announcement: 2006 RCIQE International Seminar
2006 RCIQE International Seminar for 21st Century COE Program:
"Quantum Nanoelectronics for Meme-Media-Based Information Technologies (IV)"
February 9th-10th, 2006
Conference Hall, Hokkaido University
→ Map of Hokkaido University and RCIQE
→ Program (download PDF version of Program (with Japanese))
Thursday, February 9th
| 10:00 - 10:10 | "Introductory talk" Takashi Fukui, Hokkaido University |
| - Spintronics - | |
| 10:10 - 10:50 | "Manipulation and control of spins in III-V semiconductors by gated structures" Hideaki Takayanagi, NTT Basic Research Laboratories |
| 10:50 - 11:30 | "Spin injection into InGaAs quantum wells from Fe and Co2MnGa thin films" Mark Hickey, University of Cambridge |
| 11:30 - 12:10 | "Electrical and magnetic characterization of Fe/Tb magnetic superlattice grown on InAs" Kanji Yoh, Robert Peters, Saori Kashiwada, Marhoun Ferhat, Werner Keune, Hokkaido University |
| 12:10 - 13:10 | Lunch Break |
| - Nanomaterials - | |
| 13:10 - 13:50 | "ZnO nanorods, heterostructures, and devices" Gyu-Chul Yi, Pohang University of Science and Technology |
| 13:50 - 14:30 | "Fabrication, characterization and application of semiconductor nanoparticles of jingle-bell structure" Bunsho Ohtani and Tsukasa Torimoto, Hokkaido University |
| 14:30 - 14:50 | Break |
| 14:50 - 15:30 | "Growth and properties of semiconductor nanowires by SA-MOVPE" Junichi Motohisa and Takashi Fukui, Hokkaido University |
| 15:30 - 16:10 | "Signatures of magnetism in an individual Mn12O12 molecule probed by single-electron tunneling" Moon-Ho Jo, Pohang University of Science and Technology |
| 16:10 - 17:40 | Poster Viewing Session |
| 17:40 - 18:20 | Lab Tour to RCIQ |
| 18:30 - 20:30 | Reception |
Tuesday, February 10th
| - Quantum Devices - | |
| 09:00 - 09:40 | "Self-assembling formation of Si-based quantum dots and control of their electric charged states for multi-valued memories" Seiichi Miyazaki, Hiroshima University |
| 09:40 - 10:20 | "Quantum cascade lasers:present status and perspective" Masamichi Yamanishi, Hamamatsu Photonics KK |
| 10:20 - 10:40 | Break |
| - Nitride Semiconductor Technology - | |
| 10:40 - 11:20 | "Preparation and properties of InN and InGaN and those hetero-structures" Yasushi Nanishi, Ritsumeikan University |
| 11:20 - 12:00 | "Control of defects and impurities at GaN and AlGaN surfaces for FET and sensor applications" Tamotsu Hashizume, Hokkaido University |
| 12:00 - 13:30 | Lunch Break |
| - High-Speed Devices and Systems - | |
| 13:30 - 14:10 | "InP-based IC technologies for exploring over-100-GHz applications" Takatomo Enoki, NTT Photonics Laboratories |
| 14:10 - 14:50 | "High performance full-band wavelength tunable laser for next generation photonic network systems" Koji Kudo, NEC Corporation |
| 14:50 - 15:35 | "Innovative circuit technologies for millimeter-wave applications" Eiichi Sano, Hokkaido University |
Poster Viewing Session
| P-1 | "Epitaxially grown Co2MnGe thin films and application to fully epitaxial magnetic tunnel junctions" T. Marukame, T. Ishikawa, K. -i. Matsuda, T. Uemura and M. Yamamoto Graduate School of Information Science and Technology, Hokkaido University |
| P-2 | "Growth and magnetic characterizations of MnAs nanoclusters on GaInAs/InP (111) layers by MOVPE" Shinjiroh Hara and Takashi Fukui Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| P-3 | "Single domain wall in ferromagnetic micro-contacts for hybride spintronic devices" Marhoun Ferhat1,2, Agus Subagyo3 and Kanji Yoh1,2 Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, 2CREST-JST, 3Graduate School of Information Science and Technology, Hokkaido University |
| P-4 | "Characterization of anisotropic tunnel magneto-resistance in (Ga,Mn)As/AlAs/(Ga,Mn)As magnetic tunnel junctions" T. Uemura, T. Sone, K. -i. Matsuda, and M. Yamamoto Graduate School of Information Science and Technology, Hokkaido University |
| P-5 | Material design considerations of spin blockade measurements in a spin transistor structure embedded with quantum dots" Saori Kashiwada and Kanji Yoh Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
| P-6 | "Electroluminescence measurement of spin injection for Fe/Tb multilayers on InAs" 1Saori Kashiwada, 2Robert Peters, 1Marhoun Ferhat, 2Welner Keune and 1Kanji Yoh 1Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, 2Applied Physics, University of Duisburg-Essen |
| P-7 | "Effect of ferromagnetic-layer thickness on the critical current in Nb/Pd1-xNix/Nb Josehpson p-junctions K. -i. Matsuda, H. Niwa, Y. Akimoto, T. Uemura, and M. Yamamoto Graduate School of Information Science and Technology, Hokkaido University |
| P-8 | "Synthesis of high quality single wall carbon nanotubes by low temperature catalytic chemical vapor deposition of alcohol using zeolite support" Krishnendu Bhattacharyya, Takeshi Saito, Yuki Hayakawa, Akihide Tanaka, Atsushi Okita, Yoshiyuki Suda, amd Yosuke Sakai Graduate School of Information Science and Technology, Hokkaido University |
