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 ｜2014｜｜2013｜｜2012｜｜2011｜ ｜2010｜ ｜2009｜｜2008｜
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｜2014｜｜2013｜｜2012｜｜2011｜｜2010｜｜2009｜｜2008｜
｜2007｜｜2006｜｜2005｜｜2004｜｜2003｜｜2002｜｜2001｜
学術論文
2014
  1. Y. Otsu, K. Kubo, M. Ikebe, and E. Sano, “Design and fabrication of 2.4 GHz pre-biased rectifier,” Analog Integrated Circuits and Signal Processing, vol. 79, no. 2, pp. 301-307, 2014.

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2013
  1. K. Takahagi, H. Matsushita, T. Iida, M. Ikebe, Y. Amemiya, and E. Sano, “Low-power wake-up receiver with subthreshold CMOS circuits for wireless sensor networks,” Analog Integrated Circuits and Signal Processing, vol. 75, no. 2, pp. 199-205, 2013.

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2012
  1. T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E.Sano, V. Popov, M. Ryzhii, and V. Ryzhii, “Graphene-based devices in terahertz science and technology,” J. Phys. D: Appl. Phys., vol. 45, pp.303001-1-9, 2012.
  2. T. Tanaka, K. Mori, E. Sano, B. Fugetsu, and H. Yu, “The Luttinger-liquid behavior in single-walled carbon nanotube networks,” Physica E, vol. 44, pp. 997-1001, 2012.
  3. K. Takahagi, Y. Otsu, and E. Sano, “2.45 GHz high-gain electrically small antenna with composite right/left-handed ladder structure,” Electron. Lett., vol. 48, no. 16, pp. 971-972, 2012.
  4. Yuya Takatsuka, Kazuhiro Takahagi, Eiichi Sano, Victor Ryzhii, and Taiichi Otsuji, “Gain enhancement in graphene terahertz amplifiers with resonant structures,” J. Appl. Phys., vol. 112, pp. 033103-1-4, 2012.

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2011
  1. E. Sano and T. Otsuji, “Performance prediction of complementary field-effect transistor circuits using graphene with band gap induced by site-potential asymmetry,” Jpn. J. Appl. Phys., vol. 50, no. 11, pp. 115101-1-6, 2011.
  2. K. Takahagi and E. Sano, “High-gain silicon on-chip antenna with artificial dielectric layer,” IEEE Trans. Antennas Propag., vol. 59, no. 10, pp. 3624-3629, 2011.
  3. E. Sano, “Impact of site-potential asymmetry on electron transport in graphene,” Jpn. J. Appl. Phys., vol. 50, no. 9, pp. 090205-1-3, 2011.
  4. E. Sano, “Monte Carlo simulation of ultrafast electron relaxation in graphene,” Appl. Phys. Express, vol. 4, no. 8, pp. 085101-1-3, 2011.
  5. Y. Takatsuka, E. Sano, V. Ryzhii, and T. Otsuji, “Terahertz amplifiers based on multiple graphene layer with field-enhancement effect,” Jpn. J. Appl. Phys., vol. 50, no. 7, pp. 070118-1-4, 2011..
  6. A. El Moutaouakil, H.-C. Kang, H. Handa, H. Fukidome, T. Suemitsu, E. Sano, M. Suemitsu, and T. Otsuji, “Room temperature logic inverter on epitaxial graphene-on-silicon device,” Jpn. J. Appl. Phys., vol. 50, no. 7, pp. 070113-1-4, 2011.

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2010
  1. T. Tanaka, E. Sano, M. Imai, and K. Akiyama, “Electrical conductivity of carbon-nanotube/cellulose composite paper,” J. Appl. Phys., vol. 107, no. 5, pp. 054307-1-4, 2010.
  2. T. Tanaka, K. Tomioka, S. Hara, J. Motohisa, E. Sano, and T. Fukui, “Vertical surrounding gate transistors using single InAs nanowires grown on Si,” Appl. Phys. Express, vol. 3, pp. 025003-1-3, 2010.
  3. T. Tanaka, E. Sano, M. Imai, and K. Akiyama, "Low-Frequency Noise in Carbon-Nanotube/Cellulose Composite Paper," Jpn. J. Appl. Phys., vol. 49, 055101, 2010
  4. M. Imai, K. Akiyama, T. Tanaka, and E. Sano, “Highly strong and conductive carbon nanotube/cellulose composite paper,” Compos. Sci. Technol., vol. 70, no. 10, pp. 1564-1570, 2010.
  5. B. Fugetsu, E. Sano, H. Yu, K. Mori, and T. Tanaka, “Graphene oxide as dyestuffs for the creation of electrically conductive fabrics,” Carbon, vol. 48, no. 12, pp. 3340-3345, 2010.
  6. T. Otsuji, H. Karasawa, T. Watanabe, T. Suemitsu, M. Suemitsu, E. Sano, W. Knap, and V. Ryzhii, “Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures,” C. R. Physique, vol. 11, pp. 421-432, 2010.

