研究内容・成果 - 研究業績

国際会議

国際会議における講演:46件

(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1768) Y. Ou, P. Ambalathankandy, T. Shimada, T. Kamishima, and M. Ikebe:"Automatic Radiographic Quantification of Joint Space Narrowing Progression in Rheumatoid Arthritis Using POC, " 2019 IEEE 16th International Symposium on Biomedical Imaging (ISBI 2019), Venis, Italy, April 8-11 (2019).

2.(1769) S. Hara, M. T. Elm, and P. J. Klar: " Transport Properties of MnAs/InAs Heterojunction and InAs Nanowires Formed by Selective-Area Growth (Invited), " 2019 Material Research Society (MRS) Spring Meeting, Phoenix, Arizona, USA, April 22-26 (2019).

3.(1770) T. Sato, K. Uemura, and M. Toguchi: " Damage-less Wet Etching for Normallyoff AlGaN/GaN HEMTs using Photo-electrochemical Reactions (Invited), " 2019 International Conference on Compound Semiconductor Manufacturing Technology, Minneapolis, USA, April 29-May 2 (2019).

4.(1771) T. Hashizume:"MOS interface control for GaN power transistors (Invited),"Compound Semiconductor Week 2019 (CSW2019), Nara, Japan, May 19-23 (2019).

5.(1772) R. Kamoshida, K. Uetake, S. Murai, and M. Akazawa: " Investigation of Impact of Dosage on Electrical Properties of Mg-Ion-Implanted GaN before Activation Annealing Using MOS Structures,"Compound Semiconductor Week 2019 (CSW2019), Nara, Japan, May 19-23 (2019).

6.(1773) J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka: " Radiative and Nonradiative Tunneling in Nanowire Light-Emitting Diodes, "Compound Semiconductor Week 2019 (CSW2019), Nara, Japan, May 19-23 (2019).

7.(1774) H. Gamo, J. Motohisa, K. Tomioka: " Demonstration of InAs nanowire vertical transistors, "Compound Semiconductor Week 2019 (CSW2019), Nara, Japan, May 19-23 (2019).

8.(1775) K. Tomioka, A. Yoshida, H. Gamo:"Heteroepitaxial growth of InGaAs/InP/InAlAs/InP core-multishell nanowires on Si for a complementary tunnel FETs,"Compound Semiconductor Week 2019 (CSW2019), Nara, Japan, May 19-23 (2019).

9.(1776) R. Lu, K. Shimizu, X. Yin, Y. Ueba, M. Ishikawa, M. Kitamura, S. Kasai:"Formation and Characterization of 2D Random Si Nano-Pattern Using Resist Collapse for Nano-Artifact Metrics, "2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2019), Busan, Korea, July 1-3

(2020).

10.(1777) F. Horikiri, N. Fukuhara, H. Ohta, N. Asai, Y. Narita, T. Yoshida, T. Mishima, M. Toguchi, K. Miwa, and T. Sato: " GaN Wet Etching Process for Power and RF Devices (Invited), "2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2019), Busan, Korea, July 1-3 (2020).

11.(1778) T. Hashizume and T. Sato: " Interface control of Al2O3-based MOS structures for advanced GaN transistors (Invited),"The 13th International Conference on Nitride Semiconductors (ICNS-13), Bellevue, Washington, July 7-12 (2019).

12.(1779) S. Kaneki and T. Hashizume: " Stable C-V characteristics of Al2O3/m-plane GaN structures at high temperatures, " The 13th International Conference on Nitride

Semiconductors (ICNS-13), Bellevue, Washington, July 7-12 (2019).

13.(1780) M. Akazawa and R. Kamoshida: " Detection of Deep Level States Generated in GaN by Mg-Ion Implantation Using Conductance Method for MOS Diodes, " ), " The 13th International Conference on Nitride Semiconductors (ICNS-13), Bellevue, Washington, July 7-12 (2019).

14.(1781) X. Yin and S. Kasai: " Atomic Scale Gap in Ni-Graphene Interface and Its Effect on Contact Resistance, "The 21st International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON21), Nara, Japan, July 14-19 (2019).

15.(1782) F. Horikiri, N. Fukuhara, H. Ohta, N. Asai, Y. Narita, T. Yoshida, T. Mishima, M. Toguchi, K. Miwa, and T. Sato: " GaN Wet Etching Process (Invited), " 13th Topical Workshop on Heterostructure Microelectronics, Toyama, Japan, August 26-29, (2019).

16.(1783) K. Miwa, M. Toguchi, T. Sato: " Photo-electrochemical etching optimized for highdoped n-type GaN, "13th Topical Workshop on Heterostructure Microelectronics, Toyama, Japan, August 26-29, (2019).

