Research - Research Achievements

Conference Papers

国際会議における講演:54件(うち招待講演18件)

(カッコ内は前身の量子界面エレクトロニクス研究センターの研究を含めた通し番号)

1.(1496) S. Sakita and S. Hara:" Growth of AlGaAs Nanowires on Planar Al2O3 Layers Deposited on Si (111) and Amorphous Glass Substrates, "2014 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 21-25 (2014).

2.(1497) F. Ishizaka, K. Tomioka, and T. Fukui:"Wurtzite InP/AlGaP Core-Shell Nanowires toward Direct Band Gap Transition,"2014 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 21-25 (2014).

3.(1498) M. Sato, X. Yin, and S. Kasai:" Surface Dependence of Nonlinear Characteristic in GaAs-based Three branch Nanowire Junctions, "41st International Symposium on Compound Semiconductor (ISCS), Montpellier, France, May 11-15 (2014).

4.(1499) Katsuhiro Tomioka, and Takashi Fukui: "Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions (Invited), "225th ECS meeting, Orlando, USA, May 12 (2014).

5.(1500) M. Akazawa, M. Chiba, and T. Nakano:" Process-dependent properties of InAlN surface and ALD-Al2O3/InAlN interface, "2014 International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH 2014), Denver,Colorado, USA, May 19-22 (2014).

6.(1501) K. Nishiguchi and T. Hashizume:" Surface charging effects on current stability of AlGaN/GaN HEMTs, "2014 International Meeting for Future of Electron Devices,Kansai (IMFEDK-2014), Kyoto, June 19-20 (2014).

7.(1502) M. Akazawa, T. Nakano and M. Chiba:" Impact of Annealing on Properties of ALD Al2O3/InAlN Interfaces, "56th Electronic Materials Conference (EMC56), UCSB,Santa Barbara, California, USA, June 25-27 (2014).

8.(1503) X. Yin, M. Sato, and S. Kasai:" Effect of metal-graphene contact on nonlinear characteristics of graphene-based three-branch nano-junction device, " 2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2014), Kanazawa, Japan, July 1-3 (2014).

9.(1504) H. Kato, S. Sakita, and S. Hara:" Magnetic Characterization of Lateral MnAs
Nanowires Selectively Grown by Metal-Organic Vapor Phase Epitaxy, " 17th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVII),
Lausanne, Switzerland, July 13-18 (2014).

10.(1505) S. Sakita, H. Kato, and S. Hara:" Selective-Area Growth of AlGaAs Nanostructures on Al2O3/Glass Substrate,"17th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVII), Lausanne, Switzerland, July 13-18 (2014).

11.(1506) Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, and Takashi Fukui:" Selectivearea growth of vertical InAs nanowires on Ge(111) (Invited), " 17th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVII), Lausanne,Switzerland, July 13-18 (2014).

12.(1507) E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui: "InGaAs axial junction nanowire array solar cells with Sn-doped contact layer, " 17th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVII), Lausanne, Switzerland,July 13-18 (2014).

13.(1508) K. Tomioka, F. Ishizaka, and T. Fukui:" Selective-area growth of InAs nanowire inside Si(100) and SOI substrates toward tunnel FET applications,"17th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-VXII), Lausanne,Switzerland, July 13-18 (2014).

14.(1509) J. Ishizaka, Y. Hiraya, K. Tomioka, and T. Fukui:"Selective-area growth of wurtzite InP/AlGaP core-shell nanowires, "17th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-VXII), Lausanne, Switzerland, July 13-18 (2014).

15.(1510) Katsuhiro Tomioka and Takashi Fukui:" III-V nanowires on patterned Si substrates and their applications (Invited), "10th International Workshop on Epitaxial Semiconductor on Patterned Substrates and Novel Index Surfaces (ESPS-NIS 2014),Traunkirchen, Austria, July 20-23 (2014).