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2009
  1. Y. M. Meziani, T. Nishimura, H. Handa, H. Tsuda, T. Suemitsu, W. Knap, T. Otsuji, E. Sano, G. M. Tsymbalov, and V. V. Popov, “Efficiency enhancement of emission of terahertz radiation by optical excitation from dual grating gate HEMT,” J. Nanophoton., vol. 3, pp. 031980, 2009.
  2. E. Sano and T. Otsuji, “Bandgap engineering of bilayer graphene for field-effect transistor channels,” Jpn. J. Appl. Phys., vol. 48, no. 9, pp. 091605-1-3, 2009.
  3. T. Otsuji, T. Nishimura, Y. Tsuda, Y. M. Meziani, T. Suemitsu, and E. Sano, “Emission and intensity modulation of terahertz electromagnetic radiation using 2-dimensional plasmons in dual-grating-gate HEMT's,” Int. J. High Speed Electronics and Systems, vol. 19, no. 1, pp. 33-53, 2009..
  4. E. Sano and T. Otsuji, “Source and drain structures for suppressing ambipolar characteristics of graphene field-effect transistors,” Appl. Phys. Express, vol. 2, pp. 061601-1-3, 2009.
  5. E. Sano and T. Otsuji, “Theoretical evaluation of channel structure in graphene field-effect transistors,” Jpn. J. Appl. Phys., vol. 48, no. 4, pp. 041202-1-5, 2009.
  6. E. Sano and T. Otsuji, “Performance prediction of graphene-channel field-effect transistors,” Jpn. J. Appl. Phys., vol. 48, pp. 011604-1-4, 2009.

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2008
  1. Y. M. Meziani, M. Hanabe, T. Otsuji, and E. Sano, "Bolometric detection of terahertz radiation from new grating gates device," Physica Status. Solidi (c), Vol. 5, No. 1, pp. 282-285, 2008.
  2. M. Ikebe, Y. Takada, M. Ohuchi, J. Motohisa, and E. Sano, “The design of high frequency true single phase clocking divider-by-3 circuit,” Int. J. Circuits, Systems and Signal processing, vol. 2, no. 3, pp.219-228, 2008.
  3. E. Sano, S. Taga, and K. Inafune, “Mode-expansion analysis of evanescent modes excited by electrons moving above metal grating,” Jpn. J. Appl. Phys., vol. 47, no. 8, pp.6359-6360, 2008.
  4. T. Otsuji, Y. M. Meziani, T. Nishimura, T. Suemitsu, W. Knap, E. Sano, T. Asano and V. V. Popov, “Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems,” J. Phys.: Condens. Matter, vol. 20, 384201, 2008..
  5. B. Fugetsu, E. Sano, M. Sunada, Y. Sambongi, T. Shibuya, X. Wang, and T. Hiraki, “Electrical conductivity and electromagnetic interference shielding efficiency of carbon nanotube/cellulose composite paper,” Carbon, vol. 46, pp. 1256-1258, 2008..
  6. Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, G. M. Tsymbalov, D. Coquillat, and F. Teppe, “Room temperature terahertz emission from grating coupled two-dimensional plasmons,” Appl. Phys. Lett., vol. 92, pp. 201108-1-3, 2008.

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2007
  1. E. Sano and T. Otsuji, “HEMT-based nanometer devices toward tera-hertz era,” Int. J. High Speed Electronics and Systems, vol. 17, no. 3, pp.509-520, 2007.
  2. S. Taga, K. Inafune, and E. Sano, “Analysis of Smith-Purcell radiation in optical region,” Optics Express, vol. 15, pp. 16222-16229, 2007.
  3. E. Sano, “Micromagnetic simulation of coupled magnetic oscillators driven by spin-transfer torque,” Jpn. J. Appl. Phys., vol. 46, no. 46, pp.L1123-L1125, 2007.
  4. Y. Moubarak Meziani, T. Otsuji, M. Hanabe, and E. Sano, “Room temperature generation of terahertz radiation from a grating-bicoupled plasmon-resonant emitter: Size effect,” Appl. Phys. Lett., vol. 90, no. 6, pp. 061105-1-3, 2007.
  5. T. Otsuji, Y. Moubarak Meziani, M. Hanabe, T. Nishimura, and E. Sano, “Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant emitter,” Solid-State Electron., vol. 51, pp. 1319-1327, 2007.
  6. K. Narahara, T. Nakamichi, T. Otsuji, and E. Sano, “Development of solitons in composite right- and left-handed transmission lines periodically loaded with varactors with symmetrical capacitance-voltage characteristics,” Jpn. J. Appl. Phys., vol. 46, no. 5A, pp. 3123-3125, 2007.
  7. K. Narahara, T. Nakamichi, T. Suemitsu, T. Otsuji, and E. Sano, “Development of solitons in composite right- and left-handed transmission lines periodically loaded with Schottky varactors,” J. Appl. Phys., vol. 102, pp. 024501-1-4, 2007
  8. M. Makihara, M. Ikebe, and E. Sano, “Evaluation of digitally controlled PLL by clock-period comparison,” IEICE Trans. Electron., vol. E90-C, no. 6, pp. 1307-1310, 2007.
  9. M. Hanabe, Y. Moubarak Meziani, T. Otsuji, E. Sano, and T. Asano, “Possibility of terahertz injection-locked oscillation in an InGaP/InGaAs/GaAs two-dimensional plasmon-resonant photomixer,” IEICE Trans. Electron., vol. E90-C, no. 5, pp. 949-954, 2007.
  10. Y. Moubarak Meziani, M. Hanabe, T. Otsuji, and E. Sano, “Threshold behavior of photoinduced plasmon-resonant self-oscillation in a new interdigitated grating gates device,” Jpn. J. Appl. Phys., vol. 46, no. 4B, pp. 2409-2412, 2007.

