研究内容・成果 - 研究業績

国際会議

国際会議における講演:59件

(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1550) T. Hashizume and Z. Yatabe: " Characterization of surface/interface states for stability improvement of GaN-based HEMTs (invited), " 2015 Material Research Society Spring Meetings, San Francisco, California, USA, April 6-10 (2015).

2.(1551) MuYi Chen, Eiji Nakai, Katsuhiro Tomioka, and Takashi Fukui: " Free-Standing InP Nanowire Array and Their Optical Properties toward Resource Saving Solar Cells, "2015 Material Research Society Spring Meetings, San Francisco, California,USA, April 6-10 (2015).

3.(1552) Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, and Takashi Fukui: " Selective-Area Growth of Vertical InAs Nanowires on Ge(111), " 2015 Material Research Society Spring Meetings, San Francisco, California, USA, April 6-10 (2015).

4.(1553) K. Tomioka, J. Motohisa, and T. Fukui:" III-V nanowire channel on Si: From highperformance Vertical FET to steep-slope device (invited) ,"2015 International Symposium on VLSI Technology, Systems and Applications (2015 VLSI-TSA), Hsinchu,Taiwan, April 27-29 (2015).

5.(1554) M. Sato, X. Yin, R. Kuroda, S. Inoue, and S. Kasai: " Detection of Surface Charge Dynamics in a GaAs-based Nanowire by Local Surface Potential Control, "5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015), Niigata, Japan, June 16-19 (2015).

6.(1555) T. Fukui, F. Ishizaka, and K. Tomioka:"Vertically Aligned Semiconductor Nanowire Array and Their Applications (invited), " Compound Semiconductor Week 2015,Santa Barbara, California, USA, June 28-July 2 (2015).

7.(1556) R. Stoklas, J. Kuzmik, Z. Yatabe, and T. Hashizume: " Influence of the oxygenplasma treatment on the AlGaN/GaN NOSHFETs with HfO2 by ALD to reduce leakage current,"The 42nd International Symposium on Compound Semiconductors(ISCS2015), Santa Barbara, California, USA, June 28-July 2 (2015).

8.(1557) X. Yin, M. Sato, and S. Kasai: " Implementation of A Complete Set of Logic Gates Using A Graphene-based Three-branch Nano-junction Device,"The 42nd International Symposium on Compound Semiconductors (ISCS2015), Santa Barbara,California, USA, June 28-July 2 (2015).

9.(1558) Y. Hiraya, F. Ishizaka, K. Tomioka, and T. Fukui:"Growth of AlGaP and AlInP on GaN Substrates Toward Transferring Wurtzite Structure, "The 42nd International Symposium on Compound Semiconductors (ISCS2015), Santa Barbara, California,USA, June 28-July 2 (2015).

10.(1559) Z. Yatabe and T. Hashizume: " Characterization and control of insulated gate interfaces for normally-off AlGaN/GaN HEMT (invited), "The 42nd International Symposium on Compound Semiconductors (ISCS2015), Santa Barbara, California, USA, June 28-July 2 (2015).

11.(1560) T. Hashizume and Z. Yatabe: " Characterization and control of interface states for stable operation of GaN transistors (invited) , "23rd Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2015),Jeju, Korea, June 29-July 1 (2016).

12.(1561) R. Kuroda, M. Sato, and S. Kasai: " Development of digital wet etching technique for high-precision GaAs-based nanostructure formation, " 23rd Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD2015), Jeju, Korea, June 29-July 1 (2016).

13.(1562) K. Hiraishi, T. Kawauchi, and E. Sano: " Millimeter-wave metamaterial antenna in standard CMOS technology, " Progress In Electromagnetics Research Symposium(PIERS) 2015, Prague, Czech Republic, July 6-9 (2015).

14.(1563) H. Kameda, S. Yanase, K. Tomioka, S. Hara, and J. Motohisa: " Photoluminescence Study of Doping-Induced Crystal Structure Transition in Indium Phosphide Nanowires,"the 17th International Conference on Modulated Semiconductor Structures(MSS-17), Sendai, Japan, July 26-31 (2015).

15.(1564) K. Tomioka, J. Motohisa, and T. Fukui: " Heterogeneous integration of vertical III-V nanowires on Si and Ge and their applications (invited), "The 20th American Conference on Crystal Growth and Epitaxy and The 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy (ACCGE-20/OMVPE-17), Big Sky, Montana,USA, August 2-7 (2015).