16.(1511) T. Sato, Y. Kumazaki, A. Watanabe, and Z. Yatabe:" Electrochemical Formation of III-V Semiconductor Porous Nanostructures (Invited), "6th IEEE International Nanoelectronics Conference 2014 (INEC-2014), Sapporo, Japan, July 28-31 (2014).

17.(1512) A. Watanabe, Y. Kumazaki, Z. Yatabe, and T. Sato:" Structural control of GaN porous structures for high-sensitive chemical sensors, "6th IEEE International Nanoelectronics Conference 2014 (INEC-2014), Sapporo, Japan, July 28-31 (2014).

18.(1513) K. Konishi, T. Miyamoto, Z. Cui, T. Ishikura, K. Yoh, and A. Hashimoto: "Enhanced spin-orbit interaction in the hydrogenated Graphene, "6th IEEE International Nanoelectronics Conference 2014 (INEC-2014), Sapporo, Japan, July 28-31 (2014).

19.(1514) Zhixin Cui, Rajagembu Perumal, Tomotsugu Ishikura, Keita Konishi, Kanji Yoh,and Junichi Motohisa:"Growth and characterization of transport properties of [110]-oriented InAs nanowires,"6th IEEE International Nanoelectronics Conference 2014 (INEC-2014), Sapporo, Japan, July 28-31 (2014).

20.(1515) Tomotsugu Ishikura, Zhixin Cui, Keita Konishi, Kanji Yoh, and Tetsuya Uemura:"Enhanced spin injection from ferromagnet into InAs through MgO tunnel barrier,"6th IEEE International Nanoelectronics Conference 2014 (INEC-2014), Sapporo,Japan, July 28-31 (2014).

21.(1516) E. Sano:" Electrical properties and applications of carbon nanotube composites (Invited)," 6th IEEE International Nanoelectronics Conference 2014 (INEC-2014),Sapporo, Japan, July 28-31 (2014).

22.(1517) S. Kasai:" Stochastic Resonance and Related Phenomena in Nonlinear Electron Nanodevices (Invited), " 6th IEEE International Nanoelectronics Conference 2014(INEC-2014), Sapporo, Japan, July 28-31 (2014).

23.(1518) M. Sato, X. Yin, R. Kuroda, and S. Kasai: "Surface dependence of nonlinear electrical characteristics in GaAs-based three-branch nanowire junction devices, " 6th IEEE International Nanoelectronics Conference 2014 (INEC-2014), Sapporo, Japan, July 28-31 (2014).

24.(1519) S. Hara, H. Fujimagari, and S. Sakita:" Formation of Vertical MnAs/InAs Heterojunction Nanowires (Invited), " the Nano Science + Engineering Conferences, the SPIE Optics + Photonics Conferences 2014, San Diego, California, USA, August 17-21 (2014).

25.(1520) T. M. Dieb, M. Yoshioka S. Hara, and M. C. Newton:" Automatic Annotation of Parameters from Nanodevice Development Research Papers, "4th International Workshop on Computational Terminology (COMPUTERM 2014), COLING 2014 Workshop, Dublin, Ireland, August 23 (2014).

26.(1521) Z. Yatabe, T. Sato, and T. Hashizume: "Interface Trap States in Al2O3/AlGaN/GaN Structure Induced by ICP Etching of AlGaN Surfaces (Invited), " International Workshop on Nitride Semiconductors 2014 (IWN2014), WrocÃlaw, Poland, August 24-29 (2014).

27.(1522) Y. Kumazaki, A. Watanabe, Z. Yatabe, and T. Sato:" Correlation between Structural and Optical Properties of GaN Porous Structures Formed by Photo-assisted Electrochemical Etching, "International Workshop on Nitride Semiconductors 2014(IWN2014), WrocÃlaw, Poland, August 24-29 (2014).

28.(1523) K. Nishiguchi, J. T. Asubar, and T. Hashizume:" Spatial discrimination of surface charging region in AlGaN/GaN HEMTs investigated using dual-gate architecture," International Workshop on Nitride Semiconductors 2014 (IWN2014), WrocÃlaw,Poland, August 24-29 (2014).