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2006
  1. T. Otsuji, Y. Moubarak Meziani, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, “Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems,” Appl. Phys. Lett., vol. 89, no. 26, pp. 263502-1-3, 2006.
  2. K. Narahara, T. Otsuji, and E. Sano, “Generation of electrical short pulse using Schottky line periodically loaded with electronic switches,” J. Appl. Phys., vol. 100, no. 2, pp. 024511 1-5, 2006.
  3. T. Nishimura, M. Hanabe, M. Miyamoto, T. Otsuji, and E. Sano, “Terahertz frequency multiplier operation of two dimensional plasmon resonant photomixer,” IEICE Trans. Electron., vol. E89-C, no. 7, pp. 1005-1011, 2006.
  4. M. Hanabe, T. Nishimura, M. Miyamoto, T. Otsuji, and E. Sano, “Structure-sensitive design for wider tunable operation of terahertz plasmon-resonant photomixer,” IEICE Trans. Electron., vol. E89-C, no. 7, pp. 985-992, 2006.
  5. K. Inafune, E. Sano, H. Matsuzaki, T. Kosugi, and T. Enoki, “W-band active integrated antenna oscillator based on full-wave design methodology and 0.1-mm gate InP-based HEMTs,” IEICE Trans. Electron., vol. E89-C, no. 7, pp. 954-958, 2006.
  6. K. Narahara, T. Otsuji, and E. Sano, “Pulse compression by quasi-steady propagation along switch lines,” Jpn. J. Appl. Phys., vol. 45, no. 7, pp. 5692-5695, 2006.
  7. ] E. Sano, “A chaotic wireless communication system based on collective synchronization among wireless nodes,” IEICE Electronics Express, vol. 3, no. 12, pp. 262-268, 2006.
  8. T. Otsuji, M. Hanabe, T. Nishimura, and E. Sano, “A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure,” Optics Express, vol. 14, no. 11, pp. 4815-4825 (2006).
  9. T. Tanaka, M. Akazawa, E. Sano, M. Tanaka, F. Miyamaru, and M. Hangyo, “Transmission Characteristics through Two-Dimensional Periodic Hole Arrays Perforated in Perfect Conductors,” Jpn. J. Appl. Phys., vol. 45, no. 5A, pp. 4058-4063 (2006).
  10. K. Inafune and E. Sano, “Theoretical investigation of artificial magnetic conductors using an effective medium model and finite difference time domain method,” Jpn. J. Appl. Phys., vol. 45, no. 5A, pp. 3981-3987 (2006).

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2005
  1. M. Akazawa, Y. Yamazaki, and E. Sano, “Terahertz transmission property of a thin metal hole-array filter,” Japan J. Appl. Phys., vol. 44, no. 49, pp. L1481-L1483 (2005).
  2. E. Sano, “Numerical investigation of optical chaotic multiplexing communications,” Japan J. Appl. Phys., vol. 44, no. 8, pp. 6095-6097 (2005).
  3. M. Tanaka, F. Miyamaru, M. Hangyo, T. Tanaka, M. Akazawa, and E. Sano, “Effect of a thin dielectric layer on terahertz transmission characteristics for metal hole arrays,” Optics Lett., vol. 30, no. 10, pp. 1210-1212 (2005).

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2004
  1. T. Tanaka, M. Akazawa, and E. Sano; "Terahertz Wave Filter from Cascaded Thin-Metal-Film Meshes with a Triangular Array of Hexagonal Holes," Jpn. J. Appl. Phys., Vol. 43, Pt. 2, No. 2B, pp. L287-L289 (2004).
  2. T. Hashizume, S. Anantathanasarn, N. Negoro, E. Sano, H. Hasegawa, “Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers,” Japan J. Appl. Phys., vol. 43, no. 6B, pp. L777-L779, 2004.
  3. H. Nosaka, E. Sano, K. Ishii, M. Ida, K. Kurishima, S. Yamahata, T. Shibata , H. Fukuyama, M. Yoneyama, T. Enoki, and M. Muraguchi, “A 39-to-45-Gbit/s multi-data-rate clock and data recovery circuit with a robust lock detector,” IEEE J. Solid-State Circuits, vol. 39, pp. 1361-1365, 2004.
  4. E. Sano, K. Inafune, and M. Akazawa, “RF CMOS inductor shielded by a high-impedance surface,” IEICE Electronics Express, vol. 1, no. 8, pp. 232-236, 2004.
  5. E. Sano, “Simulation of nanometer-scale semiconductor devices considering quantum effects,” Int. J. RF and Microwave Computer-Aided Engineering, vol. 14, no. 3, pp. 283-289, 2004.
  6. 佐野栄一、”テラヘルツ発振を目指したデバイス技術の展望,” 信学会論文誌, vol. J87-C, no. 5, pp. 413-423, 2004.

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2003
  1. K. Ishii, H. Nosaka, M. Ida, K. Kurishima, S. Yamahata, T. Enoki, T. Shibata, and E. Sano; "4-bit multiplexer/demultiplexer chip set for 40-Gbit/s optical communication systems," IEEE Trans. on Microwave Theory & Techniques, Vol. 51, No. 11, pp. 2181-2187 (2003).
  2. E. Sano; "A theoretical comparison of strained-Si-on-insulator metal-oxide-semiconductor field-effect transistors and conventional Si-on-insulator metal-oxide-semiconductor field-effect transistors using a drift-diffusion-based simulator," Jpn. J. Appl. Phys., Vol. 42, Pt. 1, No. 10, pp.6346-6353 (2003).
  3. E. Sano; "Analytical expressions for maximum operating frequencies of emitter-coupled logic and source-coupled FET logic toggle flip-flops," IEICE Trans. Electron., Vol. E86-C, No. 9, pp. 1879-1885 (2003).
  4. E. Sano; "Simulation of ultra-thin body silicon-on-insulator MOSFETs based on drift-diffusion model incorporating an effective potential," Jpn J. Appl. Phys., Vol. 42, Pt. 1, No. 8, pp. 4987-4991 (2003).
  5. E. Sano; "Simulation of nanoscale InAlAs/InGaAs high electron mobility transistors based on drift-diffusion model incorporating an effective potential," JapanJ. Appl. Phys., Vol. 42, Pt. 1, No. 7A, pp. 4261-4263 (2003).