16.(1565) S. Kasai, S. Inoue, S. Okamoto, R. Kuroda, and M. Sato:" Detection and control of charge state in single molecules using a semiconductor nanowire FET,"International Workshop on Molecular Architectonics, Shiretoko, Japan, August 3-6 (2015).

17.(1566) X. Yin, P. Liu, H. Tanaka, and S. Kasai: " Electrical characterization of threebranch nano-junction device based on graphene nanoribbon crossbar,"International Workshop on Molecular Architectonics, Shiretoko, Japan, August 3-6 (2015).

18.(1567) M. Akai-Kasaya, A. Setiadi, H. Fujii, S. Kasai, Y. Kanai, K. Matsumoto, and Y.Kuwahara: " Molecular noise sources incorporated into carbon nanotube circuits aiming the emergence of collective stochastic resonance, " International Workshop on Molecular Architectonics, Shiretoko, Japan, August 3-6 (2015).

19.(1568) A. Setiadi, H. Fujii, M. Akai-Kasaya, S. Kasai, Y. Kanai, K. Matsumoto, and Y.Kuwahara: " Molecular characterization using current noise measurement of carbon nanotubes device at room temperature, "International Workshop on Molecular Architectonics, Shiretoko, Japan, August 3-6 (2015).

20.(1569) M. Sato, X. Yin, R. Kuroda, and S. Kasai: " Detection and characterization of local surface charge dynamics in a GaAs-based nanowire through metal-tip-induced current noise,"11th Topical Workshop on Heterostructure Microelectronics (TWHM2015), Takayama, Japan, August 23-26 (2015).

21.(1570) K. Nishiguchi and T. Hashizume," Gate-induced current instability of AlGaN/GaN HEMTs, " 11th Topical Workshop on Heterostructure Microelectronics (TWHM2015), Takayama, Japan, August 23-26 (2015).

22.(1571) J. Ohira, Z. Yatabe, and T. Hashizume," Oxygen annealing process of GaN MOS structures, "11th Topical Workshop on Heterostructure Microelectronics (TWHM2015), Takayama, Japan, August 23-26 (2015).

23.(1572) Z. Yatabe, J. Ohira, T. Sato, and T. Hashizume: " Influence of dry etching on Al2O3/AlGaN/GaN MOS interface properties, " 11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015), Takayama, Japan, August 23-26 (2015).

24.(1573) M. Edamoto, Y. Kumazaki, Z. Yatabe, T. Sato, and T. Hashizume:" High-selective etching of p-GaN layers on AlGaN/GaN heterostructures by electrochemical process, "11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015),Takayama, Japan, August 23-26 (2015).

25.(1574) S. Omi, Y. Kumazaki, Z. Yatabe, and T. Sato: " Electrochemical Formation of Cu2O Films on n-type InP and n-type GaN Substrates,"11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015), Takayama, Japan, August 23-26 (2015).

26.(1575) H. Kida, Y. Kumazaki, Z. Yatabe, and T. Sato: " Photoelectrochemical characterization of n-type GaN porous structures for use in photocatalytic water-splitting system,"11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015),Takayama, Japan, August 23-26 (2015).

27.(1576) T. Sato, Y. Kumazaki, and Z. Yatabe: " Electrochemical formation of GaN porous structures for photocatalytic applications (invited), " 11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015), Takayama, Japan, August 23-26 (2015).

28.(1577) M. Akazawa and T. Hashizume: " Characterization of Surfaces and Interfaces of InAlN/GaN Heterostructures (invited), "11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, Aug.30-Sept. 3 (2015).

29.(1578) T. Fukui, F. Ishizaka, and K. Tomioka: " III-V Semiconductor Nanowires Grown by Selective Area MOVPE and Their Device Applications (invited), "5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, Hsinchu, Taiwan, September 6-11(2015)

30.(1579) M. Aono, S.-J. Kim, M.Wakabayashi, S. Kasai, H. Miwa, and M. Naruse:"Amoebainspired Spatiotemporal Dynamics for Physically Implemented Satisfiability Problem Solvers, " Pragmatics of SAT 2015 (POS15), Austin, Texas, USA, September 23 (2015).

31.(1580) K. Tomioka and T. Fukui:"Vertical III-V nanowire transistors for future low-power switches (invited), "12th Sweden - Japan QNANO Workshop, Hjortviken, Hindas,Sweden, September 24-25 (2015).

