研究内容・成果 - 研究業績

国際会議

国際会議における講演:67件(うち招待講演18件)

(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1429) Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui:" Highly Conductive InAs Nanowire Vertical Transistors on Si,"MRS spring meeting 2013, San Francisco, USA, April 1-5 (2013).

2.(1430) Y. Hori, T. Hashizume and M. Akazawa:"Characterization and Control of Insulated Gate Interfaces on GaN-Based Heterostructures (invited), "2013 International Conference on Compound Semiconductor Manufacturing Technology (CS-MANTECH), Hilton New Orleans Riverside, New Orleans, USA, May 13-16 (2013).

3.(1431) X. Yin and S. Kasai:" Graphene-based Three-branch Nano-junction (TBJ) Logic Inverter, "The 40th International Symposium on Compound Semiconductors (ISCS 2013), Kobe, Japan, May 19-23 (2013).

4.(1432) Katsuhiro Tomioka and Takashi Fukui:" Integration of III-V nanowires on Si and their applications(Invited), " The 40th International Symposium on Compound Semiconductors (ISCS 2013), Kobe, Japan, May 19-23 (2013).

5.(1433) Y. Kohashi, S. Hara, and J. Motohisa:" Influence of V/III Ration on the Growth of InGaAs Nanowires in Selective-Area MOVPE, "The 40th International Symposium on Compound Semiconductors (ISCS 2013), Kobe, Japan, May 19-23 (2013).

6.(1434) Y. Kumazaki, A. Watanabe, R. Jinbo, Z. Yatabe and T. Sato:" Electrochemical Formation and Optical Characterization of GaN Porous Structures, "The 40th International Symposium on Compound Semiconductors (ISCS 2013), Kobe, Japan, May 19-23 (2013).

7.(1435) R. Kuroda and S. Kasai: "GaAs Nanowire FET-integrated Threshold Logic Circuit," 22nd International Workshop on Post-Binary ULSI Systems, Toyama International Conference Center, Toyama, Japan, May 21 (2013).

8.(1436) G. Tangim, S. Yanushkevich, S. Kasai, and V. Shmerko:" Noise-Tolerant Model of a Ternary Inverter Based on Markov Random Field, "IEEE 43rd International Symposium on Multiple-Valued Logic (ISMVL-2013), May 21-24 (2013).

9.(1437) Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui:" Zn-compensating effect of channel of InGaAs nanowire/Si heterojunction tunnel FET and steep-turn on switching property,"the 2013 Europe Material Research Society (E-MRS) Spring Meeting, Strasbourg, France, May 27-31 (2013).

10.(1438) M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui:" ITO/p-InP Hetero-Junction NW-Array Solar Cells,"the 2013 Europe Material Research Society (E-MRS) Spring Meeting, Strasbourg, France, May 27-31 (2013).

11.(1439) T. Hashizume, Y. Hori and T. Sato: "Interface control of GaN-based heterostrcutures for power switching transistors (invited), "6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), Fukuoka, Japan, June 2-6 (2013).

12.(1440) Katsuhiro Tomioka and Takashi Fukui:"III-V nanowire channels on Si; vertical FET applications (invited),"2013 Silicon nanoelectronics Workshop (SNW 2013), Kyoto, Japan, June 9-10 (2013).

13.(1441) Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka:" III-V Compound Semiconductor Nanowire Solar Cells (Invited), "2013 Conference on Lasers and Electro-Optics (CREO:2013), San Jose, USA, June 9-14 (2013).

14.(1442) M. Fischer, S. Sakita, M. T. Elm, P. J. Klar, and S. Hara:" Selective-Area Growth of MnAs Nanoclusters for New Planar Magnetoelectronic Devices, "the 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013), Kanazawa, Japan, June 17-20, (2013).

15.(1443) Katsuhiro Tomioka and Takashi Fukui:"Gate-first process and EOT-scaling of III-V nanowire-based vertical transistors on Si, "71st Device Research Conference (DRC 2013), Notre Dame, USA, June 23-26 (2013).

16.(1444) M. Sato, X. Yin, and S. Kasai: "Study on the nonlinear electrical characteristics in the GaAs-based three-branch nanowire junction devices,"2013 Asia-PacificWorkshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2013), Seoul, Korea, Jun. 26-28 (2013).

17.(1445) Tomotsugu Ishikura, Zhixin Cui, Keita Konishi, Joungeob Lee and Kanji Yoh: " Spin accumulation at the Fe/Si interface and two types of Hanle characteristics, " 20th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-20) and 16th International Conference on Modulated Semiconductor Structures(MSS-16), Wroclow, Poland, July 1 - 5 (2013).

