国際会議における講演：45件

(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1658) Y. Yamamoto, N. Tamaki, A. Sonoda, and J. Motohisa: " Dependence on growth conditions in selective-area growth of GaN nanowires using RF-plasma-assisted molecular beam epitaxy, "Compound Semiconductor Week 2017, Berlin, Germany, May 14-18 (2017).

2.(1659) S. Hiramatsu, K. Wakita, S. Na, S. Yokoyama, M. Ikebe, and E. Sano: " CMOS terahertz imaging pixel with a small on-chip antenna, " 2017 International Image Sensor Workshop, Hiroshima, Japan, May 30-June 2 (2017).

3.(1660) S. Kasai:"Amoeba-inspired electronic computing system: Fluctuation and solution searching capability (invited), "Workshop on Molecular Architectonics - Toward Realization of Neuromorphic Computing by Nanomatrials, Toyonaka, Osaka, Japan, June 29-30 (2017).

4.(1661) K. Saitoh and S. Kasai: " Impact of External Fluctuation on Solution Search in Amoeba-inspired Electronic Computing System, "Workshop on Molecular Architectonics - Toward Realization of Neuromorphic Computing by Nanomatrials, Toyonaka, Osaka, Japan, June 29-30 (2017).

5.(1662) K. Inada, Y. Inden, and S. Kasai: " Development of Robust Surface Myoelectric Detection Technique Using a Nonlinear Device Network with Auto Parameter Tuning Mechanism,"2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2017), Gyeongju, Korea, July 3-5 (2017).

6.(1663) K. Shimizu, X. Yin, K. Sasaki, and S. Kasai: " Electrical Nanostructure Discrimination Technique for Nano-artifact Metrics, " 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2017), Gyeongju, Korea, July 3-5 (2017).

7.(1664) Kenya Nishiguchi, Syota Kaneki, and Tamotsu Hashizume: " Improved MOS gate control in Al2O3/AlGaN/GaN HEMTs with reverse-bias annealing, "12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 24 - 28 (2017).

8.(1665) Syota Kaneki, Zenji Yatabe, Kenya Nishiguchi, and Tamotsu Hashizume:" Threshold voltage shifts induced by acceptor-like interface states in Al2O3/AlGaN/GaN HEMTs, " 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 24 - 28 (2017).

9.(1666) Taketomo Sato, Keisuke Uemura, Yusuke Kumazaki, and Tamotsu Hashizume: " Precise thickness control in recess-etching for normally-off AlGaN/GaN HEMTs using a low damage photo-electrochemical reaction, "12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 24 - 28 (2017).

10.(1667) M. Akazawa and T. Hasezaki: " Modification of Fermi-level pinning at metal/GaN interface by inserting ultrathin Al2O3 interlayers, " 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 24 - 28 (2017).

11.(1668) N. Yokota, K. Uetake, and M. Akazawa: " Measurement of Electronic States Generated in GaN by Mg Ion Implantation, "29th International Conference on Defects in Semiconductors (ICDS 2017), Matsue, Shimane, Japan, July 31 - Aug. 4 (2017).

12.(1669) J. Motohisa, H. Kameda, M. Sasaki, S. Hara, and K. Tomioka:"Photoluminescence of Zn-Doped InP Nanowires: Mixing of Crystal Structures, Donor-Acceptor Pair Recombination, and Surface Effects, "29th International Conference on Defects in Semiconductors (ICDS 2017), Matsue, Shimane, Japan, July 31 - Aug. 4 (2017).

13.(1670) K. Tomioka, F. Ishizaka, and J. Motohisa:"Current enhancement of tunnel FET using modulation-doped nanowire-channels, "22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18), State College, USA, July 31 - August 4 (2017).

14.(1671) H. Kameda, K. Tomioka, F. Ishizaka, M. Sasaki, and J. Motohisa: " Improved characteristics of InP-based nanowire light-emitting diodes, " 22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18), State College, USA, July 31 - August 4 (2017).

15.(1672) Y. Minami, A. Yoshida, K. Tomioka, and J. Motohisa: " Selective-area growth of GaAs nanowires on Ge(111) substrates, " 22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18), State College, USA, July 31 - August 4 (2017).

16.(1673) X. Yin and S. Kasai:" Reduction of EB resist residues on graphene surface in terms of resist adhesion and solubility in developer solution, " 2th Topical Workshop on Heterostructure Microelectronics (TWHM2017), Kirishima, Japan, August 28-31 (2017).

