学会誌論文等：26件

 (カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1404) Katsuhiro Tomioka and Takashi Fukui: " (Invited) Transistor application using vertical III-V nanowires on Si platform, "ECS Trans., Vol. 80, pp. 43-52 (2017).

2.(1405) R. Stoklas, D. Greguˇsov´a, M. Blaho, K. Fr¨ohlich, J. Nov´ak, M. Matys, Z. Yatabe, P. Kordoˇs and T. Hashizume:" Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction, " Semicond. Sci. Technol., Vol. 32, pp.045018-1-8 (2017).

3.(1406) Shougo Yanase, Hirotake Sasakura, Shinjiro Hara, and Junichi Motohisa: " Single-Photon Emission from InAsP Quantum Dots Embedded in Density-Controlled InP Nanowires, "Jpn. J. Appl. Phys., Vol. 56, No. 4S, pp. 04CP04-1-6 (2017).

4.(1407) Y. Kumazaki, S. Matsumoto, T. Sato: " Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications, " J. The Electrochem. Soc., Vol. 164, pp.H477-H483 (2017).

5.(1408) Y. Kumazaki, K. Uemura, T. Sato, T. Hashizume: " Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process, "J. App. Phys., Vol. 121, pp.184501-1-6 (2017).

6.(1409) S. Okamoto, M. Sato, K. Sasaki, and S. Kasai: " Detection of charge dynamics of a tetraphenylporphyrin particle using GaAs-based nanowire enhanced by particlemetal tip capacitive coupling, "Jpn. J. Appl. Phys., Vol.56, pp.06GK02.1-6 (2017).

7.(1410) S. Ozaki, K. Makiyama, T. Ohki, N. Okamoto, S. Kaneki, K. Nishiguchi, N. Hara and T. Hashizume: " Effects of air annealing on DC characteristics of InAlN/GaN MOS high-electron-mobility transistors using atomic-layer-deposited Al2O3,"Appl. Phys. Express, Vo.10, pp.061001-1-4 (2017).

8.(1411) Ryoma Horiguchi, Hiroaki Kato, Kyohei Kabamoto, Ryutaro Kodaira, and Shinjiro Hara: " Analyses of Magnetization Switching and Magnetic Domains in Lateral MnAs Nanowires in Combination with Structural Characterization, "Jpn. J. Appl. Phys., Vol. 56, No. 6S1, 06GH05-1-6 (2017).

9.(1412) Ryutaro Kodaira, Kyohei Kabamoto, and Shinjiro Hara: " Shape Control of Ferromagnetic MnAs Nanoclusters Exhibiting Magnetization Switching in Vertical MnAs/InAs Heterojunction Nanowires, "Jpn. J. Appl. Phys., Vol. 56, No. 6S1, 06GH03-1-6 (2017).

10.(1413) E. Sano and M. Ikebe: " Equivalent circuit analysis of artificial dielectric layers, " Progress In Electromagnetics Research M, Vol. 60, pp. 85-92 (2017).

11.(1414) E. Sano and M. Ikebe: " High impedance properties of two dimensional composite right/left-handed transmission lines, " Progress In Electromagnetics Research C, Vol. 76, pp. 55-62 (2017).

12.(1415) H. Yamamoto, K. Agui, Y. Uchida, S. Mochizuki, T. Uruma, N. Satoh, and T. Hashizume: " Evaluation of carrier concentration reduction in GaN-on-GaN wafers by Raman spectroscopy and Kelvin force microscopy, "Jpn. J. Appl. Phys., Vol.56, pp.08LB07-1-5 (2017).

13.(1416) M. Akazawa and A. Seino: " Reduction of interface state density at SiO2/InAlN interface by inserting ultrathin Al2O3 and plasma oxide interlayers, "Phys. Status Solidi B, Vol. 254, No. 8, pp. 1600691-1-6 (2017).

14.(1417) A. Setiadi, H. Fujii, S. Kasai, K. Yamashita, T. Ogawa, T. Ikuta, Y. Kanai, K. Matsumoto, Y. Kuwahara, and M. Akai-Kasaya: " Room temperature discretecharge- fluctuation dynamics of a single molecule adsorbed on a carbon nanotube, " Nanoscale, Vol.30, pp.10674-10683 (2017).

15.(1418) 位田祐基，白田健人，葛西誠也: 「(招待論文) ジェスチャー型マン・マシンインターフェースに向けた確率共鳴現象を応用したロバスト表面筋電信号検出技術」電子情報通信学会和文誌C, Vol.J100-C, No.9, pp.369-376 (2017).

16.(1419) E. Sano, T. Watanuki, M. Ikebe, and B. Fugetsu: " Electrical characterization and microwave application of polyacrylonitrile/carbon nanotube-based carbon fibers, " Jpn. J. Appl. Phys., Vol. 56, pp. 095103-1-4 (2017).

17.(1420) K. Nishiguchi, S. Kaneki, S. Ozaki, and T. Hashizume:"Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors, " Jpn. J. Appl. Phys., Vol.56, pp.101001-1-8 (2017).

18.(1421) M. Matys, B. Adamowicz, S. Kaneki, K. Nishiguchi, and T. Hashizume: " Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors,"J. Appl. Phys., Vol.122, pp.224504-1-7 (2017).

19.(1422) Kohei Chiba, Katsuhiro Tomioka, Akinobu Yoshida, and Junichi Motohisa:" Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitched on Si platform, "AIP Advances, Vol. 7, pp.125304-1-5 (2017).

20.(1423) H. Ohta, S. W. Kim, S. Kaneki, A. Yamamoto, and T. Hashizume: " High thermoelectric power factor of high-mobility 2D electron gas, " Advanced Science, Vol.5, pp.1700696-1-6 (2018).

21.(1424) M. Chen, Y. Zhu, C. Yao, D. Zhang, Xi. Zeng, I. Murtaza, H. Chen, S. Kasai, H. Meng, and O. Goto: " Intrinsic charge carrier mobility in single-crystal OFET by "fast trapping vs. slow detrapping"model,"Organic Electronics, Vol.54, pp.237-244 (2018).

22.(1425) 佐野栄一: 「EMC 設計実現のためのCNT 分散複合材料」機能材料, Vol. 38, No. 2, pp. 59-65 (2018).

23.(1426) M. Akazawa, N. Yokota, and K. Uetake:"Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing," AIP Advances, Vol. 8, Issue 2, pp. 025310-1-7 (2018).

24.(1427) S. Kasai, A. Ichiki, and Y. Tadokoro:"Divergence of relative difference in Gaussian distribution function and stochastic resonance in a bistable system with frictionless state transition, "Appl. Phys. Express, Vol.11, pp.037301-1-4 (2018).

25.(1428) Z. Yatabe, S. Inoue, J. T. Asubar, and S. Kasai: " Analytical derivation of charge relaxation time distribution in a transistor from current noise spectrum using inverse integral transformation method,"Appl. Phys. Express, Vol.11, pp.031201.1-4 (2018).

26.(1429) 平松正太, 池辺将之, 佐野栄一: 「(招待論文) 2.4 GHz ウェイクアップ受信機の試作と評価」電子情報通信学会和文論文誌, Vol. J101-C, No.3, pp.147-155 (2018).