国際会議における講演：49件

(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1609) K. Wakita, E. Sano, M. Ikebe, S. Arnold, T. Otsuji, Y. Takida, and H. Minamide: " Design and fabrication of a terahertz imaging array in 180-nm CMOS process technology, " 21st Int'l Conf. Microwaves, Radar and Wireless Communications (MIKON 2016), Krakow, Poland, May 9-11, (2016).

2.(1610) S. Hara: " Vertical Free-Standing Ferromagnetic MnAs/Semiconducting InAs Heterojunction Nanowires (invited), " the 9th International Conference on Processing and Manufacturing of Advanced Materials (THERMEC 2016), Graz, Austria, May 29-June 3 (2016).

3.(1611) K. Sasaki, R. Kuroda, X. Yin, M. Sato, T. Ogawa, and S. Kasai: " Fabrication and Characterization of A Multiple Gate Nanowire FET for Detecting Spatially Distributed Molecular Charges,"The 43rd International Symposium on Compound Semiconductor (ISCS2016), Toyama, Japan, June 26-30 (2016).

4.(1612) Kenya Nishiguchi, Joji Ohira, Syota Kaneki, Syota Toiya, and Tamotsu Hashizume: " Controllability improvement of Al2O3-gate structure for GaN transistors, " The 43rd International Symposium on Compound Semiconductor (ISCS2016), Toyama, Japan, June 26-30 (2016).

5.(1613) Naoto Tamaki, Akihito Sonoda, Aya Onodera, and Junichi Motohisa: " Influencs of Mask Materials in Selective-Area RF-MBE Growth for GaN Nanowires, " The 43rd International Symposium on Compound Semiconductor (ISCS2016), Toyama, Japan, June 26-30 (2016).

6.(1614) M. Matys, S. Kaneki, J. Kuzmik, B. Adamowicz, Z. Yatabe, and T. Hashizume: "Frequency Dispersion in Capacitance-Voltage Characteristics of Al2O3/AlGaN/GaN Heterostructures, "2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), Hakodate, Japan, July 3-6 (2016).

7.(1615) S. Yanase, H. Sasakura, S. Hara, and J. Motohisa: " Density Control of InP-based Nanowires and Nanowire Quanutm Dots, "The 35th Electronic Materials Symposium (EMS 35), Moriyama, Japan, July 6-8 (2016).

8.(1616) S. Yanase, H. Sasakura, S. Hara, and J. Motohisa: " Density Control of InP-based Nanowires and Nanowire Quantum Dots, "The 35th Electronic Materials Symposium (EMS 35), Moriyama, Japan, July 6-8 (2016).

9.(1617) Kohei Chiba, Katsuhiro Tomioka, Fumiya Ishizaka, Akinobu Yoshida, Junichi Motohisa, and Takashi Fukui: " Selective-area MOVPE growth of InGaAs nanowires for optical communication band, "The 35th Electronic Materials Symposium (EMS 35), Moriyama, Japan, July 6-8 (2016).

10.(1618) K. Tomioka, F. Ishizaka, J. Motohisa, and T. Fukui: " Heterogeneous Integration of InGaAs-Related Nanowires on Si and Their Device Applications (invited), "The 18th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPEXVIII), San Diego, California, USA, July 10-15 (2016).

11.(1619) R. Kodaira, K. Kabamoto, and S. Hara: " Growth Time Dependence of Ferromagnetic MnAs Nanoclusters Formation in Semiconducting InAs Nanowires, "The 18th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPEXVIII), San Diego, California, USA, July 10-15 (2016).

12.(1620) K. Kabamoto, R. Kodaira, and S. Hara:"Magnetic Domain Structures of MnAs/InAs Heterojunction Nanowires, "The 18th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVIII), San Diego, California, USA, July 10-15 (2016).

13.(1621) F. Ishizaka, Y. Hiraya, K. Tomioka, and T. Fukui: " Growth of Wurtzite AlInP in InP/AlInP Core-Shell Nanowires by Crystal Structure Transfer Method, " The 18th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPEXVIII), San Diego, California, USA, July 10-15 (2016).

14.(1622) A. Yoshida, K. Tomioka, F. Ishizaka, K. Chiba, J. Motohisa, and T. Fukui:"Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy, "The 18th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVIII), San Diego, California, USA, July 10-15 (2016).

15.(1623) T. Fukui and K. Tomioka: " III-V semiconductor nanowire hetero-epitaxy on Si, Ge, poly-Si and graphene (invited) "The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan, August 7 - 12 (2016).

16.(1624) K. Tomioka, F. Ishizaka, J. Motohisa, and T. Fukui: " Selective-area growth of InGaAs-based core-multishell nanowires on Si(111) with modulation-doped layer toward tunnel FETs, "The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan, August 7 - 12 (2016).

17.(1625) K. Chiba, K. Tomioka, J. Motohisa, F. Ishizaka, A. Yoshida, and T. Fukui:" Study on Selective-Area Growth of InGaAs Nanowires for Optical Communication Band," The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan, August 7 - 12 (2016).