32.(1581) K. Shirata, S. Kasai, T. Oya, Y. Hagiwara, S. Kaeriyama, and H. Nakamura: " Robust and High Sensitive Myoelectric Signal Detection Utilizing Stochastic Resonance With Carbon Nanotube Composite Paper-based Surface Electrodes, " 2015 International Conference on Solid State Devices and Materials (SSDM2015), Sapporo,Japan, September 27-30 (2015).

33.(1582) K. Tomioka, F. Ishizaka, J. Motohisa, and T. Fukui:"Steep-Slope Tunnel FET Using InGaAs-InP Core-Shell Nanowire/Si Heterojunction, " 2015 International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Japan, September 27-30 (2015).

34.(1583) F. Ishizaka, Y. Hiraya, K. Tomioka, and T. Fukui: " Growth and Characterization of Wurtzite InP/AlInP Core-Shell Nanowires, " 2015 International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Japan, September 27-30(2015).

35.(1584) R. Kodaira, K. Kabamoto, S. Sakita, and S. Hara:" Structural and Magnetic Characterizations of Vertical Ferromagnetic MnAs/Semiconducting InAs Heterojunction Nanowires, " 2015 International Conference on Solid State Devices and Materials(SSDM2015), Sapporo, Japan, September 27-30 (2015).

36.(1585) T. Wada, S. Hara, and J. Motohisa: " Growth and Characterization of Vertical Nanocavity Using Core-Multishell Nanowires, " 2015 International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Japan, September 27-30(2015).

37.(1586) Y. Kumazaki, T. Sato and Z. Yatabe: " Formation of Self-aligned Pore Arrays on n-GaN Substrates by Photo-assisted Electrochemical Etching Process, "2015 International Conference on Solid State Devices and Materials (SSDM2015), Sapporo,Japan, September 27-30 (2015).

38.(1587) K. Tomioka, J. Motohisa, and T. Fukui: " Recent progress in vertical TFET using III-V/Si heterojunction (invited),"Steep Transistors Workshop, Notre Dame, USA,October 5-6 (2015).

39.(1588) K. Tomioka, J. Motohisa, and T. Fukui: " Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions (invited), " 228th ECS Meeting, Phoenix, Arizona, USA, October 11 - 15 (2015).

40.(1589) T. Sato, Y. Kumazaki, and Z. Yatabe: " Effect of High Electric Field on Photoabsorption Properties of GaN Porous Structures,"228th ECS meeting, Phoenix, USA,October 11-15 (2015).

41.(1590) T. Hashizume and Z. Yatabe:"Characterization and control of GaN MOS interfaces for power transistor application (invited), " International Workshop on Dielectric Thin Films (IWDTF-2015), Tokyo, Japan, Nov. 2-4 (2015).

42.(1591) R. Kuroda, M. Sato, and S. Kasai: " Development of High-Precision Digital Wet Etching Technique for GaAs-Based Nanostructure Formation, "28th International Microprocesses and Nanotechnology Conference (MNC 2015), Toyama, Japan, November 10-13 (2015).

43.(1592) H. Tanaka, P. Liu, T. Fujiwara, S. Kasai, X. Yin, T. Yamada, R. Negishi, Y. Kobayashi, M. Fukumori, and T. Ogawa: " Fabrication and Electrical Porperties of Unzipped Single- Layer Graphene Nanoribbon, " 28th International Microprocesses and Nanotechnology Conference (MNC 2015), Toyama, Japan, November 10-13 (2015).

44.(1593) K. Kabamoto, R. Kodaira, S. Sakita, and S. Hara: " Backscattered Electron and Magnetic Force Microscopy Analyses of MnAs/InAs Heterojunction Nanowires, " the 28th International Microprocesses and Nanotechnology Conference (MNC 2015), Toyama, Japan, November 10-13 (2015).

45.(1594) F. Ishizaka, Y. Hiraya, K. Tomioka, and T. Fukui:" Structural and Optical Properties of Wurtzite AlInP Grown on Wurtzite InP Nanowires,"2015 Material Research Society Fall Meeting, Boston, Massachusetts, USA, November 29 - December 4(2015).

46.(1595) K. Tomioka, F. Ishizaka, T. Fukui, and J. Motohisa: " Steep Turn-On Property of Vertical Tunnel FET Using InGaAs-InP Core-Shell Nanowire/Si Heterojunction, " 2015 Material Research Society Fall Meeting, Boston, Massachusetts, USA, November 29 - December 4 (2015).