29.(1524) J. T. Asubar, K. Nishiguchi, and T. Hashizume: "Reduced Thermal Resistance in Al-GaN/GaN Multi-Mesa-Channel High Electron Mobility Transistors, "International Workshop on Nitride Semiconductors 2014 (IWN2014), WrocÃlaw, Poland, August 24-29 (2014).

30.(1525) Katsuhiro Tomioka and Takashi Fukui:" Selective-area growth of III-V nanowires on Si and their applications (Invited), "8th Nanowire Growth Workshop/Nanowire 2014, Eindhoven, Netherland, Aug. 25-29 (2014).

31.(1526) S. Hara:"Formation of Vertical MnAs/InAs Heterojunction Nanowires for Nanoelectronic Applications (Invited),"Physics Colloquium (Physikalisches Kolloquium), Institute of Physics I, Justus-Liebig University of Giessen, Giessen, Germany, August 26(2014).

32.(1527) T. Itatsu, E. Sano, Y. Yabe, V. Ryzhii, and T. Otsuji:"Enhanced terahertz emission from monolayer graphene with metal mesh structure, "International Conference on Diamond and Carbon Materials 2014, Madrid, Spain, Sept. 7-11 (2014).

33.(1528) T. Wada, S. Hara, and J. Motohisa:" Design and Growth of Nanowire Nanocavity, " 2014 International Conference on Solid State Devices and Materials (SSDM 2014),Tsukuba, Japan, September 8-11 (2014).

34.(1529) Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, and Takashi Fukui:" Integration of Vertical InAs Nanowires on Ge(111) by Selective-Area MOVPE,"2014 International Conference on Solid State Devices and Materials (SSDM 2014), Tsukuba, Japan,September 8-11 (2014).

35.(1530) S. Inoue, R. Kuroda, M. Sato, and S. Kasai:" Detection of Molecular Charge Dynamics through Current Noise in A GaAs-based Nanowire FET,"2014 International Conference on Solid State Devices and Materials (SSDM 2014), Tsukuba, Japan,September 8-11 (2014).

36.(1531) Zhixin Cui, Rajagembu Perumal, Tomotsugu Ishikura, Keita Konishi, Kanji Yoh,and Junichi Motohisa:" Characterization of Electron Transport Properties of [110]InAs Nanowires by Hall Effect Measurements, " 2014 International Conference on Solid State Devices and Materials (SSDM 2014), Tsukuba, Japan, September 8-11(2014).

37.(1532) M. Aono, Song-Ju Kim, S. Kasai, and H. Miwa:"Amoeba-Inspired Heuristic Search for NP-Complete Problem Solution at the Nanoscale (Invited), " 2014 International Symposium on Nonlinear Theory and its Applications (NOLTA2014), Luzern,Switzerland, Sept. 14-18 (2014).

38.(1533) T. Itatsu, E. Sano, Y. Yabe, V. Ryzhii, and T. Otsuji:" Increased terahertz emission from monolayer graphene with metal mesh structure,"Recent Progress in Graphene Research (Taipei, Taiwan), Sept. 21-25 (2014).

39.(1534) T. Sato, A. Watanabe, Y. Kumazaki, and Z. Yatabe:" Electrochemical Formation of GaN Porous Structures Under UV-Light Irradiation for Photoelectrochemical Application, "2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico,October 5-9 (2014).

40.(1535) A. Watanabe, Y. Kumazaki, Z. Yatabe, and T. Sato:" Structural Properties and Control of GaN Porous Nanostructures Formed by Photo-assisted Electrochemical Process, "The 7th International Symposium on Surface Science (ISSS 2014), Shimane,Japan, November 2-6 (2014).

41.(1536) T. Miyamoto, K. Konishi, and T. Sato: "Correlation between growth time and carrier density in epitaxial graphene on 6H-SiC, " The 7th International Symposium on Surface Science (ISSS2014), Shimane, Japan, November 2-6 (2014).

