2007 RCIQE International Seminar on
"Advanced Semiconductor Materials and Devices"
February 8th-9th, 2007
Conference Hall, Hokkaido University
Program (download PDF version of Program (with Japanese))
Thursday, February 8th
| 10:00 - 10:10 |
"Opening Address" |
|
Takashi Fukui, Hokkaido University |
| - Formation of Nanostructures - |
| 10:10 - 10:50 |
"Growth fundamentals of GaAs and InAs nanowires by using vapor-liquid-solid mechanism" |
|
Kenji Hiruma, Keiichi Haraguchi, Masamitsu Yazawa and Toshio Katsuyama, Central Research Laboratory, Hitachi Ltd. |
| 10:50 - 11:30 |
"Evolution mechanism of InAs quantum dot on GaAs(001) investigated by STMBE: in-situ STM observation during MBE growth" |
|
Shiro Tsukamoto, University of Tokyo |
| 11:30 - 11:50 |
"MOVPE growth and structural characterization of ferromagnetic MnAs nanoclusters" |
|
Shinjiro Hara, Hokkaido University |
| 11:50-12:10 |
Electrochemical formation of uniform arrays of InP nanostructures |
|
Taketomo Sato, Hokkaido University |
| 12:10 - 13:30 |
Lunch Break |
| - Advanced Optoelectronic and Electronic Devices - |
| 13:30 - 14:10 |
"Optical properties of GaN films for different nonpolar orientations" |
|
Holger Grahn, Paul Drude Institute, Germany |
| 14:10 - 14:50 |
"High-efficiency InAlGaN-based UV LEDs" |
|
Hideki Hirayama, RIKEN |
| 14:50 - 15:10 |
Break |
| 15:10 - 15:50 |
"AlGaN/GaN HFETs for power switching applications" |
|
Tsuyoshi Tanaka, Matsushita Electric Industrial Co., Ltd. |
| 15:50 - 16:10 |
"MBE growth and in-situ XPS characterization of silicon interlayers for surfaces passivation of GaAs quantum devices" |
|
Masamichi Akazawa and Hideki Hasegawa, Hokkaido University |
| 16:10 - 17:40 |
Poster Viewing Session |
| 17:40 - 18:20 |
Lab Tour to RCIQE |
| 18:30 - 20:00 |
Reception (Clark Memorial Student Center 2F) |
| - Physics and Device Application of Nanostructuers - |
| 9:15 - 9:55 |
"Single-electron control of supercurrent transport in semiconductor quantum dots" |
|
Silvano De Franceschi, Jorden van Dam, Yong-Joo Doh, Leo Kouwenhoven, Aarnoud Roest and Erik Bakkers, CEA-DRFMC, Grenoble, France, Kavli Institute of Nanoscience, Delft, The Netherlands |
| 9:55 - 10:30 |
"Growth and photoluminescence study of semiconductor nanowires" |
|
Junichi Motohisa, Hokkaido University |
| 10:30 - 10:50 |
Break |
| 10:50 - 11:30 |
"Nanoscale metal switches and their application to reconfigurable circuits" |
|
Hisao Kawaura, NEC Corporation |
| 11:30-12:10 |
"Photon-spin qubit-conversion based on dynamic nuclear polarization of a single quantum dot" |
|
Shunichi Muto, Satoru Adachi and Hirotaka Sasakura, Hokkaido University
|
| 12:10 - 13:30 |
Lunch Break |
| - Carbon Nanoelectronics - |
| 13:30 - 14:10 |
"Controlling the electronic structure of bilayer graphene" |
|
Taisuke Ohta, Fritz Haber Institute, Germany, Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, USA |
| 14:10 - 14:50 |
"Electrical and optical characterization of carbon nanotube FETs" |
|
Takashi Mizutani, Nagoya University |
| 14:50 - 15:25 |
"Electrical properties of nano-graphite grown on silicon carbide" |
|
Kanji Yoh, Hokkaido University |
| 15:25 - 15:30 |
"Closing Remarks" |
|
Kanji Yoh, Hokkaido University |
|
