The paper "Characterization and Control of MOS Interface States in GaN-based MOS-HEMTs Using Al2O3 Gate Insulator" presented by Yujin Hori, Zenji Yatabe, and Tamotsu Hashizume won the Outstanding Poster Presentation Award at "10th International Conference
The paper "Characterization and Control of MOS Interface States in GaN-based MOS-HEMTs Using Al2O3 Gate Insulator" presented by Yujin Hori, Zenji Yatabe, and Tamotsu Hashizume won the Outstanding Poster Presentation Award at "10th International Conference on Nitride Semiconductors".