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2002
  1. K. Ishii, H. Nosaka, M. Ida, K. Kurishima, T. Enoki, T. Shibata, and E. Sano; "High-input-sensitivity, low-power 43 gbit/s decision circuit using InP/InGaAs DHBTs," Electron. Lett. 38 (12), pp. 557-558 (2002).
  2. E. Sano; "Simulation of Carrier Transport across Heterojunctions Based on Drift-Diffusion Model Incorporating an Effective Potential," Jpn. J. Appl. Phys., Vol. 41, Pt. 2, No. 11B, pp. L1306-L1308 (2002).
  3. K. Ishii, H. Nosaka, H. Nakajima, K. Kurishima, M. Ida, N. Watanabe, Y. Yamane, E. Sano, and T. Enoki; "Low-power 1 : 16 DEMUX and one-chip CDR with 1 : 4 DEMUX using InP-InGaAs heterojunction bipolar transistors," IEEE J Solod-St. Circ. 37 (9), pp. 1146-1151 (2002).
  4. E. Sano; "Monte Carlo Simulation of InP/InGaAs Heterojunction Bipolar Transistors Considering Quantum Effects through an Effective Potential,", Jpn. J. Appl. Phys., Vol. 41, Pt. 2, No. 9A/B, pp. L981-L982 (2002).

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2001
  1. K. Murata, K. Sano, E. Sano, S. Sugitani, and T. Enoki;"Fully monolithic integrated 43 Gbit/s clock and data recovery circuit in InPHEMT technology," Electron. Lett. 37 (20), pp. 1235-1237 (2001).
  2. K. Sano, K. Murata, T. Otsuji, T. Akeyoshi, N. Shimizu, and E. Sano; "An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode," IEEE J. Solid-St. Circ. 36 (2), pp. 281-289 (2001).
  3. E. Sano; "High-speed lightwave communication ICs based on III-Vcompound semiconductors," IEEE Commun. Mag. 39 (1), pp.154-158 (2001).

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国際会議
2013
  1. D. Uchida, M. Ikebe, J. Motohisa, E. Sano, and A. Kondou, “CMOS common-mode filter with gyrator-C network,” 2013 Int'l Conf. Solid State Devices and Materials (Fukuoka, Japan), Sept. 25-27, 2013, pp. 886-887.
  2. T. Wada, M. Ikebe, and E. Sano, “60-GHz, 9-mW wake-up receiver for short-range wireless communications,” 39th European Solid-State Circuits Conference (Bucharest, Romania), Sept. 16-20, 2013, pp. 383-386.

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2012
  1. K. Kim, M. Ikebe, and J. Motohisa, and E. Sano, “A 11b 5.1μW multi-slope ADC with a TDC using multi-phase clock signals,” IEEE International Conference on Electronics, Circuits, and Systems (Seville, Spain), Dec. 9-12, 2012, pp. 512-515.
  2. D. Uchida, M. Ikebe, J. Motohisa, and E. Sano, “A ramp-wave generator with interleaved DACs for single-slope ADC,” 2012 Int'l Conf. Solid State Devices and Materials (Kyoto, Japan), Sept. 25-27, 2012, pp. 150-151. (Sept. 26)
  3. T. Tanaka, E. Sano, and B. Fugetsu, “Carbon nanotube network with reduced sheet resistance,” EMRS (Warsaw, Poland), Sept. 17-21, 2012, poster paper G1.

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2011
  1. A. Kondou, M. Ikebe, J. Motohisa, Y. Amemiya, and E. Sano, “A 0.6-4.5 GHz Inductorless CMOS Low Noise Amplifier With Gyrator-C network,” IEEE International Conference on Electronics, Circuits, and Systems (Beirut, Lebanon), Dec. 11-14, 2011, pp. 326-329..
  2. K. Takahagi, H. Matsushita, T. Iida, M. Ikebe, Y. Amemiya, and E. Sano, “Low-power wake-up receiver with subthreshold CMOS circuits for wireless sensor networks,” 14th IEEJ Int’l Analog VLSI Workshop (Bali, Indonesia), Nov. 2-4, 2011..
  3. K. Kim, M. Ikebe, A. Kondou, J. Motohisa, Y. Amemiya, and E. Sano, “A 12b low power multi-slope ADC with time to digital converter,” 2011 Int'l Conf. Solid State Devices and Materials (Nagoya, Japan), Sept. 28-30, 2011, pp. 1069-1070.
  4. K. Takahagi, H. Matsushita, T. Iida, M. Ikebe, Y. Amemiya, and E. Sano, “Low-power wake-up receiver with subthreshold CMOS circuits for wireless sensor networks,” 37th European Solid-State Circuits Conference (Helsinki, Finland), Sept. 12-16, 2011, fringe poster 10/C.
  5. B. Fugetsu, H. Yu, L. Sun, E. Sano, K. Mori, and T. Tanaka, “Graphene oxide as dyestuffs for creation of high-performance 3- dimemsional graphene-graphene networks,” Carbon 2011 (Shanghai, China), July 24-29, 2011, paper 288.

