研究内容・成果 - 研究業績

学会誌論文

学会誌論文等:25件

 (カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1360) S. Inoue, R. Kuroda, X. Ying, M. Sato, and S. Kasai : " Detection of molecular charge dynamics through current noise in a GaAs-based nanowire FET, " Jpn. J.Appl. Phys. Vol. 55, pp.04DN07-1-5 (2015).

2.(1361) K. Hiraishi, T.Wada, K. Kubo, Y. Otsu, M. Ikebe, and E. Sano:"Low-power, smallsize transmitter module with metamaterial antenna, " Analog Integrated Circuits and Signal Processing, Vol. 83, No. 1, pp. 1-9 (2015).

3.(1362) M. Aono, S. Kasai, S.-J. Kim, M.Wakabayashi, H. Miwa, and M. Naruse:"Amoebainspired nanoarchitectonic computing implemented using electrical Brownian ratchets,"Nanotechnology, Vol. 26, pp.234001-1-8 (2015).

4.(1363) X. Yin, M. Sato, and S. Kasai: " Analysis on Non-ideal Nonlinear Characteristics of Graphene-based Three-branch Nano-junction Device, "IEICE Trans. Electron.,Vol. E98C, pp.434-438 (2015).

5.(1364) Z. Yatabe, J. T. Asubar, T. Sato, and T. Hashizume: " Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of Al-

GaN surfaces, "Physica Status Solidi (a), Vol. 212, No.5, 1075-1080 (2015).

6.(1365) Y. Abe, R. Kuroda, X. Yin, M. Sato, T. Tanaka, and S. Kasai: " Structural parameter dependence of directed current generation in GaAs nanowire-based electron Brownian ratchet devices, "Jpn. J. Appl. Phys., Vol. 54, p 06FG02-1-4 (2015).

7.(1366) Y. Sun, K. Ashida, S. Sasaki, M. Koyama, T. Maemoto, S. Sasa, S. Kasai, I. Iniguezde-la-Torre, and T. Gonzalez:"Fabrication and Characterization of Fully Transparent ZnO Thin-Film Transistors and Self-Switching Nano-Diodes, " J. Phys. Conf.Series, Vol. 647, pp.012068-1-4 (2015).

8.(1367) Shinjiro Hara and Keita Komagata:"Selective-area Growth and Magnetic Reversals of Ferromagnetic Nanoclusters on Semiconducting Substrate for Magnetic Logic Applications, "Phys. Status Solidi B, Vol. 252, No. 9, pp. 1925-1933 (2015)

9.(1368) 成瀬誠, 青野真士, 葛西誠也, 堀裕和, Serge Huant, 金成主:「フォトニックインテリジェンス(解説)」, フォトニクスニュース, 第1巻, 第2号, pp. 51-57 (2015).

10.(1369) H. Tanaka, R. Arima, M. Fukumori, D. Tanaka, R. Negishi, Y. Kobayashi, S. Kasai,T. Yamada, and T. Ogawa:"Method for Controlling Electrical Properties of Single-Layer Graphene Nanoribbons via Adsorbed Planar Molecular Nanoparticles, "Sci.Rep., Vol. 5, pp.12341-1-10 (2015).

11.(1370) Shinya Sakita, and Shinjiro Hara: " Growth of AlGaAs Nanostructures on Crystallized Al2O3 Interlayers for Semiconducting Nanowire Growth on Glass Substrate, "Jpn. J. Appl. Phys., Vol. 54, No. 7, pp.075504-1-8 (2015).

12.(1371) J. T. Asubar, Y. Kobayashi, K. Yoshitsugu, Z. Yatabe, H. Tokuda, M. Horita,Y. Uraoka, T. Hashizume, and M. Kuzuhara: " Current Collapse Reduction in AlGaN/GaN HEMTs by High Pressure Water Vapor Annealing, " IEEE Trans. Electron Devices, Vol. 62, pp. 2423-2428 (2015).

