48-49.
   
3. Y. M. Meziani, M. Hanabe, T. Otsuji and E. Sano, “Threshold behavior of photoresponse of plasma waves by new phomixer devices,” Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, (Yokohama, Japan), Sept. 2006, pp. 894-895.
   
4. M. Hanabe, T. Otsuji, Y. M. Meziani, E. Sano and T. Asano, “Terahertz emission of radiation produced by photoexcited instability of two-dimensional plasmons in an InGaP/InGaAs/GaAs heterostructure transistor,” Dig. the 2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, ,(Sendai, Japan), July 2006, pp. 291-295.
   
5. M. Hanabe, T. Otsuji, Y. M. Meziani, and E. Sano, “Possibility of Injection-Locked Emission of Terahertz Radiation from InGaP/InGaAs/GaAs Grating-Bicoupled Plasmon-Resonant Photomixer,” The Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics（IRMMW−THz2006） (Shanghai, China), Sept. 2006,
   
6. Y. M. Meziani, T. Otsuji, M. Hanabe, T. Ishibashi, T. Ueno, and E. Sano, “Emission of terahertz radiation from new grating-bicoupled HEMT device,” 14th International Symposium "Nanostructures: Physics and Technology" (St Petersburg, Russia), June 2006, pp. 336-337.
   
7. T. Otsuji, M. Hanabe, Y. M. Meziani, and E. Sano, “Terahertz emission of radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant photomixer,” 64th Device Research Conf. (University Park, PA), June 2006, pp. 193-194.
   
8. T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, “A Grating-bicoupled Plasmon-resonant Terahertz Emitter Fabricated with GaAs-based Heterostructure Metamaterial Systems,” 2006 Photonic Metamaterials (Grand Bahama Island, The Bahamas), June 2006, WD29.
   
9. Hideki Hasegawa and Masamichi Akazawa; "Understanding and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)," Extended abstract book of 5th Solid State Surfaces and Interfaces (SSSI2006, Smolenice Castle, Slovak Republic, November 19-24, 2006) pp.263-272.
   
10. Hideki Hasegawa and Masamichi Akazawa; "Sensing Dynamics and Mechanism of a Pd/AlGaN /GaN Schottky Diode Type Hydrogen Sensor," Technical Digest of International Workshop on Nitride Semiconductors (IWN2006, Kyoto, Japan, October 22-27, 2006) p.267.
    
11. Masamichi Akazawa and Hideki Hasegawa; "MBE Growth and In-Situ XPS Characterization of Silicon Interlayers on (111)B Surfaces for Passivation of GaAs Quantum Wire Devices, " Abstract Workbook of 14th International Conference on Molecular Beam Epitaxy (MBE2006, Tokyo, Japan, September 3-8, 2006) p.168.
    
12. Hideki Hasegawa, Kazushi Matsuo, Takeshi Kimura, Junji Kotani, Masamichi Akazawa and Tamotsu Hashizume; "Characterization and Control of AlGaN Schottky Diodes for Performance Enchancement of Hydrogen Sensors," Book of Abstracts of 8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC'06, C?diz, Spain, May 14- 17, 2006) p. 134.
    
13. Masamichi Akazawa, Hideki Hasegawa and Rui Jia; "In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors," Book of Abstracts of 8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC'06, C?diz, Spain, May 14- 17, 2006) p. 114.
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2005

1. T. Otsuji, M. Hanabe, T. Nishimura, N. Imamura, E. Sano and V. Ryzhii, “Widely-tunable terahertz plasmon-resonant photomixer based on heterostructure integrated microelectronics,” Abstracts of the ISSSP 35th Workshop on Physics and Technology of THz Photonics ( Erice, Italy, July 2005) p. 5.
   
2. M. Hanabe, T. Nishimura, T. Otsuji, and E. Sano, “Highly frequency-tunable terahertz plasmon-resonant photomixer with super-grating gate structure,” Abstracts of the Joint 30th International Conference on Infrared and Millimeter Waves & 13th International Conference on Terahertz Electronics (Williamsburg, VA, Sept. 2005) pp. 638-639.
   
3. T. Nishimura, M. Hanabe, M. Miyamoto, T. Otsuji, and E. Sano, “Terahertz frequency multiplier operation of 2-D plasmon-resonant photomixer,” 6th Topical Workshop on Heterostructure Microelectronics (Awaji Island, Japan, Aug. 2005) pp. 58-59.
   