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2010
  1. M. Imai, K. Tsuchikawa, and E. Sano, “Corrugated conductive paper for electromagnetic absorbers,” 5th German Microwave Conf. (Berlin, Germany), March 15-17, 2010, pp. 239-242.
  2. T. Tanaka, K. Mori, E. Sano, B. Fugetsu, and H. Yu, “Luttinger-liquid behavior in single-walled carbon nanotube networks,” EMRS (Strasburg, France), June 7-11, 2010, paper P8.82.
  3. E. Sano, T. Tanaka, M. Imai, and K. Akiyama, “Electrical properties of carbon-nanotube/cellulose composite paper,” 18th Int'l Conf. Composites/Nano Engineering (Anchorage, USA), July 4-10, 2010, paper 655.
  4. M. Imai, K. Akiyama, and E. Sano, “Preparation and properties of cellulose/carbon nanotube composite,” 18th Int'l Conf. Composites/Nano Engineering (Anchorage, USA), July 4-10, 2010, paper 283.
  5. T. Iida, T. Asai, Y. Amemiya, and E. Sano, “An offset compensation method using subthreshold CMOS operational amplifiers for fully differential amplifiers,” Integrated Circuits and Devices in Vietnam (ICDV) 2010 (Ho Chi Minh, Vietnam), Aug. 16-18, 2010, pp. 159-164.
  6. K. Takahagi and E. Sano, “High-gain silicon on-chip antenna with artificial dielectric layer,” 2010 Asia-Pacific Radio Science Conf.(Toyama, Japan), Sept. 22-26, 2010, paper DC1-5.
  7. Y. Takatsuka, E. Sano, V. Ryzhii, and T. Otsuji, “THz amplifiers based on multilayer graphene and filed-enhancement structures,” 2nd Int’l Symposium on Graphene Devices (Sendai, Japan), Oct. 27-29, 2010, pp.100-101.
  8. M. Shin, M. Ikebe, J. Motohisa, and E. Sano, “Column parallel single-slope ADC with time to digital converter for CMOS imager,” 17th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2010) (Athens, Greece), Dec. 12-15, 2010, pp. 865-868.

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2009
  1. T. Iida, T. Asai, E. Sano, and Y. Amemiya, “Offset cancellation with subthreshold-operated feedback circuit for fully differential amplifiers,” 2009 IEEE Int'l Conf. Electronics Circuits and Systems (Hammamet, Tunisia), Dec. 13-16, 2009, pp. 140-143.
  2. M. Ikebe, D. Ueo, K. Takahagi, M. Ohuno, Y. Takada, and E. Sano, “A 3.1-10.6 GHz RF CMOS circuits monolithically integrated with dipole antenna,” 2009 IEEE Int'l Conf. Electronics Circuits and Systems (Hammamet, Tunisia), Dec. 13-16, 2009, pp. 17-20.
  3. T. Sato, J. Motohisa, S. Hara, E. Sano, and T. Fukui, “Fabrication and electrical characterization of InAs tubular channel nanowire FETs,” Int'l Sympo. on Advanced Nanodevics and Nanotechnology (Maui, Hawaii), Nov. 29-Dec. 4, 2009, pp. 91-92.
  4. T. Otsuji, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, and E. Sano, “Heteroepitaxial graphene on silicon: Process&device technology for ultra-high frequency devices (invited),” 22nd Int'l Microprocesses and Nanotechnology Conf. (Sapporo, Japan), Nov. 16-19, 2009, paper 17B-3-2.
  5. T. Sato, J. Motohisa, S. Hara, E. Sano, K. Hiruma, and T. Fukui, “Growth of tubular InAs nanowires for FET applications,” 4th Nanowire Growth Workshop NWG 2009 (Paris, France), Oct. 26-27, 2009, p. 79..
  6. K. Takahagi, M. Ohno, M. Ikebe, and E. Sano, “Ultra-wideband silicon on-chip antennas with artificial dielectric layer”, 2009 Int'l Sympo. Intelligent Signal Processing and Communication Systems (Kanazawa, Japan), Dec. 7-9, 2009, pp. 81-84.
  7. K. Kubota, E. Sano, Y. M. Meziani, and T. Otsuji, “Monte Carlo analysis of optical pulse response of plasmon-resonant terahertz emitter,” 2009 Int'l Conf. Solid State Devices and Materials (Sendai, Japan), Oct. 7-9, 2009, pp. 814-815.
  8. T. Iida, T. Asai, E. Sano, and Y. Amemiya, “Level-shift circuit using subthreshold-operated CMOS operational amplifiers,” Proc. 24th International Technical Conference on Circuits/Systems, Computers and Communications (Jeju, Korea), July 5-8, 2009, pp. 209-212.
  9. T. Otsuji, Y. Tsuda, H. Karasawa, T. Suemitsu, M. Suemitsu, E. Sano and V. Ryzhii, “Emission of terahertz radiation from two-dimensional electron systems in semiconductor nanoheterostructures (invited),” Proc. 19th Int. Symp. on Nanostructures: Physics and Technology, Minsk, Belarus, June 22, 2009, pp. 66-68.
  10. E. Sano and T. Otsuji, “Theoretical study on graphene field-effect transistors (invited)”, 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) (Busan, Korea), June 24-26, 2009, paper 1B.2.
  11. E. Sano, K. Akiyama, and M. Imai, “CNT nano-internet: Carbon nanotube/cellulose composite paper for electromagnetic interference shielding,” 1st Intl. Conf. Multifunctional, Hybrid and Nanomaterials (Tours, France), March 15-19, 2009, paper B2.1.115.
  12. Y. Makihara, M. Ikebe, J. Motohisa, and E. Sano, “Frequency and phase lock operation using clock-period comparator,” Proc. of Intl. Symposium on Multimedia and Communication Technology (ISMAC) (Bangkok, Thailand), Jan. 2009, pp. 241-244.