17.(1784) K. Takeda, M. Toguchi, T. Sato: " Characterization of processing-damage induced on n-GaN surface utilizing electrochemical methods, " 13th Topical Workshop on Heterostructure Microelectronics, Toyama, Japan, August 26-29, (2019).

18.(1785) F. Horikiri, N. Fukuhara, H. Ohta, N. Asai, Y. Narita, T. Yoshida, T. Mishima, M. Toguchi, K. Miwa, and T. Sato: " GaN Wet Etching Process for Power and RF Devices (Invited), " 2019 International Conference on Solid State Devices and Materials, Nagoya, Japan, September 2-5 (2019).

19.(1786) K. Teramoto, R. Horiguchi, Y. Adachi, M. Akabori, and S. Hara: " Thickness and Aspect Ratio Dependences of Magnetic Domain Structures in Patterned CoFe Thin

Films on GaAs (001) Substrates, " 2019 International Conference on Solid State Devices and Materials, Nagoya, Japan, September 2-5 (2019).

20.(1787) R. Kamoshida, S. Murai, and M. Akazawa: " Effects of Deep Level States Generated by Mg-Ion Implantation on Electrical Properties of GaN MOS Diodes before

Activation Annealing, " 2019 International Conference on Solid State Devices and Materials, Nagoya, Japan, September 2-5 (2019).

21.(1788) P. Uredat, R. Horiguchi, R. Kodaira, S. Hara, P. J. Klar, and M. T. Elm:"Anomalous Angle-Dependent Magnetoresistance in InAs Nanowires,"NanowireWeek 2019, Pisa, Italy, Sep. 23-27 (2019).

22.(1789) T. Akamatsu, M. Sasaki, H. Kameda, K. Tomioka, J. Motohisa: " InP/InAsP/InP heterostructure nanowire LEDs for a single photon emitter, "Nanowire Week 2019, Pisa, Italy, Sep. 23-27 (2019). 23.(1790) Y. Katsumi, H. Gamo, J. Motohisa, K. Tomioka: " First demonstration of vertical surrounding-gate transistor using InP nanowires,"Nanowire Week 2019, Pisa, Italy, Sep. 23-27 (2019).

23.(1790) Y. Katsumi, H. Gamo, J. Motohisa, K. Tomioka:"First demonstration of vertical surrounding-gate transistor using InP nanowires,"Nanowire Week 2019, Pisa, Italy, Sep. 23-27 (2019).

24.(1791) K. Tomioka, J. Motohisa: " Selective-Area Epitaxy of III-V Nanowires on Si and Their Switching Applications (Invited) , "7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Semicon Nano 2019), Kobe, Japan, Sep. 24-27 (2019).

25.(1792) T. Hashizume:"Improved Al2O3 gate technology for high-power and high-frequency GaN transistors (Invited),"International Conference on Silicon Carbide and Related Materials (ICSCRM2019), Kyoto, Japan, Sep.29-Oct.4 (2019).

26.(1793) K. Tomioka, H. Gamo, J. Motohisa: " Vertical Tunnel FET Technologies Using III-V/Si Heterojunction (Invited), " The 236th ECS meeting, Atlanta, USA, Oct. 13-17 (2019).

27.(1794) M. Shimauchi, K. Miwa, M. Toguchi, T. Sato, J. Motohisa: " Fabrication of GaN Nanowires by Wet Etching Using Electrodeless Photo-Assisted Electrochemical Etching and Alkaline Solution Treatment, "The 32nd International Microprocesses and Nanotechnology Conference (MNC 2019), Hiroshima, Japan, Oct. 28-31 (2019).

28.(1795) H. Gamo, J. Motohisa, K.Tomioka: " InAs/InP Core-Shell Nanowire Channel for High-Mobility Vertical Surrounding-Gate Transistorstor, "The 32nd International Microprocesses and Nanotechnology Conference (MNC 2019), Hiroshima, Japan, Oct. 28-31 (2019).

29.(1796) K. Teramoto, R. Horiguchi, Y. Adachi, M. Akabori, and S. Hara: " Applied External Magnetic Field Dependence of Magnetic Domain Structures in Patterned CoFe Thin Films on GaAs (001) Substrates,"The 32nd International Microprocesses and Nanotechnology Conference (MNC 2019), Hiroshima, Japan, Oct. 28-31 (2019).

30.(1797) S. Saito, K. Sasaki, and S. Kasai:"Observation of Synchronized Charge Behavior in a Polyoxometalate Nanoparticle Using a GaAs-Based Nanowire Charge Detector, "The 32nd International Microprocesses and Nanotechnology Conference (MNC 2019), Hiroshima, Japan, Oct. 28-31 (2019).32nd International Microprocesses and Nanotechnology Conference (MNC 2019), Hiroshima, Japan, Oct. 28-31 (2019).