17.(1674) D. Greguˇsov´a, M. Blaho, P. ˇSichman, ˇS. Haˇsˇc´ık, S. Hasen¨ohrl, R. Stoklas, A. Lauren ˇc´ıkov´a, K. Fr¨ohlich, L. T´oth, B. P´ecz, F. Brunner, J. Wurfl, T. Hashizume, and J. Kuzm´ık:" Threshold voltage controllability and stability in InGaN/AlGaN/GaN MOS HEMTs,"12th TopicalWorkshop on Heterostructure Microelectronics (TWHM-2017), Kirishima, Japan, August 28-31 (2017).

18.(1675) Keisuke Uemura, Yusuke Kumazaki, Taketomo Sato, and Tamotsu Hashizume: " Highly-controllable etching for AlGaN/GaN recessed-gate structures utilizing lowdamage electrochemical reactions, "12th Topical Workshop on Heterostructure Microelectronics (TWHM-2017), Kirishima, Japan, August 28-31 (2017).

19.(1676) Shota Kaneki, Zenji Yatabe, and Tamotsu Hashizume: "Correlation between VTH instability and interface states in Al2O3/AlGaN/GaN Structures, " 12th Topical Workshop on Heterostructure Microelectronics (TWHM-2017), Kirishima, Japan, August 28-31 (2017).

20.(1677) Kenya Nishiguchi, Shota Kaneki, and Tamotsu Hashizume: " Effects of bias annealing on current linearity of Al2O3/AlGaN/GaN MOS HEMTs, " 12th Topical Workshop on Heterostructure Microelectronics (TWHM-2017), Kirishima, Japan, August 28-31 (2017).

21.(1678) M. Matys, S.Kaneki, B. Adamowicz, J. Kuzm´ık, and T. Hashizume: " Analysis of temperature dependent frequency dispersion in C-V curves of Al2O3/AlGaN/GaN structures based on the disorder-induced gap-state model, "12th Topical Workshop on Heterostructure Microelectronics (TWHM-2017), Kirishima, Japan, August 28-31 (2017).

22.(1679) K. Uemura, Y. Kumazaki, T. Sato, and T. Hashizume:"Highly-controllable etching for AlGaN/GaN recessed-gate structures utilizing low-damage electrochemical reactions," 12th Topical Workshop on Heterostructure Microelectronics (TWHM-2017), Kirishima, Japan, August 28-31 (2017).

23.(1680) M. Sasaki, H. Kameda, K. Tomioka, and J. Motohisa: " Nanowire quantum dots emitting at telecom wavelength, "The 24th Congress of the International Commission for Optics (ICO-24), Tokyo, Japan, August 21 - 25 (2017).

24.(1681) K. Tomioka, J. Motohisa, and T. Fukui: " Vertical III-V nanowires on Si and transistor applications (Invited), "The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017), Kyoto, Japan, August 27 - September 1 (2017).

25.(1682) A. Yoshida, Y. Minami, K. Tomioka, and J. Motohisa: " Heterogeneous integration of vertical InGaAs nanowires on Ge (111) substrates by selective-area growth,"The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017), Kyoto,Japan, August 27 - September 1 (2017).

26.(1683) K. Chiba, K. Tomioka, A. Yoshida, and J. Motohisa: " Integration of InGaAs nanowires on Si(111) for optical devices, " The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017), Kyoto, Japan, August 27 - September 1 (2017).

27.(1684) K. Fukuda, J. Hattori, H. Asai, M. Shimizu, and T. Hashizume:"Simulation of GaN MOS capacitance with frequency dispersion and hysteresis, "International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, September 7-9 (2017).

28.(1685) Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu, and Tamotsu Hashizume: " Transient-mode simulation of MOS C-V characteristics for GaN, " 2017 International Conference on Solid-State Devices and Materials (SSDM2017), Sendai, Japan, September 26-29 (2017).

29.(1686) T. Kadowaki, R. Kodaira, and S. Hara: " Analysis of Bending Mechanism in MnAs/InAs Heterojunction Nanowires, " 2017 International Conference on Solid- State Devices and Materials (SSDM2017), Sendai, Japan, September 26-29 (2017).

30.(1687) M. Iida, R. Horiguchi, K. Morita, and S. Hara:"Magnetic Domain Characterizations of MnAs Nanoclusters on Si (111) Substrate, " 2017 International Conference on Solid-State Devices and Materials (SSDM2017), Sendai, Japan, September 26-29 (2017).