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2008
  1. Y. M. Meziani, T. Suemitsu, T. Otsuji, and E. Sano, "Terahertz Emission from Two-dimensional Plasmons in High-electron-mobility Transistors Stimulated by Optical Signals," Progress in Electromagnetics Research Symposium (PIERS) , Beijing, China, Mar. 26-30, 2008.
  2. Y. Makihara, M. Ikebe, J. Motohisa, and E. Sano, “Phase lock operation by clock-period comparison for all digital PLL,” Intl. Symposium on Topical Problems of Nonlinear Wave Physics (NWP) (Nizhnij Novgorod, Russia), July 2008, pp. 49-50.
  3. M. Ikebe, J. Motohisa, and E. Sano, “A 0.18mm 3GHz true single phase clocking divider-by-3 circuit,” 2008 WSEAS Intl. Conf. on Circuits, Systems, Electronics, Control & Signal Processing (CSECS'08) (Puerto De La Cruz, Tenerife, Canary Islands, Spain), December 15-17, 2008, pp. 110-113.
  4. W. Matsuoka, E. Sano, and T. Otsuji, “Graphene-channel FET characteristics desired for constructing logic circuits,” Intl. Symp. Graphene Devices (Aizu-Wakamatsu, Japan), Nov. 17-19, 2008, pp. 34-35.
  5. Y. M. Meziani, T. Nishimura, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, D. Coquillat, and F. Teppe, "Room temperature generation of terahertz radiation from dual grating gate HEMT’s," 33rd International Conference on Infrared, Millimeter, and Terahertz Waves (CalTech, Pasadena, CA), Sept. 15-19, 2008, M5-D12.
  6. T. Nishimura, H. Handa, H. Tsuda, T. Suemitsu, Y. M. Meziani, W. Knap, T. Otsuji, E. Sano, V. Ryzhii, A. Satou, V. Popov, D. Coquillat, and F. Teppe, "Broadband terahertz emission from dual-grating gate HEMT’s -mechanism and emission spectral profile," Device Research Conference Dig. (Santa Barbara, CA), June 23-25, 2008, pp. 263-264.
  7. Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, and V. Popov, "Room temperature terahertz emission from two-dimensional plasmons in doubly interdigitated grating gatre heterostructure transistors," Conference on Lasers and Elctro-Optics 2008 (San Jose, CA), May 4-9, 2008, paper CTuX2.

