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2009 RCIQE International Seminar on
"Advanced Semiconductor Materials and Devices"
March 2-3, 2009
Conference Hall, Hokkaido University
Co-Sponsored by
Research Center for Integrated Quantum Electronics (RCIQE)
and
Global COE Program of
Center for Next-Generation Information Technology based on
Knowledge Discovery and Knowledge Federation,
Hokkaido University
Program (download PDF version)
Monday, March 2
| 10:00 - 10:10 |
"Opening Address" |
| - Semiconductor Nanowires - |
| 10:10 - 10:50 |
"Vapor-liquid-solid growth of III-V nanowires: Mechanisms, difficulties, challenges" |
|
J.-C. Harmand, F. Glas, G. Patriarche, L. Largeau, M. Tchernycheva, C. Sartel and L. Liu,
CNRS-LPN, France |
| 10:50 - 11:30 |
"Heterostructured wurtzite/zinc-blende GaAs/GaAsSb nanowires: New possibilities for band-structure engineering in nanowire based photonic devices" |
|
H. Weman, Norwegian University of Science and Technology, Norway |
| 11:30 - 11:50 |
"III-V semiconductor nanowires and their device application" |
|
T. Fukui, Hokkaido University |
| 11:50 - 13:20 |
Lunch Break |
| - Spintronics - |
| 13:20 - 14:00 |
"Characterization of spintronic materials - Are ferromagnetic clusters in semiconductors useful for spintronics?" |
|
P. J. Klar, Justus-Liebig-University of Giessen, Germany |
| 14:00 - 14:20 |
"Ferromagnetic MnAs nanoclusters position- controlled by selective-area MOVPE toward magneto-resistive device applications" |
|
S. Hara, Hokkaido University and JST-PRESTO |
| 14:20 - 14:40 |
Coffee Break |
|
- Graphen -
|
| 14:40 - 15:20 |
"Novel microscopies for graphene on SiC" |
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M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi, NTT Basic Research Labs.
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| 15:20 - 15:40 |
"Theoretical investigation of graphene-channel field-effect transistors" |
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E. Sano, Hokkaido University |
| 15:40 - 16:00 |
"Fabrication and characterization of graphene transistor on SiC" |
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K. Yoh and K. Konishi, Hokkaido University |
| 16:00 - 17:30 |
Poster Viewing Session |
|
Lab Tour to RCIQE (17:00 - 18:00) |
| 18:00 - 19:30 |
Reception (Centennial Hall, Hokkaido Univ.) |
| - Advanced Device Technology - |
| 10:00 - 10:40 |
"InGaAs MISFET with hetero-laucher" |
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Y. Miyamoto, Tokyo Institute of Technology
|
| 10:40 - 11:20 |
"Cooperation of R&D's on compound semiconductor materials with advanced electron devices in NTT laboratories" |
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N. Shigekawa, M. Hiroki and H. Sugiyama, NTT Photonics Labs. |
| 11:20 - 11:40 |
"Electrochemical formation and sensor application of InP porous nanostructures" |
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T. Sato, Hokkaido University |
| 11:40 - 13:10 |
Lunch Break |
| - Nanoelectronic Materials and Devices - |
| 13:10 - 13:50 |
"Novel-functional single-electron device using nanodot array with multiple outputs" |
|
Y. Takahashi1, T. Kaizawa1, M. Arita1, A. Fujiwara2, Y. Ono2 and H. Inokawa3,
1Hokkaido University, 2NTT Basic Research Labs., 3Shizuoka University
|
| 13:50 - 14:30 |
"Siliconphotonics and plasmonics for on-chip interconnection" |
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K. Ohashi, NEC and MIRAI-Selete |
| 14:30 - 14:50 |
"Semiconductor surfaces and growth of nanowires: A first-principles study" |
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H. Koga, Hokkaido University |
| 14:50 - 15:00 |
"Closing Remarks" |
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