31.(1798) Y. Komatsu, M. Toguchi, and T. Sato: " Precise control in recessed-gate etching for AlGaN/GaN HEMTs by utilizing photo- electrochemical reactions, " The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), Okinawa, Japan, November 10-15 (2019).

32.(1799) F. Horikiri, N. Fukuhara, Y. Narita, T. Yoshida, M. Toguchi, K. Miwa, and T.

Sato: " Simple Photoelectrochemical Etching for GaN HEMT Application, " The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), Okinawa, Japan, November 10-15 (2019).

33.(1800) M. Toguchi, K. Miwa, F. Horikiri, N. Fukuhara, Y. Narita, T. Yoshida, and T. Sato: Evaluation of Radical Production Rate from S2O82− ions for GaN Etching, "The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), Okinawa, Japan, November 10-15 (2019).

34.(1801) M. Shimauchi, K. Miwa, M. Toguchi, T. Sato, J. Motohisa: " Fabrication of GaN nanowires by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment, "The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), Okinawa, Japan, November 10-15 (2019).

35.(1802) K. Isobe and M. Akazawa: " Effects of Surface Oxide Reduction Prior to Metallization on Electrical Properties of GaN-on-GaN Schottky Diodes,"The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), Okinawa, Japan, November 10-15 (2019).

36.(1803) Shunta Murai, Ryo Kamoshida, and M. Akazawa: " Effects of Long-Term Low-Temperature Annealing on Mg-Ion Implanted GaN, " The 9th Asia-Pacific Workshop on Widegap Semiconductors, Okinawa (APWS2019), Japan, November 10-15 (2019).

37.(1804) Y. Katsumi, H.Gamo, T.Akamatsu, J. Motohisa, K. Tomioka:"Vertical Surroundinggate Transistor Using InP Nanowires, " International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019), Atsugi, Japan, Nov. 18-22 (2019).

38.(1805) H. Gamo, T. Akamatsu, J. Motohisa, K. Tomioka: " Performance Analysis of InAs/InP Core-shell Nanowire Vertical Surrounding-gate Transistors,"International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019), Atsugi, Japan, Nov. 18-22 (2019).

39.(1806) R. Horiguchi, K. Teramoto, Y. Adachi, M. Akabori, and S. Hara:"Aspect Ratio Dependence of Magnetization Switching in CoFe Nanolayers Patterned on GaAs (001) Substrates, "8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII), Sendai, Japan, November 27-30 (2019).

40.(1807) P. Ambalathankandy, Y. Ou, J. Kochiyil, S. Takamaeda, M. Motomura, T. Asai, and M. Ikebe : " Radiography Contrast Enhancement: Smoothed LHE Filter a Practical Solution for Digital X-Rays with Mach Band, " 2019 International Conference on Digital Image Computing: Techniques and Applications (DICTA 2019), Perth, Australia, December 2-4 (2019).

41.(1808) Y. Komatsu, M. Toguchi, and T. Sato:"Precise Control in Threshold Voltage of AlGaN/GaN HEMTs by Photoelectrochemical Etching, "Materials Research Meeting 2019, Yokohama, Japan, December 10-14 (2019).

42.(1809) M. Toguchi, K. Miwa, F. Horikiri, N. Fukuhara, Y. Narita, T. Yoshida, and T. Sato: " Contactless Photoelectrochemical Etching of n-GaN in K2S2O8 solution, " Materials Research Meeting 2019, Yokohama, Japan, December 10-14 (2019).

43.(1810) F. Horikiri, N. Fukuhara, Y. Narita, T. Yoshida, M. Toguchi, K. Miwa, and T. Sato:"Simple Photoelectrochemical Etching of GaN for RF Application,"Materials Research Meeting 2019, Yokohama, Japan, December 10-14 (2019).

44.(1811) S. Kasai: " Amoeba-inspired electronic computer solving optimization problem, " International Symposium for Neuromorphic Hardware Research Center, Kitakyushu, Fukuoka, Japan, Dec. 11-12 (2019).

45.(1812) Junichi Motohisa and Katsuhiro Tomioka: " InP-based Nanowires Towards Ondemand Single Photon Emitters (Invited),"XXth InternationalWorkshop on Physics

of Semiconductor Devices (IWPSD 2019), Kolkata, India, December 17-20 (2019).

46.(1813) F. Horikiri, N. Fukuhara, M. Toguchi, and T. Sato: " GaN Wet Etching Process for HEMT Devices (Invited), "12th International symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, Nagoya, Japan, March 8-11 (2020).

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