4. M. Hanabe, T. Nishimura, M. Miyamoto, T. Otsuji, and E. Sano, “Structure-sensitive design for wider tunable operation of terahertz plasmon-resonant photomixer,” 6th Topical Workshop on Heterostructure Microelectronics (Awaji Island, Japan, Aug. 2005) pp. 52-53.
   
5. K. Inafune, E. Sano , H. Matsuzaki , T. Kosugi, and T. Enoki, “W-band active integrated antenna oscillator based on full-wave design methodology and 0.1-mm gate InP-based HEMT technology,” 6th Topical Workshop on Heterostructure Microelectronics (Awaji Island, Japan, Aug. 2005) pp. 24-25.
   
6. K. Inafune and E. Sano, “Multiband artificial magnetic conductors using stacked microstrip patch layers,” 2005 IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (Beijing, China, Aug. 2005) pp. 590-593.
   
7. N. Shiozaki, T. Sato, M. Akazawa and H. Hasegawa; “MBE Growth and Si-interlayer Based Surface Passivation of GaAs Quantum Wires,” Abstracts of The 29th Workshop on Compound Semiconductor Device and Integrated Circuits held in Europe (WOCSDICE2005, May 16-18, 2005, Cardiff), 2 pages.
   
8. M. Akazawa, N. Shiozaki and H. Hasegawa, “X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces,” Abstracts of 10th International Conference on the Formation of Semiconductor Interfaces (Aix-en-Provence, France, ICFSI-10, July 3-8, 2005) 1 page.
   
9. N. Shiozaki, T. Sato, M. Akazawa and H. Hasegawa; “Precisely Controlled Anodic Etching for Processing of GaAs-based Quantum Nanostructures and Devices,” Abstracts of 10th International Conference on the Formation of Semiconductor Interfaces (Aix-en-Provence, France, ICFSI-10, July 3-8, 2005), 1 page.
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2004

1. T. Otsuji, M. Hanabe, J. Shigenobu, S. Takahashi, and E. Sano,“A novel terahertz plasma-wave photomixer with resonant-cavity enhanced structure,” 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics (Karlsruhe, Germany) 2004, pp. 331-332.
   
2. E. Sano, “Challenges for terahertz integrated circuits,” 2004 RCIQE International Seminar for 21st Century COE Program: “Quantum Nanoelectronics for Meme-Media-Based Information Technologies (II)”, Sapporo, Japan, Feb. 2004, pp.95-100.
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2003

1. H. Nosaka, E. Sano, K. Ishii, M. Ida, K. Kurishima, S. Yamahata, and T. Shibata, “A 39-to-45-Gbit/s multi-data-rate clock and data recovery circuit with a robust lock detector,” VLSI Circuits Symp. Dig. (Kyoto), 2003, pp. 61-63.
   
2. K. Ishii, H. Nosaka, M. Ida, K. Kurishima, S. Yamahata, T. Enoki, T. Shibata, and E. Sano, “4-bit multiplexer/demultiplxer chip set for 40-Gbit/s optical communication systems,” Radio Frequency Integrated Circuits Symposium (Philadelphia, PA), 2003 , pp. 63-69.
   
3. M. Akazawa, T. Tanaka, K. Inafune, and E. Sano; "Electromagnetic Field Simulation of 2-Dimensional Polygon-Array Photonic Crystals," 2003 RCIQE International Seminar on "Quantum Nanoelectronics for Meme-Media-Based Information Technologies,"(Sapporo, Japan, February 12-14, 2003).
   
4. M. Akazawa; "Possibility of Adiabatic Switching of Single-Electron-Devices," 2003 RCIQE International Seminar on "Quantum Nanoelectronics for Meme-Media-Based Information Technologies,"(Sapporo, Japan, February 12-14, 2003).
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2002

1. H. Nosaka, E. Sano, K. Ishii, M. Ida, K. Kurishima, T. Enoki, and T. Shibata; "A fully integrated 40-Gbit/s clock and data recovery circuit using InP/InGaAs HBTs," IEEE MTT-S Dig. (Seattle, WA), pp. 83-86 (2002).
   