18.(1446) Zhixin Cui, R. Perumal, T. Ishikura, and Kanji Yoh:" Observation of Direct Spin Injection from NiFe into an InAs Nanowire,"20th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-20) and 16th International Conference on Modulated Semiconductor Structures(MSS-16), Wroclow, Poland, July 1 - 5 (2013).

19.(1447) T. Wada, Y. Kohashi, S. Hara, and J. Motohisa:" Study on the Lateral Growth on GaAs Nanowires, "the 32nd Electronic Materials Symposium (EMS-32), Moriyama, Shiga, Japan, July 10-12 (2013).

20.(1448) Y. Kumazaki, A. Watanabe, R. Jinbo, Z. Yatabe and T. Sato:" Electrochemical Formation and Optical Characterization of GaN Porous Structures, "the 32nd Electronic Materials Symposium (EMS-32), Moriyama, Shiga, Japan, July 10-12 (2013).

21.(1449) K. Tomioka and T. Fukui: " III-V Nanowire/Si Heterojunction Tunnel Field-Effect Transistors(Invited),"the 32nd Electronic Materials Symposium (EMS-32), Moriyama, Shiga, Japan, July 10-12 (2013).

22.(1450) M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui: " Fabrication of ITO/p-InP hetero-junction nanowire-array solar cells, "the 32nd Electronic Materials Symposium (EMS-32), Moriyama, Shiga, Japan, July 10-12 (2013).

23.(1451) F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui: " Growth of Wurtzite InP/GaP Core-shell Nanowires by Selective-area Metal Organic Vapor Phase Epitaxy, "the 32nd Electronic Materials Symposium (EMS-32), Moriyama, Shiga, Japan, July 10-12 (2013).

24.(1452) Y. Tadokoro, S. Kasai, and A. Ichiki:" A proposal of the simple non-dynamical delay network exhibiting stochastic resonance, "The First International Conference on Nanoenergy, Perugia, Italy, Jul. 10-13 (2013).

25.(1453) S. Kasai, T. Tanaka, and Y. Abe: "Electron Brownian ratchet using a GaAs nanowire with multiple asymmetric gates,"The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), Matsue, Japan, July 22 - 26 (2013).

26.(1454) Tomotsugu Ishikura, Zhixin Cui, and Kanji Yoh:" Enhanced spin injection by thermal anneal in NiFe/MgO/n-Si spin valve, "The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), Matsue, Japan, July 22 - 26 (2013).

27.(1455) Tomotsugu Ishikura, Zhixin Cui, and Kanji Yoh:" Spin injection enhancement in ferromagnet/InAs spin valves by interface resistance control, "Seventh international school and conference on Spintronics and quantum information technology (Spintech- VII), Chicago, USA, July 29 - August 2 (2013).

28.(1456) Zhixin Cui, R. Perumal, T. Ishikura, and Kanji Yoh:" Observation of Direct Spin Injection into an [110] InAs Nanowire, "Seventh international school and conference on Spintronics and quantum information technology (Spintech-VII), Chicago, USA, July 29 - August 2 (2013).

29.(1457) S. Hara, H. Fujimagari, S. Sakita, and M. Yatago:" Difference in Formation of Ferromagnetic MnAs Nanoclusterson III-V Semiconducting Nanowire Templates (invited), "the Nano Science + Engineering Conferences, the SPIE Optics + Photonics Conferences 2013, San Diego, California, USA, August 25-29 (2013).

30.(1458) T. Nakano, M. Chiba, and M. Akazawa:" Dependence of ALD-Al2O3/InAlN interface properties on fabrication process, "10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, August 25-30 (2013).

31.(1459) Y. Kumazaki, N. Azumaishi, T. Sato, T. Hashizume, H. Ueda, M. Kanechika, and H. Tomita:"Selective etching of p-GaN layers for normally-off AlGaN/GaN HEMTs by electrochemical process, "10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, August 25-30 (2013).

32.(1460) J. T. Asubar, K. Ohi, K. Nishiguchi, and T. Hashizume:" Drain Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs, "10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, August 25-30 (2013).

33.(1461) Y. Hori, Z. Yatabe and T. Hashizume:" Characterization and Control of MOS interface states in GaN-based MOS-HEMTs using Al2O3 Gate Insulator, "10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, August 25-30 (2013).

34.(1462) Z. Yatabe, Y. Hori, and T. Hashizume:" Interface state characterization of Al2O3/ AlGaN/GaN structure with inductively coupled plasma etched AlGaN surface, " 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, August 25-30 (2013).