42.(1537) R. Kodaira, H. Fujimagari, H. Kato, S. Sakita, and S. Hara:" Selective-Area Metal-Organic Vapor Phase Epitaxy of Hetero-Junction Nanowires between Ferromagnetic MnAs and Semiconducting InAs,"27th International Microprocesses and Nanotechnology Conference (MNC 2014), Fukuoka, Japan, November 4-7 (2014).

43.(1538) Y. Abe, T. Tanaka, and S. Kasai:" Structural Parameter Dependence of Directed Current in GaAs Nanowire-Based Electron Brownian Ratchet Device, " 27th International Microprocesses and Nanotechnology Conference (MNC 2014), Fukuoka,Japan, November 4-7 (2014).

44.(1539) K. Konishi, T. Miyamoto, K. Yoh, and T. Sato:" Enhanced spin-orbit interaction in the hydrogenated epitaxial graphene on silicon carbide, "27th International Microprocesses and Nanotechnology Conference (MNC2014), Fukuoka, Japan, November 4-7 (2014).

45.(1540) S. Kasai:" Bio-inspired Nonlinear Nano-devices for Coexisting with Fluctuation (Invited)," 16th Takayanagi Kenjiro Memorial Symposium, Shizuoka, Japan, Nov.11-12 (2014).

46.(1541) T. Fukui, E. Nakai, F. Ishizaka, and K. Tomioka:" III-V Semiconductor nanowires and their photovoltaic applications (Invited), "3rd biennial Conference of the Combined Australian Materials Societies, November 26-28(2014).

47.(1542) Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Muyi Chen, and Takashi Fukui:" Selective-Area Growth of III-V Nanowires and Their Devices (Invited), "MRS fall meeting 2014, Boston, Nov. 30 - Dec. 5 (2014).

48.(1543) Zhixin Cui, Rajagembu Perumal, Tomotsugu Ishikura, Keita Konishi, Kanji Yoh, and Junichi Motohisa:" Growth and Transport Property Characterization of [110]
InAs Nanowire, "MRS fall meeting 2014, Boston, Nov. 30 - Dec. 5 (2014).

49.(1544) Takashi Fukui1, Eiji Nakai1, MuYi Chen, and Katsuhiro Tomioka: "III-V Compound Semiconductor Nanowire Solar Cells (Invited),"Topical Meetings on Optical Nanostructures and Advanced Materials for Photovoltaics (PV), Canberra, Australia, December 2-5 (2014).

50.(1545) D. Uchida, M. Ikebe, J. Motohisa, and E. Sano: "A 12-bit, 5.5-μWsingle-slope ADC using intermittent working TDC with multi-phase clock signals,"IEEE International Conference on Electronics, Circuits, and Systems, Marseille, France, Dec. 7-10(2014).

51.(1546) T. Fukui, E. Nakai, F. Ishizaka, and K. Tomioka:"Vertically aligned semiconductor nanowires and their applications (Invited), " 42nd Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-42), Utah, USA, January 18-22 (2015).

52.(1547) M. Yoshioka, T. M. Dieb, and S. Hara: "Automatic Information Extraction of Experiments from Nanocrystal Devices Development Papers,"NanoinformaticsWorkshop 2015 (Nanoinformatics 2015), Arlington, Virginia, USA, January 26-28 (2015).

53.(1548) Katsuhiro Tomioka, and Takashi Fukui: "III-V nanowire channel and III-V/Si heterojunction for low-power switches (Invited), "IEEE EUROSOI-ULIS 2015, Bologna,Italy, January 26-28 (2015).

54.(1549) K. Tomioka, E. Nakai, F. Ishizaka, and T. Fukui:" III-V semiconductor heterostructure nanowires and their photonic applications (Invited),"WE Heraeus Seminar on III-V Nanowire Photonics, Bad Honnef , Germany, March 22-25 (2015).

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