Research - Research Achievements

Journal Papers



1.(1430) K. Fukuda, H. Asai, J. Hattori, M. Shimizu, and T. Hashizume: " A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps, "Jpn. J. Appl. Phys., Vol. 57, pp. 04FG04-1 - 5 (2018).

2.(1431) T. Hashizume, K. Nishiguchi, S. Kaneki, J. Kuzmik, and Z. Yatabe: " State of theart on gate insulation and surface passivation for GaN-based power HEMTs (Invited review paper), "Mat. Sci. Semicond. Process., Vol. 78, pp. 85 - 95 (2018).

3.(1432) K. Ando, K. Ueyoshi, K. Orimo, H. Yonekawa, S. Sato, H. Nakahara, S. Takamaeda-Yamazaki, M. Ikebe, T. Asai, T. Kuroda, and M. Motomura: " BRein memory: a single-chip binary/ternary reconfigurable in-memory deep neural network accelerator achieving 1.4TOPS at 0.6W, " IEEE Journal of Solid-State Circuits, Vol. 53, pp. 983 - 994 (2018).

4.(1433) 佐藤威友:「新規製造現場での基盤技術光電気化学反応を利用した半導体の低損傷加工と高精度エッチング技術」ケミカルエンジニアリング, Vol. 63, pp. 399-405 (2018).

5.(1434) P. Ambalathankandy, S. Takamaeda-Yamazaki, M. Motomura, T. Asai, M. Ikebe, and H. Kusano: " Real-time HDTV to 4K and 8K-UHD conversions using antialiasing based super resolution algorithm on FPGA, " Microprocessors and Microsystems, Vol. 60, pp. 21 - 31 (2018).

6.(1435) M. Akazawa and T. Hasezaki: " Effect of insertion of ultrathin Al2O3 interlayer at metal/GaN interfaces, "Phys. Status Solidi B, Vol. 255, No. 5, pp. 1700382-1 - 6 (2018).

7.(1436) T. Yamada, H. Fukuda, T. Fujiwara, P. Liu, K. Nakamura, S. Kasai, A. L. Vazquez de Parga, and H. Tanaka: " Energy gap opening by crossing drop cast single-layer graphene nanoribbons, "Nanotechnology, Vol. 29, pp.315705-1 - 10 (2018).

8.(1437) Hironori Gamo and Katsuhiro Tomioka:"Selective-area growth of pulse-doped InAs nanowires on Si and vertical transistor application, "J. Crystal Growth, Vol. 500, pp. 58 - 62 (2018).

9.(1438) K. Saito, N. Suefuji, S. Kasai, and M. Aono:"Amoeba-inspired electronic computing system and its application to autonomous walking of a multi-legged robot,"Journal of Applied Logics, Vol. 5, No. 9, pp.1799 - 1814 (2018).

10.(1439) K. Isobe and M. Akazawa:"Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode, "AIP Advances, Vol. 8, Issue 11, pp. 115011-1 - 6 (2018).

11.(1440) Ryoma Horiguchi, Shinjiro Hara, and Masaya Iida: " Magnetic Domain Structure and Domain Wall Analysis of Ferromagnetic MnAs Nanodisks Selectively-Grown on Si (111) Substrates for Spintronic Applications, "J. Appl. Phys., Vol. 124, No. 15, 153905-1 - 7 (2018).

12.(1441) S. Matsumoto, M. Toguchi, K. Takeda, T. Narita, T. Kachi, and T. Sato: " Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN, "Jpn. J. Appl. Phys., Vol. 57, pp. 121001-1 - 7 (2018).

13.(1442) T. Hashizume, S. Kaneki, T. Oyobiki, Y. Ando, S. Sasaki, and K. Nishiguchi: " Effects of postmetallization annealing on interface properties of Al2O3/GaN structures,"Appl. Phys. Express, Vol. 11, pp. 124102-1 - 4 (2018).

14.(1443) J. T. Asubar, H. Tokuda, M. Kuzuhara, Z. Yatabe, K. Nishiguchi, and T. Hashizume:" Improved linearity, stability, and thermal performance of multi-mesa-channel AlGaN/GaN HEMTs, "Journal of the Physics Society of the Philippines, Vol. 1, pp. 39 - 44 (2018).

15.(1444) M. Matys, K. Nishiguchi, B. Adamowicz, J. Kuzmik, and T. Hashizume: " Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron
mobility transistors, "J. Appl. Phys., Vol. 124, No. 22, pp. 224502-1 - 8 (2018).

16.(1445) Yusuke Minami, Akinobu Yoshida, Junichi Motohisa, Katsuhiro Tomioka,"Growth and characterization of GaAs nanowires on Ge(111) substrates by selective-area MOVPE "J. Crystal Growth, Vol. 506, pp. 135 - 139 (2019).

17.(1446) Ryoma Horiguchi, Shinjiro Hara, Masaya Iida, and Kohei Morita: " Selective-Area Growth of Magnetic MnAs Nanodisks on Si (111) Substrates Using Multiple Types of Dielectric Masks, "J. Cryst. Growth, Vol. 507, pp. 226 - 231 (2019).

18.(1447) Ryutaro Kodaira, Ryoma Horiguchi, and Shinjiro Hara:"Magnetization Characterization of MnAs Nanoclusters at Close Range in Bended MnAs/InAs Heterojunction Nanowires, "J. Cryst. Growth, Vol. 507, pp. 241 - 245 (2019).

19.(1448) Junichi Motohisa, Hiroki Kameda, Masahiro Sasaki, and Katsuhiro Tomioka: "Characterization of nanowire light-emitting diodes grown by selective-area metalorganic vapor-phase epitaxy, "Nanotechnology, Vol. 30, pp. 134002-1 - 9 (2019).

20.(1449) Kohei Chiba, Akinobu Yoshida, Katsuhiro Tomioka, and Junichi Motohisa: " Vertical InGaAs Nanowire Array Photodiodes on Si, "ACS Photonics, Vol. 6, pp. 260- 264 (2019).

21.(1450) Y. Ando, S. Kaneki, and T. Hashizume: " Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates, " Appl. Phys. Express, Vol. 12, pp. 024002-1 - 5 (2019).

22.(1451) M. ˇTapajna, J. Drobn´y, F. Gucmann, K. Huˇsekov´a, D. Greguˇsov´a, T. Hashizume, and J. Kuzm´ık: " Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, "Mat. Sci. Semicond. Process., Vol. 91, pp.356 - 361 (2019).

23.(1452) S. Nakazawa, H.-A. Shih, N. Tsurumi, Y. Anda, T. Hatsuda, T. Ueda, T. Kimoto, and T. Hashizume:"Effects of post-deposition annealing in O2 on threshold voltage of Al2O3 /AlGaN/GaN MOS heterojunction field-effect transistors, "Jpn. J. Appl. Phys., Vol. 58, pp. 030902-1 - 4 (2019).

24.(1453) F. Horikiri, N. Fukuhara, H. Ohta, N. Asai, Y. Narita, T. Yoshida, T. Mishima, M. Toguchi, K. Miwa, and T. Sato: " Simple wet-etching technology for GaN using an electrodeless photo-assisted electrochemical reaction with a luminous array film as the UV source, "Appl. Phys. Express, Vol. 12, pp. 031003-1 - 6 (2019).

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