18.(1626) K. Tomioka, J. Motohisa, and T. Fukui: " Selective-area growth of III-V nanowires on Si and transistor applications (invited), "The Eighth International Conference on Low Dimensional Structures and Devices (LDSD 2016), Mayan Riviera, Mexico, August 28 - September 2 (2016).

19.(1627) K. Tomioka, J. Motohisa, and T. Fukui: " Advances in Steep-Slope Tunnel FETs (invited), "42nd European Solid-State Circuits Conference - 46th European Solid- State Device Research Conference (ESSCIRC-ESSDERC 2016), Lausanne, Switzerland, September 12 - 15 (2016).

20.(1628) S. Yanase, H. Sasakura, S. Hara, and J. Motohisa: " Single Photon Emission from InAsP Quantum Dots Embedded in Density-Controlled InP Nanowires, "2016 International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, September 26-29 (2016).

21.(1629) Z. Yatabe, J.T. Asubar, Y. Nakamura, T. Hashizume:" Effects of Electronic States at Insulator/AlGaN Interfaces on Threshold Voltage Instability of Al2O3/AlGaN/GaN Structures, "2016 International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, September 26-29 (2016).

22.(1630) Shougo Yanase, Hirotaka Sasakura, Shinjiro Hara, and Junichi Motohisa: " Singlephoton emission from InAsP quantum dots embedded in density-controlled InP nanowires, " 2016 International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, September 26-29 (2016).

23.(1631) F. Ishizaka, Y. Hiraya, K. Tomioka, J. Motohisa, and T. Fukui: " Structural and Optical Properties of Wurtzite InP/AlInP Core-Multishell Nanowires, "2016 International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, September 26-29 (2016).

24.(1632) K. Tomioka, F. Ishizaka, J. Motohisa, and T. Fukui: " InGaAs/Si heterojunction tunnel FET with modulation-doped channel, " 2016 International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, September 26-29 (2016).

25.(1633) M. ˇTapajna, R. Stoklas, D. Greguˇsov´a, L. V´alik, F. Gucmann, K. Huˇsekov´a , ˇS.Haˇsˇc´ık, K. Fr¨ohlich, L. T´oth, B. P´ecz, M. Miˇcuˇs´ık, F. Brunner, T. Hashizume, and J. Kuzm´ık: " On the origin of surface donors in AlGaN/GaN metal-oxidesemiconductor heterostructures with Al2O3 gate dielectric: Correlation of electrical, structural, and chemical properties,"2016 International Workshop on Nitride Semiconductors (IWN2016), Orlando, Florida, USA, October 2-7 (2016).

26.(1634) M. Matys, S. Kaneki, B. Adamowicz, J. Kuzmik, and T. Hashizume: " Characterization of Interface States from Frequency Dispersion in Capacitance-Voltage Curves of Al2O3/AlGaN/GaN Heterostructures, "2016 International Workshop on Nitride Semiconductors (IWN2016), Orlando, Florida, USA, October 2-7 (2016).

27.(1635) M. Akazawa, A. Seino, N. Yokota and T. Hasezaki: " Reduction of Interface State Density at SiO2/InAlN Interface by Inserting Ultrathin Interlayers, " 2016 International Workshop on Nitride Semiconductors (IWN2016), Orlando, Florida, USA, October 2-7 (2016).

28.(1636) Y. Kumazaki, S. Matsumoto, and T. Sato: " Precise Structural Tuning of Porous GaN Using Two-Step Anisotropic Etching for Optical and Photo-Electric Applications, " 2016 Pacific Rim Meeting on Electrochemistry and Solid State Science (PRiME 2016), Honolulu, Hawaii, USA, October 2-7 (2016).

29.(1637) S. Omi, Y. Kumazaki, and T. Sato:" Electrochemical Formation and Characterization of Cu2O Films on n-type InP Porous Structures,"2016 Pacific Rim Meeting on Electrochemistry and Solid State Science (PRiME 2016), Honolulu, Hawaii, USA, October 2-7 (2016).

30.(1638) K. Tomioka, J. Motohisa, and T. Fukui:"Recent progress in vertical Si/III-V tunnel FETs: from fundamentals to current boosting technology (invited), " 2016 Pacific Rim Meeting on Electrochemistry and Solid State Science (PRiME 2016), Honolulu, Hawaii, USA, October 2-7 (2016).

31.(1639) A.Yoshida, K. Tomioka, F. Ishizaka, K. Chiba, and J. Motohisa: " Selective-area growth of vertical InGaAs nanowires on Ge(111) for transistor applications, "2016 Pacific Rim Meeting on Electrochemistry and Solid State Science (PRiME 2016), Honolulu, Hawaii, USA, October 2-7 (2016).

32.(1640) K. Chiba, K. Tomioka, F. Ishizaka, A. Yoshida, and J. Motohisa:"Heterogeneous Integration of InGaAs Nanowires on Si(111) for Si Photonics,"2016 Pacific Rim Meeting on Electrochemistry and Solid State Science (PRiME 2016), Honolulu, Hawaii, USA, October 2-7 (2016).

