研究内容・成果 - 研究業績

学会誌論文

学会誌論文等:23件

(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1478) K. Isobe and M. Akazawa: " Effects of Surface Treatment on Fermi Level Pinning at Metal/GaN Interfaces Formed on Homoepitaxial GaN Layers, " Jpn. J. Appl. Phys. Vol. 59, pp. 046506-1-8 (2020).

2.(1479) R. Ochi, E. Maeda, T. Nabatame, K. Shiozaki, T. Sato, and T. Hashizume: " Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor,"AIP Advances 10, pp. 065215-1-5 (2020).

3.(1480) Patrick Uredat, Matthias T. Elm, Ryoma Horiguchi, Peter J. Klar, and Shinjiro Hara: " The Transport Properties of InAs Nanowires: An Introduction to MnAs/InAs Heterojunction Nanowires for Spintronics (Invited Topical Review Paper),"J. Phys. D: Appl. Phys., Vol. 53, No. 33, pp. 333002-1-22 (2020).

4.(1481) Tomoya Akamatsu, Katsuhiro Tomioka, and Junichi Motohisa: " Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs,"Nanotechnology, Vol. 31, No. 39, pp. 394003-1-7 (2020).

5.(1482) H. Gamo, and K. Tomioka: " Integration of Indium Arsenide/Indium Phosphide Core-Shell Nanowire Vertical Gate-All-Around Field-Effect Transistors on Si,"IEEE Elec. Dev. Lett., Vol. 41(8), pp. 1169-1172 (2020).

6.(1483) Katsuhiro Tomioka, Junichi Motohisa, and Takashi Fukui: " Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes, "Scientific Reports, Vol. 10, pp. 10720-1-9 (2020).

7.(1484) Katsuhiro Tomioka, Fumiya Ishizaka, Junichi Motohisa, and Takashi Fukui: "InGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistor, "Appl. Phys. Lett., Vol. 117, pp. 123501-1-5 (2020).

8.(1485) M. Akazawa and R. Kamoshida: " Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing, " Jpn. J. Appl. Phys. Vol. 59, pp. 096502-1-6 (2020).

9.(1486) Prasoon Ambalathankandy, Masayuki Ikebe, Takayuki Yoshida, Takeshi Shimada, Shinya Takamaeda, Masato Motomura, and Tetsuya Asai: " An Adaptive Global and Local Tone Mapping Algorithm Implemented on FPGA, "IEEE Transactions on Circuits and Systems for Video Technology, Vol. 30, No. 9, pp. 3015-3028 (2020).

10.(1487) S. Yamada, K. Takeda, M. Toguchi, H. Sakurai, T. Nakamura, J. Suda, T. Kachi, and T. Sato: " Depth profiling of surface damage in n-type GaN induced by inductively coupled plasma reactive ion etching using photo-electrochemical techniques, " Applied Physics Express Vol. 13, pp. 106505-1-5 (2020).

11.(1488) K. Sasaki, S. Saito, and S. Kasai:" Current timer switch in a GaAs-based nanowire coupled with polyoxometalate nanoparticle and conductive AFM tip,"Jpn. J. Appl. Phys. Vol. 59, pp.105005-1-7 (2020).

12.(1489) K. Saito, M. Aono, and S. Kasai: " Amoeba-inspired analog electronic computing system integrating resistance crossbar for solving the travelling salesman problem, " Scientific Reports Vol.10, pp. 20772-1-9 (2020).

13.(1490) K. Saito and S. Kasai: " Effect of feedback delays on solution quality in amoebainspired computing system that solves traveling salesman problem, " Appl. Phys. Express Vol. 13, pp.114501-1-5 (2020).

14.(1491) Ryoma Horiguchi, Shinjiro Hara, Kozaburo Suzuki, and Masaya Iida: " Magnetization Switching Depending on Magnetic Fields Applied to Ferromagnetic MnAs Nanodisks Selectively-Grown on Si (111) Substrates, "AIP Adv., Vol. 10, No. 12, pp. 125003-1-7 (2020).

15.(1492) Yoshiki Tai, Hironori Gamo, Junichi Motohisa, and Katsuhiro Tomioka:"Selectivearea growth of AlInAs nanowires, "ECS Transactions, Vol. 98, No. 6, pp. 149-153 (2020).

16.(1493) Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa, Takashi Fukui: " Vertical gate-all-around tunnel FET using InGaAs nanowire/Si with core-multishell structure, "IEEE IEDM Tech. Dig., pp. 429-432 (2020).

17.(1494) S. Kaneki and T. Hashizume: " Interface characterization of Al2O3/m-plane GaN structure, "AIP Advances Vol.11, pp. 015301-1-7 (2021).

18.(1495) K. Aoshima, M. Horita, J. Suda, and T. Hashizume: " Impact of gamma-ray irradiation on capacitance-voltage characteristics of Al2O3/GaN MOS diodes with and without post-metallization annealing,"Appl. Phys. Express Vol.14, pp. 015501-1-5 (2021).

19.(1496) M. Akazawa, R. Kamoshida, S. Murai, T. Kachi, and A. Uedono:"Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam, "Jpn. J. Appl. Phys. Vol. 60, pp. 016502-1-8 (2021).

20.(1497) J. T. Asubar, Z. Yatabe, D. Gregusova, and T. Hashizume: " Controlling surface/ interface states in GaN-based transistors: Surface model, insulated gate and surface passivation (Invited Tutorial), " J. Appl. Phys. Vol. 129, pp.121102-1-28 (2021).

21.(1498) K. Saito, N. Suefuji, and S. Kasai: " Effect of asymmetric deformation dynamics in amoeboid organism on its search ability, "Bioinspiration & Biomimetics Vol. 16 pp. 036003-1-8 (2021).

22.(1499) M. Akazawa, E. Wu, H. Sakurai, M. Bockowski, T. Narita, and T. Kachi: " Xray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN, " Jpn. J. Appl. Phys. Vol. 60, pp. 036503-1-8 (2021).

23.(1500) Aimi Taguchi, Shun Shishido, Yafei Ou, Masayuki Ikebe, Tianyu Zeng, Wanxuan Fang, Koichi Murakami, Toshikazu Ueda, Nobutoshi Yasojima, Keitaro Sato, Kenichi Tamura, Kenneth Sutherland, Nozomi Oki, Ko Chiba, Kazuyuki Minowa, Masataka Uetani, and Tamotsu Kamishima: " Quantification of Joint Space Width Difference on Radiography Via Phase-Only Correlation (POC) Analysis: a Phantom Study Comparing with Various Tomographical Modalities Using Conventional Margin-Contouring, "Journal of Digital Imaging Vol. 34, pp. 96-104 (2021).

  • ワークショップ&セミナー
  • 配属希望の学生のみなさんへ
  • 教員・研究員の公募

Page Top