2. S. Tsunashima, H. Nakajima, E. Sano, M. Ida, K. Kirishima, N. Watanabe, T. Enoki, and H. Sugahara; "90GHz operation of novel dynamic frequency divider using InP/InGaAs HBTs," IPRM'02 (Stockholm, Sweden), pp. 43-46 (2002).
   
3. H. Hasegawa, T. Inagaki, S. Ootomo, M. Akazawa, and T. Hashizume; “Properties of Electronic States at Free Surfaces and Schottky Barrier Interfaces of AlGaN/ GaN Heterostructure,” Abstracts of 29th International Symposium on Compound Semiconductor (Lausanne, Switzerland, October 7-10, 2002), Tu-P-6 (2 pages).
   
4. M. Akazawa and H. Hasegawa; "A UHV Contactless Capacitance-Voltage Characterization Method Applicable to Semiconductor Layers Grown on Insulating Substrates, " Book of Abstracts of 6th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC 2002, Budapest, Hungary, May 26-29, 2002), p.179.
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2001

1. K. Murata, T. Enoki, Y. Yamane, and E. Sano; "High speed optical fiber communication ICs based on InP HEMT (invited)," IPRM'01 (Nara, Japan), pp. 610-613 (2001).
   
2. K. Sano, K. Murata, T. Akeyoshi, H. Kitabayashi, and E. Sano;"Monolithic digital optoelectronic ICs towards 100 Gbit/s (invited)," Topical Meet. Ultrafast Electron. Optoelectron. (Lake Tahoe, NV), pp. 21-24 (2001).
   
3. H. Sugahara, S. Kimura, K. Murata, and E. Sano, "Over 40 Gb/s IC module technology using 8-mm-square leadless chip carrier packages mounted on 4-layer resin printed circuit boards," IEEE GaAs IC Symp. Dig. (Baltimore, MD), pp. 255-258 (2001).
   
4. K. Ishii, H. Nosaka, H. Nakajima, K. Kurishima, M. Ida, N. Watanabe, Y. Yamane, E. Sano, and T. Enoki, "1-W 1:16 DEMUX and o ne-chip CDR with 1:4 DEMUX for 10 Gbit/s optical communication systems," IEEE GaAs IC Symp. Dig. (Baltimore, MD), pp. 101-104 (2001).
   
5. K. Kurishima, M. Ida, N. Watanabe, H. Nakajima, Y. Yamane, and E. Sano,"DC characteristics of InP HBTs under high-temperature and bias stress," SSDM2001 (Tokyo, Japan), pp. 336 -337 (2001).
6. K. Murata, K. Sano, E. Sano, S. Sugitani, and T. Enoki, "A fully monolithic integrated 43-Gbit/s clock and data recovery circuit using InAlAs/In GaAs/InP HEMTs," SSDM2001 (Tokyo, Japan), pp. 370 -371 (2001).
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Textbooks

1. 赤澤正道（分担執筆）；第２版　応用物理ハンドブック　応用物理学会編（丸善、2002.4.25）第9章　半導体デバイス　9.12半導体センサとトランスデューサ　9.12.1　磁電効果デバイス, p.643;　9.12.2　熱電効果デバイス, p.644;　9.12.4　放射線検出デバイス, p.645.　
   
2. 佐野栄一；"時分割多重分離用電子回路の動作原理," 河内正夫監修, "超高速ネットワーク技術," 2000, 電気通信協会, pp. 118-122.
   
3. 佐野栄一；"バイポーラおよび化合物半導体デバイス," 桜井貴康編, "低消費電力、高速LSI技術," 1998, リアライズ社, pp. 485-498.
   
4. 雨宮好仁、宮永喜一、赤澤正道；電子情報通信ハンドブック　6-13編　新概念集積回路　(オーム社, 1998), pp. 808 - 814.
   
5. K. Ogawa, L. D. Tzeng, Y. K. Park, and E. Sano;"Advances in high bit-rate transmission systems," in Optical fiber telecommunications III, 1997, San Diego: Academic Press, pp. 336-372.
   
6. 佐野栄一；"光通信用高速集積回路," 阿部浩之, 三村高志, 茅根直樹編, "光・マイクロ波半導体応用技術," 1996, サイエンスフォーラム, pp.317-326.
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