33.(1641) T. Hashizume:"Surface passivation structures for GaN power transistors (invited)," Advanced Metallization Conference 2016 (ADMETA-2016), Tokyo, Japan, October 20 (2016).

34.(1642) T. Sato, X. Zhang, K. Ito, S. Matsumoto, and Y. Kumazaki: " Electrochemical formation of N-type GaN and N-type InP porous structures for chemical sensor applications,"IEEE SENSORS 2016, Orlando, Florida, USA, October 30-November 2 (2016).

35.(1643) K. Wakita, M. Ikebe, S. Arnold, T. Otsuji, Y. Takida, H. Minamide, and E. Sano: " Design and fabrication of a terahertz detector in 180-nm CMOS process technology, " 5th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies (RJUSE TeraTech-2016), Sendai, Japan, October 31-November 4, (2016).

36.(1644) S. Okamoto, M. Sato, K. Sasaki, and S. Kasai:"Detection of Charge State of Single Molecules Using A GaAs- Based Nanowire Enhanced by Metal-Molecule Capacitive Coupling, "29th International Microporcesses and Nanotechnology Conference (MNC2016), Kyoto, Japan, November 8-11 (2016).

37.(1645) R. Kuroda, X. Yin, and S. Kasai:"Nanoscale Surface Structural Evolution in GaAs Digital Wet Etching with Sub-second Oxidation and Dissolution Process, " 29^th International Microporcesses and Nanotechnology Conference (MNC2016), Kyoto, Japan, November 8-11 (2016).

38.(1646) R. Horiguchi, H. Kato, K. Kabamoto, R. Kodaira, and S. Hara: " Structural and Magnetic Domain Characterization of Lateral MnAs Nanowires, " 29th International Microporcesses and Nanotechnology Conference (MNC2016), Kyoto, Japan, November 8-11 (2016).

39.(1647) R. Kodaira, K. Kabamoto, and S. Hara: " Shape Control of Ferromagnetic MnAs Nanoclusters and Their Magnetization in Semiconducting InAs Nanowires, " 29^th International Microporcesses and Nanotechnology Conference (MNC2016), Kyoto, Japan, November 8-11 (2016).

40.(1648) A.Yoshida, F. Ishizaka, K. Tomioka, and J. Motohisa:" Heterogeneous integration of vertical InxGa1¡xAs nanowires on Ge(111) substrates by selective-area MOVPE, " 29th International Microporcesses and Nanotechnology Conference (MNC2016), Kyoto, Japan, November 8-11 (2016).

41.(1649) M. ˇTapajna, L. V´alik, D. Greguˇsov´a, K. Fr¨ohlich, F. Gucmann, T. Hashizume, and J. Kuzm´ık: " Threshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: Relation to distribution of oxide/semiconductor interface state density, "International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM '16), Smolenice, Slovakia, November 13-16 (2016).

42.(1650) M. Yoshioka, T. Zhu, and S. Hara:"A Multi-Faceted Figure Retrieval System from Research Papers for Supporting Nano-Crystal Device Development Researchers, " The 1st International Workshop on Scientific Document Analysis (SCIDOCA 2016), Yokohama, Japan, November 15-16 (2016).

43.(1651) K. Wakita, M. Ikebe, Y. Takida, H. Minamide, and E. Sano: " Design and fabrication of low power terahertz imager based on 180 nm CMOS process technology, "3rd International Workshop on Image Sensors and Imaging Systems (IWISS2016), Tokyo, Japan, November 17-18, (2016).

44.(1652) Y. Inden, K. Shirata, and S. Kasai: " Robust Detection of Surface Myoelectric Signal Using a Nonlinear Device Network for Intuitive Man-Machine Interface,"2016 International Symposium on Nonlinear Theory and Its Applications (NOLTA2016), Yugawara, Japan, November 27-30 (2016).

45.(1653) K. Tomioka: " Selective area growth of III-V nanowires on Si and their transistor applications (invited), "2016 Hokkaido University-Seoul National University Joint Workshop, Sapporo, Japan, November 25 (2016).

46.(1654) K. Tomioka, F. Ishizaka, J. Motohisa, and T. Fukui:"High-performance InGaAs/Si tunnel FETs using core-multishell nanowire-channel, "The 2016 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 27-December2 (2016).

47.(1655) M. T. Elm, R. Kodaira, R. Horiguchi, K. Kabamoto, P. J. Klar, and S. Hara: " Structural Characterization and Magnetotransport Properties of MnAs/InAs Hybrid Nanowires Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy,"The2016 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 27-December 2 (2016).

48.(1656) T. Hashizume: " Improved MOS gate control for GaN power transistors (invited), " 3rd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-3), Sendai, Japan, January 16-18 (2017).

49.(1657) Takashi Fukui, Yoshihiro Hiraya, Fumiya Ishizaka, and Katsuhiro Tomioka:"Phase transition from Zinc Blende to Wurtzite and green-yellow emission of AlInP grown by crystal structure transfer method (invited), "13th Sweden - Japan Workshop on Quantum Nanophysics and Nanoelectronics (QNANO Workshop), Tokyo, Japan, March 23-24 (2017).