| P-9 | "Fabrication of triangular GaAs nanowires using selective MBE on (111)B patterned substrates" Isao Tamai, Taketomo Sato, and Hideki Hasegawa Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| P-10 | "Growth and characterization of GaAs/AlGaAs core-shell nanowires" Jinichiro Noborisaka, Junichi Motohisa, Shinjiroh Hara and Takashi Fukui Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
| P-11 | "Selective-area MOVPE fabrication of InP-based heterostructure manowire arrays" Premila Mohan, Katsuhiro Tomioka, Junichi Motohisa and Takashi Fukui Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| P-12 | "Growth of vertically aligned InAs nanowires by selective-area MOVPE" Katsuhiro Tomioka, Premila Mohan, Jinichiro Noborisaka, Shinjiroh Hara, Junichi Motohisa and Takashi Fukui Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| P-13 | "Growth mechanism of GaN/AlGaN nanowires on non-planar substrates" Taketomo Sato, Takeshi Oikawa, Hideki Hasegawa and Tamotsu Hashizume Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| P-14 | "X-ray photoelectron spectroscopy study of silicon interlayer based passivation for GaAs and AlGaAs (111)B surfaces" Masamichi Akazawa, Nanako Shiozaki, and Hideki Hasegawa Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| P-15 | "Side-gating effects in GaAs-based quantum wire transistors and its suppression by surface passivation using Si interface control layer" Rui Jia, Seiya Kasai and Hideki Hasegawa Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| P-16 | "Isothermal current transient spectroscopy and light sensitivity of gate lag as a tool to investigate the origin of RF current collapse in AlGaN/GaN HEMT" Alberto Basile, Junji Kotani, and Tamotsu Hashizume Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| P-17 | "Theoretical and experimental study on C(V) behavior of metal-insulator-semiconductor and Schottky AlGaN/GaN diodes at room and higher temperatures" Marcin Miczek, Hiroki Kato, Masamitsu Kaneko, and Tamotsu Hashizume Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
| P-18 | "Mechanism of large reduction of leakage currents in AlGaN Schottky interfaces by a novel surface control process" Junji Kotani, Masamitsu Kaneko, Hideki Hasegawa, and Tamotsu Hashizume Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| P-19 | "Chemical and electrical properties of GaP1-xNx surfaces grown by molecular beam epitaxy" Masamitsu Kaneko1, Tamotsu Hashizume1, and Charles W. Tu2 1Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, 2Department of Electrical and Computer Engineering, University of California, San Diego |
| P-20 | "Plasma wave interactions in GaAs interdigital-gated HEMT devices from microwave up to THz frequencies" Abdul Manaf Hashim, Seiya Kasai, Hideki Hasegawa, and Tamotsu Hashizume Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| P-21 | "110 GHz active integrated antenna oscillator based on full-wave design methodology and 0.1-mm gate InP-based HEMTs" Koji Inafune and Eiichi Sano Research Center for Integrated Quantum Electronics, Hokkaido University |
| P-22 | "Hexagonal pillars with single InGaAs/GaAs quantum well on fabricated by selective area metal organic vapor phase epitaxy" Lin Yang, Junichi Motohisa, Junichiro Takeda, and Takashi Fukui Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University |
| P-23 | "Selective-area MOVPE growth of GaAs-based two-dimensional air-hole type photonic crystal slabs and control of air-hole shapes" Junichiro Takeda, Lin Yang, Shinji Hashimoto, Junichi Motohisa and Takashi Fukui Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| P-24 | "THz transmission properties of metal hole-array filters" Yusuke Yamazaki, Masamichi Akazawa and Eiichi Sano Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| P-25 | "Single-electron devices for reaction-diffusion computing" Takahide Oya, Tetsuya Asai and Yoshihito Amemiya Graduate School of Information Science and Technology, Hokkaido University |
| P-26 | "Investigation of selectively MBE grown GaAs hexagonal nanowire networks for high-density integration of hexagonal BDD quantum devices" Takahiro Tamura, Isao Tamai, Seiya Kasai, Taketomo Sato, Hideki Hasegawa, and Tamotsu Hashizume Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| P-27 | "Characterization of switching power dissipation in Schottky wrap gate-based quantum nanodevices for their digital system application" Seiya Kasai, M. Yumoto, and Hideki Hasegawa Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| P-28 | "Memory operation of GaAs narrow wire FETs with InAs quantum dots fabricated by selective-area MOVPE" Noboru Ooike, Devaraj Nataraj, Junichi Motohisa, and Takashi Fukui Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
correspondence:
Junichi Motohisa, RCIQE, Hokkaido University
TEL: 011-706-6870, FAX: 011-716-6004
e-mail: motohisa@rciqe.REMOVEME.hokudai.ac.jp
(remove REMOVEME from the address)
http://www.rciqe.hokudai.ac.jp/conferences/seminar2006.html