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2007
  1. Y. M. Meziani, M. Hanabe, T. Otsuji, and E. Sano, "Bolometer detection of terahertz radiation from new grating gate device," The 15th Int. Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIC-15) Abstracts (Tokyo, Japan), July 23-27, 2007, p. 113.
  2. Y. M. Meziani, M. Hanabe, A. Koizumi, T. Ishibashi, T. Uno, T. Otsuji and E.Sano, "Generation of terahertz radiation from a new InGaP/InGaAs/GaAs double grating gate HEMT device," Conference on Lasers and Elctro-Optics 2007 (Baltimore MD), May 2007, CThI7.
  3. T. Otsuji, T. Suemitsu, Y. M. Meziani, and E. Sano, "Terahertz emission from high electron mobility transistors stimulated by photo-induced plasmon instability (invited)," Virtual Conf. on Nanoscale Science and Technology (VC-NST) Abstract (Fayetteville, AR), Oct. 23, 2007, p. 3.
  4. T. Otsuji, Y. M. Meziani, T. Suemitsu, M. Hanabe, and E. Sano, "Terahertz emission from 2-dimensional plasmons in HEMT's stimulated by optical signals (invited)," Proc. Int. Symp. on Compound Semiconductors (ISCS) (Kyoto, Japan), Oct. 15, 2007, TuBIII-6, p. 144.
  5. T. Otsuji, Y.M. Meziani, M. Hanabe, T. Nishimura, E. Sano, "Room temperature terahertz emission from plasmonresonant high-electron mobility transistors stimulated by optical signals (invited)," Proc. SPIE, vol. 6772, 677220M, pp. 1-7, 2, Sept. 11, Boston, 2007.
  6. Y. M. Meziani, T. Otsuji, and E. Sano, "Emission of terahertz radiation from an interdigitated grating gates HEMT," Dig. IRMMW/THz 2007, (Cardiff, UK), Sept. 2007, pp. 466-467
  7. H. Handa, Y. M. Meziani, M. Hanabe, T. Otsuji, and E. Sano, "Generation of terahertz radiation from a dual grating gates HEMT," 7th Topical Workshop on Heterostructure Microelectronics (TWHM) Abstracts (Chiba, Japan), Aug. 21-24, 2007, pp. 63-64.
  8. Y. M. Meziani, M. Hanabe, A. Koizumi, T. Otsuji, and E. Sano, “Terahertz Emission from InGaP/InGaAs/GaAs Double Grating Gate HEMT Device,” in Optical Terahertz Science and Technology 2007 Technical Digest (The Optical Society of America, Washington, DC) (Orlando FL), March 18-21, 2007, pp.MD12-1-3.
  9. Y. M. Meziani, M. Hanabe, A. Koizumi, T. Otsuji and E. Sano, “Room Temperature Emission of Terahertz Radiation from a New Plasmon Resonant Emitter,” Technical Digest of the Tenth International Symposium on Contemporary Photonics Technology, (Tokyo, Japan), Jan. 2007, Paper No. J-3.
  10. T. Suemitsu, Y. M. Meziani, Y. Hosono, M. Hanabe, T. Otsuji, and E. Sano, “Novel plasmon-resonant terahertz-wave emitter using a double-decked HEMT structure,” 65th Device Research Conf. (South Bend, Indiana), June 2007, pp. 157-158.
  11. K. Inafune, H. Osabe, and E. Sano, “Impact of frequency-selective high-impedance surface reflectors on directivity of ultra-wideband monopole antennas,” International Symposium on Antennas and Propagation (Niigata, Japan), Aug. 2007, pp. 1446-1449.
  12. M. Ikebe, D. Ueo, H. Osabe, K. Inafune, E. Sano, M. Koutani, M. Ikeda, and K. Mashiko, “7-GHz CMOS RF front-end monolithically integrated with inverted-F antenna for wireless sensor system,” 14th International Conference on Solid-state Sensors, Actuators and Microsystems (Lyon, France), June 2007, pp. 61-64.
  13. E. Sano and K. Inafune, “Recent progress in devices and circuit technologies for millimeter-wave applications (invited),” 2007 Int’l Conf. Indium Phosphide and Related Materials (Matsue, Japan), May 2007, pp. 523-526.
  14. Y. M. Meziani, M. Hanabe, A. Koizumi, T. Otsuji and E. Sano, " Self oscillation of the plasma waves in a dual grating gates HEMT device,” 2007 Int’l Conf. Indium Phosphide and Related Materials (Matsue, Japan), May 2007, pp. 534-537.
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2006
  1. D. Ueo, H. Osabe, K. Inafune, M. Ikebe, E.. Sano, M. Koutani, M. Ikeda, and K. Mashiko, “7-GHz inverted-F antenna monolithically integrated with CMOS LNA,” 2006 Intl. Symposium on Intelligent Signal Processing and Communication Systems (Yonago, Japan), Dec. 2006, pp. 259-262.
  2. E. Sano and T. Otsuji, “HEMT-based nanometer devices toward tera-hertz era (invited),” Int'l Workshop “Tera- and Nano-Devices: Physics and Modeling” (Aizu-Wakamatsu, Japan), Oct. 2006, pp. 48-49.
  3. Y. M. Meziani, M. Hanabe, T. Otsuji and E. Sano, “Threshold behavior of photoresponse of plasma waves by new phomixer devices,” Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, (Yokohama, Japan), Sept. 2006, pp. 894-895.
  4. M. Hanabe, T. Otsuji, Y. M. Meziani, E. Sano and T. Asano, “Terahertz emission of radiation produced by photoexcited instability of two-dimensional plasmons in an InGaP/InGaAs/GaAs heterostructure transistor,” Dig. the 2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, ,(Sendai, Japan), July 2006, pp. 291-295.
  5. M. Hanabe, T. Otsuji, Y. M. Meziani, and E. Sano, “Possibility of Injection-Locked Emission of Terahertz Radiation from InGaP/InGaAs/GaAs Grating-Bicoupled Plasmon-Resonant Photomixer,” The Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics（IRMMW－THz2006） (Shanghai, China), Sept. 2006,
  6. Y. M. Meziani, T. Otsuji, M. Hanabe, T. Ishibashi, T. Ueno, and E. Sano, “Emission of terahertz radiation from new grating-bicoupled HEMT device,” 14th International Symposium "Nanostructures: Physics and Technology" (St Petersburg, Russia), June 2006, pp. 336-337.
  7. T. Otsuji, M. Hanabe, Y. M. Meziani, and E. Sano, “Terahertz emission of radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant photomixer,” 64th Device Research Conf. (University Park, PA), June 2006, pp. 193-194.
  8. T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, “A Grating-bicoupled Plasmon-resonant Terahertz Emitter Fabricated with GaAs-based Heterostructure Metamaterial Systems,” 2006 Photonic Metamaterials (Grand Bahama Island, The Bahamas), June 2006, WD29.
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2005