13.(1372) Thaer M. Dieb, Masaharu Yoshioka, Shinjiro Hara, and Marcus C. Newton:"Framework for Automatic Information Extraction from Research Papers on Nanocrystal Devices, "Beilstein J. Nanotechnol., Vol. 6, pp. 1872-1882 (2015).

14.(1373) Katsuhiro Tomioka, Fumiya Ishizaka, and Takashi Fukui:" Selective-area growth of InAs nanowires on Ge and vertical transistor application, "Nano Letters, Vol. 15,pp.7253-7257 (2015).

15.(1374) K. Tomioka, J. Motohisa, and T. Fukui: " Surrounding-Gate Tunnel FET Using InAs/Si Heterojunction, "ECS Transactions, Vol. 69, No.2, pp.109 - 118 (2015).

16.(1375) T. Sato, H. Kida, Y. Kumazaki, and Z. Yatabe: " Bias-dependent Photoabsorption Properties of GaN Porous Structures under Back-side Illumination, "ECS Transactions,Vol. 69, No. 2, pp.161-166 (2015).

17.(1376) Martin Fischer, Matthias T. Elm, Hiroaki Kato, Shinya Sakita, Shinjiro Hara, and Peter J. Klar: " Analysis of Magnetic Random Telegraph Noise in Individual Arrangements of A Small Number of Coupled MnAs Nanoclusters, "Phys. Rev. B, Vol. 92, No. 16, pp.165306-1-7 (2015).

18.(1377) D. Uchida, M. Ikebe, J. Motohisa, and E. Sano:"Low-power single-slope analog-to-digital converter with intermittently working time-to-digital converter, " J. Signal Processing, Vol. 19, No. 6, pp. 219-226 (2015).

19.(1378) J. T. Asubar1, Y. Sakaida1, S. Yoshida1, Z. Yatabe, H. Tokuda, T. Hashizume, and M. Kuzuhara: " Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high- electron-mobility transistors, "Applied Physics Express, Vol.8, pp.111001-1-4 (2015).

20.(1379) T. Sato, Y. Kumazaki, H. Kida, A. Watanabe, Z. Yatabe, and S. Matsuda: " Large Photocurrents in GaN Porous Structures with a Redshift of the Photoabsorption Edge, "Semiconductor Science and Technology, Vol.31, No.1, pp.014012-1-6 (2016).

21.(1380) M. Sato, X. Yin, R. Kuroda, and S. Kasai: " Detection of discrete surface charge dynamics in GaAs-based nanowire through metal-tip-induced current fluctuation, "Jpn. J. Appl. Phys., Vol.55, pp. 02BD01-1-5 (2016).

22.(1381) Shinya Sakita, Shinjiro Hara, Matthias T. Elm, and Peter J. Klar: " Selective-Area Growth and Magnetic Characterization of MnAs/AlGaAs Nanoclusters on Insulating Al2O3 Layers Crystallized on Si (111) Substrates, " Appl. Phys. Lett.,Vol. 108, No. 4, pp.043108-1-5 (2016).

23.(1382) T. Itatsu, E. Sano, Y. Yabe, V. Ryzhii, and T. Otsuji:"Enhanced terahertz emission from monolayer graphene with metal mesh structure, "Materials Today: Proceedings,Vol. 3, pp. S221-S226 (2016).

24.(1383) Yoshihiro Hiraya, Fumiya Ishizaka, Katsuhiro Tomioka, and Takashi Fukui:"Crystal phase transition to green emission wurtzite AlInP by crystal structure transfer, "Applied Physics Express, Vol.9, pp. 035502-1-4 (2016).

25.(1384) T. Sato, Y. Kumazaki, M. Edamoto, M. Akazawa, and T. Hashizume: " Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions (invited), "Gallium Nitride Materials and Devices XI, pp. 97480Y-1-7 (2016).

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