announcement: 2009 RCIQE International Seminar
2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices"
March 2-3, 2009
Conference Hall, Hokkaido University
→ Map of Hokkaido University and RCIQE
→ Program (download PDF version)
Monday, March 2
| 10:00 - 10:10 | "Opening Address" |
| - Semiconductor Nanowires - | |
| 10:10 - 10:50 | "Vapor-liquid-solid growth of III-V nanowires: Mechanisms, difficulties, challenges" J.-C. Harmand, F. Glas, G. Patriarche, L. Largeau, M. Tchernycheva, C. Sartel and L. Liu, CNRS-LPN, France |
| 10:50 - 11:30 | "Heterostructured wurtzite/zinc-blende GaAs/GaAsSb nanowires: New possibilities for band-structure engineering in nanowire based photonic devices" H. Weman, Norwegian University of Science and Technology, Norway |
| 11:30 - 11:50 | "III-V semiconductor nanowires and their device application" T. Fukui, Hokkaido University |
| 11:50 - 13:20 | Lunch Break |
| - Spintronics - | |
| 13:20 - 14:00 | "Characterization of spintronic materials - Are ferromagnetic clusters in semiconductors useful for spintronics?" P. J. Klar, Justus-Liebig-University of Giessen, Germany |
| 14:00 - 14:20 | "Ferromagnetic MnAs nanoclusters position- controlled by selective-area MOVPE toward magneto-resistive device applications" S. Hara, Hokkaido University and JST-PRESTO |
| 14:20 - 14:40 | Coffee Break |
| - Graphen - | |
| 14:40 - 15:20 | "Novel microscopies for graphene on SiC" M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi, NTT Basic Research Labs. |
| 15:20 - 15:40 | "Theoretical investigation of graphene-channel field-effect transistors" E. Sano, Hokkaido University |
| 15:40 - 16:00 | "Fabrication and characterization of graphene transistor on SiC" K. Yoh and K. Konishi, Hokkaido University |
| 16:00 - 17:30 | Poster Viewing Session Lab Tour to RCIQE (17:00 - 18:00) |
| 18:00 - 19:30 | Reception (Centennial Hall, Hokkaido Univ.) |
Tuesday, March 3
| - Advanced Device Technology - | |
| 10:00 - 10:40 | "InGaAs MISFET with hetero-laucher" Y. Miyamoto, Tokyo Institute of Technology |
| 10:40 - 11:20 | "Cooperation of R&D's on compound semiconductor materials with advanced electron devices in NTT laboratories" N. Shigekawa, M. Hiroki and H. Sugiyama, NTT Photonics Labs. |
| 11:20 - 11:40 | "Electrochemical formation and sensor application of InP porous nanostructures" T. Sato, Hokkaido University |
| 11:40 - 13:10 | Lunch Break |
| - Nanoelectronic Materials and Devices - | |
| 13:10 - 13:50 | "Novel-functional single-electron device using nanodot array with multiple outputs" Y. Takahashi1, T. Kaizawa1, M. Arita1, A. Fujiwara2, Y. Ono2 and H. Inokawa3, 1Hokkaido University, 2NTT Basic Research Labs., 3Shizuoka University |
| 13:50 - 14:30 | "Siliconphotonics and plasmonics for on-chip interconnection" K. Ohashi, NEC and MIRAI-Selete |
| 14:30 - 14:50 | "Semiconductor surfaces and growth of nanowires: A first-principles study" H. Koga, Hokkaido University |
| 14:50 - 15:00 | "Closing Remarks" |
correspondence:
Taketomo Sato, RCIQE, Hokkaido University
TEL: 011-706-7175, FAX: 011-716-6004
e-mail: taketomo@rciqe.REMOVEME.hokudai.ac.jp
(remove REMOVEME from the address)
http://www.rciqe.hokudai.ac.jp/conferences/seminar2009.html
