学会誌論文等：16件

(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1501) Yafei Ou, Prasoon Ambalathankandy, Shinya Takamaeda, Masato Motomura, Tetsuya Asai, and Masayuki Ikebe: " Real-time tone mapping: a survey and crossimplementation hardware benchmark ", published on-line in IEEE Transactions on Circuits and Systems for Video Technology, 21 pages (2021). DOI: 10.1109/TCSVT.2021.3060143

2.(1502) S. Mizuno, R. Lu, K. Shimizu, Y. Ueba, M. Ishikawa, M. Kitamura, M. Hoga and S. Kasai: " Fabrication and characterization of a nano-convex-embedded Si MOSFET for nano-scale electrical discrimination", Jpn. J. Appl. Phys., Vol. 60, pp. SCCE10-1-6 (2021).

3.(1503) Prasoon Ambalathankandy, Yafei Ou, and Masayuki Ikebe:"Warm-cool color-based high-speed decolorization: an empirical approach for tone mapping applications ", Journal of Electronic Imaging, Vol. 30, No. 4, pp. 043026-1-16 (2021).

4.(1504) Katsuhiro Tomioka and Junichi Motohisa:"Scaling effect on vertical gate-all-around FETs using III-V NW-channels on Si ", IEEE SNW 2021 Tech. Dig., pp. 51-52 (2021).

5.(1505) Katsuhiro Tomioka: "A logical switch to the vertical direction ", Compound Semiconductor,
Vol. 5, pp. 40-45 (2021).

6.(1506) M. Toguchi, K. Miwa, F. Horikiri, N. Fukuhara, Y. Narita, O. Ichikawa, R. Isono, T. Tanaka, and T. Sato:"Self-terminating contactless photoelectrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) ", J. Appl. Phys., Vol. 130, pp. 024501-1-10 (2021). 208

7.(1507) M. Akazawa and Y. Kitawaki:"Formation of thermally grown SiO2/GaN interface", AIP Advances, Vol. 11, pp. 085020-1-5 (2021).

8.(1508) Haruna Shiomi, Akira Ueda, Tetsuya Tohei, Yasuhiko Imai, Takeaki Hamachi, Kazushi Sumitani, Shigeru Kimura, Yuji Ando, Tamotsu Hashizume, and Akira Sakai: " Analysis of inverse-piezoelectric-effect-induced lattice deformation in Al-GaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffraction", Appl. Phys. Express, Vol. 14, pp. 095502-1-6 (2021).

9.(1509) Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, and Yasuo Koide: " Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition ", J. Vac. Sci. Technol. A, Vol. 39, pp. 062405 -1-7 (2021).

10.(1510) M. Shimauchi, K. Miwa, M. Toguchi, T. Sato, and J. Motohisa: " Fabrication of GaN nanowires containing n+-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment", Appl. Phys. Exp., Vol. 14, No. 11, pp. 111003-1-4 (2021).

11.(1511) Pitchayapatchaya Srikram, Masayuki Ikebe, and Masato Motomura: " Linearity Improvement of VCO-Based ADC via Complementary Bias Voltage Control for IoT Devices ", Journal of Signal Processing, Vol. 26, No. 1, pp. 1-12 (2022).

12.(1512) Akinobu Yoshida, Hironori Gamo, Junichi Motohisa, and Katsuhiro Tomioka: "
Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium ", Scientific Reports, Vol. 12, pp. 1606-1-8 (2022).

13.(1513) Masayuki Ikebe, Prasoon Ambalathankandy, and Yafei Ou:" (Invited Paper) HDR Tone mapping: System Implementations and Benchmarking", The ITE Transactions on Media Technology and Applications, Vol. 10, No. 2, pp. 27-51 (2022).

14.(1514) M. Akazawa, S. Murai, and T. Kachi:"Encapsulant Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN ", J. Electron. Mater. Vol. 51, pp. 1731-1739 (2022).

15.(1515) 斉藤健太, 青野真士, 葛西誠也:「（招待論文）抵抗クロスバー回路を備えた粘菌型アナログ電子解探索システムにおける最大カット問題解法」, 電子情報通信学会論文誌C, Vol. J105-C, No. 3, pp.1-8 (2022).

16.(1516) Keigo Teramoto, Ryoma Horiguchi, Wei Dai, Yusuke Adachi, Masashi Akabori, and Shinjiro Hara: " Tailoring Magnetic Domains and Magnetization Switching in CoFe Nanolayer Patterns with Their Thickness and Aspect Ratio on GaAs (001) Substrate ", Phys. Status Solidi B, Vol. 259, No. 4, pp. 2100519-1-9 (2022).