国際会議における講演：21件

(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1814) M. Akazawa, S. Murai, R. Kamoshida, E. Wu, and T. Kachi:"Impact of Cap-Layer Materials Used in Long-Term Low-Temperature Annealing on Electrical Properties of Mg-Ion Implanted GaN, " 62nd Electronic Materials Conference (EMC2020), Online Meeting, June 24-26 (2020).

2.(1815) Katsuhiro Tomioka and Junichi Motohisa:" Integration of III-V nanowire LEDs on Si (Invited),"The 20th International Meeting on Information Display (IMID 2020), Virtual Conference, Korea, August 25-28 (2020).

3.(1816) Masayuki Ikebe: " A CMOS THz Image Sensor with Process Variation Tolerance Technique (Invited), " 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), Hiroshima, Japan, Sep. 2-4 (2020).

4.(1817) W. Dai, K. Teramoto, R. Horiguchi, W. Kanetsuka, M. Akabori, and S. Hara: " Magnetic Domain Structures Controlled by Patterned CoFe Nanolayer Thickness on GaAs (001) Substrates, " 2020 International Conference on Solid State Device and Materials (SSDM2020), Virtual Conference, September 27-30 (2020).

5.(1818) Hironori Gamo, Lian Chen, Yu Katsumi, Junichi Motohisa and Katsuhiro Tomioka: " Selective-area growth of InGaAs/GaSb core-shell nanowires on Si, "2020 International Conference on Solid State Device and Materials (SSDM2020), Virtual Conference, September 27-30 (2020).

6.(1819) Tomoya Akamatsu, Masahiro Sasaki, Katsuhiro Tomioka, and Junichi Motohisa: " Control of the size and the emission wavelength in InP-based nanowire quantum dots, " 2020 International Conference on Solid State Device and Materials (SSDM2020), Virtual Conference, September 27-30 (2020).

7.(1820) T. Sato, and M. Toguchi:"Photo-Electrochemical Etching and Porosification of IIINitride Semiconductors (Invited), " 2020 Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME 2020), Virtual Conference, October 4-9 (2020).

8.(1821) M. Toguchi, K. Miwa, F. Horikiri, N. Fukuhara, Y. Narita, O. Ichikawa, R. Isono, T. Tanaka, and T. Sato:"Fabrication of Recessed-Gate AlGaN/GaN HEMTs Utilizing Contactless Photo-Electrochemical (CLPEC) Etching, "2020 Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME 2020), Virtual Conference, October 4-9 (2020).

9.(1822) Y. Tai, J. Motohisa, K. Tomioka: " Selective-Area Growth of AlInAs Nanowires, "2020 Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME 2020), Virtual Conference, October 4-9 (2020).

10.(1823) S. Mizuno, R. Lu, Y. Ueba, M. Ishikawa, M. Kitamura, M. Hoga, and S. Kasai: "Fabrication and Characterization of Nano-Convex-Embedded Si MOSFET toward Electrical Nanostructure Discrimination, " 33rd International Microprocesses and Nanotechnology Conference (MNC 2020), Virtual Conference, Nov. 9-12 (2020).

11.(1824) W. Dai, K. Teramoto, R. Horiguchi, W. Kanetsuka, M. Akabori, and S. Hara: "Thickness-Dependent Magnetization Switching in Patterned CoFe Nanolayers on GaAs (001) Substrates, " 33rd International Microprocesses and Nanotechnology Conference (MNC 2020), Virtual Conference, Nov. 9-12 (2020).

12.(1825) K. Saito, S. Kasai, and M. Aono: " Evaluation of Solution Search Performance of Amoeba-Inspired Electronic Computing System for Solving Maximum Cut Problem, "2020 International Symposium on Nonlinear Theory and Its Applications (NOLTA2020), Virtual Conference, Nov. 16-19 (2020).

13.(1826) Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa and Takashi Fukui:"Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure, " 66th International Electron Devices Meeting (IEDM 2020), Virtual Conference, USA, December 14-18 (2020).

14.(1827) Yuri Kanazawa: " A 32 × 32-Pixel Global Shutter CMOS THz Imager with VCOBased ADC (Invited),"26th Asia and South Pacific Design Automation Conference ASP-DAC, Virtual Conference, January 18-21 (2021).

15.(1828) S. Kasai:"Electronic implementation of nature-inspired functionalities dealing with fluctuations (invited), "MJIIT-UTM Nanotech: Materials and Devices 2021 Prominent Lecture Series, Virtual Conference, Feb. 16, 2021.

16.(1829) T. Hashizume and S. Kaneki: " Interface properties of Al2O3-based MOS structures on m-plane GaN, "The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), Virtual Conference, March 1-3 (2021).

17.(1830) T. Sato, M. Toguchi, K. Itoh, T. Hashizume: " Precise control in threshold voltage of AlGaN/GaN HEMTs utilizing a photoelectrochemical (PEC) etching, "The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), Virtual Conference, March 1-3 (2021).

18.(1831) Michihito Shimauchi, Kazuki Miwa, Masachika Toguchi, Taketomo Sato, and Junichi Motohisa: " Photo-assisted electrochemical etching of GaN for nanostructure fabrication, "The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), Virtual Conference, March 1-3 (2021).

19.(1832) M. Akazawa, Yuya Tamamura and S. Murai:"A Defect Level Generated in GaN by High-Temperature Annealing with AlN Encapsulation, "13th International Symposium on Advanced Science and its Appliaction for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology & Science (ISPlasam2021/ICPLANTS2021), Virtual Conference, March 7-11 (2021).

20.(1833) S. Kasai:"Stochastic resonance in electronics (invited),"Krakow Condensed Matter (UPeL) Seminar, Virtual Conference, March 10 (2021).

21.(1834) T. Hashizume, R. Ochi, E. Maeda, T. Nabatame, K. Shiozaki, and T. Sato:"HfSiOx-gate GaN MOS-HEMTs for RF power transistor (invited),"Society of Photographic Instrumentation Engineers (SPIE), Photonics West 2021, Gallium Nitride Materials and Devices XVI, Virtual Conference, Mar. 6-11 (2021).