学会誌論文
学会誌論文等：24件
(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)
1.(1454) 冨岡克広:「III-V 族化合物半導体ナノワイヤトランジスタ集積技術（解説記事）」応用物理第88 巻4 号、pp. 245 - 251 (2019).
2.(1455) K. Tomioka, H. Gamo, J. Motohisa: " Vertical Tunnel FET Technologies using
III-V/Si heterojunciton, "ECS Trans., Vol. 92, pp. 71-78 (2019).
3.(1456) K. Fukuda, H. Asai, J. Hattori, M. Shimizu, and T. Hashizume:"A time-dependent Verilog-A compact model for MOS capacitors with interface traps, "Jpn. J. Appl. Phys. Vol. 58, SBBD06-1-6 (2019).
4.(1457) D. Greguov, L. Tth, O. Pohorelec, S. Hasenhrl, . Hak, I. Cora, Z. Fogarassy, R. Stoklas, A. Seifertov, M. Blaho, A. Laurenkov, T. Oyobiki, B. Pcz, T. Hashizume,andJ.Kuzmk:"InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region,"Jpn. J. Appl. Phys. Vol. 58, SCCD21-1-5 (2019).
5.(1458) Keisuke Uemura, Manato Deki, Yoshio Honda, Hiroshi Amano, and Taketomo Sato:" Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors,"Japanese Journal of Applied Physics, Vol. 58(SC), pp. SCCD20-1-6, (2019).
6.(1459) M. Akazawa and K. Uetake: " Impact of Low-Temperature Annealing on Defect Levels Generated by Mg-Ion-Implanted GaN, " Jpn. J. Appl. Phys. Vol. 58, pp. SCCB10-1-6 (2019).
7.(1460) K. Sasaki, S. Okamoto, S. Tashiro, T. Asai, and S. Kasai:"Formation and characterization of charge coupled structure of polyoxometalate particles and a GaAs-based nanowire for readout of molecular charge states, "Jpn. J. Appl. Phys. Vol. 58, pp. SDDE13-1-6 (2019).
8.(1461) Taketomo Sato, Masachika Toguchi, Yuto Komatsu, and Keisuke Uemura: " Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions," IEEE Transactions on Semiconductor Manufacturing, Vol. 32, pp. 483-488 (2019).
9.(1462) Fumimasa Horikiri, Noboru Fukuhara, Hiroshi Ohta, Naomi Asai, Yoshinobu Narita, Takehiro Yoshida, Tomoyoshi Mishima, Masachika Toguchi, Kazuki Miwa, and Taketomo Sato: " Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices,"IEEE Transactions on Semiconductor Manufacturing, Vol. 32, pp. 489-495 (2019).
10.(1463) Masachika Toguchi, Kazuki Miwa, Taketomo Sato: " Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect, "Journal of The Electrochemical Society, Vol. 166, pp. H510-H512 (2019).
11.(1464) M. Akazawa and S. Kitajima: " Control of Plasma-CVD SiO2/InAlN Interface by Ultrathin Atomic-Layer-Deposited Al2O3 Interlayer, "Jpn. J. Appl. Phys. Vol. 58,
pp. SIIB06-1-8 (2019).
12.(1465) Masachika Toguchi, Kazuki Miwa, Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Takehiro Yoshida, and Taketomo Sato: " Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O8 2− ions, "Applied Physics Express Vol. 12, 66504-1-4 (2019).
13.(1466) M. Akazawa, S. Kitajima, and Y. Kitawaki: " Control of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation, "Jpn. J. Appl. Phys. Vol. 58, pp. 106504-1-7 (2019).
14.(1467) Shinjiro Hara, Matthias T. Elm, and Peter J. Klar: " Selective-Area Growth and Transport Properties of MnAs/InAs Heterojunction Nanowires (Invited Paper),"J.
Mater. Res. Vol. 34, No. 23, pp. 3863-3876 (2019).
15.(1468) X. Zeng, D. Zhang, Y. Zhu, M. Chen, H. Chen, S. Kasai, H. Meng, and O. Goto: "Insight into in-plane isotropic transport in anthracene-based organic semiconductors,"J. Mat. Chem. C, pp.14275-14283 (2019).
16.(1469) K. Ando, K. Ueyoshi, Y. Oba, K. Hirose, R. Uematsu, T. Kudo, M. Ikebe, T. Asai, S. Takamaeda-Yamazaki, and M. Motomura: " Dither NN: hardware/algorithm codesign for accurate quantized neural networks,"IEICE Transactions on Information and Systems, Vol. E102, pp. 2341-2353 (2019).
17.(1470) K. Yamamoto, M. Ikebe, T. Asai, M. Motomura, and S. Takamaeda-Yamazaki:" FPGA-based annealing processor with time-division multiplexing, "IEICE Transactions on Information and Systems, Vol. E102-D, No. 12, pp. 2295-2305 (2019).
18.(1471) T. Kaneko, K. Orimo, I. Hida, S. Takamaeda-Yamazaki, M. Ikebe, M. Motomura, and T. Asai: " A study on a low power optimization algorithm for an edge-AI
Device, " Nonlinear Theory and Its Applications, Vol. E10-N, No. 4, pp. 373-389 (2019).
19.(1472) S. Yamada, M. Omori, H. Sakurai, Y. Osada, R. Kamimura, T. Hashizume, J. Suda, and T. Kachi: " Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching, " Appl. Phys. Express Vol. 13, pp. 016505-1-5 (2020).
20.(1473) S. Ozaki, K. Makiyama, T. Ohki, N. Okamoto, Y. Kumazaki, J. Kotani, S. Kaneki, K. Nishiguchi, N. Nakamura, N. Hara, and T. Hashizume: " Improved DC performance and current stability of ultrathin-Al2O3/InAlN/GaN MOS-HEMTs with post-metallization-annealing process,"Semicond. Sci. Technol. Vol. 35, 035027-1-7 (2020).
21.(1474) Patrick Uredat, Ryutaro Kodaira, Ryoma Horiguchi, Shinjiro Hara, Andreas Beyer,Kerstin Volz, Peter J. Klar, and Matthias T. Elm: " Anomalous Angle-Dependent
Magnetotransport Properties of Single InAs Nanowires, "Nano Lett., Vol. 20, No. 1, pp. 618-624 (2020).
22.(1475) M. Akazawa, R. Kamoshida, S. Murai, T. Narita, M. Omori, J. Suda, and T. Kachi:" Effects of dosage increase on electrical properties of MOS diodes with Mg-ion-implanted GaN before activation annealing, "Phys. Status Solidi B, Vol. 257, pp. 1900367-1-9 (2020).
23.(1476) K. Miwa, Y. Komatsu, M. Toguchi, F. Horikiri, N. Fukuhara, Y. Narita, O. Ichikawa, R. Isono, T. Tanaka, and T. Sato: " Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures, "Applied Physics Express, Vol. 13, pp. 026508-1-4 (2020).
24.(1477) F. Horikiri, N. Fukuhara, H. Ohta, N. Asai, Y. Narita, T. Yoshida, T. Mishima, M. Toguchi, K. Miwa, H. Ogami, and T. Sato: " Thermal-assisted contactless photo-electrochemical etching for GaN,"Applied Physics Express, Vol. 13, pp. 046501-1-5(2020).