31.(1688) S. Matsumoto, M. Toguchi, and T. Sato: " Removal of reactive-ion-etching damage from n-GaN surface using a photoelectrochemical process,"2017 International Conference on Solid-State Devices and Materials (SSDM2017), Sendai, Japan, September 26-29 (2017).

32.(1689) Shinji Yamada, Hideki Sakurai, Masato Omori, Yamato Osada, Ryuichiro Kamimura, Tatsuya Oyobiki, Kenya Nishiguchi, Tamotsu Hashizume, and Tetsu Kachi: " Electrical Characteristics of GaN MOS Diodes with Dry Etched-Surface, " International Conference on Materials and Systems for Sustainability 2017 (ICMaSS2017), Nagoya, Japan, Sep. 29-Oct.1 (2017).

33.(1690) K. Tomioka and T. Fukui: " Transistor applications using vertical III-V nanowires on Si platform (Invited), "232nd ECS meeting, Washington DC, USA, October 1 - 5 (2017).

34.(1691) X. Yin and S. Kasai:" Impact of Small Amount of Ni Atoms on Contact Resistance in Metal-Graphene System,"30th International Microprocesses and Nanotechnology Conference (MNC2017), Jeju, Korea, November 6-9 (2017).

35.(1692) A. Yoshida, K. Chiba, Y. Minami, K. Tomioka, and J. Motohisa: " Composition control of InGaAs nanowires on Ge(111) substrates by selective-area growth, "30th International Microprocesses and Nanotechnology Conference (MNC2017), Jeju, Korea, November 6-9 (2017).

36.(1693) K. Chiba, A.Yoshida, K. Tomioka, and J. Motohisa: " Demonstration of InGaAs nanowire array photodiode on Si,"30th International Microprocesses and Nanotechnology Conference (MNC2017), Jeju, Korea, November 6-9 (2017).

37.(1694) R. Horiguchi, M. Iida, K. Morita, and S. Hara: " Size-Dependent Magnetic Domain Structure in MnAs Nanoclusters Selectively Grown on Si (111) Substrates Covered with Different Dielectric Mask Designs,"the 2017 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 26-December 1 (2017).

38.(1695) R. Kodaira, T. Kadowaki, and S. Hara: " Control of Bending Structures in MnAs/InAs Heterojunction Nanowires, " the 2017 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 26-December 1 (2017).

39.(1696) P. Uredat, M. T. Elm, R. Kodaira, R. Horiguchi, P. J. Klar, and S. Hara:"Electrical Ttransport Properties of Single MnAs/InAs Hybrid Nanowires Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy, " the 2017 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 26-December 1 (2017).

40.(1697) K. Tomioka, K. Chiba, A. Yoshida, and J. Motohisa: " Radial modulation-doped nanowire channel for millivolt switch, "the 2017 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 26-December 1 (2017).

41.(1698) K. Chiba, A. Yoshida, K. Tomioka, and J. Motohisa: " Vertical InGaAs nanowire photodiode array on Si, "the 2017 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 26-December 1 (2017).

42.(1699) M. Yoshioka and S. Hara: " Construction of In-House Papers/Figures Database System for a Paticular Research Domain using PDFs - Application of Nano-Crystal Device Development Domain -, "the 2nd International Workshop on Scientific Document Analysis (SCIDOCA 2017), Tokyo, Japan, November 14-15 (2017).

43.(1700) S. Nakazawa, H.-A. Shih, N. Tsurumi, Y. Anda, T. Hatsuda, T. Ueda, M. Nozaki, T. Yamada, T. Hosoi, T. Shimura, H. Watanabe, and T. Hashizume: " Fast Switching Performance by 20 A/730 V AlGaN/GaN MIS-HFET Using AlON Gate Insulator," 63rd. International Electron Devices Meeting (IEDM-2017), San Francisco, USA, December 2-6 (2017).

44.(1701) K. Sasaki, S. Okamoto, S. Tashiro, T. Asai, and S. Kasai: " Characterization of stochastic charge dynamics of polyoxometalate dispersed on a GaAs-based nanowire FET,"International Workshop on Molecular Architectonics 2018, Toyonaka, Osaka, Japan, March 2-3 (2018).

45.(1702) P. Uredat, R. Kodaira, R. Horiguchi, S. Hara, P. J. Klar, and M. T. Elm: " Magnetotransport Measurements of Single MnAs/InAs Hybrid Nanowire, " the 2018 German Physical Society (DPG) Spring Meeting (Berlin 2018), Berlin, Germany, March 11-16 (2018).