JAPANESE VERSION
Research Center For Integrated Quantum Electronics, Hokkaido University
       
MOVPE Nanostructure Group
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Research Topics
■Research topics

(1) Formation of quantum nanostructure arrays and by metalorganic vapor phase epitaxial growth
It is important to realize size- and site-controlled array of compound semiconductor quantum nanostructures, namely, "Quantum Crystals", in order for their application to quantum electronic and optoelectronic devices, making full use of the superior electronic and optical properties of compound semiconductors. The objective of this research subject is to develop a technology for the realization of high-density quantum nanostructure arrays using metalorganic vapor phase epitaxial growth, which is a key technology to realize compound semiconductor devices available on market. To now, we have succeeded in the formation of "quantum dot network" structure (Fig.1), in which quantum wires and quantum dots are arranged and coupled together in about 200nm periodicity, and periodic triangular-lattice array of hexagonal pillars (Fig.2) which can be used for photonic crystals.
SEM image of quantum dot network SEM image of triangular-lattice photonic crystal with hexagonal pillars formed by selective area MOVPE growth
Fig1 SEM image of quantum dot network
Fig2 SEM image of triangular-lattice photonic crystal with hexagonal pillars formed by selective area MOVPE growth
(2) Physics and device application of quantum nanostructure arrays
The objective of this subject is to understand physics in high-density coupled array of quantum nanostructures, and their electronic and photonic device applications via controlling both the quantum state of electrons and photonic state of light. We have succeed in the fabrication of quantum wire lasers (Fig. 3) realized by using high-density array of quantum wires, single electron transistors and their integrated circuits (Fig. 4). We also are trying to explore the electronic states and single electron transport in single and coupled quantum dots by optical and electronic study, as well as properties of photonic crystals.
Schematic Cross section of Quantum Wire Laser and (b) its output characteristics.
Fig3
Schematic Cross section of Quantum Wire Laser and (b) its output characteristics.
(a) SEM image of Single Electron Inverter formed by selective area MOVPE, (b) equivalent circuit
(c) Coulomb Oscillation of single electron transistor, and (d) I-O characteristics of single electron inverter
Fig4
(a) SEM image of Single Electron Inverter formed by selective area MOVPE, (b) equivalent circuit, (c) Coulomb Oscillation of single electron transistor, and (d) I-O characteristics of single electron inverter.

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