47.(1596) Y. Kumazaki, Z. Yatabe, and T. Sato:"Size-controlled formation of high-aspect ratio porous nanostructures on GaN substrates utilizing photo-assisted electrochemical etching for photovoltaic applications,"2015 Material Research Society Fall Meeting,Boston, Massachusetts, USA, November 29 - December 4 (2015).

48.(1597) M. Matys, B. Adamowicz, R. Stoklas, M.Akazawa, Z. Yatabe, and T. Hashizume:" Nature and origin of interface states at dielectric/III-N heterojunction interfaces," 2015 Material Research Society Fall Meeting, Boston, Massachusetts, USA, November 29 - December 4 (2015).

49.(1598) T. Asai and S. Kasai: " Neuromorphic Circuits and Devices Exploiting Noise and Fluctuations, "2015 International Symposium on Nonlinear Theory and its Applications(NOLTA2015), Hong Kong, China, December 1-4 (2015).

50.(1599) S. Kasai, K. Shirata, and Y. Inden: " Stochastic Resonance in Nonlinear Electron Devices and Its Application (invited),"Energy, Materials and Nanotechnology: The Collaborative Conference on Crystal Growth 2015 (EMN-3CG 2015), Hong Kong,China, December 9-12 (2015).

51.(1600) T. Sato, Y. Kumazaki, and T. Hashizume: " Photoelectric energy conversion in GaN porous nanostructures formed by electrochemical process (invited) , "Energy, Materials and Nanotechnology: The Collaborative Conference on Crystal Growth 2015 (EMN-3CG 2015), Hong Kong, China, December 9-12 (2015).

52.(1601) T. Fukui, F. Ishizaka, and K. Tomioka: " Semiconductor nanowire array grown by selective area epitaxy and their applications (invited),"The International Chemical Congress of Pacific Basin Societies 2015 (Pacifichem 2015), Honolulu, Hawaii, USA,December 15-20 (2015).

53.(1602) S. Kasai, Y. Abe, S. Inoue, K. Shirata, and M. Sato:"Fluctuation-induced dynamics and information transfer in nonlinear nanodevices and molecular devices (invited),"The International Chemical Congress of Pacific Basin Societies 2015 (Pacifichem2015), Honolulu, Hawaii, USA, December 15-20 (2015).

54.(1603) R. Wakamiya, S. Kasai, M. Aono, M. Naruse, and M. Hiroyoshi:"Amoeba-inspired computing system utilizing charge dynamics in a capacitor network with spatiotemporal fluctuation, "The International Chemical Congress of Pacific Basin Societies 2015 (Pacifichem 2015), Honolulu, Hawaii, USA, Dec. 15-20 (2015).

55.(1604) A. Setiadi, H. Fujii, M. Akai-Kasaya, S. Kasai, Y. Kanai, K. Matsumoto, and Y.Kuwahara:" Molecular characterization using current noise measurement of carbon nanotubes device, "The International Chemical Congress of Pacific Basin Societies 2015 (Pacifichem 2015), Honolulu, Hawaii, USA, Dec. 15-20 (2015).

56.(1605) P. Liu, S. Kasai, X. Yin, T.-K. Yamada, T. Ogawa, M. Fukumori, and H. Tanaka:" Fabrication and electrical properties of X- and Y- structures of unzipped singlelayer graphene nanoribbons,"The International Chemical Congress of Pacific Basin Societies 2015 (Pacifichem 2015), Honolulu, Hawaii, USA, Dec. 15-20 (2015).

57.(1606) M. T. Elm, S. Hara, and P. J. Klar:"Fabrication and Characterization of MnAs/InAs Hybrid Nanowires Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy(invited), " The International Chemical Congress of Pacific Basin Societies 2015(Pacifichem 2015), Honolulu, Hawaii, USA, Dec. 15-20 (2015).

58.(1607) T. Sato, Y. Kumazaki, M. Edamoto, M. Akazawa and T. Hashizume: " Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions (invited),"SPIE PhotonicsWest 2016, The Moscone Center, San Francisco, USA, February 13-18 (2016).

59.(1608) S. Hara: " Axial Heterojunctions in Free-Standing Ferromagnetic MnAs/ Semiconducting InAs Nanowires (invited lecture), " the 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / the 9th International Conference on Plasma-Nano Technology and Science (ISPlasma 2016 / IC-PLANTS 2016), Nagoya, Japan, March 6-10 (2016).

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