  1. T. Otsuji, M. Hanabe, T. Nishimura, N. Imamura, E. Sano and V. Ryzhii, “Widely-tunable terahertz plasmon-resonant photomixer based on heterostructure integrated microelectronics,” Abstracts of the ISSSP 35th Workshop on Physics and Technology of THz Photonics ( Erice, Italy, July 2005) p. 5.
  2. M. Hanabe, T. Nishimura, T. Otsuji, and E. Sano, “Highly frequency-tunable terahertz plasmon-resonant photomixer with super-grating gate structure,” Abstracts of the Joint 30th International Conference on Infrared and Millimeter Waves & 13th International Conference on Terahertz Electronics (Williamsburg, VA, Sept. 2005) pp. 638-639.
  3. T. Nishimura, M. Hanabe, M. Miyamoto, T. Otsuji, and E. Sano, “Terahertz frequency multiplier operation of 2-D plasmon-resonant photomixer,” 6th Topical Workshop on Heterostructure Microelectronics (Awaji Island, Japan, Aug. 2005) pp. 58-59.
  4. M. Hanabe, T. Nishimura, M. Miyamoto, T. Otsuji, and E. Sano, “Structure-sensitive design for wider tunable operation of terahertz plasmon-resonant photomixer,” 6th Topical Workshop on Heterostructure Microelectronics (Awaji Island, Japan, Aug. 2005) pp. 52-53.
  5. K. Inafune, E. Sano , H. Matsuzaki , T. Kosugi, and T. Enoki, “W-band active integrated antenna oscillator based on full-wave design methodology and 0.1-mm gate InP-based HEMT technology,” 6th Topical Workshop on Heterostructure Microelectronics (Awaji Island, Japan, Aug. 2005) pp. 24-25.
  6. K. Inafune and E. Sano, “Multiband artificial magnetic conductors using stacked microstrip patch layers,” 2005 IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (Beijing, China, Aug. 2005) pp. 590-593.
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2004
  1. T. Otsuji, M. Hanabe, J. Shigenobu, S. Takahashi, and E. Sano,“A novel terahertz plasma-wave photomixer with resonant-cavity enhanced structure,” 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics (Karlsruhe, Germany) 2004, pp. 331-332.
  2. E. Sano, “Challenges for terahertz integrated circuits,” 2004 RCIQE International Seminar for 21st Century COE Program: “Quantum Nanoelectronics for Meme-Media-Based Information Technologies (II)”, Sapporo, Japan, Feb. 2004, pp.95-100.
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2003
  1. H. Nosaka, E. Sano, K. Ishii, M. Ida, K. Kurishima, S. Yamahata, and T. Shibata, “A 39-to-45-Gbit/s multi-data-rate clock and data recovery circuit with a robust lock detector,” VLSI Circuits Symp. Dig. (Kyoto), 2003, pp. 61-63.
  2. K. Ishii, H. Nosaka, M. Ida, K. Kurishima, S. Yamahata, T. Enoki, T. Shibata, and E. Sano, “4-bit multiplexer/demultiplxer chip set for 40-Gbit/s optical communication systems,” Radio Frequency Integrated Circuits Symposium (Philadelphia, PA), 2003 , pp. 63-69.
  3. M. Akazawa, T. Tanaka, K. Inafune, and E. Sano; "Electromagnetic Field Simulation of 2-Dimensional Polygon-Array Photonic Crystals," 2003 RCIQE International Seminar on "Quantum Nanoelectronics for Meme-Media-Based Information Technologies,"(Sapporo, Japan, February 12-14, 2003).
  4. M. Akazawa; "Possibility of Adiabatic Switching of Single-Electron-Devices," 2003 RCIQE International Seminar on "Quantum Nanoelectronics for Meme-Media-Based Information Technologies,"(Sapporo, Japan, February 12-14, 2003).
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2002
  1. H. Nosaka, E. Sano, K. Ishii, M. Ida, K. Kurishima, T. Enoki, and T. Shibata; "A fully integrated 40-Gbit/s clock and data recovery circuit using InP/InGaAs HBTs," IEEE MTT-S Dig. (Seattle, WA), pp. 83-86 (2002).
  2. S. Tsunashima, H. Nakajima, E. Sano, M. Ida, K. Kirishima, N. Watanabe, T. Enoki, and H. Sugahara; "90GHz operation of novel dynamic frequency divider using InP/InGaAs HBTs," IPRM'02 (Stockholm, Sweden), pp. 43-46 (2002).
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2001
  1. K. Murata, T. Enoki, Y. Yamane, and E. Sano; "High speed optical fiber communication ICs based on InP HEMT (invited)," IPRM'01 (Nara, Japan), pp. 610-613 (2001).
  2. K. Sano, K. Murata, T. Akeyoshi, H. Kitabayashi, and E. Sano;"Monolithic digital optoelectronic ICs towards 100 Gbit/s (invited)," Topical Meet. Ultrafast Electron. Optoelectron. (Lake Tahoe, NV), pp. 21-24 (2001).
  3. H. Sugahara, S. Kimura, K. Murata, and E. Sano, "Over 40 Gb/s IC module technology using 8-mm-square leadless chip carrier packages mounted on 4-layer resin printed circuit boards," IEEE GaAs IC Symp. Dig. (Baltimore, MD), pp. 255-258 (2001).
  4. K. Ishii, H. Nosaka, H. Nakajima, K. Kurishima, M. Ida, N. Watanabe, Y. Yamane, E. Sano, and T. Enoki, "1-W 1:16 DEMUX and o ne-chip CDR with 1:4 DEMUX for 10 Gbit/s optical communication systems," IEEE GaAs IC Symp. Dig. (Baltimore, MD), pp. 101-104 (2001).
  5. K. Kurishima, M. Ida, N. Watanabe, H. Nakajima, Y. Yamane, and E. Sano,"DC characteristics of InP HBTs under high-temperature and bias stress," SSDM2001 (Tokyo, Japan), pp. 336 -337 (2001).
  6. K. Murata, K. Sano, E. Sano, S. Sugitani, and T. Enoki, "A fully monolithic integrated 43-Gbit/s clock and data recovery circuit using InAlAs/In GaAs/InP HEMTs," SSDM2001 (Tokyo, Japan), pp. 370 -371 (2001).
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著書
  1. 佐野栄一；“グラフェントランジスタの論理回路応用”, 尾辻泰一監修, “グラフェンの最先端技術と拡がる応用”, pp. 144-153, フロンティア出版, 東京, 2012年7月.
  2. 佐野栄一；“RF回路と論理回路への適用,” “グラフェンが拓く材料の新領域”, pp. 156-165, NTS, 東京, 2012年6月.
  3. 佐野栄一；“能動受動融合メタマテリアルによるミリ波機能回路,”石原照也監修,“メタマテリアル -最新技術と応用-“, pp. 274-283, シーエムシー出版, 東京, 2007年11月.
  4. 佐野栄一；"時分割多重分離用電子回路の動作原理," 河内正夫監修, "超高速ネットワーク技術," 2000, 電気通信協会, pp. 118-122.
  5. 佐野栄一；"バイポーラおよび化合物半導体デバイス," 桜井貴康編, "低消費電力、高速LSI技術," 1998, リアライズ社, pp. 485-498.
  6. K. Ogawa, L. D. Tzeng, Y. K. Park, and E. Sano;"Advances in high bit-rate transmission systems," in Optical fiber telecommunications III, 1997, San Diego: Academic Press, pp. 336-372.
  7. 佐野栄一；"光通信用高速集積回路," 阿部浩之, 三村高志, 茅根直樹編, "光・マイクロ波半導体応用技術," 1996, サイエンスフォーラム, pp.317-326.

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