35.(1463) K. Tomioka and T. Fukui:" InGaAs nanowire FETs on Si and steep subthresholdslope transistors(Invited), " 10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013), Hakodate, Japan, Sep.2-5 (2013).

36.(1464) W.-C. Ma and T. Hashizume:" Effect of intermediate AlGaN layer on properties of GaN Schottky diodes,"10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013), Hakodate, Japan, Sep.2-5 (2013).

37.(1465) Y. Yatabe and T. Hashizume:" Impact of dry etching of AlGaN on interface properties of Al2O3/AlGaN/GaN structure, "10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013), Hakodate, Japan, Sep.2-5 (2013).

38.(1466) J. T. Asubar, K. Nishiguchi, and T. Hashizume:"Current stability characterization of AlGaN/GaN HEMT using a dual-gate structure, "10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013), Hakodate, Japan, Sep.2-5 (2013).

39.(1467) T. Wada, M. Ikebe, and E. Sano:" 60-GHz, 9-mW wake-up receiver for shortrange wireless communications, " 39th European Solid-State Circuits Conference, Bucharest, Romania, Sept. 16-20 (2013).

40.(1468) Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka:" Compound Semiconductor Nanowire Solar Cells (Invited), "JSAP-MRS Joint Symposia, Kyoto, Japan, September 16-20(2013).

41.(1469) Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka:" III-V Compound Semiconductor Nanowire Solar Cells (Invited), "12th IUMRS ICAM, Qingdao, China, September 22-28(2013).

42.(1470) E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui: "InGaAs axial junction nanowire array solar cells with AlInP passivation layer, "the 5th International Conference on One-dimensional Nanomaterials (ICON2013), Annecy, France, Sept. 23-26 (2013).

43.(1471) F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui:"Wurtzite InP/GaP core-shell nanowires toward direct band gap transition, "the 5th International Conference on One-dimensional Nanomaterials (ICON2013), Annecy, France, Sep. 23-26 (2013).

44.(1472) H. Fujimagari, S. Sakita, and S. Hara:" Fabrication and Structural Characterization of Vertical Free-Standing InAs Nanowires Hybridized with Ferromagnetic MnAs Nanoclusters, "the 2013 International Conference on Solid State Devices and Materials (SSDM 2013), Fukuoka, Japan, September 24-27 (2013).

45.(1473) T. Nakano, M. Chiba, and M. Akazawa:" Effects of High-Temperature Annealing on Properties of Al2O3/InAlN Interface Formed by Atomic Layer Deposition, "Abstracts of 2013 International Conference on Solid State Devices and Materials (SSDM 2013), Fukuoka, Japan, September 24-27 (2013).

46.(1474) D. Uchida, M. Ikebe, J. Motohisa, E. Sano, and A. Kondou:"CMOS common-mode filter with gyrator-C network, "2013 Int'l Conf. Solid State Devices and Materials (SSDM 2013), Fukuoka, Japan, September 24-27 (2013).

47.(1475) Y. Hori, T. Sato and T. Hashizume:" Control of Insulated gate interfaces on Al- GaN/GaN heterostructures for power devices (invited), "IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Columbus, Ohio, USA, Oct. 27-29 (2013).

48.(1476) Katsuhiro Tomioka and Takashi Fukui:"Vertical III-V Nanowire-Channel on Si (Invited), "224th ECS meeting, San Francisco, USA, Oct. 27 - Nov.1 (2013).

49.(1477) Y. Kumazaki, A. Watanabe, Z. Yatabe and T. Sato:" Structural and Optical Characterization of GaN Porous Structures Formed by Photo-assisted Electrochemical Process, "224th ECS meeting, San Francisco, USA, Oct. 27-Nov. 1 (2013).

50.(1478) T. Sato, Y. Kumazaki, R. Jinbo and Z. Yatabe:"Photoabsorption and Photoelectric Conversion Properties of InP Porous Structures Formed by Electrochemical Process, "224th ECS meeting, San Francisco, USA, Oct. 27-Nov. 1 (2013).

51.(1479) Katsuhiro Tomioka and Takashi Fukui:" III-V/Si Heterojunctions for Steep Subthreshold -Slope Transistor (Invited), "Third Berkeley Symposium on Energy Efficient Electronic Systems, Berkeley, USA, Oct. 28 - 29 (2013).

52.(1480) Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka:" III-V Compound Semiconductor Nanowire Solar Cells (Invited), "TUM-IAS Focus Workshop on " Advances in Semiconductor Nanowire-based Photonics, " Munich, Germany, Oct. 28-29 (2013).

