announcement: 2008 RCIQE International Seminar
2008 RCIQE International Seminar on"Advanced Semiconductor Materials and Devices"
March 3-4, 2008
Conference Hall, Hokkaido University
→ Map of Hokkaido University and RCIQE
→ Program (download PDF version)
Monday, March 3
| 10:00 - 10:10 | "Opening Address" T. Fukui, Hokkaido University |
| - Formation of Nanostructures I - | |
| 10:10 - 10:50 | "Ultraviolet to red emission of InGaN/AlGaN nanocolumn LEDs and related nanocolumn growth technology" K. Kishino, Sophia University |
| 10:50 - 11:20 | "InP/InAs core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy" T. Fukui, Hokkaido University |
| 11:20 - 11:50 | "Datta-Das-type spin field-effect transistor operation in the non-ballistic regime" K. Yoh, Hokkaido University |
| 11:50 - 13:20 | Lunch Break |
| - Formation of Nanostructures II - | |
| 13:20 - 14:00 | "Metal-induced crystallization of Si for nano- structure formation" T. Asano, Kyushu University |
| 14:00 - 14:40 | "Growth, optical and electrical properties of III-V semiconductor nanowires " G. Zhang, NTT Basic Research Laboratories |
| 14:40 - 15:00 | Coffee Break |
| - Physics and Device Application of Nanostructures - | |
| 15:00 - 15:40 | "THz photon assisted tunneling in carbon nanotube quantum dots" K. Ishibashi, T. Fuse, Y. Kawano, S. Toyokawa and T. Yamaguchi, RIKEN. |
| 15:40 - 16:00 | "GaAs-nanowire-network-based functional devices for information processing" S. Kasai, Hokkaido University and JST-PRESTO |
| 16:00 - 17:30 | Poster Viewing Session |
| 17:30 - 18:00 | Lab Tour to RCIQ |
| 18:00 - 19:30 | Reception (Centennial Hall, Hokkaido Univ.) |
Tuesday, March 4
| - Advanced Optoelectronic and Electronic Devices - | |
| 09:20 - 10:00 | "Development of high-performance ZnO heterostructure FETs and their applications" S. Sasa, K. Koike, M. Yano, T. Maemoto, and M. Inoue, Osaka Institute of Technology |
| 10:00 - 10:40 | "Terahertz detectors and emitters based on plasma wave oscillations in nanometer size structures" W. Knap, CNRS, France |
| 10:40 - 11:00 | Coffee Break |
| 11:00 - 11:40 | "Novel phase-change memory devices and their integration technology" B.-G. Yu and S.-M. Yoon, Electronics and Telecommunications Research Institute, Korea |
| 11:40 - 12:00 | "Mesa-gate AlGaN/GaN HEMTs with nano-size channels" T. Hashizume and T. Tamura, Hokkaido University |
| 12:10 - 13:30 | Lunch Break |
| - Spintoronic Materials and Devices - | |
| 13:30 - 14:10 | "Spintronics materials and devices for advanced electronics" M. Tanaka, The University of Tokyo |
| 14:10 - 14:50 | "Heusler alloy-based fully epitaxial magnetic tunnel junctions with a MgO tunnel barrier" M. Yamamoto, T. Uemura and K. Matsuda, Hokkaido University |
| 14:50 - 15:10 | "Selective-area formation of ferromagnetic MnAs/GaAs nanoclusters by MOVPE" S. Hara, Hokkaido University and JST-PRESTO |
| 15:10 - 15:20 | "Closing Remarks" E. Sano, Hokkaido University |
correspondence:
Taketomo Sato, RCIQE, Hokkaido University
TEL: 011-706-7175, FAX: 011-716-6004
e-mail: taketomo@rciqe.REMOVEME.hokudai.ac.jp
(remove REMOVEME from the address)
http://www.rciqe.hokudai.ac.jp/conferences/seminar2008.html
