Research

announcement: 2007 RCIQE International Seminar

2007 RCIQE International Seminar on"Advanced Semiconductor Materials and Devices"

February 8th-9th, 2007
Conference Hall, Hokkaido University

Map of Hokkaido University and RCIQE
Program (download PDF version of Program (with Japanese))

Thursday, February 8th
10:00 - 10:10 "Opening Address"
Takashi Fukui, Hokkaido University
  - Formation of Nanostructures -
10:10 - 10:50 "Growth fundamentals of GaAs and InAs nanowires by using vapor-liquid-solid mechanism"
Kenji Hiruma, Keiichi Haraguchi, Masamitsu Yazawa and Toshio Katsuyama, Central Research Laboratory, Hitachi Ltd.
10:50 - 11:30 "Evolution mechanism of InAs quantum dot on GaAs(001) investigated by STMBE: in-situ STM observation during MBE growth"
Shiro Tsukamoto, University of Tokyo
11:30 - 11:50 "MOVPE growth and structural characterization of ferromagnetic MnAs nanoclusters"
Shinjiro Hara, Hokkaido University
11:50 - 12:10 Electrochemical formation of uniform arrays of InP nanostructures
Taketomo Sato, Hokkaido University
12:10 - 13:30 Lunch Break
  - Advanced Optoelectronic and Electronic Devices -
13:30 - 14:10 "Optical properties of GaN films for different nonpolar orientations"
Holger Grahn, Paul Drude Institute, Germany
14:10 - 14:50 "High-efficiency InAlGaN-based UV LEDs"
Hideki Hirayama, RIKEN
14:50 - 15:10 Break
15:10 - 15:50 "AlGaN/GaN HFETs for power switching applications"
Tsuyoshi Tanaka, Matsushita Electric Industrial Co., Ltd.
15:50 - 16:10 "MBE growth and in-situ XPS characterization of silicon interlayers for surfaces passivation of GaAs quantum devices"
Masamichi Akazawa and Hideki Hasegawa, Hokkaido University
16:10 - 17:40 Poster Viewing Session
17:40 - 18:20 Lab Tour to RCIQ
18:30 - 20:00 Reception (Clark Memorial Student Center 2F)

 

Tuesday, February 9th
  - Physics and Device Application of Nanostructuers -
09:15 - 09:55 "Single-electron control of supercurrent transport in semiconductor quantum dots"
Silvano De Franceschi, Jorden van Dam, Yong-Joo Doh, Leo Kouwenhoven, Aarnoud Roest and Erik Bakkers, CEA-DRFMC, Grenoble, France, Kavli Institute of Nanoscience, Delft, The Netherlands
09:55 - 10:30 "Growth and photoluminescence study of semiconductor nanowires"
Junichi Motohisa, Hokkaido University
10:30 - 10:50 Break
10:50 - 11:30 "Nanoscale metal switches and their application to reconfigurable circuits"
Hisao Kawaura, NEC Corporation
11:30 - 12:10 "Photon-spin qubit-conversion based on dynamic nuclear polarization of a single quantum dot"
Shunichi Muto, Satoru Adachi and Hirotaka Sasakura, Hokkaido University
12:10 - 13:30 Lunch Break
  - Carbon Nanoelectronics -
13:30 - 14:10 "Controlling the electronic structure of bilayer graphene"
Taisuke Ohta, Fritz Haber Institute, Germany, Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, USA
14:10 - 14:50 "Electrical and optical characterization of carbon nanotube FETs"
Takashi Mizutani, Nagoya University
14:50 - 15:25 "Electrical properties of nano-graphite grown on silicon carbide"
Kanji Yoh, Hokkaido University
15:25 - 15:30 "Closing Remarks"
Kanji Yoh, Hokkaido University

 

correspondence:

Taketomo Sato, RCIQE, Hokkaido University
TEL: 011-706-7175, FAX: 011-716-6004
e-mail: taketomo@rciqe.REMOVEME.hokudai.ac.jp
(remove REMOVEME from the address)
http://www.rciqe.hokudai.ac.jp/conferences/seminar2007.html

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