53.(1481) M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui:" ITO/p-InP Heterojunction NW-Array Solar Cells,"TUM-IAS Focus Workshop on"Advances in Semiconductor Nanowire-based Photonics, "Munich, Germany, Oct. 28-29 (2013).

54.(1482) Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai Fumiya Ishizaka and Katsuhiro Tomioka:" III-V semiconductor nanowires and their photovoltaic device applications (Invited), "12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures in conjunction with 21st International Conference on Scanning Probe Microscopy (ACSIN-12 & ICSPM21), Tsukuba, Japan, November 4 - 8 (2013).

55.(1483) M. Akazawa, T. Nakano, and M. Chiba:" Investigation of High-Temperature Annealed ALD-Al2O3/InAlN Interface, "12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures in conjunction with 21st International Conference on Scanning Probe Microscopy (ACSIN-12 & ICSPM21), Tsukuba, Japan, November 4 - 8 (2013).

56.(1484) E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui:" Fabrication and Characterization of InGaAs Axial Junction Nanowire Array Solar Cells, "the 26th International Microprocesses and Nanotechnology Conference (MNC 2013), Sapporo, Japan, November 5-8 (2013).

57.(1485) H. Kato, S. Sakita, M. Fischer, and S. Hara:" Fabrication and Characterization of Laterl MnAs Nanowires by Selective-Area Metal-Organic Vapor Phase Epitaxy, " the 26th International Microprocesses and Nanotechnology Conference (MNC 2013), Sapporo, Japan, November 5-8 (2013).

58.(1486) Y. Imai, M. Sato, T. Tanaka, and S. Kasai:" Study on Weak Biological Signal Detection Utilizing Stochastic Resonance in a GaAs-based Nanowire FET, "the 26th International Microprocesses and Nanotechnology Conference (MNC 2013), Sapporo, Japan, November 5-8 (2013).

59.(1487) Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai Fumiya Ishizaka and Katsuhiro Tomioka:" Selective area growth of III-V semiconductor nanowires and their photovoltaic and electron device applications (Invited),"Nanowires 2013, Rehovot, Israel, November 12-15 (2013)

60.(1488) Katsuhiro Tomioka, Masatoshi Yoshimura, Eiji Nakai, and Takashi Fukui:" Demonstration of P-Channel Tunnel FET Using Zn-Doped InAs Nanowire/Si Heterojunction and Doping Effect, "MRS fall meeting 2013, Boston, USA, Dec. 1-6 (2013).

61.(1489) M. Fischer, S. Sakita, H. Kato, M. T. Elm, S. Hara, and P. J. Klar:" Magnetotransport Measurements on Individual MnAs Nanoclusters and Nanocluster Arrangements," the 2013 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, December 1-6 (2013).

62.(1490) S. Hara:"Bottom-Up Formation of Vertical Free-Standing Semiconductor Nanowires Hybridized with Ferromagnetic Nanoclusters (Invited), "the 8th InternationalConference on Processing and Manufacturing of Advanced Materials(THERMEC 2013), Las Vegas, Nevada, USA, December 2-6 (2013).

63.(1491) Katsuhiro Tomioka, Masatoshi Yoshimura, Fumiya Ishizaka, Eiji Nakai, and Takashi Fukui:" Integration of III-V nanowires on Si: From high-performance vertical FET to steep-slope switch  (Invited), " 2013 International Electron Devices Meeting (IEDM 2013), Washington DC, USA, Dec. 9-11 (2013).

64.(1492) Y. Kohashi, S. Hara, and J. Motohisa:" Composition-Dependent Growth Dynamics of InGaAs Nanowires in Selective-Area Metal-Organic Vapor Phase Epitaxy, " the 2013 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013), Poipu Beach, Kauai, Hawaii, USA, December 8-13 (2013).

65.(1493) S. Yanase, Y. Kohashi, S. Hara, and J. Motohisa:" A New Growth Mode of InP Nanowires in Selective-Area Metal-Organic Vapor Phase Epitaxy, "the 2013 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013), Poipu Beach, Kauai, Hawaii, USA, December8-13 (2013).

66.(1494) T. Maemoto, Y. Sun, S. Sasaki, K. Koike, M. Yano, S. Kasai, and S. Sasa:" ZnObased transparent nanodiodes and thin-film-transistor applications (invited), "SPIE Photonics West, San Francisco, USA, Feb. 1-6 (2014).

67.(1495) M. Aono, S.-J. Kim, M. Naures, S. Kasai, and H. Miwa:"Amoeba-inspired Nanoarchitectonic Computing (invited),"MANA International Symposium 2014, Tsukuba, Japan, Mar. 5-7 (2014).

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